• Journal of Sensor Science and Technology
• /
• v.8 no.2
• /
• pp.163-170
• /
• 1999

A programmable A/D converter for an embedded fiber-optic combustion pressure sensor has been designed with 8 N and P channel MOSFETs, respectively. A local field enhancement for reducing programming voltage during writing as well as erasing an EEPROM device is introduced. In order to observe linear programmability of the EEPROM device during programming mode, a cell is developed with a $1.2\;{\mu}m$ double poly CMOS fabrication process in MOSIS. It is observed that the high resolution, of say 10mVolt, is valid in the range 1.25volts to 2volts. The experimental result is used for simulating the programmable 8 bit A/D converter with Hspice. The A/D converter is demonstrated to consume low power, $37\;{\mu}W$ by utilizing a programming operation. In addition, the converter is attained at the conversion frequency of 333 MHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.37 no.1
• /
• pp.101-105
• /
• 2024

4H-SiC power metal-oxide-semiconductor field effect transistors (MOSFETs) have been developed to achieve lower specific-on-resistance (R_on,sp), and the gate oxides have been thermally grown. The poor channel mobility resulting from the high interface trap density (D_it) at the SiO₂/4H-SiC interface significantly affects the higher switching loss of the power device. Therefore, the development of novel fabrication processes to enhance the quality of the SiO₂/4H-SiC interface is required. In this paper, NO post-oxidation annealing (POA) by using the conditions of N₂ diluted NO at a high temperature (1,300℃) is proposed to reduce the high interface trap density resulting from thermal oxidation. The NO POA is carried out in various NO ambient (0, 10, 50, and 100% NO mixed with 100, 90, 50, and 0% of high purity N₂ gas to achieve the optimized condition while maintaining a high temperature (1,300℃). To confirm the optimized condition of the NO POA, measuring capacitance-voltage (C-V) and current-voltage (I-V), and time-of-flight secondary-ion mass spectrometry (ToF-SIMS) are employed. It is confirmed that the POA condition of 50% NO at 1,300℃ facilitates the equilibrium state of both the oxidation and nitridation at the SiO₂/4H-SiC interface, thereby reducing the D_it.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.32 no.3
• /
• pp.201-206
• /
• 2019

This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.