• 한국건설순환자원학회논문집
• /
• 제8권1호
• /
• pp.120-128
• /
• 2020

본 연구에서는 모르타르와 직접 혼합 가능한 결정성장형 무기재료 활용 고상 캡슐을 제조하였으며, 결정성장형 무기재료 조성비에 따라 3수준의 고상 캡슐을 제조하였다. 제조된 고상 캡슐은 시멘트 질량에 3% 혼합하여 모르타르의 품질 및 균열 치유 특성을 평가하였다. 고상 캡슐을 혼합한 모르타르의 테이블 플로우 및 공기량 평가결과 고상 캡슐의 혼합에 관계없이 테이블 플로우 및 공기량에 미치는 영향은 없는 것으로 나타났다. 고상 캡슐을 혼합한 모르타르의 water flow test 및 crack closing test에 따른 균열 치유특성 평가결과 초기 투수량이 감소하는 결과가 나타났으며, 시간 경과에 따라 반응생성물 발생하여 균열이 치유되는 것을 확인할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
• /
• pp.239-242
• /
• 2004

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$ respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on $CdIn_2S_4$ single crystal thin films was found to be $E_g(T)\;=\;2.7116\;eV\;-\;(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. After the as-grown $CdIn_2S_4$ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of $CdIn_2S_4$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
• /
• pp.136-137
• /
• 2006

The stochiometric mix of evaporating materials for the $ZnGa_2Se_4$ single crystal thin films were prepared from horizental furnace. To obtains the single crystal thin films, $ZnGa_2Se_4$ mixed crystal were deposited on throughly etched Si(100) by the Hot Wall Epitaxy (HWE) system. The temperates of the source and the substrate were $590^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature.

• 한국결정성장학회지
• /
• 제10권6호
• /
• pp.378-380
• /
• 2000

The epitaxial $BaTiO_{3}$ thin film was prepared on the MgO substrate by the coating-pyrolysis process using a mixed solution of Ba-naphthenate and Ti-naphthenate. The crystal structure of the epitaxial $BaTiO_{3}$ thin film was characterized by XRD ${\theta}/2{\theta}$ scan and asymmetric {303} rocking curve scan. The epitaxial $BaTiO_{3}$ thin film had the cubic phase with the lattice parameter of a = c = 0.4018 nm.

• 한국결정학회지
• /
• 제11권3호
• /
• pp.137-146
• /
• 2000

The stoichiometric mix of evaporating materials for he CuInS₂ single crystal thin films was prepared. To obtain the single crystal thin films, CuINS₂ mixed crystal was deposited on etched semi-insulator GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperature were 640℃ and 430℃, respectively and the thickness of the single crystal thin films was 2 ㎛. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility deduced from Hall data are 9.64x10/sup 22//㎥ and 2.95x10/sup -2/ ㎡/V·s, respectively at 293 K. he optical energy gap was found to be 1.53 eV at room temperature. From the photocurrent spectrum obtained by illuminating perpendicular light on the c-axis of the thin film, we have found that the values of spin orbit coupling splitting ΔSo and the crystal field splitting ΔCr were 0.0211 eV and 0.0045 eV at 10K, respectively. From PL peaks measured at 10K, were can assign the 807.7 nm (1.5350 eV) peak to E/sub x/ peak of the free exciton emission, the 810.3 nm(1.5301 eV) peak to I₂ peak of donar-bound exciton emission and the 815.6 nm(1.5201 eV) peak to I₁ peak of acceptor-bound excition emission. In addition, the peak observed at 862.0 nm(1.4383 eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.81-82
• /
• 2007

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C\;and\;420^{\circ}C$, respectively. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd},\;V_{Se},\;Cd_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4$/GaAs did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
• /
• pp.156-159
• /
• 2003

The stochiometric mixture of evaporating materials for the $CuInTe_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CuInTe_2$ mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were $610^{\circ}C\;and\;450^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about $0.5{\mu}m/h$. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). From the photocurrent spectra, we have found that values of spin orbit coupling ${\Delta}So$ and crystal field splitting ${\Delta}Cr$ ware $0.283{\underline{3}}eV\;and\;0.120{\underline{0}}eV$, respectively.

