• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.150.2-150.2
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• 2015

In this study, we analyzed the electric and optical characteristics by using various deposition rate ($0.5{\AA}$, $1.0{\AA}$ and $1.5{\AA}/s$) in order to enhance the performance in organic light-emitting devices (OLED). The organic multi-layer structures were deposited with NPB ($500{\AA}$ as hole transport layer), Alq3 ($600{\AA}$ as electron transport layer and emission layer) and LiF ($8{\AA}$ as electron injection layer) via SUNIC PLUS200 on Glass/ITO substrates. In this experiment, we examined the relationship between porous state of organic deposition and mobility of the organic materials. Among the three deposition rates, $0.5{\AA}/s$ achieved the highest performance of (10,786cd/m2, 4.387cd/A) comparing with that of $1{\AA}/s$ (7,779cd/m2, 3.281cd/A) and $1.5{\AA}/s$ (5,167cd/m2, 2.693cd/A). We confirmed that low deposition rate helps to arrange organic materials densely and to move easily another atomic location using inter-chain transporting by orbital overlap.

• Korean Journal of Materials Research
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• v.18 no.4
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• pp.199-203
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• 2008

High-efficiency phosphorescent organic light emitting diodes using TCTA-TAZ as a double host and $Ir(ppy)_3$ as a dopant were fabricated and their electro-luminescence properties were evaluated. The fabricated devices have the multi-layered organic structure of 2-TNATA/NPB/(TCTA-TAZ) : $Ir(ppy)_3$/BCP/SFC137 between an anode of ITO and a cathode of LiF/AL. In the device structure, 2-TNATA[4,4',4"-tris(2-naphthylphenyl-phenylamino)-triphenylamine] and NPB[N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] were used as a hole injection layer and a hole transport layer, respectively. BCP [2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline] was introduced as a hole blocking layer and an electron transport layer, respectively. TCTA [4,4',4"-tris(N-carbazolyl)-triphenylamine] and TAZ [3-phenyl-4-(1-naphthyl)-5-phenyl-1,2,4-triazole] were sequentially deposited, forming a double host doped with $Ir(ppy)_3$ in the [TCTA-TAZ] : $Ir(ppy)_3$ region. Among devices with different thickness combinations of TCTA ($50\;{\AA}-200\;{\AA}$) and TAZ ($100\;{\AA}-250\;{\AA}$) within the confines of the total host thickness of $300\;{\AA}$ and an $Ir(ppy)_3$-doping concentration of 7%, the best electroluminescence characteristics were obtained in a device with $100\;{\AA}$-think TCTA and $200\;{\AA}$-thick TAZ. The $Ir(ppy)_3$ concentration in the doping range of 4%-10% in devices with an emissive layer of [TCTA ($100\;{\AA}$)-TAZ ($200\;{\AA}$)] : $Ir(ppy)_3$ gave rise to little difference in the luminance and current efficiency.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.285-295
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• 1999

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of their capability of multi-color emission, and low operation voltage. An approach to realize such device characteristics is to use active layers of lanthanide complexes with their inherent extremely sharp emission bands in stead of commonly known organic dyes. In general, organic molecular compounds show emission due to their $\pi$-$\pi*$ transitions resulting in luminescence bandwidths of about 80 to 100nm. Spin statistic estimations lead to an internal quantum efficiency of dye-based EL devices limited to 25%. On the contrary, the fluorescence of lanthanide complexes is based on an intramolecular energy transfer from the triplet of the organic ligand to the 4f energy states of the ion. Therefore, theoretical internal quantum efficiency is principally not limited. In this study, Powders of TPD, $Eu(TTA)_3(phen) and AlQ_3$ in a boat were subsequently heated to their sublimation temperatures to obtain the growth rates of 0.2~0.3nm/s. Organic electrolumnescent devices(OELD) with a structure of $glass substrate/ITO/Eu(TTA)_3(phen)/AI, glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AI and glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AIQ_3AI$ structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, $Eu(TTA)_3(phen)$ as an emitting material, and Tris(8-hydroxyquinoline)Aluminum$(AlQ_3)$ as an electron transporting layer. Electroluminescent(EL) and current density-voltage(J-V) characteristics of these OELDs with various thickness of $Eu(TTA)_3(phen)$ layer were investigated. The triple-layer structure devices show the red EL spectrum at the wavelength of 613nm, which is almost the same as the photoluminescent(PL) spectrum of $Eu(TTA)_3(phen)$.It was found from the J-V characteristics of these devices that the current density is not dependent on the applied field, but on the electric field.

• Journal of Adhesion and Interface
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• v.23 no.2
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• pp.17-24
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• 2022

Colloidal quantum dots (QDs) have gained attention for applications in quantum dot light emitting diodes (QLEDs) due to their high photoluminescence quantum yield, narrow emission spectra, and tunable bandgap. Nevertheless, non-radiative recombination induced by electron and hole imbalance deteriorates the device efficiency and stability. To overcome the problem, researchers have been trying to enhance hole transport properties of hole transporting layers (HTL) and/or slow down the electron injection in electron transport layer (ETL). Here, we summarize two approaches: i) development of interfacial materials between QD and ETL (or HTL); ii) engineering of HTL by blending or multi-layer approaches.

