• Bulletin of the Korean Chemical Society
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• v.16 no.9
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• pp.819-823
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• 1995

Thin films of two kinds of Prussian Blue (PB)-modified, using iron(Ⅲ) complex instead of conventional FeCl3, were prepared on a gold substrate and these films were able to be electrochemically reduced in potassium nitrate solution. In case of PB-modified films prepared from Fe(Ⅲ)-ethylenediamine-N,N'-diacetic acid (FeEN3+)/K3Fe(CN)6 solution, the mid-peak potential was 0.156 V in 0.1 M KNO3 and it was found that potassium ion migrates into or out of the film during the electrolysis. These films were shown to be electrochromic. These films exhibited smaller peak separation than those formed from Fe(Ⅲ)-tartaric acid (FeTA3+)/K3Fe(CN)6 system. The diffusion coefficient of Fe(CN)63-/4- redox couple, evaluated using the fabricated Au rotating disc electrode(rde) previously reported, was in good agreement with the existing data. Two experimental procedures, including the voltammetry at relatively low scan rates and the rde study, have been used in order to characterize the electrode kinetics. The electrode kinetics of some redox couples (FeEN2+-FeEN3+ and FeTA2+-FeTA3+) on both PB-modified thin films and bare Au electrode were studied using a Au rde. In all cases the rate constants of electron transfer obtained with the PB-modified film electrodes were only slightly less than those obtained for the same reaction on bare Au disc electrodes. The conductivities, as determined from the slopes of the i-V curves for a ca. 1 mm sample for dried PB-modified potassium-rich and deficient bulk samples pressed between graphite electrodes, were 6.21 × 10-7 and 2.03 × 10-7(Ω·cm)-1, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.57-64
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• 2007

New Chip-on-glass technology to attach an Si chip directly on the glass substrate of LCD panel was studied with local heating method of the Si chip by using thin film heater fabricated on the Si chip. Square-shaped Cu thin film heater with the width of $150\;{\mu}m$, thickness of $0.8\;{\mu}m$, and total length of 12.15 mm was sputter-deposited on the $5\;mm{\times}5\;mm$ Si chip. With applying current of 0.9A for 60 sec to the Cu thin film heater, COG bonding of a Si chip to a glass substrate was successfully accomplished with reflowing the Sn-3.5Ag solder bumps on the Si chip.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.418-427
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• 1997

The effect of $La_2O_3$ as a dopant on the microstructure structure, crystal structure and electrical properties was studied. $0.05Pb(Sn_{0.5}Sb_{0.5})O_3＋0.11PbTiO_3＋0.84PbZroO_3＋0.4Wt%MnO_2$ (=0.05PSS ＋0.11PT＋0.84PZ+0.4wt%$MnO_2$) systems doped with 0, 0.1, 0.3, 0.5, 0.7, 1, 3, 5 mole% $La_2O_3$ were fabricated and investigated sintering density, crystal structure and micro-structure. The sintered 0.05PSS＋0.11PT＋0.84PZ+0.4wt%$MnO_2$ system doped with $La_2O_3$showed sintering density of the range of 7.683 g/㎤ of 0 mole% doping to 7.815 g/㎤ of 0 mole% doping. The average grain sizes in the range of 0 to 5 mole% $La_2O_3$were decreased from 9.0 $\mu\textrm{m}$ to 1.3 $\mu\textrm{m}$. X-ray diffraction investigation of sintered bodies showed that solid solutions were formed between 0.05PSS＋0.11PT＋0.84PZ+0.4wt%$MnO_2$ system and $La_2O_3$ in the range of 0 to 1 mole% but second phases were formed in case of 3, 5 mole%. Dielectric constants at 1 kHz were increased with 0 to 3 mlole% $La_2O_3$ before and after poling at the condition of 5 $KV_{DC}$/mm at $120^{\circ}C$ or $140^{\circ}C$ during 20 minutes. All Dielectric losses at 1 kHz were less than 1%, Curie temperatures were $208^{\circ}C$, $183^{\circ}C$, $152^{\circ}C$ and $127^{\circ}C$ at 0, 0.5, 1, 3 mole% $La_2O_3$ respectively. The values of $K_p$ were increased from 0 to 3 mole% $La_2O_3$ after poling at condition of 5 $KV_{DC}$mm at the condition of $120^{\circ}C$ or $140^{\circ}C$. The case of 0.7 mole% $La_2O_3$doped 0.05PSS＋0.11PT＋0.84PZ+0.4wt%$MnO_2$ system showed $K_p$ of 14.5% by poling at $140^{\circ}C$ during 20 minutes.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.27 no.5
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• pp.643-658
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• 1994

