• 마이크로전자및패키징학회지
• /
• 제9권4호
• /
• pp.1-9
• /
• 2002

Ball grid array (BGA) substrate 상의 0.5 $\mu\textrm{m}$Au/5 $\mu\textrm{m}$Ni/Cu 층으로 구성된 접촉 패드(pad)와 In-15(wt.%)Pb-5Ag 솔더 볼 사이에서 리플로우 및 고상 시효동안 일어나는 금속학적 반응 특성이 조사되었다. 1-5 분의 리플로우 시간에 따라 솔더/패드 계면에서 $AuIn_2$ 또는 Ni-In 금속간 화합물층이 형성됨이 관찰되었다. 리플로우 동안 용융 In-l5Pb-5Ag 솔더 내로의 Au 층의 용해 속도는 $2\times 10^{-3}$ $\mu\textrm{m}$/sec 정도로 측정되어 공정 Sn-37Pb와 비교하여 매우 느린 것으로 관찰되었다. $130^{\circ}C$에서 500시간의 고상 시효 후에는 초기 리플로우 시간에 관계없이 $Ni_{28}In_{72}$ 금속간 화합물층이 약 3 $\mu\textrm{m}$까지 성장하였다. 이를 통하여 솔더 합금에서의 In 원자들은 아래의 Ni 층과 반응하기 위하여 리플로우 동안 형성된 $AuIn_2$상을 통하여 확산하는 것으로 관찰되었다. 미세구조 관찰과 전단 시험을 통하여 In-l5Pb-5Ag합금의 경우는 Sn-37Pb 조성과는 달리 Au/Ni surface finish 상에 사용시에도 솔더 접합부에서의 Au-embrittlement를 야기 시키지 않는 것으로 분석되었다.

• 대한금속재료학회지
• /
• 제48권11호
• /
• pp.1041-1046
• /
• 2010

The reactions between a Sn-3.0Ag-0.5Cu solder alloy and electroless Ni/electroless Pd/immersion Au (ENEPIG) surface finishes with various Pd layer thicknesses (0, 0.05, 0.1, 0.2, $0.4{\mu}m$) were examined for the effect of the Pd layer on the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow at $235^{\circ}C$. The thin layer deposition of an electroless Pd (EP) between the electroless Ni ($7{\mu}m$) and immersion Au ($0.06{\mu}m$) plating on the Cu substrate significantly retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow. Its retarding effect increased with an increasing EP layer thickness. When the EP layer was thin (${\leq}0.1{\mu}m$), the retardation of the massive spalling was attributed to a reduced growth rate of the $(Cu,Ni)_6Sn_5$ layer and thus to a lowered consumption rate of Cu in the bulk solder during reflow. However, when the EP layer was thick (${\geq}0.2{\mu}m$), the initially dissolved Pd atoms in the molten solder resettled as $(Pd,Ni)Sn_4$ precipitates near the solder/$(Cu,Ni)_6Sn_5$ interface with an increasing reflow time. Since the Pd resettlement requires a continuous Ni supply across the $(Cu,Ni)_6Sn_5$ layer from the Ni(P) substrate, it suppressed the formation of $(Ni,Cu)_3Sn_4$ at the $(Cu,Ni)_6Sn_5/Ni(P)$ interface and retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer.