• Asia pacific journal of information systems
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• v.20 no.3
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• pp.191-204
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• 2010

Recently, the CO2 emission and energy consumption have become critical global issues to decide the future of nations. Especially, the spread of IT products and the increased use of internet and web applications result in the energy consumption and CO2 emission of IT industry though information technologies drive global economic growth. EU, the United States, Japan and other developed countries are using IT related environmental regulations such as WEEE(Waste Electrical and Electronic Equipment), RoHS(Restriction of the use of Certain Hazardous Substance), REACH(Registration, Evaluation, Authorization and Restriction of CHemicals) and EuP(Energy using Product), and have established systematic green business/IT strategies to enhance the competitiveness of IT industry. For example, the Japan government proposed the "Green IT initiative" for being compatible with economic growth and environmental protection. Not only energy saving technologies but energy saving systems have been developed for accomplishing sustainable development. Korea's CO2 emission and energy consumption continuously have grown at comparatively high rates. They are related to its industrial structure depending on high energy-consuming industries such as iron and steel Industry, automotive industry, shipbuilding industry, semiconductor industry, and so on. In particular, export proportion of IT manufacturing is quite high in Korea. For example, the global market share of the semiconductor such as DRAM was about 80% in 2008. Accordingly, Korea needs to establish a systematic strategy to respond to the global environmental regulations and to maintain competitiveness in the IT industry. However, green competitiveness of Korea ranked 11th among 15 major countries and R&D budget for green technology is not large enough to develop energy-saving technologies for infrastructure and value chain of low-carbon society though that grows at high rates. Moreover, there are no concrete action plans in Korea. This research aims to deduce the priorities of the Korean green business/IT strategies to use multi attribute weighted average method. We selected a panel of 19 experts who work at the green business related firms such as HP, IBM, Fujitsu and so on, and selected six assessment indices such as the urgency of the technology development, the technology gap between Korea and the developed countries, the effect of import substitution, the spillover effect of technology, the market growth, and the export potential of the package or stand-alone products by existing literature review. We submitted questionnaires at approximately weekly intervals to them for priorities of the green business/IT strategies. The strategies broadly classify as follows. The first strategy which consists of the green business/IT policy and standardization, process and performance management and IT industry and legislative alignment relates to government's role in the green economy. The second strategy relates to IT to support environment sustainability such as the travel and ways of working management, printer output and recycling, intelligent building, printer rationalization and collaboration and connectivity. The last strategy relates to green IT systems, services and usage such as the data center consolidation and energy management, hardware recycle decommission, server and storage virtualization, device power management, and service supplier management. All the questionnaires were assessed via a five-point Likert scale ranging from "very little" to "very large." Our findings show that the IT to support environment sustainability is prior to the other strategies. In detail, the green business /IT policy and standardization is the most important in the government's role. The strategies of intelligent building and the travel and ways of working management are prior to the others for supporting environment sustainability. Finally, the strategies for the data center consolidation and energy management and server and storage virtualization have the huge influence for green IT systems, services and usage This research results the following implications. The amount of energy consumption and CO2 emissions of IT equipment including electrical business equipment will need to be clearly indicated in order to manage the effect of green business/IT strategy. And it is necessary to develop tools that measure the performance of green business/IT by each step. Additionally, intelligent building could grow up in energy-saving, growth of low carbon and related industries together. It is necessary to expand the affect of virtualization though adjusting and controlling the relationship between the management teams.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.11 no.6
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• pp.123-132
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• 2012

Gas sensors has been used very differently that depending on following purposes; Automotive (exhaust gas, fuel mixture gas, oxygen, particulates), agriculture / food industry (fresh, stored, CO2, humidity, NH3, nitrogen oxide gas, organic gas, toxic gas emitted from pesticides and insecticides), industrial / medical (chemical gas, hydrogen, oxygen and toxic gases), military (chemical weapon), environmental measurements (CO and other air pollution consisting of sulfur and nitrogen gas), residential (LNG, LPG, butane, indoor air, humidity). The types of industrial toxic substances are known about 700 species and many of these exist in gaseous form under normal conditions. he multi-gas detection sensors will be developed for casualties that detect the most important and find easy three kinds of gases in marine plant; carbon dioxide(CO2), carbon(CO), ammonia(NH3). Package block consists of gas sensing device minor ingredient, rf front end, zigbee chip. Develope interworking technology between the sensor and zigbee chip inside a package. Conduct a performance test through test jig about prototype zigbee sensor module with rf output power and unwanted emission test. This research task available early address when poisonous gas leaked from large industrial site and contribution for workers' safety at the enclosed space.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.5-10
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• 2012

In general, the fabrications of the LEDs with mesa structure are performed grown by MOCVD method. In order to etch and separate each chips, the LEDs are passed the RIE and scribing processes. The RIE process using plasma dry etching occur some problems such as defects, dislocations and the formation of dangling bond in surface result in decline of device characteristic. The SAG method has attracted considerable interest for the growth of high quality GaN epi layer on the sapphire substrate. In this paper, the SAG method was introduced for simplification and fabrication of the high quality epi layer. And we report that the size of selective area do not affect the characteristics of original LED. The diameter of SAG circle patterns were choose as 2500, 1000, 350, and 200 ${\mu}m$. The SAG-LEDs were measured to obtain the device characteristics using by SEM, EL and I-V. The main emission peaks of 2500, 1000, 350, and 200 ${\mu}m$ were 485, 480, 450, and 445 nm respectively. The chips of 350, 200 ${\mu}m$ diameter were observed non-uniform surface and resistance was higher than original LED, however, the chips of 2500, 1000 ${\mu}m$ diameter had uniform surface and current-voltage characteristics were better than small sizes. Therefore, we suggest that the suitable diameter which do not affect the characteristic of original LED is more than 1000 ${\mu}m$.