• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 2005년도 춘계학술발표대회 및 제8회 신소재 심포지엄 논문개요집
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• pp.50-50
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• 2005

• Journal of the Korean Institute of Telematics and Electronics B
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• 제30B권11호
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• pp.47-55
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• 1993

This paper is to design an autobalancing system based-on microprocessor for hemodiafiltration (HDF) system. The proposed system consist of motor control part, thermostatic control part, alarm system and electronic scale which ar automatically controlled by microprocessor. Conventional hemodialysis system can not remove medium molecular articles but hemodialysis system with the proposed system can remove and infuse substitute to the patient. This system can be easily interfaced with any other conventional HD system. The results obtained from performance evaluation of the proposed system are suitable for clinical supporting system.

• Electronics and Telecommunications Trends
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• 제33권6호
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• pp.41-49
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• 2018

Mid-infrared optical sensors have a number of compelling advantages for remote sensing and the simultaneous measurement of mixtures. However, they still have difficulties in accurate detection owing to signal interferences among a large number of molecular fingerprints in the mid-infrared band, which result in very slow commercialization. Higher sensitivity and higher selectivity are required to overcome this obstruction in measurement technology. In this paper, we review and analyze the trends of mid-infrared sensor technologies enhancing the sensitivity and selectivity.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권5호
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• pp.695-701
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• 2016

Be-doped GaSb layers were grown on highly mismatched semi-insulating GaAs substrate (001) with $2^{\circ}$ offcut towards <110> at low growth temperature, by molecular beam epitaxy (MBE). The influence of Be doping on the crystallographic quality, surface morphology, and electrical properties, was assessed by X-ray diffraction, Nomarski microscopy, and Hall effect measurements, respectively. Be impurities are well behaved acceptors with hole concentrations as high as $9{\times}10^{17}cm^{-3}$. In addition, the reduction of GaSb lattice parameter with Be doping was studied.

• Proceedings of the IEEK Conference
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.735-738
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• 2003

In this paper, we report a molecular dynamics (MD) simulation of the ion implantation for nano-scale devices with ultra-shallow junctions. In order to model the profile of ion distribution in nanometer scale, the molecular dynamics with a damage model has been employed. As an exemplary case, we calculate the dopant profile during the ion implantation of B, As, and Ge.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권3호
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• pp.131-135
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• 2006

High electron mobility transistors with InAs channels and antimonide barriers were grown on Si and GaAs substrates by means of molecular beam epitaxy. While direct growth of Sb materials on Si substrate generates disordered and coalescences 3-D growth, smooth and mirror-like 2D growth can be repeatedly obtained by inserting AlSb QD layers between them. Room-temperature electron mobilities of over 10,000 $cm^2/V-s$ and 20,000 $cm^2/v-s$ can be routinely obtained on Si and GaAs substrates, respectively, after optimizing the buffer structure as well as maintaining InSb-like interface.

• Bulletin of the Korean Chemical Society
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• 제24권11호
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• pp.1671-1674
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• 2003

The effects of amine donors ($a:NH_2,\;b:NMe_2,\;c:NMePh,\;d:NPh_2$) and conjugation length on the molecular hyperpolarizabilities of a series of dipolar molecules have been theoretically investigated by using CPHF/6-31G method. The first hyperpolarizabilities (${\beta}$) of p-nitrobenzene derivatives increase with the donor in the order, $NH_2\;<\;NMe_2\;<\;NMePh\;<\;NPh_2$, whereas slightly different order is observed in more conjugated derivatives, i.e., $NH_2\;<\;NPh_2\;<\;NMe_2\;<\;NMePh$. The result has been attributed to the extent of charge transfer and torsion angle. Moreover, the results show that "non-traditional" ${\pi}$-conjugation effect exists in small compounds and decreases as the conjugation length between donor and acceptor increases.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1429-1431
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• 2005

Organic molecular-beam deposition of Mg:Ag thin films with a low Mg concentration on tris (8-hydroxyquinolino) aluminum $(Alq_3)$ layers at room temperature was performed to investigate the feasibility of using Mg:Ag thin films as cathode electrodes in organic light-emitting devices (OLEDs). The effective barrier height of the $Mg:Ag/Alq_3$ heterointerface, determined from current-voltage measurements, was as low as 0.23 eV. These results help improve understanding the electrical properties of the $Mg:Ag/Alq_3$ heterointerfaces in OLEDs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.914-916
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• 2003

Novel red organic electroluminescent (EL) dye, RED was developed for an application to the emission layer of EL device. Well known red material DCJTB was also used for comparison. Two kinds of devices were fablicated; one is ITO/ CuPc / TPD / 0.5% RED-1 in Alq3/ Alq3/ Li20/ Al and the other is ITO/ CuPc /TPD / 0.5% DCJTB in Alq3/Alq3/ Li20 / Al. External quantum efficiency of the EL device with RED was two times higher than that of the device with DCJTB. The maximum EL peak was detected at 635nm in the RED EL device.

• Journal of Magnetics
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• 제3권3호
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• pp.92-95
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• 1998

In this paper we report the low and high angle diffraction results, and the magnetic and magnetroesistive characteristics of the spin valve multilayer structure prepared by the sputter machine Emerald II in the Balzers Laboratory. The investigated system consists of a ferromagnetic free layer (7 nm NiFe) and a ferromagnetic pinned layer (7 nm NiFe), separated from each other by a nonmagnetic (2.1 nm Cu) spacer. The NiFe pinned layer is fixed by the exchange coupling with an antiferromagnetic layer (10 nm FeMn). For such system the magnetoresistance ratio ΔR/R=3.58%, the interlayer exchange coupling $H_c=6.4$ Oe and the field sensitivity 1.15%/Oe were otained.