• Economic and Environmental Geology
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• v.45 no.5
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• pp.525-533
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• 2012

Snowmelt from seasonal snow covers can be significant in many environments of northern and alpine areas. Water flow and chemical transport resulting from snowmelt have been studied for an understanding of contributions to watersheds or catchments. A Mobile-Immobile water Model (MIM) was developed to describe the movement of ionic tracers through a snowpack by Lee et al. (2008a) and Lee et al. (2008b). To validate the model used in the studies, mass balance calculations of the model were conducted and comparisons were made between model results and analytical solutions in this work. Mass balance was calculated based on the fact that change in total mass within a snowpack with time is equal to sum of any change in the flux of water or ionic tracers into and out of the snowpack. Calculations of both water and ionic mass show almost perfect agreement between changes of two water and solute mass fluxes. Comparisons between model results and analytical solutions including wave velocity and effective saturation show almost perfect agreement.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.10
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• pp.3917-3922
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• 2010

In this paper, 3 stage amplifier MMIC was designed and fabricated with U-band optimized epitaxal pHEMT that produced by large signal characterization and modeling for 60 GHz band. The pHEMT used in this paper, the gate $0.12\;{\mu}m$ length and total gate width of $100\;{\mu}m$, $200\;{\mu}m$ has been modeled using the large signal designed with negative feedback and MCLF instead of MIM capacitor for improving stability. Fabricated MMIC $2.5{\times}1.5mm^2$ size, current about 40 mA, operating frequency 59.5~60.5 GHz, gain 19.9~18.6 dB, input matching characteristics -14.6~-14.7 dB, output matching characteristics -11.9~-16.3 dB and output -5 dBm characteristics were obtained.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.596-600
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• 1998

Reaction bonded $AI_2O_3$(RBAO)-SiC ceramics were prepared from the Al/$AI_2O_3$/SiC powder mixture. The calcined alumina and fused alumina were used as the raw $AI_2O_3$ powder. The same sized (3mm) and differently sized (3mm + Smm) $Zr0_2$ balls were used in attrition milling of starting powders. The effect of $AI_2O_3$ powder shapes on the milling efficiency and reaction sintering was investigated. After attrition milling, isopressed compacts were preheated to 1l00$^{\circ}$C with a heating rate l.5$^{\circ}C$/min and then sintered at the temperature range 1500 to 1$600^{\circ}C$ for S hours with a heating rate 5$^{\circ}C$/min. The powder mixture with fused alumina was effectively comminuted than the mixtures with calcined alumina. And the same sized balls milled more effctive than the differently sized balls. The reaction sintering behavior differed not depending on the shapes of $AI_2O_3$ powder.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.1
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• pp.24-32
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• 2002

This paper is concerned with the fault diagnosis for stuck-at faults of a multistage interconnection network(MIM) which is a kind of interconnection networks in multicomputer systems. Up to the present, a fault diagnosis scheme has dealt with a fault model of all types, which results in complicated algorithms. In the literature, it is shown that a number of steps and computation are required for the fault detection and isolation algorithms for a class of MINs. In this paper, we propose a simple and easily implementable algorithm for the detection and isolation of the stuck-at fault in MIM. specifically, we develope an at algorithm for the isolation of the source fault in switching elements whenever tile stuck-at fault is detected in MINs. After all, the proposed algorithm is illustrated by an example of 16$\times$16 baseline networks of MINs.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.10 s.101
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• pp.989-994
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• 2005

A MMIC(Monolithic Microwave Integrated Circuit) switch chip using InGaAs/GaAs p-HEMT process has been designed for MSM(Microwave Switch Matrix) of satellite communication system. An absorptive type MMIC switch is adopted for good reflection coefficients performances of input and output ports at both on and off states. And, a quarter wavelength impedance transformer is realized with lumped elements of MIM capacitor and spiral inductor for 3 GHz band to reduce the chip size. This MMIC switch covers the frequency range of $3.2\~3.6\;GHz$. According to the on-wafer measurement, the fabricated MMIC switch with miniature size of $1.6\;mm{\times}1.3\;mm$ demonstrates insertion loss below 2 dB and isolation above 56.8 dB, and the performance coincides with simulation results.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.22 no.2
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• pp.248-255
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• 2013

