• Title/Summary/Keyword: microwire

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New Classes of LC Resonators for Magnetic Sensor Device Using a Glass-Coated Amorphous CO83.2B3.3Si5.9Mn7.6 Microwire

  • Kim, Yong-Seok;Yu, Seong-Cho;Hwang, Myung-Joo;Lee, Hee-Bok
    • Journal of Magnetics
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    • v.10 no.3
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    • pp.122-127
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    • 2005
  • New classes of LC resonators for micro magnetic sensor device were proposed and fabricated. The first type LC resonator (Type I) consists of a small piece of microwire and two cylindrical electrodes at the end of the microwire without direct contact to its ferromagnetic core. In type I resonator the ferromagnetic core of the microwire and cylindrical electrodes act as an inductor and two capacitors respectively to form a LC circuit. The second type LC resonator (Type II) consists of a solenoidal micro-inductor with a bundle of soft magnetic microwires as a core. The solenoidal micro-inductors fabricated by MEMS technique were $500\sim1,000\;\mu{m}$ in length with $10\sim20$ turns. A capacitor is connected in parallel to the micro-inductor to form a LC circuit. A tiny glass coated $CO_{83.2}B_{3.3}Si_{5.9}Mn_{7.6}$ microwire was fabricated by a glass-coated melt spinning technique. A supergiant magneto-impedance effect was found in a type I resonator as much as 400,000% by precise tuning frequency at around 518.51 MHz. In type II resonator the changes of inductance as a function of external magnetic field in micro-inductors with properly annealed microwire cores were varied as much as 370%. The phase angle between current and voltage was also strongly dependent on the magnetic field. The drastic increments of magnetoimpedance at near the resonance frequency were observed in both types of LC resonators. Accordingly, the sudden change of the phase angle, as large as $180^{\circ}C$, evidenced the occurrence of the resonance at a given external magnetic field.

Fabrication of Microwire Arrays for Enhanced Light Trapping Efficiency Using Deep Reactive Ion Etching

  • Hwang, In-Chan;Seo, Gwan-Yong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.454-454
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    • 2014
  • Silicon microwire array is one of the promising platforms as a means for developing highly efficient solar cells thanks to the enhanced light trapping efficiency. Among the various fabrication methods of microstructures, deep reactive ion etching (DRIE) process has been extensively used in fabrication of high aspect ratio microwire arrays. In this presentation, we show precisely controlled Si microwire arrays by tuning the DRIE process conditions. A periodic microdisk arrays were patterned on 4-inch Si wafer (p-type, $1{\sim}10{\Omega}cm$) using photolithography. After developing the pattern, 150-nm-thick Al was deposited and lifted-off to leave Al microdisk arrays on the starting Si wafer. Periodic Al microdisk arrays (diameter of $2{\mu}m$ and periodic distance of $2{\mu}m$) were used as an etch mask. A DRIE process (Tegal 200) is used for anisotropic deep silicon etching at room temperature. During the process, $SF_6$ and $C_4F_8$ gases were used for the etching and surface passivation, respectively. The length and shape of microwire arrays were controlled by etching time and $SF_6/C_4F_8$ ratio. By adjusting $SF_6/C_4F_8$ gas ratio, the shape of Si microwire can be controlled, resulting in the formation of tapered or vertical microwires. After DRIE process, the residual polymer and etching damage on the surface of the microwires were removed using piranha solution ($H_2SO_4:H_2O_2=4:1$) followed by thermal oxidation ($900^{\circ}C$, 40 min). The oxide layer formed through the thermal oxidation was etched by diluted hydrofluoric acid (1 wt% HF). The surface morphology of a Si microwire arrays was characterized by field-emission scanning electron microscopy (FE-SEM, Hitachi S-4800). Optical reflection measurements were performed over 300~1100 nm wavelengths using a UV-Vis/NIR spectrophotometer (Cary 5000, Agilent) in which a 60 mm integrating sphere (Labsphere) is equipped to account for total light (diffuse and specular) reflected from the samples. The total reflection by the microwire arrays sample was reduced from 20 % to 10 % of the incident light over the visible region when the length of the microwire was increased from $10{\mu}m$ to $30{\mu}m$.