• 대한용접접합학회:학술대회논문집
• /
• 대한용접접합학회 2010년도 춘계학술발표대회 초록집
• /
• pp.75-75
• /
• 2010

3D 패키징 기술은 전기소자의 소형화, 고용량화, 저전력화, 높은 신뢰성등의 요구와 함께 그 중요성이 대두대고 있다. 이러한 3D 패키징의 연결방법은 와이어 본딩 또는 플립칩등의 기존의 방법에서 TSV(Through Silicon Via)를 이용하여 적층하는 방법이 주목받고 있다. TSV는 기존의 와이어 본딩과 비교하여 고집적도, 빠른 신호전달, 낮은 전력소비 등의 장점을 가지고 있어 많은 연구가 진행되고 있다. TSV의 세부 공정 중 비아필링(Via filling)기술은 I/O수 증가와 미세피치화에 따른 비아(Via) 직경의 감소 및 종횡비(Via Aspect Ratio)증가로 인해 기존 필링 공정으로는 한계가 있다. 기존의 비아 홀(Via hole)에 금속을 필링하기 위한 방법으로 전기도금법이 많이 사용되고 있으나, 전기도금법은 전기도금액 조성, 첨가제의 종류, 전류밀도, 전류모드 등에 따라 결과물에 큰 차이가 발생되어, 최적공정조건의 도출이 어렵다. 또한 20um이하의 비아직경과 높은 종횡비로 인하여 충진시 void형성등의 문제점이 발생하기도 한다. 본 연구에서는 용융솔더와 진공을 이용하여 비아를 필링시켰다. 이 방법은 관통된 비아가 형성된 웨이퍼 양단에 압력차를 주어, 작은 직경을 갖는 비아 홀의 표면장력을 극복하고, 용융상태의 솔더가 관통된 비아 홀 내부로 필링되는 방법이다. 관통 비아홀이 형성 된 웨이퍼 위에 솔더페이스트를 $250^{\circ}C$이상 온도를 가해 용융상태로 만든 후 웨이퍼 하부에 진공을 형성하여 필링하는 방법과 용융솔더를 노즐을 통하여 위쪽으로 유동시켜 그 위에 비아홀이 형성된 웨이퍼를 접촉하고 웨이퍼 상부에 진공을 형성하여 필링하는 방법으로 실험을 각각 실시하였다. 이 때, 웨이퍼 두께는 100um이하이며 홀 직경은 20, 30um, 웨이퍼 상부와 하부의 진공차는 약 0.02~0.08Mpa, 진공 유지시간은 1~3s로 실시하여 최적 조건을 고찰하였다. 각 조건에 따른 필링 후 단면을 전자현미경(FE-SEM)을 통해 관찰하였다. 실험 결과 0.04Mpa 이상에서 1s내의 시간에 모든 비아홀이 기공(Void)없이 완벽하게 필링되는 것을 관찰하였으며 이 결과는 기존의 방법에 비하여 공정시간을 감소시켜 생산성이 대폭 향상 될 수 있는 방법임을 확인하였다.

• 한국초전도ㆍ저온공학회논문지
• /
• 제12권2호
• /
• pp.9-12
• /
• 2010

A lamination system using reflow soldering was developed to enhance the mechanical properties of high temperature superconductor (HTS) tape. The laminated coated conductor tape was fabricated using the continuous lamination process. The mean, maximum, and minimum tensile loads in a T-peel test of the laminated coated conductor were 9.9 N, 12.5 N, and 7.6 N, respectively. The critical current ($I_c$) distributions of the non-laminated and laminated coated conductor were compared using anon-contact Hall probe method. The transport $I_c$ nearly matched the non-contact $I_c$; however, some degraded Ic regions were found on the length of 800 cm of laminated coated conductor. We confirmed that the cause of the partially degraded $I_c$ was due to an increase in line tension by (1) solidification induced by a change of composition that usually occurs in molten brass (Cu, Zn) in solder, or (2) non-homogeneity of the thickness of the coated conductor or metal tapes. We suggest that reflow soldering is a promising method for reinforced HTS tape if the controlling solder thickness and lamination guide are modified.

• 한국마이크로전자및패키징학회:학술대회논문집
• /
• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
• /
• pp.85-91
• /
• 2002

Even though electroless Hi and Sn-Ag-Cu solder are widely used materials in electronic packaging applications, interfacial reactions of the ternary Ni-Cu~Sn system have not been known well because of their complexity. Because the growth of intermetallics at the interface affects reliability of solder joint, the intermetallics in Ni-Cu-Sn system should be identified, and their growth should be investigated. Therefore, in present study, interfacial reactions between electroless Ni UB7f and 95.5Sn-4.0Ag-0.5Cu alloy were investigated focusing on morphology of the IMCs, thermodynamics, and growth kinetics. The IMCs that appear during a reflow and an aging are different each other. In early stage of a reflow, ternary IMC whose composition is Ni$_{22}$Cu$_{29}$Sn$_{49}$ forms firstly. Due to the lack of Cu diffusion, Ni$_{34}$Cu$_{6}$Sn$_{60}$ phase begins growing in a further reflow. Finally, the Ni$_{22}$Cu$_{29}$Sn$_{49}$ IMC grows abnormally and spalls into the molten solder. The transition of the IMCs from Ni$_{22}$Cu$_{29}$Sn$_{49}$ to Ni$_{34}$Cu$_{6}$Sn$_{60}$ was observed at a specific temperature. From the measurement of activation energy of each IMC, growth kinetics was discussed. In contrast to the reflow, three kinds of IMCs (Ni$_{22}$Cu$_{29}$Sn$_{49}$, Ni$_{20}$Cu$_{28}$Au$_{5}$, and Ni$_{34}$Cu$_{6}$Sn$_{60}$) were observed in order during an aging. All of the IMCs were well attached on UBM. Au in the quaternary IMC, which originates from immersion Au plating, prevents abnormal growth and separation of the IMC. Growth of each IMC is very dependent to the aging temperature because of its high activation energy. Besides the IMCs at the interface, plate-like Ag3Sn IMC grows as solder bump size inside solder bump. The abnormally grown Ni$_{22}$Cu$_{29}$Sn$_{49}$ and Ag$_3$Sn IMCs can be origins of brittle failure.failure.