The objective of this study is to optimize the Metal Injection Molding(MIM) process with design of experiments(DOE) and numerical analysis. To derive the optimal process condition, experiment or numerical analysis was performed under various process conditions. To analyze the interaction among influential factors contributing to the temperature at flow front and response surface in MIM, both central point and axial point were added to the full factorial design with 2 levels and 5 factors and then their impacts on response variable in 43 experimental conditions were analyzed and the significance was evaluated. As a result, sprue, runner, and gate were completely filled in about 0.247 seconds after injection, the front part of the green body was filled in about 0.3344 seconds, the green body except gate, etc changed to almost solid state in about 3.29 seconds, the Packinging pressure was completed in about 6.29 seconds, and the green body inside and outside and sprue, etc became solid in 13.2 seconds. The impact of individual or reciprocal action of factors on the temperature at flow front was analyzed through regular probability, test statistics, main effect, and interaction effect. As a result, of a total of 31 combinations of factors, 9 unit factors and reciprocal actions were significant, and the screening was also possible. A proper regression equation was drawn with regression analysis and response surface design on the response variable of temperature at flow front, and the applicability could be verified.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.11 no.6
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• pp.9-14
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• 2011

We have investigated the electrical properties of $AlO_x$ thin film device. The device has been fabricated top-bottom electrode structure and its transport properties are measured in order to study the resistance change. Electrical properties with linear voltage sweep on a electrodes are used to show the variation of resistance of $AlO_x$ thin film device. Fabricated $AlO_x$ thin film device with MIM structure is changed from a high conductive On-state to a low conductive Off-state by the external linear voltage sweep. It is found that the initial resistance of the $AlO_x$ thin film is low-resistance On state and reversible switching occurs. Consequently, we believe $AlO_x$ thin film is a promising material for a next-generation nonvolatile memory and other electrical applications.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.359-363
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• 2005

The organic insulation devices with MIM (metal-insulator-metal) structures as PVP gate insulation films were prepared for the application of organic thin film transistors (OTFT). The co-polymer organic insulation films were synthesized by using PVP(poly-4-vinylphenol) as solute and PGMEA (propylene glycol monomethyl ether acetate) as solvent. The cross-linked PVP insulation films were also prepared by addition of poly (melamine-co-formaldehyde) as thermal hardener. The leakage current of the cross-linked PVP films was found to be about 300 pA with low current noise. and showed better property in electrical properties as compared with the co-polymer PVP insulation films. In addition, cross-linked PVP insulation films showed better surface morphology (roughness), showing about 0.11${\~}$0.18 nF in capacitance for all PVP film samples.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.9
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• pp.12-20
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• 2013

In this paper, a co-planar waveguide(CPW) fed zeroth-order resonant(ZOR) antenna with frequency reconfigurable radiating structures is fabricated and measured. The unit cell of proposed antenna consists of a series metal-insulator-metal(MIM) capacitor and two shunt line inductors which are shorted through the via. The proposed antenna is designed based on a composite right/left-handed(CRLH) transmission line with two unit cells and it has open ended structure in order to radiate electromagnetic energy mainly on the shunt arm. In order to reduce the antenna size and to exhibit a frequency reconfigurable ability using diode switches four straight strips bent by 90 degrees are used as shunt inductors. The total size of fabricated antenna is $0.22{\lambda}_0{\times}0.16{\lambda}_0$ at zeroth-order resonant(ZOR) frequency. The measured maximum gain and bandwidth (VSWR ${\leq}2$) are 3.1 dBi and 56MHz at ZOR frequency of 2.97 GHz, respectively. This type of antenna can be applied to a frequency reconfigurable antenna system with triple bands.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.278.1-278.1
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• 2014

Organic materials have been explored as the gate dielectric layers in thin film transistors (TFTs) of backplane devices for flexible display because of their inherent mechanical flexibility. However, those materials possess some disadvantages like low dielectric constant and thermal resistance, which might lead to high power consumption and instability. On the other hand, inorganic gate dielectrics show high dielectric constant despite their brittle property. In order to maintain advantages of both materials, it is essential to develop the alternative materials. In this work, we manufactured nanocomposite gate dielectrics composed of organic material and inorganic nanoparticle and integrated them into organic TFTs. For synthesis of nanocomposite gate dielectrics, polyimide (PI) was explored as the organic materials due to its superior thermal stability. Candidate nanoprticles (NPs) of halfnium oxide, titanium oxide and aluminium oxide were considered. In order to realize NP concentration dependent electrical characteristics, furthermore, we have synthesized the different types of nanocomposite gate dielectrics with varying ratio of each inorganic NPs. To analyze gate dielectric properties like the capacitance, metal-Insulator-metal (MIM) structures were prepared together with organic TFTs. The output and transfer characteristics of organic TFTs were monitored by using the semiconductor parameter analyzer (HP4145B), and capacitance and leakage current of MIM structures were measured by the LCR meter (B1500, Agilent). Effects of mechanical cyclic bending of 200,000 times and thermally heating at $400^{\circ}C$ for 1 hour were investigated to analyze mechanical and thermal stability of nanocomposite gate dielectrics. The results will be discussed in detail.