• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.53-58
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• 2022

One of the most promising emerging technologies for the next generation of nonvolatile memory devices based on resistive switching (RS) is the resistive random-access memory mechanism. To date, RS effects have been found in many transition metal oxides. However, no clear evidence has been reported that ZnO-based resistive transition mechanisms could be associated with strong correlation effects. Here, we investigated N, F-co-doped ZnO (NFZO), which shows bipolar RS. Conducting micro spectroscopic studies on exposed surfaces helps tracking the behavioral change in systematic electronic structural changes during low and high resistance condition of the material. The significant difference in electronic conductivity was observed to attribute to the field-induced oxygen vacancy that causes the metal-insulator Mott transition on the surface. In this study, we showed the strong correlation effects that can be explored and incorporated in the field of multifunctional oxide electrons devices.

• Journal of the Korean Chemical Society
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• v.44 no.6
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• pp.518-525
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• 2000

The open-chain hexadentate N$_4$, O$_2$ ligands 1,13-bis(2-hydroxybenzyl)-2,5,9,12-tetraazatridecane-tetrahydrochloride (BSATD${\cdot}$4HCl) and 1,14-bis (2-hydroxybenzyl)-2,6,9,12-tetraazatetradecane-tetrahydrochloride (BSATED${\cdot}$ 4HCl) have been synthesized as their tetrahydrochloride salt and characterized by EA, IR, NMR and Mass. Their proton dissociation constants(log$K^{n}_{H}$) and stability constants(log$K_{ML}$) for Cu(II), Ni(II), Co(II), and Zn(II) ions were determined in aqueous solution by potentiometry and compared with those of analogous N$_4$, O$_2$ ligands contain ethylenic spacers or propylenic spacers, which make six-membered chelate rings between the aliphatic nitrogen atoms. Synthesis and characterization of [Cu(BSATD)]ClO$_4$ and [Cu(BSATED)](ClO$_4$)$_2$ complexes are described.

• Journal of Korean Society of Environmental Engineers
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• v.36 no.12
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• pp.851-857
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• 2014

Treatability of heavy metals in marine sediments contaminated with mainly organic matter was investigated on the basis of washing technology using oxidizers and surfactants. Sediment samples were collected at N area which expected for remediation project of contaminated marine sediment. For additives, hydrogen peroxide ($H_2O_2$) and Tween-80 were used at oxidizer and nonionic surfactant, respectively. In experiments, sediments was mixed with sea water at the ratio of 1 : 3 than $H_2O_2$ (1 M, 3 M, 4 M, 5 M) and Tween-80 (0.05%) were added. Samples were gathered at following reaction time (10, 20, 30, 40, 50, 60, 70, 80 min and 24 h). Total Organic Carbon (TOC) was 55.2% at the conditions of 5 M $H_2O_2+0.05%$ Tween-80 24 h. Hence total heavy metals were Cu 29.5%, Zn 42.3%, Cd 73.0% and bioavailable heavy metals were Cu 60.0%, Zn 77.7%, Cd 90.2% at the conditions of 5 M $H_2O_2+0.05%$ Tween-80 10 min. The correlations for between bioavailable metals (Cu, Zn, Cd) and TOC were significant (Cu, Zn, Cd; $r^2=0.94$, 0.85, 0.69, respectively).

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.280.2-280.2
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• 2016

The graphene, a single atomic sheet of graphite, has attracted tremendous interest owing to its novel properties including high intrinsic mobility, optical transparency and flexibility. However, for more diverse application of graphene devices, it is essential to tune its transport behavior by shifting Dirac Point (DP) of graphene. So, in the following context, we suggest a method to tune structural and electronic properties of graphene using atomic layer deposition. By atomic layer deposition of zinc oxide (ZnO) on graphene using 4-mercaptophenol as linker, we can fabricate n-doped graphene. Through ${\pi}-{\pi}$ stacking between chemically inert graphene and 4-mercaptophenol, conformal deposition of ZnO on graphene was enabled. The electron mobility of graphene TFT increased more than 3 times without considerably decreasing the hole mobility, compared to the pristine graphene. Also, it has high air stability. This ZnO doping method by atomic layer deposition can be applicable to large scale array of CVD graphene TFT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.40-43
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• 1991

