• Journal of electromagnetic engineering and science
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• v.16 no.4
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• pp.225-228
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• 2016

KRISS-V, a V-band millimeter-wave source module for a primary RF power standard and calibration system developed by the Korea Research Institute of Standards and Science is here presented. The output power of KRISS-V is several times higher than that of commercial amplifier/multiplier chains and is highly stable (the standard deviations of output power are less than 0.01% in the worst case). The spectral purity of KRISS-V is high enough to consider it a single-tone signal generator. We also added programmable attenuation capability to KRISS-V for remote power control. Moreover, the in-house source module is cost-effective and adaptable to various measurement schemes. The structure of the model as well as detailed component information are introduced so that it can be reproduced.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.12
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• pp.1700-1705
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• 2013

A second harmonic millimeter wave oscillator utilizing sub-harmonic injection-synchronization is presented. A 8.7GHz oscillator with MES-FET is designed, and is driven as a harmonic output oscillator at 17.4GHz by means of sub-harmonic injection-synchronization. The oscillator operates as a multiplier as well as a oscillator in this scheme. Adopting this method, a high sable, high frequency millimeter wave source is obtainable even though self-oscillating frequency of an oscillator is relatively low. The range of injection-synchronization is about 26MHz, and is proportional to the input sub-harmonic power. The spectrum analysis of the 2nd harmonic output frequency shows remarkably decreased the phase noise level.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.10 s.352
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• pp.90-97
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• 2006

We report our research work on the millimeter-wave broadband amplifier integrating the shunt peaking technology with the cascode configuration. The millimeter-wave broadband cascode amplifier on MIMIC technology was designed and fabricated using $0.1{\mu}m\;{\Gamma}-gate$ GaAs PHEMT, CPW, and passive library. The fabricated PHEMT has shown a transconductance of 346.3 mS/mm, a current gain cut off frequency ($f_T$) of 113 GHz, and a maximum oscillation frequency ($f_{max}$) of 180 GHz. To prevent oscillation of designed cascode amplifier, a parallel resistor and capacitor were connected to drain of common-gate device. For expansion of the bandwidth and flatness of the gain, we inserted the short stub into bias circuits and the compensation transmission line between common-source device and common-gate device, and then their lengths were optimized. Also, the input and output stages were designed using the matching method to obtain the broadband characteristic. From the measurement, we could confirm to extend bandwidth and flat gain by integrating the shunt peaking technology with the cascode configuration. The cascode amplifier shows the broadband characteristic from 19 GHz to 53.5 GHz. Also, the average gain of this amplifier is about 6.5 dB over the bandwidth.

• Journal of electromagnetic engineering and science
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• v.1 no.1
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• pp.73-77
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• 2001

We studied the fabrication of GaAs-based pseudomorphic high electron mobility transistors(PHEMT`s) for the purpose of millimeter- wave applications. To fabricate the high performance GaAs-based PHEMT`s, we performed the simulation to analyze the designed epitaxial-structures. Each unit processes, such as 0.1 m$\mu$$\Gamma$-gate lithography, silicon nitride passivation and air-bridge process were developed to achieve high performance device characteristics. The DC characteristics of the PHEMT`s were measured at a 70 $\mu$m unit gate width of 2 gate fingers, and showed a good pinch-off property ($V_p$= -1.75 V) and a drain-source saturation current density ($I_{dss}$) of 450 mA/mm. Maximum extrinsic transconductance $(g_m)$ was 363.6 mS/mm at $V_{gs}$ = -0.7 V, $V_{ds}$ = 1.5 V, and $I_{ds}$ =0.5 $I_{dss}$. The RF measurements were performed in the frequency range of 1.0~50 GHz. For this measurement, the drain and gate voltage were 1.5 V and -0.7 V, respectively. At 50 GHz, 9.2 dB of maximum stable gain (MSG) and 3.2 dB of $S_{21}$ gain were obtained, respectively. A current gain cut-off frequency $(f_T)$ of 106 GHz and a maximum frequency of oscillation $(f_{max})$ of 160 GHz were achieved from the fabricated PHEMT\\`s of 0.1 m$\mu$ gate length.h.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.5 s.347
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• pp.182-188
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• 2006

In this study, we have designed the millimeter-wave passive imaging system which records energy that is reflected or emitted from the source and produces image. The lens and front-end of receiver appeared to be important in the system to detect input thermal noise signal. The lens for signal focusing has been designed by optical transfer function. Amplifier of the imaging systemhas been set up with 40dB in maximum gain, 5 dB in maximum noise figure, and 10GHz in bandwidth to enhance sensitivity for thermal noise and to receive it in wide-band width as well. The SBD MSS-20 141B10D diode has been used for the detector circuit to convert amplified millimeter-wave signals to DC output.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.1
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• pp.17-24
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• 2008

