• Bulletin of the Korean Chemical Society
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• 제34권6호
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• pp.1875-1878
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• 2013

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.292-294
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• 2008

We have developed new reflective LCD for Mixed twist nematic LC mode with high quality image. We have found out an optimal twist angle of LC and optical film's axis by simulation. Also we measured electro-optic characteristics for new design panel. As a result, high reflectance and wide viewing angle characteristics were achieved.

• 한국결정성장학회지
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• 제25권5호
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• pp.173-181
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• 2015

A stoichiometric mixture of evaporating materials for $BaIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $6.13{\times}10^{17}cm^{-3}$ and $222cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.0581eV-(3.9511{\times}10^{-3}eV/K)T^2/(T+536K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2S_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2S_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{24}$-exciton peaks for n = 24.

• 대한화학회지
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• 제26권3호
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• pp.188-193
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• 1982

새로운 혼성 폴리에스테르 4가지를 합성하여 액정성을 DSC 및 편광 현미경을 사용하여 조사, 연구하였다. 세가지 혼성 폴리에스테르는 같은 메소젠 단위를 갖고 있으나 폴리메틸렌 유연 격자중 메틸렌기 수가 기수-우수, 기수-기수 및 우수-우수의 조합으로 되어 있는점이 다르며, 또 하나의 혼성 폴리에스테르는 양단에 p-옥시벤조일기가 결합하고 있는 메틸-및 브로모히드로 퀴논 단위가 데카메틸렌 격자에 결합하고 있는 구조를 갖고 있다. 이들 폴리에스테르는 모두 녹는점 및 그 이상의 온도에서 네마틱 액정상을 형성함을 알았으며 네마틱${\to}$등방성 액체간의 상변환이 가역적으로 일어남을 DSC 및 현미경으로 관찰할 수 있었다. 액정${\to}$등방성액체의 상변환에 수반되는 열역학적 성질을 중합체의 구조와 관련시켜 고찰하였다.

• 대한금속재료학회지
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• 제46권2호
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• pp.69-79
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• 2008

A composition consisting of 10 nm-Ni/1 nm-Pd/(30 nm or 70 nm-poly)Si was thermally annealed using rapid thermal for 40 seconds at $300{\sim}1100^{\circ}C$ to improve the thermal stability of conventional nickel monosilicide. The annealed bilayer structure developed into $Ni(Pd)Si_x$, and the resulting changes in sheet resistance, microstructure, phase, chemical composition, and surface roughness were investigated. The silicide, which formed on single crystal silicon, could defer the transformation of $NiSi_2$, and was stable at temperatures up to $1100^{\circ}C$. It remained unchanged on polysilicon substrate compared with the sheet resistance of conventional nickel silicide. The silicides annealed at $700^{\circ}C$, formed on single crystal silicon and 30 nm polysilicon substrates exhibited 30 nm-thick uniform silicide layers. However, silicide annealed at $1,000^{\circ}C$ showed preferred and agglomerated phase. The high resistance was due to the agglomerated and mixed microstructures. Through X-ray diffraction analysis, the silicide formed on single crystal silicon and 30 nm polysilicon substrate, showed NiSi phase on the entire temperature range and mixed phases of NiSi and $NiSi_2$ on 70 nm polysilicon substrate. Through scanning probe microscope (SPM) analysis, we confirmed that the surface roughness increased abruptly until 36 nm on 30 nm polysilicon substrate while not changed on single crystal and 70 nm polysilicon substrates. The Pd-inserted nickel monosilicide could maintain low resistance in a wide temperature range and is considered suitable for nano-thick silicide processing.

