• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.338.2-338.2
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• 2016

Al doped ZnO (AZO) thin films were deposited on Si substrates with rod-shaped-surface by pulsed laser deposition method (PLD). Si-rods were prepared through chemical etching. To analyze the influence on the formation of the rod structure, samples with various chemical etching conditions such as AgNO3/HF ratio, etching time, and solution temperature were prepared. The morphology of Si-rod structures were examined by FE-SEM. Fig. 1 shows a typical structure of n-AZO/p-Si-rod juncions. The fabricated n-AZO/p-Si-rod devices exhibited p-n diode current-voltage characteristics. We compared the I-V characteristics of n-AZO/p-Si-rod devices with the samples without Si-rod structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.398-398
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• 2012

GaN 기반의 InGaN/GaN 다중양자우물(MQW) 구조의 발광다이오드는 다양한 파장대의 가시광을 방출하는 소자로 교통 신호등, 디스플레이, LCD backlight, 일반 조명까지 넓게 응용되고 있다. 그러나, 이러한 응용을 위해서는 전류 주입 효율, 내부양자효율, 광추출 효율을 개선하는 연구를 통한 발광 다이오드의 광효율을 높이는 연구가 필수적이다. 최근 많은 연구 개발에 의해 내부양자효율은 크게 향상 되었지만, 광추출 효율은 GaN (n=2.4)와 공기 (n=1)의 굴절률 차이에 의해 아직까지 낮은 실정이다. 광추출 효율을 개선하기 위해 반사전극, 전방향 반사전극, 표면 거칠기, Chip 성형 등의 기술이 제안되고 있다. 본 연구는 LED의 광추출 효율을 높이기 위해 다양한 모양의 Hydrothermal 법에 의해 성장된 ZnO 나노 구조 및 나노스피어 리소그라피를 통한 폴리스티렌 나노 구체의 주기적인 배열에 따른 특성을 연구하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.7
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• pp.7-14
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• 2009

In this paper, the effects of annealing conditions on the structural ((002) intensity, FWHM, d-spacing, grain size, (002) peak position), optical (UV peak, UV peak position) and electrical properties (carrier concentrations, resistivity, mobility) of ZnO films were investigated. ZnO films were deposited onto SiO$_2$/si substrates by RF magnetron sputtering from a ZnO target. The substrate was not heated during deposition. ZnO films were annealed in temperature ranges of $500\sim650^{\circ}C$ in the O$_2$ flow for 5$\sim$20 min. The film average thicknesses were in the range of 291 nm. The surface morphologies and structures of the samples were characterize by SEM and XRD, respectively. The optical properties were evaluated by photoluminescence (PL) measurement at room temperature (RT) using a He-Cd 325 nm laser. As the annealing temperature and time vary, the following relations were also observed: (1) proportional relationships among UV intensity (002) intensity, and grain size exist, (2) UV intensity is inversely proportional to FWHM, (3) there is no special relationship between UV intensity and electron carrier concentrations, (4) d-spacing is inversely proportional to (002) peak position, (5) UV peak position in the range of 3.20$\sim$3.24 eV means that ZnO films have a n-type conductivity which was consistent with that obtained from the electrical property, (6) the optimal conditions for the best optical and structural characteristics were found to be oxygen fraction, (O$_2$/(O$_2$+Ar)) of 0.2, RF power of 240W, substrate temperature of RT, annealing condition of 600$^{\circ}C$ for 20 min, and sputtering pressure of 20 mTorr.