The low-voltage ZnO varistor fabricated by a new method with three-composition seed grain are studied. The knee voltage about 5V$\_$0.5[A/$\textrm{cm}^2$]/ for sample #7 among the various samples are observed, and activation energy in the obmic region and trap level in the double sohottky region for each samples are 0.359∼0.450eV and 0.553∼0.620eV, respectively. It is concluded that the change of knee voltage may be caused by trap level in double sohottky region rather than activation energy in the ohmic region.

• Transactions on Electrical and Electronic Materials
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• v.15 no.3
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• pp.136-138
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• 2014

In this study, cholesterol sensors consisting of a mixture of cholesterol oxidase (ChOx) and zinc oxide (ZnO) nanoparticles (NPs) are constructed on plastic substrates and their sensing characteristics are examined in air. The current of the ChOx-ZnO NP film decreases in magnitude as cholesterol molecules are adsorbed on the film, due to the resulting increase in the number of electrons generated by the reaction between the cholesterol and the ChOx. The cholesterol sensor shows a high sensitivity of $1.08{\mu}A/mM$ and a wide detection range from 10 nM to 1 mM.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1906-1908
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• 2002

In general, ZnO lighting arrester are known to exhibit an increases in resistive current with time, the rate of increase being exacerbated with increasing applied voltage. In addition, since the resistive leakage current caused by deterioration of ZnO lighting arrester mainly caused an increase of the third harmonic component, thereby it is possible the arrester degradation diagnosis by measuring the third harmonic component in the total leakage current. So, in this paper, we presents a leakage current measuring and analysis system of 18[kV] ZnO lighting arrester.

• Bulletin of the Korean Chemical Society
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• v.35 no.4
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• pp.1050-1056
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• 2014

Dye sensitized solar cells were fabricated using natural dyes extracted from beetroot, rose and strawberry. The ZnO nanorod working electrode has been prepared by simple hydrothermal method. The crystallinity and morphology of the prepared electrode has been studied using X-ray diffraction and scanning electron microscopy techniques. The effect of natural dye extract temperature, pH of the dye and the solvent used for dye preparation on the solar cell characteristics have been studied. The efficiency of strawberry extract sensitized ZnO nanorod solar cells are found to be better than the other solar cells sensitized using beetroot and rose extracts.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.2
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• pp.62-67
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• 2013

The influence of internal stress and joint strength(shear, tensile) according to the deposition conditions was investigated by the Polyimide substrate and ZnO thin film. Deposition thickness and temperature affect the internal stress and the internal stress was minimum at the 60nm and $200^{\circ}C$ of the deposition conditions. Tensile strength is large at the deposition condition that shear strength is large and the shear strength was about 50% of the tensile strength. The shear strength and tensile strength were large at deposition condition that internal stress was small. Crack occurred near the joint interface of Polyimide substrate and progressed along the interface until the final fracture.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.178-178
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• 2010

We have deposited aluminum-doped ZnO thin films on borosilicate glass by atomic layer deposition. Diethylzinc (DEZ) and dimethylaluminum isopropoxide (DMAIP) were used as the metal precursor and the Al-dopant, respectively. Water was used as an oxygen source. DMAIP was successfully used as an aluminum precursor for chemical vapor deposition and ALD. All deposited films showed n-type conduction. The resistivity decreased to a minimum and then increased with increasing the aluminum content. The carrier concentration increased and the carrier mobility decreased with increasing the DMAIP to DEZ pulse ratio. The average optical transmittance was nearly 80 % in the visible part of the spectrum. The absorption edge moved to the shorter wavelength region with increasing the DMAIP to DEZ pulse ratio. Our results indicate that DMAIP is suitable for Al doping of ZnO films.