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http://dx.doi.org/10.1016/j.cap.2018.07.010

Preparation and characterization of Mn doped copper nitride films with high photocurrent response  

Yu, Aiai (Key Laboratory for Organic Electronics & Information Displays (KLOEID), Synergetic Innovation Center for Organic Electronics and Information Displays (SICOEID), Institute of Advanced Materials (IAM), School of Materials Science and Engineering (SMSE), Nanjing University of Posts and Telecommunications (NUPT))
Hu, Ruiyuan (Key Laboratory for Organic Electronics & Information Displays (KLOEID), Synergetic Innovation Center for Organic Electronics and Information Displays (SICOEID), Institute of Advanced Materials (IAM), School of Materials Science and Engineering (SMSE), Nanjing University of Posts and Telecommunications (NUPT))
Liu, Wei (Key Laboratory for Organic Electronics & Information Displays (KLOEID), Synergetic Innovation Center for Organic Electronics and Information Displays (SICOEID), Institute of Advanced Materials (IAM), School of Materials Science and Engineering (SMSE), Nanjing University of Posts and Telecommunications (NUPT))
Zhang, Rui (Key Laboratory for Organic Electronics & Information Displays (KLOEID), Synergetic Innovation Center for Organic Electronics and Information Displays (SICOEID), Institute of Advanced Materials (IAM), School of Materials Science and Engineering (SMSE), Nanjing University of Posts and Telecommunications (NUPT))
Zhang, Jian (Key Laboratory for Organic Electronics & Information Displays (KLOEID), Synergetic Innovation Center for Organic Electronics and Information Displays (SICOEID), Institute of Advanced Materials (IAM), School of Materials Science and Engineering (SMSE), Nanjing University of Posts and Telecommunications (NUPT))
Pu, Yong (School of Science, Nanjing University of Posts and Telecommunications (NUPT))
Chu, Liang (School of Science, Nanjing University of Posts and Telecommunications (NUPT))
Yang, Jianping (School of Science, Nanjing University of Posts and Telecommunications (NUPT))
Li, Xing'ao (Key Laboratory for Organic Electronics & Information Displays (KLOEID), Synergetic Innovation Center for Organic Electronics and Information Displays (SICOEID), Institute of Advanced Materials (IAM), School of Materials Science and Engineering (SMSE), Nanjing University of Posts and Telecommunications (NUPT))
Publication Information
Current Applied Physics / v.18, no.11, 2018 , pp. 1306-1312 More about this Journal
Abstract
The Mn-doped copper nitride ($Cu_3N$) films with Mn concentration of 2.0 at. % have high crystallinity and uniform surface morphology. We found that the as-synthesized Mn-doped $Cu_3N$ films show suitable optical absorption in the visible region and the band gap is ~1.48 eV. A simple photodetector based on Mn doped $Cu_3N$ films was firstly fabricated via magnetron sputtering method. The fabricated device with doping of Mn demonstrated high photocurrent response and fast response shorter than 0.1 s both for rise and decay time superior to the pure $Cu_3N$. Furthermore, the energy levels of Mn-doped Cu3N matched well with ITO and Ag electrode. The excellent photoelectric properties reflect a good balance between sensitivities and response rate. Our investigation reveals the excellent potential of Mn-doped $Cu_3N$ films for application of photodetectors.
Keywords
Photocurrent response; Mn doped $Cu_3N$; Magnetron sputtering; Optical band gap;
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