• Title/Summary/Keyword: miniaturization

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Microwave Dielectric Properties of Ca[(Li1/3Nb2/3)0.2Ti0.8]O3-δ Ceramics with Addition of Zn-B-O Glass Systems (Zn-B-O 글라스 첨가에 의한 Ca[(Li1/3Nb2/3)0.2Ti0.8]O3-δ 세라믹스의 마이크로파 유전특성)

  • In, Chi-Seung;Kim, Shi Yeon;Yeo, Dong-Hun;Shin, Hyo-Soon;Nahm, Sahn
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.12
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    • pp.781-785
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    • 2016
  • With trend of the miniaturization and the high-functionalizing of mobile communication system, low-loss microwave dielectric materials are widely used for high frequency communication components. These dielectric materials should be co-sintered with highly electric-conducting metal such as silver or copper for high-frequency and thick film process application. Sintering temperature of $Ca(Li_{1/3}Nd_{2/3})_{0.2}Ti_{0.8}]O_{3-{\delta}}$, which has excellent dielectric properties such as ${\varepsilon}_r$ above 40, quality factor ($Q{\cdot}f_0$) above 16,000 GHz, and TCF (temperature coefficient of resonant frequency) of $-20{\sim}-10ppm/^{\circ}C$, is reported as high as $1,175^{\circ}C$, so it could not be co-sintered with silver or copper. Therefore in this study, low-temperature melting glasses of Zn-B-O and Zn-B-Si-O systems were added to $Ca[(Li_{1/3}Nb_{2/3})_{0.8}Ti_{0.2}]O_{3-{\delta}}$ to lower its sintering temperature under $900^{\circ}C$ without losing excellency of dielectric properties. With 15 weight % of Zn-B-Si-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.11g/cm^3$, ${\varepsilon}_r$ of 40.1, $Q{\cdot}f_0$ of 4,869 GHz, and TCF of $-5.9ppm/^{\circ}C$. With 15 weight % of Zn-B-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.14g/cm^3$, ${\varepsilon}_r$ of 40.4, $Q{\cdot}f_0$ of 7,059 GHz, and TCF of $-0.92ppm/^{\circ}C$.

Virtual Location Information based Routing Scheme in Wireless Ad-Hoc Networks (무선 애드 혹 네트워크에서 가상위치정보 기반 라우팅 기법)

  • Youn, JooSang
    • Journal of the Korea Society of Computer and Information
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    • v.18 no.2
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    • pp.77-85
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    • 2013
  • Recently, location information based routing protocol has been studied to estimate end-to-end path in wireless ad-hoc network. This protocol assumes all nodes can get heir location information via GPS devices and floods only limited area with routing message through acquired location information. Therefore, this protocol has advantage that can reduce the number of routing message than the existing IP-based routing protocols. In addition, all nodes enabling this protocol must acquire their own location information to participate in the location-based routing. However, recent because of the miniaturization of sensor node, sensor node without GPS function has been launched. Therefore in case of the sensor node that does not know location information, it is impossible to participate in the ad hoc network configuration and location information based routing. In this paper, a virtual location information based routing scheme is proposed for wireless nodes without GPS function to be able to participate in location information based routing within ad hoc network environments consisting of wireless nodes with GPS function and wireless nodes without GPS function. Therefore, the proposed protocol has the advantage that a wireless node without a GPS function is able to participate in ad hoc network configuration and the location information based routing.

Research Trend of Soft Magnetic Composite Materials with High Energy Efficiency (고에너지효율 연자성 복합 분말 소재의 연구개발 동향)

