• ETRI Journal
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• v.35 no.3
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• pp.378-385
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• 2013

An S-band multifunction chip with a simple interface for an active phased array base station antenna for next-generation mobile communications is designed and fabricated using commercial 0.5-${\mu}m$ GaAs pHEMT technology. To reduce the cost of the module assembly and to reduce the number of chip interfaces for a compact transmit/receive module, a digital serial-to-parallel converter and an active bias circuit are integrated into the designed chip. The chip can be controlled and driven using only five interfaces. With 6-bit phase shifting and 6-bit attenuation, it provides a wideband performance employing a shunt-feedback technique for amplifiers. With a compact size of 16 $mm^2$ ($4mm{\times}4mm$), the proposed chip exhibits a gain of 26 dB, a P1dB of 12 dBm, and a noise figure of 3.5 dB over a wide frequency range of 1.8 GHz to 3.2 GHz.

• ETRI Journal
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• v.46 no.2
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• pp.323-332
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• 2024

Receiver and transmitter monolithic microwave integrated circuit (MMIC) multifunction chips (MFCs) for active phased-array antennas for Ka-band satellite communication (SATCOM) terminals have been designed and fabricated using a 0.15-㎛ GaAs pseudomorphic high-electron mobility transistor (pHEMT) process. The MFCs consist of four-channel radio frequency (RF) paths and a 4:1 combiner. Each channel provides several functions such as signal amplification, 6-bit phase shifting, and 5-bit attenuation with a 44-bit serial-to-parallel converter (SPC). RF pads are implemented on the bottom side of the chip to remove the parasitic inductance induced by wire bonding. The area of the fabricated chips is 5.2 mm × 4.2 mm. The receiver chip exhibits a gain of 18 dB and a noise figure of 2.0 dB over a frequency range from 17 GHz to 21 GHz with a low direct current (DC) power of 0.36 W. The transmitter chip provides a gain of 20 dB and a 1-dB gain compression point (P1dB) of 18.4 dBm over a frequency range from 28 GHz to 31 GHz with a low DC power of 0.85 W. The P1dB can be increased to 20.6 dBm at a higher bias of +4.5 V.

• Proceedings of the KIEE Conference
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• 1999.11c
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• pp.693-696
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• 1999

This paper describes a new voltage recorder for the voltage management of a power distribution line by using a new voltage measurement technique. The RMS(Root Mean Square) voltage measurement for the power line under the assumption of a sinusoidal input voltage is taken by the full-wave rectifier, half-adder utilizing operational amplifier(OP) circuit. A/D converter utilizing a dual slope converter converts an analog voltage signal into a serial pulse. The pulse is counted with a single chip micro-controller, converted with the RMS voltage, and saved into a flash memory. In the last, a new voltage recorder with compact size and multifunction is developed. Also, Voltage Management System that can analyze the stored data via RS-232C cable is developed based on Windows 95 and Visual C++.

• Proceedings of the KSRS Conference
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• 2002.10a
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• pp.465-470
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• 2002

A novel phased array antenna system for space-borne polarimetric SAR is proposed and completed in this paper.The antenna system assures polarimetric and multi-mode capability of SAR. It has broadband, high polarization isolation and high port to port isolation. The antenna system is composed of broadband polarimetric microstrip antenna, T/R modules and multifunction beam controller nit. The polarimetric microstrip antenna has more than 100MHz bandwidth at L-band with -30dB polarization isolation and high port to port isolation. The microstrip element and T/R module's structure and characteristics, the subarray's performances measuring results are presented in detail in this paper. A design scheme on beam controller of the phased array antenna is also proposed and completed, which is based on Digital Signal Processing (DSP) chip -TMS320F206. This beam controller unit has small size and high reliability compared with general beam controller. In addition, the multifunction beam controller unit can acquire and then send the T/R module's working states to detection system in real time.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.5
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• pp.325-335
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• 2018

We herein present a study on the active phased array antenna for receiving satellite broadcasting that can electrically align its polarization to that of target transmitters in its moving condition or in the Skew angle arrangement of the broadcasting satellite receiver. Hence, we have developed an active phased array structure composed of the self-developed Vivaldi antenna and multifunction core (MFC) chip, receiving RF front end module, and control units. In particular, the new Vivaldi antenna designed in the Ku-band of 10.7 - 14.5 GHz to receive one desired polarization mode such as the horizontal or vertical by means of an MFC chip and other control units that can control the amplitude and phase of each antenna element. The test results verified that cross-polarization property is 20 dB or higher and the primary beam can be scanned clearly at approximately ${\pm}60^{\circ}$.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.12
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• pp.6-13
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• 2009

For X-band phased array systems, a power amplifier, a 6-bit phase shifter, a 6-bit digital attenuator, and a SPDT transmit/receive (T/R) switch are fabricated and measured. All circuits are demonstrated by using CMOS 0.18 um technology. The power amplifier has 2-stage differential and cascade structures. It provides 1-dB gain-compressed output power ($P_{1dB}$) of 20 dBm and power-added-efficiency (PAE) of 19 % at 8-11 GHz frequencies. The 6-bit phase shifter utilizes embedded switched filter structure which consists of nMOS transistors as a switch and meandered microstrip lines for desired inductances. It has $360^{\circ}$ phase-control range and $5.6^{\circ}$ phase resolution. At 8-11 GHz frequencies, it has RMS phase and amplitude errors are below $5^{\circ}$ and 0.8 dB, and insertion loss of $-15.7\;{\pm}\;1,1\;dB$. The 6-bit digital attenuator is comprised of embedded switched Pi-and T-type attenuators resistive networks and nMOS switches and employes compensation circuits for low insertion phase variation. It has max. attenuation of 31.5 dB and 0.5 dB amplitude resolution. Its RMS amplitude and phase errors are below 0.4 dB and $2^{\circ}$ at 8-11 GHz frequencies, and insertion loss is $-10.5\;{\pm}\;0.8\;dB$. The SPDT T/R switch has series and shunt transistor pairs on transmit and receive path, and only one inductance to reduce chip area. It shows insertion loss of -1.5 dB, return loss below -15 dB, and isolation about -30 dB. The fabricated chip areas are $1.28\;mm^2$, $1.9mm^2$, $0.34\;mm^2$, $0.02mm^2$, respectively.