• Journal of the Korean Chemical Society
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• v.44 no.5
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• pp.403-409
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• 2000

The formation and dissociation rates of $Zn^{2+}$ Complexes with l,4,7,10-tetraaza-13,16-diox-acyclooctadecane-N,N',N",N'"-tetraacetic acid (1), 1,4,7,10-tetraaza-13,16- dioxacyclooctadecane-N,N',N",N'"-tetramethylacetic acid (2), and 1,4,7,10-tetraaza-13,16- dioxacyclooctadecane-N,N',N",N'"-tetrapropionic acid(3) have been measured by stopped-flow and conventional spectrophotometry. Observations were made at 25.0$\pm$0.1 $^{\circ}C$ and at an ionic strength of 0.10 M NaClO$_4$. The formation reactions of $Zn^{2+}$ ion with 1 and 2 took place by the rapid formation of an intermediate complex (ZnH$_3L^+$) in which the $Zn^{2+}$ ion is incompletely coor-dinated. This might then lead to be a final product in the rate-determining step.ln the pH range 4.76-5.76, the diprotonated (H2L2-) form is the kinetically active species despite of its low concentration. The stability con-stants (log$K_{(ZnH$_3$3$L^+$)}$) and specific water-assisted rate constants (koH) of intermediate complexes have been deter-mined from the kinetic data. The dissociation reactions of $Zn^{2+}$ complexes of 1,2, and 3 were investigated with $Cu^{2+}$ ions as a scavenger in acetate buffer. All complexes exhibit acid-independent and acid-catalyzed con-tributions. The effect of buffer and $Cu^{2+}$ concentration on the dissociation rate has also been investigated. The ligand effect on t dissociation rate of $Zn^{2+}$ complexes is discussed in terms of the side-pendant armsand the chelate ring sizes of the ligands.

• Journal of Environmental Science International
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• v.19 no.7
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• pp.849-860
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• 2010

A new $N_3O_2$ pentadentate ligand, N,N'-Bis(2-hydroxybenzyl)-ethylenetriamine(H-BHET 3HCl) was synthesized. The hydrochloric acid salts of Br-BHET 3HCl, Cl-BHET 3HCl, $CH_3O$-BHET 3HCl and $CH_3$-BHET 3HCl containing Br-, Cl-, H-, $CH_3O-$ and $CH_3-$ groups at the para-site of the phenol group of the H-BHEP were synthesized. The structures of the ligands were confirmed by C. H. N. atomic analysis and $^1H$ NMR, $^{13}C$ NMR, UV-visible and mass spectra. The calculated stepwise protonation constants(${\logK_n}^H$) of the synthesized $N_3O_2$ ligands showed six steps of the proton dissociation. The orders of the overall protonation constants($\log{\beta}_p$) of the ligands were Br-BHET < Cl-BHET < H-BHET < $CH_3O$-BHET < $CH_3$-BHET. The orders agreed well with that of para Hammett substituent constants(${\delta}_p$). The calculated stability constants($\logK_{ML}$) between the ligands and heavy metal ions (Co(II), Ni(II), Cu(II), Zn(II), Cd(II) and Pb(II)) agreed well with the order of the overall proton dissociation constants of the ligands but they showed a reverse order in para Hammestt substituent constants(${\delta}_p$). The order of the stability constants between the heavy metal ions with the synthesized ligands were Co(II) < Ni(II) < Cu(II) > Zn(II) > Cd(II) > Pb(II).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.117-121
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• 1992

Zinc oxide thin films were obtained from zinc acetate-2-water and oxygen by photo-CVD method. (1) The formation of ZnO films sarts from 100[$^{\circ}C$] and the deposition rate increases with increasing substrate temperature. (2) The rate of deposition was also affected by flow rates of O$_2$(reaction gas) and N$_2$(Carrier gas). (3) The deposition rate decreases with increasing O$_2$mole rate. (4) The transmission of the films was independent of oxygen mole rate and it was largely affected substrate temperature. (5) The electric resistivity of th films was largely varied at oxygen mole rate 10[%] and above 20[%], a plateau was encountered. Also, it increases with increasing substrate temperature. As the results, at substrate temperature: 200[$^{\circ}C$]; O$_2$gas mole rate:10[%]; reation time:10[min] pressure: 10$\^$-2/[atm], deposition rate; transmittance; resistivity were 780[A$\^$0/; 94[%]; 7${\times}$10$\^$-2/[$\Omega$$.$cm] respectively.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1523-1525
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• 2003