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A Study on Growth of Graphene/metal Microwires and Their Electrical Properties (금속/그래핀 이중 구조 와이어의 합성 및 전기적 특성 연구)

  • Jeong, Minhee;Kim, Dongyeong;Rho, Hokyun;Shin, Han-Kyun;Lee, Hyo-Jong;Lee, Sang Hyun
    • Journal of the Microelectronics and Packaging Society
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    • v.28 no.1
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    • pp.67-71
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    • 2021
  • In this study, graphene layer was grown on metal microwire using chemical vapor deposition. The difference of carbon solubility between copper and nickel resulted in the formation of mono-layer and multi-layer graphene were formed on the surfaces of copper and nickel microwires, respectively. During the growth of graphene at high temperature, copper and nickel were recrytallized and the grain size increased. The ampacity of graphene/copper microwire was improved by approximately 27%, 1.91×105 A/㎠, compared to pristine copper microwire. Similar to this behavior, the ampacity of multilayer graphene/nickel microwire was 4.41×104 A/㎠ which is about about 36% improved compared to the pure nickel microwire. The excellent electrical properties of graphene/metal composites are beneficial for supplying the electrical energy to the high-power electronic devices and equipment.

The Effect of Mask Patterns on Microwire Formation in p-type Silicon (P-형 실리콘에서 마이크로 와이어 형성에 미치는 마스크 패턴의 영향)

  • Kim, Jae-Hyun;Kim, Kang-Pil;Lyu, Hong-Kun;Woo, Sung-Ho;Seo, Hong-Seok;Lee, Jung-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.418-418
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    • 2008
  • The electrochemical etching of silicon in HF-based solutions is known to form various types of porous structures. Porous structures are generally classified into three categories according to pore sizes: micropore (below 2 nm in size), mesopore (2 ~ 50 nm), and macropore (above 50 nm). Recently, the formation of macropores has attracted increasing interest because of their promising characteristics for an wide scope of applications such as microelectromechanical systems (MEMS), chemical sensors, biotechnology, photonic crystals, and photovoltaic application. One of the promising applications of macropores is in the field of MEMS. Anisotropic etching is essential step for fabrication of MEMS. Conventional wet etching has advantages such as low processing cost and high throughput, but it is unsuitable to fabricate high-aspect-ratio structures with vertical sidewalls due to its inherent etching characteristics along certain crystal orientations. Reactive ion dry etching is another technique of anisotropic etching. This has excellent ability to fabricate high-aspect-ratio structures with vertical sidewalls and high accuracy. However, its high processing cost is one of the bottlenecks for widely successful commercialization of MEMS. In contrast, by using electrochemical etching method together with pre-patterning by lithographic step, regular macropore arrays with very high-aspect-ratio up to 250 can be obtained. The formed macropores have very smooth surface and side, unlike deep reactive ion etching where surfaces are damaged and wavy. Especially, to make vertical microwire or nanowire arrays (aspect ratio = over 1:100) on silicon wafer with top-down photolithography, it is very difficult to fabricate them with conventional dry etching. The electrochemical etching is the most proper candidate to do it. The pillar structures are demonstrated for n-type silicon and the formation mechanism is well explained, while such a experimental results are few for p-type silicon. In this report, In order to understand the roles played by the kinds of etching solution and mask patterns in the formation of microwire arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, dimethyl sulfoxide (DMSO), iso-propanol, and mixtures of HF with water on the structure formation on monocrystalline p-type silicon with a resistivity with 10 ~ 20 $\Omega{\cdot}cm$. The different morphological results are presented according to mask patterns and etching solutions.