  • Kim, Hwi-Jun
    • Journal of the Korean Magnetics Society
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    • v.21 no.2
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    • pp.77-82
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    • 2011
  • The use of soft magnetic materials have been increasing in the various industrial fields according to the increasing demand for high performance, automatic, miniaturing equipments in the recent our life. In this study, we investigated the effect of factors on the core loss and magnetic properties of electrical steel and soft magnetic composites. Furthermore, we reviewed the major efforts to reduce the core loss and improve the soft magnetic properties in the two main soft magnetic materials. Domain purification which results from reduced density of defects in cleaner electrical steels is combined with large grains to reduce hysteresis loss. The reduced thickness and the high electrical conductivity reduce the eddy current component of loss. Furthermore, the coating applied to the surface of electrical steel and texture control lead to improve high permeability and low core loss. There is an increasing interest in soft magnetic composite materials because of the demand for miniaturization of cores for power electronic applications. The SMC materials have a broad range of potential applications due to the possibility of true 3-D electromagnetic design and higher frequency operation. Grain size, sintering temperature, and the degree of porosity need to be carefully controlled in order to optimize structure-sensitive properties such as maximum permeability and low coercive force. The insulating coating on the powder particles in SMCs eliminates particle-to-particle eddy current paths hence minimizing eddy current losses, but it reduces the permeability and to a small extent the saturation magnetization. The combination of new chemical composition with optimum powder manufacturing processes will be able to result in improving the magnetic properties in soft magnetic composite materials, too.

Characteristics and Physical Property of Tungsten(W) Related Diffusion Barrier Added Impurities (불순물을 주입한 텅스텐(W) 박막의 확산방지 특성과 박막의 물성 특성연구)

  • Kim, Soo-In;Lee, Chang-Woo
    • Journal of the Korean Vacuum Society
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    • v.17 no.6
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    • pp.518-522
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    • 2008
  • The miniaturization of device size and multilevel interlayers have been developed by ULSI circuit devices. These submicron processes cause serious problems in conventional metallization due to the solubility of silicon and metal at the interface, such as an increasing contact resistance in the contact hole and interdiffusion between metal and silicon. Therefore it is necessary to implement a barrier layer between Si and metal. Thus, the size of multilevel interconnection of ULSI devices is critical metallization schemes, and it is necessary reduce the RC time delay for device speed performance. So it is tendency to study the Cu metallization for interconnect of semiconductor processes. However, at the submicron process the interaction between Si and Cu is so strong and detrimental to the electrical performance of Si even at temperatures below $200^{\circ}C$. Thus, we suggest the tungsten-carbon-nitrogen (W-C-N) thin film for Cu diffusion barrier characterized by nano scale indentation system. Nano-indentation system was proposed as an in-situ and nanometer-order local stress analysis technique.

Simulation of Energy Resolution of Time of Flight System for Measuring Positron-annihilation induced Auger Electrons (양전자 소멸 Auger 전자 에너지 측정을 위한 Time of Flight의 분해도 향상에 관한 이론적 연구)

  • Kim, J.H.;Yang, T.K.;Lee, C.Y.;Lee, B.C.
    • Journal of the Korean Vacuum Society
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    • v.17 no.4
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    • pp.311-316
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    • 2008
  • Since the presence of the chemical impurities and defect at surfaces and interfaces greatly influence the properties of various semiconductor devices, an unambiguous chemical characterization of the metal and semiconductor surfaces become more important in the view of the miniaturization of the devices toward nano scale. Among the various conventional surface characterization tools, Electron-induced Auger Electron Spectroscopy (EAES), X-ray Photoelectron Spectroscopy (XPS) and Secondary Electron Ion Mass Spectroscopy (SIMS) are being used for the identification of the surface chemical impurities. Recently, a novel surface characterizaion technique, Positron-annihilation induced Auger Electron Spectroscopy (PAES) is introduced to provide a unique method for the analysis of the elemental composition of the top-most atomic layer. In PAES, monoenergetic positron of a few eV are implanted to the surface under study and these positrons become thermalized near the surface. A fraction of the thermalized positron trapped at the surface state annihilate with the neighboring core-level electrons, creating core-hole excitations, which initiate the Auger process with the emission of Auger electrons almost simultaneously with the emission of annihilating gamma-rays. The energy of electrons is generally determined by employing ExB energy selector, which shows a poor resolution of $6{\sim}10eV$. In this paper, time-of-flight system is employed to measure the electrons energy with an enhanced energy resolution. The experimental result is compared with simulation results in the case of both linear (with retarding tube) and reflected TOF systems.