• Journal of Welding and Joining
• /
• 제32권3호
• /
• pp.19-26
• /
• 2014

Through Silicon Via (TSV) technology is the shortest interconnection technology which is compared with conventional wire bonding interconnection technology. Recently, this technology has been also noticed for the miniaturization of electronic devices, multi-functional and high performance. The short interconnection length of TSV achieve can implement a high density and power efficiency. Among the TSV technology, TSV filling process is important technology because the cost of TSV technology is depended on the filling process time and reliability. Various filling methods have been developed like as Cu electroplating method, molten solder insert method and Ti/W deposition method. In this paper, various TSV filling methods were introduced and each filling materials were discussed.

• 마이크로전자및패키징학회지
• /
• 제17권3호
• /
• pp.59-63
• /
• 2010

Immersion Sn plating was produced on Cu foil by distributing nano-sized diamonds (ND). The ND distributed on the coating surface broke the continuity of Sn-oxide layer, therefore leading to penetrate the molten solder through the oxide and retarding the wettability degradation during a reflow process. Furthermore, the ND in the Sn coating played a role of diffusion barrier for Sn atoms and decreased the growth rate of intermetallic compound ($Cu_6Sn_5$) layer during the solid-state aging. The study confirmed the importance of ND to improve the wettability and reliability of the Sn plating. Complete dispersion of the ND within the immersion Sn plating needs to be further developed for the electronic packaging applications.

• 반도체디스플레이기술학회지
• /
• 제15권4호
• /
• pp.10-15
• /
• 2016

In this paper, novel ball grid array (BGA) interconnection process using solderable anisotropic conductive adhesives (SACAs) with low-melting-point alloy (LMPA) fillers have been developed to enhance the processability in the conventional capillary underfill technique and to overcome the limitations in the no-flow underfill technique. To confirm the feasibility of the proposed technique, BGA interconnection test was performed using two types of SACA with different LMPA concentration (0 and 4 vol%). After the interconnection process, the interconnection characteristics such as morphology of conduction path and electrical properties of BGA assemblies were inspected and compared. The results indicated that BGA assemblies using SACA without LMPA fillers showed weak conduction path formation such as solder bump loss or short circuit formation because of the expansion of air bubbles within the interconnection area due to the relatively high reflow peak temperature. Meanwhile, assemblies using SACA with 4 vol% LMPAs showed stable metallurgical interconnection formation and electrical resistance due to the favorable selective wetting behavior of molten LMPAs for the solder bump and Cu metallization.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2006년도 춘계학술대회 논문집
• /
• pp.585-586
• /
• 2006

In this paper, we present a design, analysis, fabrication and performance test of the novel DoD metal-jet system for application to the high-density and high-temperature-melting materials. Based on the theoretical analysis, we design the metal-jet print head system and fabricate the metal-jet system, which can eject the droplet of lead-free metal solder in the high-temperature. In the experimental test, we set up the test apparatus for visualization of the droplet ejection and measure the Ejected droplet volume and velocity. As a result, the diameter, volume and the velocity of the ejected droplet are about $65-70{\mu}m$, 145-180 pl and 4m/sec. We also fabricate vertical and inclined 3D micro column structures using the present molten metal inkjet system. The measured geometries of the micro column structures are about height of $2,100{\mu}m$, diameter of $200{\mu}m$ and aspect ratio of 10.5 for vertical micro column and $1,400{\mu}m$ of height and $150{\mu}m$ of diameter for $65^{\circ}$-inclined micro column, respectively.

• 한국표면공학회지
• /
• 제35권2호
• /
• pp.129-137
• /
• 2002

The purpose of solderability assessment is to predict the effectiveness of soldering process. It is important for companies pursuing zero defects manufacturing because poor solderability is the major cause of two third of soldering failures. The most versatile solderability method is wetting balance method. However, there exist so many indices for wettability in the wetting balance test e.g. time to reach 2/3 values of maximum wetting force, tine to reach zero wetting force, maximum withdrawal force. In this study, three solderability assessment methods, which were the maximum withdrawal force, the wetting balance and the dynamic contact angle (DCA), were evaluated by comparing each other. The wetting balance technique measures the solderability by recording the forces exerted from the specimen after being dipped into the molten solder. Then the force at equilibrium state can be used to calculate a contact angle, which is known as static contact angles. The DCA measures contact angles occurred during advancing and withdrawing of the specimen and the contact angles are known as dynamic contact angles. The maximum withdrawal force uses the maximum force during withdrawal movement and then a contact angle can be calculated. In this study, the maximum withdrawal force method was found to be an objective index for measuring the solderability and the experiment results indicated good agreement between the maximum withdrawal force and the wetting balance method.