• 한국결정성장학회지
• /
• 제32권5호
• /
• pp.212-217
• /
• 2022

고온의 탄화규소 단결정성장공정에서는 탄화규소-흑연간의 열팽창계수의 차이로 인한 열응력이 크게 발생할 수 있어 흑연부재로부터 탄화규소 종자정이 분리되어 성장 중에 종자정이 떨어지는 문제가 발생할 수 있다. 그러나 이러한 탄화규소 종자정 모듈의 접합특성에 대한 연구는 현재까지 거의 보고된 바가 없다. 본 연구에서는 탄화규소-흑연 간의 접합특성을 평가하기 위해 3점 굽힘시험법을 응용한 복합모드꺾임시험(Mixed-Mode Flexure Test)을 통해 탄화규소-흑연을 서로 다른 접합제를 적용하여 접합한 시편의 접합 특성을 확인하고, 흑연 접착제의 미세구조를 분석하기 위해 라만분광법(Raman spectroscopy), X선 광전자분광법(X-ray Photoelectron Spectroscopy) 및 X선 전산화 단층촬영법(X-ray Computed Tomography)을 활용하였다. 이러한 일련의 과정을 통하여 선별한 접착성이 우수한 접착제를 적용하여 직경 50 mm급의 탄화규소 종자결정모듈을 제작하고, 이를 적용하여 고온의 상부종자용액성장 공정을 이용하여 공정 중 종자정의 탈락없이 성공적으로 직경 50 mm급의 탄화규소 단결정을 성장시켰다.

• 한국결정성장학회지
• /
• 제11권6호
• /
• pp.274-284
• /
• 2001

A stoichimetric mixture of evaporating materials for $AgInS_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $AgInS_2$mixed crystal was deposited on thorughly etched semi-insulating GaAs(100) substrate by the Hot wall Epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $AgInS_2$ single crystal the films measured from Hall effect by van der Pauw method are $9.35\times 10^{16}/\terxtm{cm}^3$ and $294\terxtm{cm}^2$/V.s at 293 K, respectively. From the optical absorption measurement the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin film was found to be $E_g$(T)= 2.1365eV-($9.89\times 10^{-3}eV/T^2$/(2930+T). After the as-grown $AgInS_2$ single crystal thin films was annealed in $Ag^-S^-$ and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal the films has been investigated by using the photoluminescence(PL) at 10K. The native defects of $V_{Ag},V_s, Ag_{int}$ and $S_{int}$ int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $AgInS_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in $AgInS_2$ /GaAs did not form the native defects because In is $AgInS_2$ single crystal thin films did exist in the form of stable bonds.

• 한국세라믹학회지
• /
• 제34권2호
• /
• pp.195-201
• /
• 1997

본 논문은 kaolinite(Al2O3.2SiO2.2H2O)-aluminum trihydroxide(Al(OH3) 혼합물을 소결전에 planetary ball mill을 사용하여 건식 중에서 혼합분쇄한 후, 이 혼합물을 사용하여 소결하는 동안에 mullite의 생성거동을 연구한 것이다. 혼합물의 입자크기 감소는 분쇄 초기에 현저하였으며, 분쇄기간이 증가함에 따라 미립자들이 응집하는 현상을 보였다. 혼합물의 결정구조는 planetary ball milling에 의한 혼합분쇄에 따라 쉽게 비정질화되었으며, 비정질화되는 정도는 분쇄시간이 증가함에 따라 증가하였다. Kaolinite의 초기 분순물로 존재했던 anatase를 제외한 mullite상만이 상대적으로 낮은 소결온도인 1523K에서 혼합분쇄한 혼합물의 소결체에서 나타났다. 한편, 분쇄하지 않은 혼합물의 소결체의 경우는 이 온도에서 mullite 상 이외에 corundum, cristobalite, Al-Si spinel상이 공존하는 형태로 나타났다. 따라서, 혼합분쇄처리는 출발원료의 미소 규모에 있어서 균일혼합 및 분산을 촉진시키며, 또한 결정구조변화에 따른 열분해온도의 변화일으켜, 상대적으로 낮은 온도에서 고순도의 mullite를 직접 생성하는데 효과적이였다.