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A New LC Resonator Fabricated by MEMS Technique and its Application to Magnetic Sensor Device (MEMS 공정에 의한 LC-공진기형 자기센서의 제작과 응용)

  • Kim, Bong-Soo;Kim, Yong-Seok;Hwang, Myung-Joo;Lee, Hee-Bok
    • Journal of the Korean Magnetics Society
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    • v.17 no.3
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    • pp.141-146
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    • 2007
  • A new class of LC-resonator for micro magnetic sensor device was invented and fabricated by means of MEMS technique. The micro LC-resonator consists of a solenoidal micro-inductor with a bundle of soft magnetic microwire cores and a capacitor connected in parallel to the micro-inductor. The core magnetic material is a tiny glass coated $Co_{83.2}B_{3.3}Si_{5.9}Mn_{7.6}$ microwire fabricated by a glasscoated melt spinning technique. The core materials were annealed at various temperatures $150^{\circ}C,\;200^{\circ}C\;,250^{\circ}C\;,$ and $300^{\circ}C$ for 1 hour in a vacuum to improve soft magnetic properties. The solenoidal micro-inductors fabricated by MEMS technique were $500{\sim}1,000{\mu}m$ in length with $10{\sim}20$ turns. The changes of inductance as a function of external magnetic field in micro-inductors with properly annealed microwire cores were varied as much as 370%. Since the permeability of ultra soft magnetic microwire is changing rapidly as a function of external magnetic field. The inductance ratio as well as magnetoimpedance ratio (MIR) in a LC-resonator was varied drastically as a function of external magnetic field. The MIR curves can be tuned very precisely to obtain maximum sensitivity. A prototype magnetic sensor device consisting of the developed microinductors with a multivibrator circuit was test successfully.

Super-giant Magneto-Impedance Effect of a LC-resonator Using a Glass-Coated Amorphous Microwire

  • Lee, Heebok;Kim, Yong-Seok;Yu, Seong-Cho
    • Journal of Magnetics
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    • v.7 no.4
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    • pp.160-164
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    • 2002
  • A new discovery of the super-giant magneto-impedance (SGMI) effect was found out in a LC-resonator consisted of a glass-coated amorphous $CO_{83.2}B_{3.3}Si_{5.9}Mn_{7.6}$ microwire. The measurement was carried out at high frequency range from 100 MHz up to 1 GHz of an ac-current flowing along the wire and at varying axial dcmagnetic field in its range of $\pm$120 Oe. The wires, about 16${\mu}m$ in diameter, were fabricated by a glass-coated melt spinning technique. The shape of the impedance curves plotted vs. a dc-field is changing dramatically with the frequency. The phase angle was also strongly dependent on this field. The external dc-magnetic field changes the circumferential permeability as well as the penetration depth, both in turn change the impedance of the sample. The drastic increments of SGMI at high frequency can be understood in terms of the LC-resonance phenomena. The sudden change of the phase angle, as large as $180^{\circ}$ evidenced the occurrence of the resonance at a given intensity of the external dc-field. The maximum ratio of SGMI reached in the experiment by precise tuning frequency equals 450,000% at the frequency of around 551.9075 MHz.

High Aspect Single Crystalline Au Nanowire Electrode with an Atomically Smooth (111) Surface

  • Gang, Mi-Jeong;Gang, Ho-Seok;Gwak, Ju-Hyeon;Kim, Bong-Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.210-210
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    • 2011
  • Ultrasmall electodes are of great importance for basic electrochemical study and applications. We fabricated single crystal (111) Au nanowire (NW) by growth mechanism on substrate without any catalyst. Consequently, these high aspect NW combined with tungsten microwire and the electrodes having NW tip on their end were obtained. These single crystal Au (111) NWs were characterized by electron microscope and electrochemical analysis. We show that precise electrochemical measurement could be possible on these NW electrode by obtaining underpotential deposition (UPD) and ferricyanide CV profiles on the electrode. The immersed depth of electrode into solution was controlled in micrometer scale by piezo-driven manipulator.

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Enhanced Giant Magnetoimpedance in Co-based Microwire by Pluse Nd:YAG laser (펄스형 레이저를 비정질 와이어 거대 자기교류저항전류 향상)

  • Lee, B.S.;Kim, C.G.;Kim, C.O.;Rheem, Y.W.;Jin, Lan;Kim, G.D.;Ahn, S.J.;Yoon, S.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.04a
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    • pp.76-78
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    • 2002
  • The influence of laser annealing on gaint magnetoimpedance effect of glass-covered Co-based amorphous microwires is investigated by illuminating pulse Nd:YAG laser on the etched microwires. The maxium GMI ratio reaches maximum of around 85 % at the frequency of 5 MHz for the sample iluminated by the pulse with laser energy fo 132 mJ/pulse.

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