• Title/Summary/Keyword: microwave vacuum

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The Gettering Effect of Boron Doped n-type Monocrystalline Silicon Wafer by In-situ Wet and Dry Oxidation

  • Jo, Yeong-Jun;Yun, Ji-Su;Jang, Hyo-Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.429-429
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    • 2012
  • To investigate the gettering effect of B-doped n-type monocrystalline silicon wafer, we made the p-n junction by diffusing boron into n-type monocrystalline Si substrate and then oxidized the boron doped n-type monocrystalline silicon wafer by in-situ wet and dry oxidation. After oxidation, the minority carrier lifetime was measured by using microwave photoconductance and the sheet resistance by 4-point probe, respectively. The junction depth was analyzed by Secondary Ion Mass Spectrometry (SIMS). Boron diffusion reduced the metal impurities in the bulk of silicon wafer and increased the minority carrier lifetime. In the case of wet oxidation, the sheet resistance value of ${\sim}46{\Omega}/{\Box}$ was obtained at $900^{\circ}C$, depostion time 50 min, and drive-in time 10 min. Uniformity was ~7% at $925^{\circ}C$, deposition time 30 min, and drive-in time 10 min. Finally, the minority carrier lifetime was shown to be increased from $3.3{\mu}s$ for bare wafer to $21.6{\mu}s$ for $900^{\circ}C$, deposition 40 min, and drive-in 10 min condition. In the case of dry oxidation, for the condition of 50 min deposition, 10 min drive-in, and O2 flow of 2000 SCCM, the minority carrier lifetime of 16.3us, the sheet resistance of ${\sim}48{\Omega}/{\Box}$, and uniformity of 2% were measured.

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Broadband metamaterial absorber using resistive layers

  • Kim, Y.J.;Yoo, Y.J.;Hwang, J.S.;Son, H.M.;Rhee, J.Y.;Kim, K.W.;Lee, Y. P.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.359.1-359.1
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    • 2016
  • The electromagnetic (EM) properties of media, such as propagation, focusing and scattering, strongly rely on the electric permittivity and the magnetic permeability of media. Recently, artificially-created metamaterials (MMs) composed of periodically-arranged unit cells with tailored electric permittivity and magnetic permeability have drawn wide interest due to their capability of adjusting the EM response. MM absorbers using the conventional sandwich structures usually have very high absorption at a certain frequency, and the absorption properties of MMs can be adjusted simply by changing the geometrical parameters of unit cell. In this work, we suggested an incident-angle-independent broadband perfect absorber based on resistive layers. We analyze the absorption mechanism based on the impedance matching with the free space and the distribution of surface currents at specific frequencies. From the simulation, the absorption was expected to be higher than 96% in 1.4-6.0 GHz. The corresponding experimental absorption was found to be higher than 96% in 1.4-4.0 GHz, and the absorption turned out to be slightly lower than 96% in 4.0-6.0 GHz owing to the irregularity in the thickness of resistive layers.

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Local Back Contact Formed by Screen Printing and Atomic Layer Deposited Al2O3 for Silicon Solar Cell

  • Jo, Yeong-Jun;Jang, Hyo-Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.687-687
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    • 2013
  • In rearpoint contact solar cell and the PERC (passivated emitter rear contact) type cell, surfaces were passivated by SiO2 or Al2O3 to increase solar cell efficiency. Therefore, we have investigated the effect of surface passivation for crystalline silicon solarcell using mass-production atomic layer deposited (ALD) Al2O3. The patttern which consists of cylinders with 100um diameter and 5um height was formed by PR patterning on Si (100) substrate and then Al2O3 of about 10nm and 20nm thickness was deposited by ALD. The pattern in 10 nm Al2O3 film was removed by dipping in aceton solution for about 10 min but the pattern in 20 nm Al2O3 film was not. The influences of process temperature and heat treatment were investigated using microwave photoconductance decay (PCD) and Quasi-Steady-State photoconductance (QSSPC). The solar cell process used in this work combines the advantage of using the applicability of a selective deposition associated with a ALD passivation and the use of low-cost screen print for the contacts formation.

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Analysis of a Spun-CNT Based X-ray Source

  • Kim, Hyun Suk;Castro, Edward Joseph D.;Hun, Choong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.639-639
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    • 2013
  • In this research we report the significant contribution of the as-spun multi-walled carbon nanotube (MWCNT) on the x-ray images formation using a low tube voltage x-ray source. The MWCNT, which was used for the fabrication of the spun CNT, was grown using a microwave plasma-enhanced chemical vapor deposition machine. Electrical-optics simulation software was utilized to determine the electron field emission trajectory of the triode-structure-as-spun CNT-based x-ray source. It was shown that a significant amount of converging electrons hit the target anode producing a clear x-ray image. These x-ray images where produced at a small amount of anode current of 0.67 mA at a tube voltage of 5 kV with the gate voltage of 0 V. Also, comparisons of the radiographs at various exposure times of the sample where analyzed with and without an x-ray dose filter. Results showed that spatially-resolved images were formed using the as-spun CNT at a low tube voltage with a $54-{\mu}m$ Al x-ray filter. This study can be used for low-voltage medical applications.

