• Title/Summary/Keyword: millimeter-band

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A Study on Calculation of NFD and Protection Ratio of Fixed Radio Relay System for Analyzing Adjacent Channel Interference (인접 채널 간섭 분석을 위한 고정 무선 중계 시스템의 NFD 및 보호비 계산에 대한 연구)

  • Suh Kyoung-Whoan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.11 s.102
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    • pp.1138-1146
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    • 2005
  • This paper makes a study of a formulation of net filter discrimination(NFD) and its computation for analyzing adjacent channel interference and suggests a systematic algorithm for calculating protection ratios of co-channel and adjacent channel applicable to frequency coordination in the fixed radio relay networks. It is shown that adjacent channel protection ratio can be derived from two factors: One is NFD depending upon receiver filter characteristic as well as transmitter spectrum mask and the other is co-channel protection ratio given by a function of fade margin, modulation scheme, and allowable interference. Actually to show the computing procedure from transmitter spectrum mask and receiver filter characteristic, NFD has been obtained for channel bandwidth of 29.65 and 40 MHz at 6.2 and 6.7 GHz band, respectively. According to the results, NFDs at the first adjacent channel of 29.65 and 40 MHz provide 27.4 and 28.9 dB, respectively. From these data, adjacent channel protection ratios corresponding to each channel bandwidth yield 47.5 and 46.3 dB for a given 64-QAM and 60 km. The proposed method gives some merits of an easy calculation, systematic extension, and applying the same concept to frequency coordination in millimeter radio relay networks.

The Study on the Embedded Active Device for Ka-Band using the Component Embedding Process (부품 내장 공정을 이용한 5G용 내장형 능동소자에 관한 연구)

  • Jung, Jae-Woong;Park, Se-Hoon;Ryu, Jong-In
    • Journal of the Microelectronics and Packaging Society
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    • v.28 no.3
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    • pp.1-7
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    • 2021
  • In this paper, by embedding a bare-die chip-type drive amplifier into the PCB composed of ABF and FR-4, it implements an embedded active device that can be applied in 28 GHz band modules. The ABF has a dielectric constant of 3.2 and a dielectric loss of 0.016. The FR-4 where the drive amplifier is embedded has a dielectric constant of 3.5 and a dielectric loss of 0.02. The proposed embedded module is processed into two structures, and S-parameter properties are confirmed with measurements. The two process structures are an embedding structure of face-up and an embedding structure of face-down. The fabricated module is measured on a designed test board using Taconic's TLY-5A(dielectric constant : 2.17, dielectric loss : 0.0002). The PCB which embedded into the face-down expected better gain performance due to shorter interconnection-line from the RF pad of the Bear-die chip to the pattern of formed layer. But it is verified that the ground at the bottom of the bear-die chip is grounded Through via, resulting in an oscillation. On the other hand, the face-up structure has a stable gain characteristic of more than 10 dB from 25 GHz to 30 GHz, with a gain of 12.32 dB at the center frequency of 28 GHz. The output characteristics of module embedded into the face-up structure are measured using signal generator and spectrum analyzer. When the input power (Pin) of the signal generator was applied from -10 dBm to 20 dBm, the gain compression point (P1dB) of the embedded module was 20.38 dB. Ultimately, the bare-die chip used in this paper was verified through measurement that the oscillation is improved according to the grounding methods when embedding in a PCB. Thus, the module embedded into the face-up structure will be able to be properly used for communication modules in millimeter wave bands.

Study of Coherent High-Power Electromagnetic Wave Generation Based on Cherenkov Radiation Using Plasma Wakefield Accelerator with Relativistic Electron Beam in Vacuum (진공 내 상대론적인 영역의 전자빔을 이용한 플라즈마 항적장 가속기 기반 체렌코프 방사를 통한 결맞는 고출력 전자파 발생 기술 연구)

  • Min, Sun-Hong;Kwon, Ohjoon;Sattorov, Matlabjon;Baek, In-Keun;Kim, Seontae;Hong, Dongpyo;Jang, Jungmin;Bhattacharya, Ranajoy;Cho, Ilsung;Kim, Byungsu;Park, Chawon;Jung, Wongyun;Park, Seunghyuk;Park, Gun-Sik
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.6
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    • pp.407-410
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    • 2018
  • As the operating frequency of an electromagnetic wave increases, the maximum output and wavelength of the wave decreases, so that the size of the circuit cannot be reduced. As a result, the fabrication of a circuit with high power (of the order of or greater than kW range) and terahertz wave frequency band is limited, due to the problem of circuit size, to the order of ${\mu}m$ to mm. In order to overcome these limitations, we propose a source design technique for 0.1 THz~0.3 GW level with cylindrical shape (diameter ~2.4 cm). Modeling and computational simulations were performed to optimize the design of the high-power electromagnetic sources based on Cherenkov radiation generation technology using the principle of plasma wakefield acceleration with ponderomotive force and artificial dielectrics. An effective design guideline has been proposed to facilitate the fabrication of high-power terahertz wave vacuum devices of large diameter that are less restricted in circuit size through objective verification.