Step-down Piezoelectric Transformer Using PZT PMNS Ceramics

  • Lim Kee-Joe;Park Seong-Hee;Kwon Oh-Deok;Kang Seong-Hwa
    • KIEE International Transactions on Electrophysics and Applications
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    • v.5C no.3
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    • pp.102-110
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    • 2005
  • Piezoelectric transformers(PT) are expected to be small, thin and highly efficient, and which are attractive as a transformer with high power density for step down voltage. For these reasons, we have attempted to develop a step-down PT for the miniaturized adaptor. We propose a PT, operating in thickness extensional vibration mode for step-down voltage. This PT consists of a multi-layered construction in the thickness direction. In order to develop the step-down PT of 10 W class and turn ratio of 0.1 with high efficiency and miniaturization, the piezoelectric ceramics and PT designs are estimated with a variety of characteristics. The basic composition of piezoelectric ceramics consists of ternary yPb(Zr$_{x}$Ti$_{1-x}$)O$_{3}$-(1-y)Pb(Mn$_{1/3}$Nb1$_{1/3}$Sb$_{1/3}$)O$_{3}$. In the piezoelectric characteristics evaluations, at y=0.95 and x=0.505, the electromechanical coupling factor(K$_{p}$) is 58$\%$, piezoelectric strain constant(d$_{33}$) is 270 pC/N, mechanical quality factor(Qr$_{m}$) is 1520, permittivity($\varepsilon$/ 0) is 1500, and Curie temperature is 350 $^{\circ}C$. At y = 0.90 and x = 0.500, kp is 56$\%$, d33 is 250 pC/N, Q$_{m}$ is 1820, $\varepsilon$$_{33}$$^{T}$/$\varepsilon$$_{0}$ is 1120, and Curie temperature is 290 $^{\circ}C$. It shows the excellent properties at morphotropic phase boundary regions. PZT-PMNS ceramic may be available for high power piezoelectric devices such as PTs. The design of step-down PTs for adaptor proposes a multi-layer structure to overcome some structural defects of conventional PTs. In order to design PTs and analyze their performances, the finite element analysis and equivalent circuit analysis method are applied. The maximum peak of gain G as a first mode for thickness extensional vibration occurs near 0.85 MHz at load resistance of 10 .The peak of second mode at 1.7 MHz is 0.12 and the efficiency is 92$\%$.

Design of a Ultra Miniaturized Voltage Tuned Oscillator Using LTCC Artificial Dielectric Reson (LTCC 의사 유전체 공진기를 이용한 초소형 전압제어발진기 설계)

  • Heo, Yun-Seong;Oh, Hyun-Seok;Jeong, Hae-Chang;Yeom, Kyung-Whan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.5
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    • pp.613-623
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    • 2012
  • In this paper, we present an ultra miniaturized voltage tuned oscillator, with HMIC-type amplifier and phase shifter, using LTCC artificial dielectric resonator. ADR which consists of periodic conductor patterns and stacked layers has a smaller size than a dielectric resonator. The design specification of ADR is obtained from the design goal of oscillator. The structure of the ADR with a stacked circular disk type is chosen. The resonance characteristic, physical dimension and stack number are analyzed. For miniaturization of ADRO, the ADR is internally implemented at the upper part of the LTCC substrate and the other circuits, which are amplifier and phase shifter are integrated at the bottom side respectively. The fabricated ADRO has ultra small size of $13{\times}13{\times}3mm^3$ and is a SMT type. The designed ADRO satisfies the open-loop oscillation condition at the design frequency. As a results, the oscillation frequency range is 2.025~2.108 GHz at a tuning voltage of 0~5 V. The phase noise is $-109{\pm}4$ dBc/Hz at 100 kHz offset frequency and the power is $6.8{\pm}0.2$ dBm. The power frequency tuning normalized figure of merit is -30.88 dB.