The sedimentary records of anthropogenic metal loads in the Suyeong Bay, Pusan were determined by combining the Pb-210 dating technique with the measurements of heavy metals in the sediment cores. The sedimentation rates of sediment particles ranged from $0.12\;to\;0.20\;g/m^2/yr\;or\;2.4{\sim}4.0\;mm/yr$ in accumulation rates. The lowest sedimentation rate was observed at station S3 which was characterized by a bottom with relatively low organic matter contents(e.g. TIL and TOC). Heavy metals showed generally higher concentrations at station S1 and S2 near the mouth of the Suyeong River than at station S3 and the outmost station S4. The contents of copper, lead and zinc in the sediment cores especially from station S1 and S2 began to increase around 1930, and were at their highest levels in the $1960{\sim}1970$ period as a result of increasing industrial activities. Concentrations of these heavy metals have slightly decreased since 1970, probably due to regulation of pollution discharge. The natural background levels of copper, lead and zinc in the sediments of this bay ranged $18{\pm}4ppm,\;28{\pm}6ppm\;and\;74{\pm}9ppm$, respectively, by averaging the contents in the sediment depths corresponding to periods between about 1900 and 1920 at the four stations. The total amounts of anthropogenic loads deposited in the sediments since about 1930 were estimated to be $9{\sim}291{mu}g/cm^2$ for lead, $165{\sim}1122{mu}g/cm^2$ for zinc and $20{\sim}208{mu}g/cm^2$ for copper. These values were remarkably high at stations S1 and S2 relative to the other two stations. At stations S1 and S2, the anthropogenic loads of lead, copper and zinc constituted $29{\sim}30\%,\;32{\sim}42\%\;and\;28{\sim}35\%$ of the total sedimentary inventories at the present day, respectively. These metal contents have a good correlation(r>0.7) with each other and cadmium measurements also show a positive linear relation with nickel or total organic nitrogen.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1456-1457
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• 2008

본 논문에서는 박막 PZT(Pb(Zr,Ti)O3)를 이용한 d33모드의 자가 발전 소자를 설계 및 제작 하였다. 자가 발전 소자는 진동 에너지를 압전 현상을 통해 전기 에너지로 변환하는 소자로서, 제안한 구조는 단일 외팔보가 아닌 20개 이상의 외팔보를 원형으로 집적한 구조를 갖기 때문에, 기존의 단일 외팔보 위주의 자가발전 소자보다 출력 전력이 우수하다. 자가 발전 소자의 성능 최적화를 위해 유한요소기법(FEM)을 통해 기계적 특성을 분석하였으며, 마이크로 머시닝 기법을 이용하여 초박형의 자가 발전 소자를 제작할 수 있었다. 제작된 자가발전 소자는 $1.2mm\times1.2mm\times0.5mm$ (높이)의 크기를 갖는다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.191-194
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• 1998

This Paper present a new structure for a piezoelectric transformer, operating in thickness extensional vibration mode. Modified PbTiO$_3$ family ceramics were used for the Piezoelectric transformer, because it is a material with large anisotropy between electromechanical coupling facters k$\sub$t/ and k$\sub$p/. Piezoelectric transformer was fabricated that is 20mm long, 20mm wide and 3.1mm thick. Resonant frequencies of sencond thickness extensional vibration mode is 1.72MHz at loading resistance 100{$\Omega$]. And Voltage gain of piezoelectric ceramics is showed 0.53 at resonant frequency of sencond thickness extensional vibration mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.746-748
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• 2002

The effect of $MnO_2$ addition in $0.05Pb(Sn_{0.5}Sb_{0.5})O_3-0.8PbZrO_3-0.15PbTiO_3$(0.05PSS-0.8PZ-0.15PT) ceramics on crystal structure and electrical properties were studied. The sintering temperature and time were $1230^{\circ}C{\sim}1270^{\circ}C$ and 2hr, respectively. Then crystal structure, dielectric and pyroelectric properties were investigated. All the poled specimens showed the lower dielectric constant and $tan{\delta}$ than the unpoled specimens. Dielectric constant at 1kHz of the 0.05PSS-0.8PZ-0.15PT(MnO2 0.3wt%) system specimen sintered at $1250^{\circ}C$ for 2hr were 270 and showed the lowest $tan{\delta}$ of 0.2% after poling of $2kV_{DC}/mm$ at $150^{\circ}C$ for 30 minutes. Pyroelectric coefficient was maximum value of $50nC/cm^2K$ and Curie temperature was $224^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.286-293
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• 2000

