• Title/Summary/Keyword: moving substrate

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Magnetron Sputter Coating of Inner Surface of 1-inch Diameter Tube

  • Han, Seung-Hee;An, Se-Hoon;Song, In-Seol;Lee, Keun-Hyuk;Jang, Seong-Woo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.135-135
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    • 2015
  • Tubes are of extreme importance in industries as for fluid channels or wave guides. Furthermore, some weapon systems such as cannons use the tubes as gun barrels. To increase the service life of such tubes, a protective coating must be applied to the tubes' inner surface. However, the coating methods applicable to the inner surface of the tubes are very limited due to the geometrical restriction. A small-diameter cylindrical magnetron sputtering gun can be used to deposit coating layers on the inner surface of the large-bore tubes. However, for small-bore tubes with the inner diameter of one inch (~25 mm), the magnetron sputtering method can hardly be accommodated due to the space limitation for permanent magnet assembly. In this study, a new approach to coat the inner surface of small-bore tubes with the inside diameter of one inch was developed. Instead of using permanent magnets for magnetron operation, an external electro-magnet assembly was adopted around the tube to confine the plasma and to sustain the discharge. The electro-magnet was operated in pulse mode to provide the strong axial magnetic field for the magnetron operation, which was synchronized with the negative high-voltage pulse applied to the water-cooled coaxial sputtering target installed inside the tube. By moving the electro-magnet assembly along the tube's axial direction, the inner surface of the tube could be uniformly coated. The inner-surface coating system in this study used the tube itself as the vacuum chamber. The SS-304 tube's inner diameter was 22 mm and the length was ~1 m. A water-cooled Cu tube (sputtering target) of the outer diameter of 12 mm was installed inside of the SS tube (substrate) at the axial position. The 50 mm-long electro-magnet assembly was fed by a current pulse of 250 A at the frequency and pulse width of 100 Hz and 100 usec, respectively. The calculated axial magnetic field strength at the center was ~0.6 Tesla. The central Cu tube was synchronously driven by a HiPIMS power supply at the same frequency of 100 Hz as the electro-magnet and the applied pulse voltage was -1200 V with a pulse width of 500 usec. At 150 mTorr of Ar pressure, the Cu deposition rate of ~10 nm/min could be obtained. In this talk, a new method to sputter coat the inner surface of small-bore tubes would be presented and discussed, which might have broad industrial and military application areas.

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Effect of Major Factors on the Spray Characteristics of Ultrasonic Atomizing Nozzle (초음파 미립화 노즐의 분무 특성에 미치는 주요 인자의 영향)

  • Jeong, Seon Yong;Lee, Kye Bock
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.18 no.6
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    • pp.1-7
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    • 2017
  • The atomization of a liquid into multiple droplets has many important industrial applications, including the atomization of fuels in combustion processes and coating of surfaces and particles. Ultrasonic atomizing nozzle has a transducer that receives electrical input in the form of a high frequency signal from a power generator and converts that into mechanical energy at the same frequency. Liquid is atomized into a fine mist spray using high frequency sound vibrations. In coating applications, the unpressurized, low-velocity spray reduces the amount of overspray significantly because the droplets tend to settle on the substrate, rather than bouncing off it. The spray can be controlled and shaped precisely by entraining the slow-moving spray in an ancillary air stream using specialized types of spray-shaping equipment. The desired patterns of spray can be obtained using an air stream. To simulate the water mist behavior of an ultrasonic atomizing nozzle using an air stream, the Lagrangian dispersed phase model was employed using the commercial code FLUENT. The effects of the nozzle contraction shape, water droplet size and the pneumatic pressure drop on the spray characteristics were investigated to obtain the optimal condition for coating applications.

STUDIES ON THE MATHEMATICAL KINETICS FOR THE REMOVABLE MOVING SCREEN MEDIA-ACTIVATED SLUDGE PROCESS (회전형 반고정망 활성슬럿지 공법의 수학적 해석에 관한 연구 2. 슬럿지 생산량 및 축적과정과 유출수의 수질에 대하여)

  • HAN Ung-Jun;HAN Yeong-Ho
    • Korean Journal of Fisheries and Aquatic Sciences
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    • v.12 no.3
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    • pp.175-179
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    • 1979
  • One of the major problems in tile activated sludge system has been difficulty in separating the microbial solids from the treated effluent and in returning them to the aeration tank. Another problem has been the digestion of the excess activated sludge. In constrast, it has not been difficult to separate the microbial solids from the treated effluent from the biological fixed-film systems(RBC process, Trickling Filter, FAST process). These systems have also featured less sludge production. Recently, it was proposed to experiment with the RESMAS process in order to eliminate the settling tank and sludge concentration facilities and to reduce the quantity of excess sludge for final disposal. The effluent quality could be predicted by .the concept of the maximum accumulation capacity. However, the hydraulic characteristics of the screen media in the RESMAS reactor were not dynamic. The object of the present study is to evalute the sludge accumulation rate and effluent quality prediction in the REMSMAS process designed in the dynamic hydraulic structure. This process can eliminate the final sedimentation tank and sludge concentration tank needed in the RBC, CMAS, Trickling Filter and FAST processes. Also, the effluent quality is desirable to compare with other processes. It appeared that the value of the sludge holding capacity was higher than those of the RESMAS and FAST processes, and the periods of the critical operating time were proportional to the substrate hydraulic loadings.

