• Transactions on Electrical and Electronic Materials
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• v.6 no.6
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• pp.280-283
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• 2005

The moving photocarrier grating (MPG) technique for the determination of the carrier mobilities and the recombination lifetime of $\alpha$-Se:As films has been studied. The electron and hole drift mobility and the recombination lifetime of $\alpha$-Se films with arsenic (As) additions have been obtained from measurement of the short circuit current density $j_{sc}$ as a function of grating velocity and spatial period. The hole mobility decreases due to defect density of hole traps when x exceeds 0.003, whereas the hole mobility increases for the case of low As addition (x$\le$0.003). We have found an increase in hole drift mobility and recombination lifetime, especially when As with (x = 0.003) is added into the $\alpha$-Se film.

• Korean Journal of Digital Imaging in Medicine
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• v.8 no.1
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• pp.51-55
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• 2006

The effects of Asaddition in amorphous selenium(a-Se) films for digital X-ray conversion material have been studied using the moving photocarrier grating(MPG) technique. This method utilizes the moving interference pattern generated by the superposition of the two frequency shifted laser beams for the illumination of the sample. This moving intensity grating induces a short circuit current, j$_{sc}$ in a-Se:As film. The transport parameters of the sample are extracted from the grating-velocity dependent short circuit current induced in the sample along the modulation direction. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic(As) additions have been obtained. We have found an Increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with X-ray sensitivity for a-Se:As device. The fabricated a-Se(0.3% As) device film exhibited the highest X-ray sensitivity out of 5 samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.305-306
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• 2005

The effects of As addition In amorphous selenium (a-Se) films for digital X-ray conversion material have been studied using the moving photocarrier grating (MPG) technique We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with X-ray sensitivity for a-Se:As X-ray device. The fabricated a-Se (0.3%As) based X-ray detector exhibited the highest X-ray sensitivity of 5 samples.

• Journal of radiological science and technology
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• v.28 no.4
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• pp.267-272
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• 2005

The effects of As addition in amorphous selenium (a-Se) films for digital X-ray conversion material have been studied using the moving photocarrier grating (MPG) technique. This method utilizes the moving interference pattern generated by the superposition of the two frequency shifted laser beams for the illumination of the sample. This moving intensity grating induces a short circuit current, jsc in a-Se:As film. The transport parameters of the sample are extracted from the grating-velocity dependent short circuit current induced in the sample along the modulation direction. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic (As) additions have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with X-ray sensitivity for a-Se:As device. The fabricated a-Se(0.3% As) device film exhibited the highest X-ray sensitivity out of 5 samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.47-48
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• 2005

The moving photocarrier grating(MPG) technique for the determination of the carrier mobilities and the recombination lifetime in a-Se:As films have been studied. The electron and hole drift mobility and the recombination lifetime of a-Se films with arsenic (As) additions have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film. However, the electron mobility exhibits no observable change up to 0.5% As addition in a-Se films.0.3% As added a-Se film also exhibits the maximum short circuit current densities per laser intensity of $5.29\times10^{-7}$ A/W.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.85-88
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• 2006

The transport properties of amorphous selenium typical of the material used in direct conversion x-ray imaging devices are reported. The effects of As addition on the carrier mobility and recombination lifetime in amorphous selenium (a-Se) films have been studied using the moving photocarrier grating (MPG) technique. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with the drift mobilities of holes and electrons obtained by time of flight (TOF) measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.252-253
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• 2005

The effects of As addition in amorphous selenium (a-Se) films on the carrier mobilities and the recombination lifetime have been studied using the moving photo-carrier grating (MPG) measurements. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic (As) additions up to 1% have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density from shallow traps.