This paper deals with a millimeter wave source which is utilizing sub-harmonic injection-synchronization technique. A 8.7GHz oscillator with MES-FET is fabricated, and is driven as a harmonic output oscillator at 17.4GHz by means of sub-harmonic injection-synchronization. The oscillator operates as a multiplier as well as oscillator in this system. Adopting this technique, we can obtain a high stable, high frequency millimeter wave source even though self-oscillating frequency of an oscillator is relatively low. In the experiments, the range of injection-synchronization is about 26MHz and is proportional to the input sub-harmonic power. From the spectrum analysis of the 2nd harmonic output. we blow that the phase noise of the harmonic oscillator is remarkably decreased.

• ETRI Journal
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• v.33 no.3
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• pp.462-465
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• 2011

A millimeter-wave (mm-wave) high-linear low-noise amplifier (LNA) is presented using a 0.18 ${\mu}m$ standard CMOS process. To improve the linearity of mm-wave LNAs, we adopted the multiple-gate transistor (MGTR) topology used in the low frequency range. By using an MGTR having a different gate-source bias at the last stage of LNAs, third-order input intercept point (IIP3) and 1-dB gain compression point ($P_{1dB}$) increase by 4.85 dBm and 4 dBm, respectively, without noise figure (NF) degradation. At 33 GHz, the proposed LNAs represent 9.5 dB gain, 7.13 dB NF, and 6.25 dBm IIP3.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.5
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• pp.163-167
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• 2016

We have developed a millimeter-wave radiometer system for applications in the fields of medical imaging. In this paper, we introduced the brightness temperature measurement in the human body using Millimeter-wave Radiometer. Calibration of sensitivity of the radiometer system is essential to measure equivalent temperature (brightness temperature) of objects. We have developed, as a calibration source, a new type of black body for the millimeter wave region with temperature control capability. The system noise figure and temperature sensitivity of the system measured using the blackbody are 3.3 dB and 0.1 K, respectively. The brightness temperature of human body through clothes was measured to be around $38^{\circ}$[C].

• Proceedings of the IEEK Conference
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• 2000.07b
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• pp.1009-1012
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• 2000

In this paper, we have designed and fabricated power PHEMT’s with an unit gate width of 80$\mu\textrm{m}$ and 4 fingers, and MIMIC power amplifiers using the PHEMT’s as well. The PHEMT’s have a 0.2$\mu\textrm{m}$ gate length and source to drain spacing of 3$\mu\textrm{m}$. The characteristics of the fabricated PHEMT’s are 4.08dB of S$\sub$21/ gain at the 35GHz and 317mS/mm of gm, and 62GHz of f$\sub$T/ and 120GHz of f$\sub$max/. The designed and fabricated MIMIC’s power amplifiers with 6 PHEMT’s and MIN capacitors were fully passivated by 1000 Α of Si$_3$N$_4$ film for higher performance and surface protects. The chips were processed using the MINT processes, and size was 3.25 ${\times}$ 1.8$\textrm{mm}^2$. The fabricated MIMIC power amplifiers have RF characteristics such as 11.25dB of S$\sub$21/ gain, 11.37dB of input return-loss and 12.69dB of output return-loss at the 34.55GHz.

• Biomedical Science Letters
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• v.17 no.1
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• pp.79-84
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• 2011

Photodynamic therapy consists of a photosensitizer, suitable light source and oxygen. The excitation of the photosensitizer at a cancer mass results in oxidation which would ultimately reduce the mass via apoptosis. Millimeter wave (MMW) therapy has also been known to be effective on cancer cell mass reduction, human cell regeneration and immunity enhancement among the Russian clinicians and scientists. In the present study, the two modalities were combined to achieve synergistic effects while reducing the administration dosage of the photosensitizer, photogem, thus minimizing the side effects. The CT-26 adenocarcinoma cell mass was implanted on mice and the tumors were exposed to a simple MMW irradiation or a combined treatment of MMW and PDT. The treatments continued for 4 weeks and the size of the tumor was measured continuously. The significant therapeutic result of MMW was not found during 4 weeks, preferably more cancer recurrence possibility after MMW irradiation was observed. The results of this study suggest that the combination of MMW irradiation and photodynamic treatment should not be recommended. The result of the MMW treatment alone, however, displayed suppressive effect on cancer cell proliferation for both in vitro and in vivo. The results of the present study suggest that the millimeter wave therapy deserves a further study.