In this paper we investigated the structural dielectric and piezoelectric properties of 0.03Pb(Sb$\_$1/2//Nb$\_$1/2/)-0.97Pb(Zr$\_$0.495//Ti$\_$0.505/)O$_3$+0.5 wt% excess PbO + wt% MnO(X=0, 0.1, 0.3, 0.5, 0.7) ceramics to develop the high-power piezoelectric transformer. The piezoelectric transformers with dimension of 27.5$\times$27.5$\times$2.5［mm$^3$］were fabricated and their electrical properties were measured. Maxima of piezoelectric properties such as electro-mechanical coupling factor of 0.534 and mechanical quality factor of 1487 were obtained for the PSN-PZT with 0.3wt% MnO. voltage step-up ratios of piezoelectric transformers at 500［Ω］and no load were 0.78, 12.82, respectively. The maximum efficiency of piezoelectric transformer was 98.6% at 800［Ω］. While the 14W fluorescent lamp were driven by the piezoelectric transformer for more than 20［min］, increment of temperature in the piezoelectric transformer was 7［$\^{C}$］.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.163-168
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• 2003

In the present study, the piezoelectricity and polarization of multilayer ceramic actuator, being designed to stack PMN-PZ-PT ceramic layers and Ag-Pd electrode layers alternatively, were investigated under a consideration of geometric factor, the volume ratio of the ceramic to the electrode layers. The actuators were fabricated by tape casting of $0.2Pb(Mg_{1/3}Nb_{2/3)O_3-0.38PbZrO_3-0,42PbTiO_3$ followed by lamination and burnout & co-firing processes. The actuators of $10\times10\times0.6~2\textrm{mm}^3$ in size were formed in a way that $60 ~ 200\mu\textrm{m}$ thick were stacked alternatively with $5\mu\textrm{m}$ thick electrode layer. Increases in polarization and electric field-induced displacement with thickness of the ceramic layer were attributed to change of $90^{\circ}$/$180^{\circ}$ domain ratio, which was affected by interlayer internal stress. The piezoelectricity and actuation behaviors were found to depend upon the volume ratio (or thickness ratio) of ceramic to electrode layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.83-83
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• 2009

우수한 압전성을 가지는 PZT는 인체에 유해한 다량의 PbO을 함유하여 심각한 환경문제를 야기함은 물론 제조 공정 중 PbO 휘발 억제 시설 구비에 따른 경제적 부담 등 문제점이 지적되었다. 따라서 환경오염 및 가격경쟁력을 갖추기 위해 현재 무연 조성 세라믹스에 대한 많은 연구가 진행되고 있다. 최근 비납계 압전 세라믹의 연구는 비스무스 레이어형과 페로브스카이트 형 비납계 세라믹스의 연구가 활발히 진행되고 있다. 특히 $(Na,K)NbO_3$ 계는 페로브스카이트 구조를 가지는 비납계 세라믹으로 현재 많은 연구가 진행되고 있다. 이 물질은 PZT계와 유사하게 상전이(morphotropic phase boundary:MPB)영역을 가지고 있 으며 이 영역에서 높은 압전 특성을 보여주고 있다. 최근 $Na_{0.5}K_{0.5}NbO_3$에 $LiTaO_3$를 치환하여 우수한 압전 특성을 지니는 조성이 개발되고 있지만, 보통 소성법으로 제조된 세라믹스는 PZT계 세라믹스와 비교하여 특성이 떨어진다. 본 연구에서는 압전성이 우수한 $(Na_{0.44}K_{0.52}Li_{0.44})(Nb_{0.90}Sb_{0.06}Ta_{0.04})O_3$ 조성에 도너 도핑과 억셉터 도핑을 한 다음 전기기계결합계수, 압전상수, 유전상수의 변화를 평가하고, hardener 와 softener 특성이 본조성에서 나타나는지를 관찰하였다. 실험방법은 보통 소성법을 사용하였으며, 분쇄와 혼합은 직경 3 mm zirconia ball을 사용하여 볼밀 하였다. $850^{\circ}C$ 에서 5h 하소 후 $1100{\sim}1200^{\circ}C$ 에서 소결하고, 두께 1 mm로 연마한 다음 silver paste를 $650^{\circ}C$ 에서 소부하여 전극을 형성하였다. 제작된 시편은 $90^{\circ}C$의 실리콘유에서 3~4 kV/mm의 전계를 가해 20분간 분극 처리를 수행하였다. 제작된 시편의 압전전하 상수 값은 d33-meter(APC-8000)를 이용하여 측정하였고, 유전율, 전기기계결합계수 및 기계적품질계수 등은 임피던스 분석기 (impedance/gain phase analyzer)를 이용하여 특성을 측정 하였다. 또한 전압-분극 특성의 평가에는 강유전특성 측정기(ferroelectric tester: Precision-LC, Radiant Technologies, USA)를 이용하였다.