Numerical Analysis of Warpage and Stress for 4-layer Stacked FBGA Package (4개의 칩이 적층된 FBGA 패키지의 휨 현상 및 응력 특성에 관한 연구)

  • Kim, Kyoung-Ho;Lee, Hyouk;Jeong, Jin-Wook;Kim, Ju-Hyung;Choa, Sung-Hoon
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.2
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    • pp.7-15
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    • 2012
  • Semiconductor packages are increasingly moving toward miniaturization, lighter and multi-functions for mobile application, which requires highly integrated multi-stack package. To meet the industrial demand, the package and silicon chip become thinner, and ultra-thin packages will show serious reliability problems such as warpage, crack and other failures. These problems are mainly caused by the mismatch of various package materials and geometric dimensions. In this study we perform the numerical analysis of the warpage deformation and thermal stress of 4-layer stacked FBGA package after EMC molding and reflow process, respectively. After EMC molding and reflow process, the package exhibits the different warpage characteristics due to the temperature-dependent material properties. Key material properties which affect the warpage of package are investigated such as the elastic moduli and CTEs of EMC and PCB. It is found that CTE of EMC material is the dominant factor which controls the warpage. The results of RSM optimization of the material properties demonstrate that warpage can be reduced by $28{\mu}m$. As the silicon die becomes thinner, the maximum stress of each die is increased. In particular, the stress of the top die is substantially increased at the outer edge of the die. This stress concentration will lead to the failure of the package. Therefore, proper selection of package material and structural design are essential for the ultra-thin die packages.

A Design of Wireless Sensor Node Using Embedded System (임베디드 시스템을 활용한 무선 센서 노드설계)

  • Cha, Jin-Man;Lee, Young-Ra;Park, Yeon-Sik
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.13 no.3
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    • pp.623-628
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    • 2009
  • The emergence of compact and low-power wireless communication sensors and actuators in the technology supporting the ongoing miniaturization of processing and storage allows for entirely the new kinds of embedded systems. These systems are distributed and deployed in environments where they may have been designed into a particular control method, and are often very dynamic. Collection of devices can communicate to achieve a higher level of coordinated behavior. Wireless sensor nodes deposited in various places provide light, temperature, and activity measurements. Wireless sensor nodes attached to circuits or appliances sense the current or control the usage. Together they form a dynamic and multi-hop routing network connecting each node to more powerful networks and processing resources. Wireless sensor networks are a specific-application and therefore they have to involve both software and hardware. They also use protocols that relate to both applications and the wireless network. Wireless sensor networks are consumer devices supporting multimedia applications such as personal digital assistants, network computers, and mobile communication devices. Wireless sensor networks are becoming an important part of industrial and military applications. The characteristics of modem embedded systems are the capable of communicating adapting the different operating environments. In this paper, We designed and implemented sensor network system which shows through host PC sensing temperature and humidity data transmitted for wireless sensor nodes composed wireless temperature and humidity sensor and designs sensor nodes using embedded system with the intention of studying USN.

Reduced Electrical Coupling Effect and Miniaturized Antenna Using Quasi Möbius Strip with Via-Hole (Quasi Möbius Strip과 Via-Hole 구조를 응용한 선로결합 현상의 완화 및 소형화 설계)

  • Kim, Mi Jung;Park, Seong Gyoon;Ro, Soong Hwan
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.38B no.9
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    • pp.715-721
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    • 2013
  • Minimization techniques are adaptations of Helical structure, Meta material, multi-layer structure etc. But, Helical structure is not suited to minimization technique of RF circuit having single resonant frequency. Because it generate resonant frequency following as rotation of circumference. Meta material and multi layer structure have weakness of expenditure and complex structure. In addition, conventional three dimensional M$\ddot{o}$bius Strip and planar M$\ddot{o}$bius Strip are not two dimensional planar M$\ddot{o}$bius Strip that has weakness of electrical coupling effect. Therefore, in this paper, we proposed miniaturized and reduced electrical coupling effect antenna by adaptation of Quasi M$\ddot{o}$bius Strip that topology is same as three dimensional M$\ddot{o}$bius Strip with Via-Hole structure. According to the simulation result, physical circumferential length is 1/3 minimized compared with conventional ring antenna under the same resonant frequency. In addition, coupling effect is not nearly generates near to the resonant frequency, 2.4GHz.