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Electrical characteristics of lateral poly0silicon field emission triode using LOCOS process

  • Lee, Jae-Hoon;Lee, Myoung-Bok;Park, Dong-Il;Ham, Sung-Ho;Lee, Jong-Hyun;Lee, Jung-Hee
    • Journal of Korean Vacuum Science & Technology
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    • v.3 no.1
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    • pp.38-42
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    • 1999
  • Using the LOCOS process, we have fabricated the lateral type polysilicon field emission triodes with poly-Si/oxide/Si structure and investigated their current-voltage characteristics for three biasing modes of operation. The fabricated devices exhibit excellent electrical performances such as a relatively low turn-on anode voltage of 14 V at VGC = 0V, a stable and high emission current of 92${\mu}$A/triode over 90 hours, a small gate leakage current of 0.23 ${\mu}$A/triode and an outstanding transconductance of 57${\mu}$S/5triodes at VGC = 5V and VAC = 26V. these superior electrical operation is believed to be due to a large field enhancement effect, which is related to the sharp cathode tips produced by the LOCOS process as well as the high aspect ratio (height /radius ) of the cathode tip end.

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One- and Two-Dimensional Arrangement of DNA-Templated Gold Nanoparticle Chains using Plasma Ashing Method

  • Kim, Hyung-Jin;Hong, Byung-You
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.291-291
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    • 2010
  • Electron-beam lithography (EBL) process is a versatile tool for a fabrication of nanostructures, nano-gap electrodes or molecular arrays and its application to nano-device. However, it is not appropriate for the fabrication of sub-5 nm features and high-aspect-ratio nanostructures due to the limitation of EBL resolution. In this study, the precision assembly and alignment of DNA molecule was demonstrated using sub-5 nm nanostructures formed by a combination of conventional electron-beam lithography (EBL) and plasma ashing processes. The ma-N2401 (EBL-negative tone resist) nanostructures were patterned by EBL process at a dose of $200\;{\mu}C/cm2$ with 25 kV and then were ashed by a chemical dry etcher at microwave (${\mu}W$) power of 50 W. We confirmed that this method was useful for sub-5 nm patterning of high-aspect-ratio nanostructures. In addition, we also utilized the surface-patterning technique to create the molecular pattern comprised 3-(aminopropyl) triethoxysilane (APS) as adhesion layer and octadecyltrichlorosilane (OTS) as passivation layer. DNA-templated gold nanoparticle chain was attached only on the sub-5 nm APS region defined by the amine groups, but not on surface of the OTS region. We were able to obtain DNA molecules aligned selectively on a SiO2/Si substrate using atomic force microscopy (AFM).

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대기압 아르곤 마이크로웨이브 플라즈마 방전에서 스트리머 채널 형성에 대한 기초연구

  • Lee, Jin-Yeong;Kim, Gon-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.130-130
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    • 2010
  • 마이크로웨이브를 소스로 사용하는 상압 공정 장치는 비교적 저렴한 비용과 구동의 용이성 때문에 널리 사용되고 있다. 이러한 상압 마이크로웨이브 장치는 에너지 전달 방식에 따라 도파관을 사용하는 TIA (Torch Inject Axial)방식과 동축선을 사용하는 MPT (Microwave plasma torch)로 구분할 수 있다. 이 중 TIA 방식은 동축선에 비해 에너지 전달 용량이 큰 도파관을 사용하기 때문에 대용량 처리가 가능하다. TIA 방식에서 형성된 플라즈마의 조절과 처리 효율의 증가는 형성되는 각각의 스트리머 채널의 조절에 의해 결정된다. 방전기 내부에서 스트리머 채널은 인가된 전기장의 방향으로 성장하게 되며 전기장 현상을 조절함으로써 스트리머 채널의 조절이 가능하다. 내부에 인가되는 전기장은 마그네트론에 의해 인가되는 전기장, 스트리머 채널간의 유도 전기장, 열적 팽창효과에 의한 스트리머 헤드 형상 변화에 의한 전기장으로 구분될 수 있다. 이 때 각각의 항들의 조절을 위해 생성된 플라즈마의 온도, 밀도 등의 범위를 측정할 필요가 있으며 광학적인 방법을 통해 플라즈마의 온도, 밀도를 측정하였다. 이 결과를 토대로 도파관의 형상, 방전 기체의 유량, 방전 기체의 조성을 통해 각각 전기장의 조절이 가능하였다. 각 변수의 조절을 통해 방전기 내부에서 플라즈마 헤드 성장에 대해 알 수 있었고 끝이 열린 TIA 구조에서 발생하는 플라즈마 수렴 현상을 설명할 수 있었다.