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Growth and Nutrient Contents of Tomato Plug Seedlings as Influenced by Pre-planting Fertilizer Levels and Initiation Time of Fertigation (토마토 플러그육묘시 기비수준 및 관비 시작일이 묘 생육과 무기성분 함량에 미치는 영향)

  • Choi, Jong-Myung;Kim, Byoung-Gon
    • Journal of Bio-Environment Control
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    • v.16 no.4
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    • pp.379-387
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    • 2007
  • This research was conducted to evaluate the influence of pre-planting fertilizer levels (PFL) and initiation time of fertigation (ITF) on growth and nutrient contents of tomato plug seedlings. The pre-planting fertilizer levels in a coir+peatmoss+perlite (4:4:2, v/v/v) substrate were adjusted to 0.5X, 1.0X and 1.0X, and initiation time of fertigation was set to 7, 14,21 and 28 days after sowing. Elevated PFL in same ITF increased plant growth such as fresh and dry weights at 35 and 70 days after sowing. Plugs with early feeding among treatments of equal amount of PFL also showed better growth as compared to those of later feeding. In each ITF, 0.5X treatment had the higher tissue $P_2O_5$ contents than 1.0X and 1.5X treatments. Elevated PFL resulted in the decrease of tissue K, Mg and Fe contents and increase of tissue Ca contents. The pH in soil solution of all root substrates except 0.5X treatment at 35 and 70 days after sowing were greater than 7.0, which is too high. This suggests that the amounts and kinds of Ca containing fertilizers should be altered to decrease the pH. The results of this research indicated that fertilizer levels should be increased to 1.5X except Ca fertilizer, and fertigation immediately after moving plug trays from germination room to greenhouse is required to increase crop growth and decrease cropping time.

Formation of Thin $CoSi_2$by Layer Inversion of Co/Nb bi-layer (Co/Nb 이중층 구조의 막역전을 이용한 박막 $CoSi_2$의 형성)

  • Lee, Jong-Mu;Gwon, Yeong-Jae;Lee, Byeong-Uk;Kim, Yeong-Uk;Lee, Su-Cheon
    • Korean Journal of Materials Research
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    • v.6 no.8
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    • pp.779-785
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    • 1996
  • Thin $700^{\circ}C$films were formed through layer inversion of Co/Nb bilayer during rapid thermal annealing(RTA). The Nb interlayer seems to effectively prevent over-consumption of Si and to control the silicidation reaction by forming Co-Nb intermetallic compounds and removing the native oxide formed on Si substrate which interferes the uniform Co-Si interaction. The final layer structure of the Co/Nb bilayer after $700^{\circ}C$ RTA was found to be ${Nb}_{2}{O}_{3}$/${Co}_{2}$Si.CoSi/${NbCo}_{x}$/Nb(O, C)/${CoSi}_{2}$/ Si. The layer inversion and the formation of a stable CoSi, phase occurred above $700^{\circ}C$, and the Nb silicides were not found at any annealing temperature. These may be due to the formation of very stable Co-Nb intermetallic compounds and Nb oxides which limit the moving of Co and Si.

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Effects of Encapsulation Layer on Center Crack and Fracture of Thin Silicon Chip using Numerical Analysis (봉지막이 박형 실리콘 칩의 파괴에 미치는 영향에 대한 수치해석 연구)

  • Choa, Sung-Hoon;Jang, Young-Moon;Lee, Haeng-Soo
    • Journal of the Microelectronics and Packaging Society
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    • v.25 no.1
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    • pp.1-10
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    • 2018
  • Recently, there has been rapid development in the field of flexible electronic devices, such as organic light emitting diodes (OLEDs), organic solar cells and flexible sensors. Encapsulation process is added to protect the flexible electronic devices from exposure to oxygen and moisture in the air. Using numerical simulation, we investigated the effects of the encapsulation layer on mechanical stability of the silicon chip, especially the fracture performance of center crack in multi-layer package for various loading condition. The multi-layer package is categorized in two type - a wide chip model in which the chip has a large width and encapsulation layer covers only the chip, and a narrow chip model in which the chip covers both the substrate and the chip with smaller width than the substrate. In the wide chip model where the external load acts directly on the chip, the encapsulation layer with high stiffness enhanced the crack resistance of the film chip as the thickness of the encapsulation layer increased regardless of loading conditions. In contrast, the encapsulation layer with high stiffness reduced the crack resistance of the film chip in the narrow chip model for the case of external tensile strain loading. This is because the external load is transferred to the chip through the encapsulation layer and the small load acts on the chip for the weak encapsulation layer in the narrow chip model. When the bending moment acts on the narrow model, thin encapsulation layer and thick encapsulation layer show the opposite results since the neutral axis is moving toward the chip with a crack and load acting on chip decreases consequently as the thickness of encapsulation layer increases. The present study is expected to provide practical design guidance to enhance the durability and fracture performance of the silicon chip in the multilayer package with encapsulation layer.