• 한국건설순환자원학회논문집
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• 제8권4호
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• pp.475-482
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• 2020

본 연구에서는 결정성장형 자기치유 고상캡슐의 코어조성비에 따라 3수준의 고상캡슐을 제조하였으며, 결정성장형 자기치유 고상캡슐을 혼합하여 시멘트 모르타르를 제조하였다. 제조된 고상캡슐은 시멘트 질량의 3%와 혼합하여 시멘트 모르타르의 균열 유도 재령에 따른 치유 특성을 평가하였다. 결정성장형 자기치유 고상캡슐을 혼합한 시멘트 모르타르의 균열 유도 재령에 따른 균열치유 특성을 평가한 결과, 7일 재령 동안 반응하지 않은 수화물질이 남아있기 때문에 고상캡슐과 혼합된 시멘트 모르타르의 자기치유 성능은 28일 재령 대비 7일 재령이 증가한 것으로 나타났다.

• 대한기계학회논문집B
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• 제20권7호
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• pp.2397-2408
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• 1996

A numerical study was made of the control of transient oscillatory flow modes in Czochralski convection. The reduction of temperature oscillation was achieved by changing the rotation rate of crystal rod, .OMEGA.$_{S}$=.OMEG $A_{S0}$(1+ $A_{S}$sin(2.pi. $f_{S}$/ $t_{p}$t)). The temporal behavior of oscillation flow was scrutinized over broad ranges of two parameters, i.e., the rotation amplitude( $A_{S}$.leq.0.5) and the nondimensional frequency (0.9.leq. $f_{S}$.leq.1.5). The mixed convection parameter was ranged 0.225.leq.Ra/PrR $e^{2}$.leq.0.929, which encompassed the buoyancy-and forced-dominant convection regimes. Computational results revealed that the temperature oscillations could be reduced effectively by a proper adjustment of the control parameters. The uniformity of temperature distribution near the crystal rod was examined. The control of oscillatory flow modes was also made for a realistic, low value of Pr.

• 한국결정성장학회지
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• 제16권1호
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• pp.8-11
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• 2006

The magnetic properties and crystal structures of $Sm_yGd_{2-y}Fe_{17-x}Si_x$ alloys ($0\leq\;x\leq2\;and\;y=0\~1.67$) have been investigated using x-ray diffraction and magnetic measurements. The $Sm_yGd_{2-y}Fe_{17-x}Si_x$ specimens were crystallized to the rhombohedral $Th_2Zn_{17}-structure$ with less than $5mol\%$ of impurities. The unit cells of the mixed rare-earth samples are smaller than those of $Sm_2Fe_{17}\;and\;Gd_2Fe_{17}.$ For example, the $T_c\;of\;SmGdFe_{17}\;(255^{\circ}C)$ is approximately 160 and $800^{\circ}C)$ higher than that of $Sm_2Fe_{17}\;and\;Gd_2Fe_{17},$ respectively. The $T_cs$ measured for $Sm_yGd_{2-y}Fe_{17-x}Si_x$ samples, 280 to $290^{\circ}C)$, are among the highest values observed for a $R_2Fe_{17-x}M_x$ intermetallic where M is a substituent other than cobalt.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.263-266
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• 2004

The stochiometric mix of evaporating materials for the $ZnGa_2Se_4$ single crystal thin films were prepared from horizental furnace. The polycrystal structure obtaind from the power x-ray diffraction was defect chalcopyrite. The lattice costants $a_0\;and\;c_0\;were\;a_0=5.51\;A,\;c_0=10.98\;A$. To obtains the single crystal thin films, $ZnGa_2Se_4$ mixed crystal were deposited on throughly etched Si(100) by the Hot Wall Epitaxy (HWE) system. The temperates of the source and the substrate were $590^{\circ}C\;and\;450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to dark current(pc/dc), maximum allowable rower dissipation(MAPD), spectral response and response time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.129-130
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• 2006

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. After the as-grown $CdIn_2S_4$ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of $CdIn_2S_4$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{cd}$, $V_s$, $Cd_{int}$, and $S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment m the S-atmosphere converted $CdIn_2S_4$ single crystal thin films to an optical p-type. Also. we confirmed that In in $CdIn_2S_4$/GaAs did not form the native defects because In in $CdIn_2S_4$ single crystal thin films existed in the form of stable bonds.