• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.480-485
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• 2011

ZnO is an n-type semiconductor with a wide band gap near 3.37 eV. It was known that ZnO films with a resistivity of the order of $10^{-4}\;{\Omega}cm$ is not easy to obtain. 1, 3, and 5wt% Si element were added into ZnO in ordre to improve the electrical and optical characteristics. The Si-doped ZnO (SZO) was grown on a glass substrate by radio frequency (RF) magnetron sputtering at the temperature range from 100 to $500^{\circ}C$. X-ray diffraction (XRD) patterns of SZO film showed preferable crystal orientation of (002) plane. It was confirmed that the lowest resistivity of the SZO films was $2.44{\times}10^{-3}{\Omega}cm$ and SZO films were significantly influenced by the working temperature. The average transmittance of the films was over 80% in the visible ranges.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.243.2-243.2
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• 2015

We report a high-performing nanoscale NiO thin film grown by thermal oxidation of sputtered Ni film. The structural, physical, optical and electrical properties of nanoscale NiO were comprehensively investigated. A quality transparent heterojunction (NiO/ZnO) was formed by large-area applicable sputtering deposition method that has an extremely low saturation current of 0.1 nA. Considerable large rectification ratio of more than 1000 was obtained for transparent heterojunction device. Mott-Schottky analyses were applied to develop the interface of NiO and ZnO by establishing energy diagrams. Nanoscale NiO has the accepter carrier concentration of the order of 1018 cm-3. Nanoscale NiO Schottky junction device properties were comprehensively studied using room temperature impedance spectroscopy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.13-16
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• 1994

In this paper, xPb(Zn$_{1/3}Nb_{2/3}$)$O_3$-yPbTiO$_3$-zPbZrO$_3$-(0.5wt%)MnO$_2$ ceramics were fabricated by the mixed oxide method sintered at $1250^{\circ}C$ for 2[hr] and then the deielectric, electromechanical coupling factor($K_{p}$ and mechanical coupling factor(Qm) properties were investigated. In 0.1PZN-0.45PT-0.45PZsample, dielectric properties and electromechanical coupling factor were 829 and 29%. In the case of 0.5PZN-0.45PT-0.50PZ sample, that was 101 according to mechanical quality facotr. molphotropic phase boundary(MPB) certained area which $PbTiO_3$addition quatity 40∼50[㏖%].

• Journal of Magnetics
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• v.10 no.3
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• pp.95-98
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• 2005

We report hole-induced ferromagnetism in diluted magnetic semiconductor $Zn_{0.99}Mn_{0.01}$ films grown on $SiO_2/Si$ substrates by reactive sputtering. The p-type conduction with hole concentration over $10^{18}\;cm^{-3}$ is achieved by P doping followed by rapid thermal annealing at $800^{\circ}C$ in a $N_2$ atmosphere. The p-type $Zn_{0.99}Mn_{0.01}O:P$ is carefully examined by x-ray diffraction and transmission electron microscopy. The magnetic measurements for $p-Zn_{0.99}Mn_{0.01}O:P$ clearly reveal ferromagnetic characteristics with a Curie temperature above room temperature, whereas those for $n-Zn_{0.99}Mn_{0.01}O:P$ show paramagnetic behavior. The anomalous Hall effect at room temperature is observed for the p-type film. This result strongly supports hole-induced room temperature ferromagnetism in $p-Zn_{0.99}Mn_{0.01}O:P$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.604-610
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• 2003

The effects of sintering additives such as B $i_2$ $O_3$ and $V_2$ $O_{5}$ on the microwave dielectric and sintering properties of (Z $n_1$$_{-xM}$ $g_{x}$)Ti $O_3$ system were investigated. Highly dense samples were obtained for (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ at the sintering temperature range of 870~90$0^{\circ}C$ with B $i_2$ $O_3$ and $V_2$ $O_{5}$ additions of 〈1 wt.%, respectively. The microwave dielectric properties of (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ with 0.45 wt.%B $i_2$ $O_3$ and 0.55 wt.% $V_2$ $O_{5}$ sintered at 90$0^{\circ}C$ were as follows : Q$\times$ $f_{o}$ = 50,800 GHz, $\varepsilon$$_{r}$ = 22, and $\tau$$_{f}$ = -53 ppm/$^{\circ}C$. In order to improve temperature coefficient of resonant frequency, Ti $O_2$ was added to the above system. The optimum amount of Ti $O_2$ was 15 moi.% when sintered at 87$0^{\circ}C$, at which we could obtain following results: Q$\times$ $f_{o}$ = 32,800 GHz, $\varepsilon$$_{r}$ = 26, and$\tau$$_{f}$ = 0 ppm/$^{\circ}C$.EX>.EX>.EX>.EX>.EX>.EX>.EX>.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.392-392
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• 2011