Due to the rapid development of wireless networking system, researches on the communication devices are mainly focus on microwave frequency devices such as filters, resonators, and phase shifters. Among them, Film bulk acoustic resonator (FBAR) has been paid extensive attentions for their high performance. In this research, ZnO thin films were deposited by RF-magnetron sputtering on Al/$SiO_2$/Si wafer and then crystalline properties and surface morphology were examined. To measure crystalline structure and surface morphology X-ray diffraction (XRD) and Scanning Electron Microscope (SEM) were employed. It was showed that crystalline properties of ZnO thin films were strongly dependant on the deposition conditions. As increasing the deposition temperature and the deposition pressures, the peak intensities of ZnO(002) plane were increased until $300^{\circ}C$, then decreased rapidly. At the sputtering conditions of RF power of 213 W and working pressure of 15 m Torr, ZnO film had excellent c-axis orientation, surface morphology, and adhesion to the substrate. In conclusion we optimized smooth surface with very small grains as well as highly c-axis oriented ZnO film for FBAR applications.

• Journal of Sensor Science and Technology
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• v.29 no.6
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• pp.420-426
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• 2020

A metal oxide semiconductor gas sensor is operated by measuring the changes in resistance that occur on the surface of nanostructures for gas detection. ZnO, which is an n-type metal oxide semiconductor, is widely used as a gas sensor material owing to its high sensitivity. Various ZnO nanostructures in gas sensors have been studied with the aim of improving surface reactions. In the present study, the sol-gel and vapor phase growth techniques were used to fabricate nanostructures to improve the sensitivity, response, and recovery rate for gas sensing. The sol-gel method was used to synthesize SnO₂ nanoparticles, which were used as the seed layer. The nanoparticles size was controlled by regulating the process parameters of the solution, such as the pH of the solution, the type and amount of solvent. As a result, the SnO₂ seed layer suppressed the aggregation of the nanostructures, thereby interrupting gas diffusion. The ZnO nanostructures with a sol-gel processed SnO₂ seed layer had larger specific surface area and high sensitivity. The gas response and recovery rate were 1-7 min faster than the gas sensor without the sol-gel process. The gas response increased 4-24 times compared to that of the gas sensor without the sol-gel method.

• Korean Journal of Medicinal Crop Science
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• v.1 no.2
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• pp.171-177
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• 1993

This experiment was conducted to select and rear the adaptable cultivar which isused for various purpose and to build a year-round cultivation using with characters of aerial part and analysis of chemical components in 28 local cultivar of Artemisia princeps Var. The growth of aerial part, which are stem length, stem diameter, no. of branch, node, leaf size and leaf pubescence, in north local cultivars was more vigorous than those of south local caltivars. Fresh weight of "Myeongcheonssuk " was highest in local caltivars, and in view of local area, local cultivars which was collected from Iri Si and Euiseong Gun was shown the highest fresh weight. Local cultivars as mentioned above had a characters with plenty of leaves, nodes and pubescence of leaf is long. In chemical components of leaves in morth cultivar, content of N, MgO, Zn, Cu, Mn was high, while $P_2O_5,\;K_2O$ in middle local cultivars, Fe in south local cultivars. The more content of carbohydrate in leaves was high, the content of $K_{2}O$ had a increasing tendency. In local cultivars which was collected form Iri Si and Euiseong Gun with the highest fresh weight, content of $N,\;P_{2}O_5,\;K_{2}O$ was high, on the other hand content of MgO, Zn, Ca, Mn, Fe, was low in leaves of Artemisia Princeps Var.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05b
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• pp.75-81
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• 2003

This study evaporates ZnO layer thickness differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant $({\varepsilon}_1{\varepsilon}_2)$ has larger peak values as it’s thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.