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Room Temperature Ferromagnetism on Co and Fe Doped Multi-wall Carbon Nano-tube

  • Chae, K.H.;Gautam, S.;Yu, B.Y.;Song, J.H.;Augustine, S.;Kang, J.K.;Asokan, K.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.171-171
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    • 2011
  • Co and Fe doped multi-wall carbon nano-tubes (MWCNTs) synthesized by microwave plasma enhanced chemical vapor deposition (PECVD) technique are investigated with synchrotron radiations at Pohang Light Source (PAL) and European Synchrotron Radiation Facility (ESRF). Near edge x-ray absorption spectroscopy (NEXAFS) measurement at C K, Co $L_{3,2}$ and Fe $L_{3,2}$-edges, and x-ray magnetic circular dichroism (XMCD) at Co and Fe $L_{3,2}$-edges have been carried at 7B1 XAS KIST and 2A MS beamline, respectively, to understand the electronic structure and responsible magnetic interactions at room temperature. X-ray absorption spectroscopy (XAS) at C K-edge shows significant p-bonding and Co and Fe L-edges proves the presence of $Co^{2+}$ and $Fe^{2+}$ in octahedral symmetry. Co and Fe doped MWCNTs show good XMCD spectra at 300K. The effect on the magnetism is also studied through swift heavy ion (SHI) radiations and magnetism is found enhanced and change in the electronic structure in Co-CNTs is investigated.

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Magnetron Sputtering Technology의 연구 및 개발 방향에 대한 동향

  • Park, Jang-Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.95-95
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    • 2012
  • 스터퍼링 기술이 1852년 Grove에 의해서 최초 발견되어 1979년 Chapin에 의해서 planar magnetron cathode 개발로 진공코팅기술의 새로운 영역을 열게 되어 현재까지 디스플레이, 반도체, 태양전지, 광학산업 및 전자부품 등 나노 산업에 필수적으로 적용되고 있다. 스퍼터링 입자는 운동량 전달에 의한 것으로 운동량을 갖는 나노 스퍼터링 입자는 기판에 대한 박막의 부착력이 우수하고 대면적에 균일하고 재현성 있게 성막되는 특징을 갖고 있다. 마그네트론 스퍼터링 기술이 산업에 응용되면서 주로 4분야에서 많은 연구, 개발이 되어져 왔다. 첫째는 타겟의 고순도 및 고밀도화와 더불어 가격이 고가로 됨에 따라 타겟 사용효율의 향상이다. 플라즈마를 발생시키는 캐소드의 자기회로를 1차원, 2차원 및 회전운동을 통해서 사용효율을 향상시키고 있다. 둘째는 기판에 대해서 박막특성이 균일하도록 코팅하는 것이다. 디스플레이에서는 글래스 기판이 대면적으로 됨에 따라서 핸들링이 어려워져 여러 개의 캐소드 자기회로를 선형적으로 이동시켜 박막두께분포를 최적화하며 반응성 가스를 사용해서 균일한 특성의 박막을 제작하는 경우에는 가스분사관과 배기펌프계의 기하학적 위치 및 가스 유동학적 해석이 필요하다. 셋째는 스퍼터링 입자의 이온화로 의한 박막의 특성향상과 반도체 trench의 높은 aspect ratio hole을 채우는 것이다. 이온화 방법으로는 inductively coupled plasma (ICP), microwave amplified (MA), high power impulse (HIPI), hollow cathode magnetron (HCM), self-sustained sputtering 등이 사용되어져 왔으며 최근에는(neutral beam-assisted sputtering (NBAS)에 의한 박막특성향상 방법이 발표되고 있다. 넷째는 플라즈마 및 박막두께 시뮬레이션에 대해서 많은 발표가 되고 있다. 본 발표에서는 상기의 4 분야를 포함한 향후 개발방향에 대해서 소개할 예정이다.

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Chemoselective Alkylation of Aromatics with Benzyl Alcohol over Mesoporous ZSM-5

  • Jin, Hailian;Ansari, Mohd Bismillah;Jeong, Eun-Young;Park, Sang-Eon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.200-200
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    • 2011
  • Hierarchical mesoporous ZSM-5 with enhanced mesoporosity was synthesized by microwave through the rapid assembly via ionic interaction between sulfonic acid functionalized ZSM-5 nano particles and cationic surfactant. The catalytic performance of enhanced accessibility due to mesoporosity and acidity were investigated in the alkylation of mesitylene with benzyl alcohol as alkylating agent. The effect of mole ratio of aromatic with benzyl alcohol, reaction time and alkylation agent were also studied. The enhanced mesoporosity and acidity of sulfonic acid functionalized mesoporous ZSM-5 induced activity enhancement compared with non-functionalized mesoporous ZSM-5, sulfonic functionalized mesoporous ZSM-5 synthesized by hydrothermal method and conventional microporous ZSM-5. The sulfonic acid functionalized mesoporous ZSM-5 showed much higher chemoselectivity of benzylated mesitylene than others, whereas the others mainly show dibenzyl ether as product. This significant difference in catalytic selectivity was resulted from the existence of mesopores, which definitely allowed the benzylation in mesopores.

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