현재의 태양전지에 사용되는 wafer는 원가저감을 위해 점점 얇아지고 있는 추세이다. 하지만 wafer가 얇아질수록 장파장 영역의 광자는 충분히 활용할 수 없게 된다. 대부분의 광자는 50um 지점에 도달하였을 때 그 역할을 다하고 소멸하게 되며, 특히 800nm 이상의 장파장에 대한 generation rate는 wafer 두께에 따라 급격한 차이를 보이게 된다. 따라서 장파장 영역의 광자를 효율적으로 사용할 뿐만 아니라 원가 저감을 위해 더욱 얇아지고 있는 추세의 wafer의 장파장 이용을 보상하기 위해서 TCO를 이용한 back-reflector의 역할은 가장 좋은 해결책이 될 것이다. 본 연구에서는 Macleod를 이용하여 ZnO, Al-doped ZnO, TiN, TiO2와 같은 다양한 TCO 물질에 대한 다양한 simulation을 실시 하여 reflectance 특성을 알아보았다. 상기 simulation결과로써 Al-doped ZnO가 가장 reflectance 특성이 좋게 나타났었으며 이를 이종접합 태양전지에 적용하여 광학적 및 전기적 특성 변화에 대해서 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.191-191
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• 2010

차세대 디스플레이를 위한 소자로 활용 가능한 Oxide Semiconductor TFT를 bottom gate 타입의 TFT 소자를 제작하였다. 투명 박막 트랜지스터 제작과 관련해서 ITO가 증착된 glass 기판을 gate 전극으로 사용하였고, 게이트 dielectric으로 $SiO_2/Si_3N_4$를 PECVD 방법을 사용해 증착하였으며, 채널 영역으로 ZnO를 RF magnetron sputtering을 이용하여 RF power 및 공정 압력에 따른 구조적, 광학적, 전기적 특성을 조사하였다. ZnO 박막의 공정 변수로 RF파워는 25W, 50W, 75W, 100W로 변화시키고, 증착 압력은 20m, 100m, 200m 300mTorr로 변화시켰다. Source/Drain 사이에 채널 형성 및 게이트 dielectric에서 누설전류가 TFT 특성에 미치는 영향을 연구하였다. ZnO 박막은 증착 파워 및 공정 압력에 따라 박막의 결정성이 현저하게 변화하는 것을 알 수 있었으며, 그러한 박막의 미세구조 가 TFT의 전기적인 특성에 크게 영향을 미치는 것으로 판단된다

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1162-1166
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• 2001

NiZn-ferrite was synthesized from waste catalysts, which were produced from styrene monomer process and buried underground as an industrial wastes, and its magnetic properties were investigated. Nickel oxide and zinc oxide powders were mixed with finely ground waste catalysts, and spinel type ferrite was obtained by calcination at 900$\^{C}$ and sintering at 1230$\^{C}$ for 5 hours. The intial permeability was measured and reflection loss was calculated from S-parameters for the composition of Ni$\_$x/Zn$\_$1-x/Fe$_2$O$_4$(x=0.36, 0.50, 0.66). NiZn-ferrite synthesized from waste iron oxide catalyst showed a feasibility for the use as electromagnetic wave absorber in X-band.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.16-16
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• 2010

GaN-based light-emitting diodes (LEDs) are attracting great interest as candidates for next-generation solid-state lighting, because of their long lifetime, small size, high efficacy, and low energy consumption. However, for general illumination applications, the external quantum efficiency of LEDs, determined by the internal quantum efficiency (IQE) and the light extraction efficiency, must be further increased. The IQE is determined by crystal quality and epitaxial layer structure and high value of IQE more than 70% for blue LEDs have been already reported. However, there is much room for improvement of light extraction efficiency because most of the generated photons from active layer remain inside LEDs by total internal reflection at the interface of semiconductor with air due to the high refractive index difference between LEDs epilayer (for GaN, n=2.5) and air (n=1). The light confining in LEDs will be reabsorbed by the metal electrode or active layer, reducing the efficacy of LEDs. Here, we present the first demonstration of enhanced light extraction by forming a MgO nano-pyramids structure on the surface of vertical-LEDs. The MgO nano-pyramids structure was successfully fabricated at room temperature using conventional electron-beam evaporation without any additional process. The nano-sized pyramids of MgO are formed on the surface during growth due to anisotropic characteristics between (111) and (200) plane of MgO. The ZnO layer with quarter-wavelength in thickness is inserted between GaN and MgO layers to increase the critical angle for total internal reflection, because the refractive index of ZnO (n=1.94) could be matched between GaN (n=2.5) and MgO (n=1.73). The MgO nano-pyramids structure and ZnO refractive-index modulation layer enhanced the light extraction efficiency ofV-LEDs with by 49%, comparing with the V-LEDs with a flat n-GaN surface. The angular-dependent emission intensity shows the enhanced light extraction through the side walls of V-LEDs as well as through the top surface of the n-GaN, because of the increase in critical angle for total internal reflection as well as light scattering at the MgO nano-pyramids surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.984-989
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• 2012

We have investigated the structural, electrical and optical properties of Ga-doped ZnO (GZO) thin films prepared by RF magnetron sputtering with laboratory-made ZnO targets containing 1, 3, 5, 7 wt% of $Ga_2O_3$ powder as a doping source. The GZO thin films show the typical crystallographic orientation with c-axis regardless of $Ga_2O_3$ content in the targets. The $3,000{\AA}$ thick GZO thin films with the lowest resistivity of $7{\times}10^{-4}{\Omega}{\cdot}cm$ are obtained by using the GZO ($Ga_2O_3$= 5 wt%) target. Optical transmittance of all films shows higher than 80% at the visible region. The optical energy band gap for GZO films increases as the carrier concentration ($n_e$) in the film increases.