• 한국정보통신학회논문지
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• 제23권3호
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• pp.341-348
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• 2019

본 논문에서는 WLAN(Wireeless Local Area Network)과 WiMAX(World Interoperability for Microwave Access) 표준화 주파수 대역에 적합하도록 모노폴 형태의 삼중대역 안테나를 설계 제작하였다. 마이크로스트립 급전방법을 채택하고 사각 링과 사각 패치의 결합 구조로 설계하였으며 임피던스 특성을 향상시키기 위해 사각 링 패치 상단에 두 개의 스터브 추가하여 향상된 삼중대역 특성을 얻었다. 제안된 안테나는 $29.0mm(W){\times}44.0mm(L){\times}1.0mm(t)$의 유전체 기판 위에 $18.0mm(2W_1+W_2){\times}33.0mm(L_7+L_8+L_9)$의 크기로 설계되었다. 제작 및 측정 결과로부터 2.4/2.5 GHz에서는 660MHz (2.08~2.74GHz), 3.5GHz 대역에서는 488.0MHz (3.40 ~ 3.88GHz), 그리고 5.0GHz 대역에서는 2,180MHz (4.61 ~ 6.79GHz)의 대역폭을 얻었다. 또한 무반사실의 측정결과로부터 제작된 안테나의 이득과 방사패턴 특성을 확인하였다.

• 생물환경조절학회지
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• 제11권4호
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• pp.151-156
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• 2002

지중냉각이나 양액냉각과 같은 근권부 냉각은 뿌리의 활력 증진, 양수분 흡수력의 향상, 작물체온의 강하 및 고온스트레스의 감소 등에 효과가 있는 것으로 알려져 있으며, 또한 온실 전체를 냉방하는것 보다 경제적이다. 따라서 본 연구에서는 지중냉각시스템을 경제적인 고온극복 방법중의 하나로 생각하고, 기술을 체계화하기 위한 시도로 지중냉각시스템의 열전달 특성을 분석하여 냉각부하를 산정하기 위한 실험을 수행하였다. 지중열류 측정자료로부터 힘수비에 따른 토양의 열전도율을 분석하였으며, 함수비 19~36%의 범위에서 열전도율은 0.83~0.96W.m$^{-}$.$^{\circ}C$$^{-}$로 직선적인 증가를 보였다. 일사량, 지표온도 및 기온의 관측치로부터 일사량에 따른 지표온도 상승을 회귀분석한 결과 거의 직선적인 관계를 보였으며, 지표온도는 실내 수평면 일사량 300~800W.m$^{-2}$ 범위에서 작물이 없는 경우 3.5~7.$0^{\circ}C$,작물이 지표면을 거의 덮고 있는 경우 1.0~2.5$^{\circ}C$ 정도 기온보다 상승하는 것으로 나타났다. 실험자료를 이용하여 온실의 설계기온과 냉각설정 지온, 일사량 및 토양의 함수비에 따른 지중냉각시스템의 냉각부하를 구하였다. 실내일사량 300~600W.m$^{-2}$ , 토양함수비 20~40%의 범위에서 기온과 지온의 차이를 1$0^{\circ}C$로 유지하기 위해서는 46~59W.m$^{-2}$ 의 냉각열량이 필요한 것으로 나타났다. 보다 정확한 설계자료의 구축을 위해서는 다양한 조건별 실험을 추가로 수행해야 할 것으로 생각된다.EX>$\mu$$_{r}$′) and the dielectric loss ($\varepsilon$$_{r}$"/$\varepsilon$$_{r}$′) were increased. It was caused that the absorption characteristics of the absorber were improved. The conduction loss and magnetic loss were expected to be occurred together because two matching frequencies were shown with carbon addition. It was confirmed that the matching frequency of the microwave absorber could be controlled by controlling heat-treatment temperatures and carbon additions.ons.tions.加的)으로 되거나 과가황(過加黃)이 될 우려가 있는 제조공정(製造工程)에서는 흔히들 이 방법(方法)을 무시(無視)하고 있다. 여기서 강조(强調)해 두어야 할 것은 항상 제품(製品)의 외부(外部)를 완전(完全)히 가황(加黃)시킬 필요(必要)는 없다는 것이다. 다공성(多孔性)이나 기포생성(氣泡生成)을 조장(助長)하는 불량가황상태(不良加黃狀態)와 표면(表面)에서의 과가황상태간(過加黃狀態間)의 균형(均衡)을 취(取)해 줘야 하는데 물론(勿論) 이때는 가황시간(加黃時間)을 단축(短縮)시켜야 한다는 경제적(經濟的)인 측면(側面)도 아울러 고려(考慮)해야 한다. 이것은 고무기술자(技術者)가 당면(當面)해야할 과제(課題)

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.258-292
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• 1996

In the last year great interest appears to YBCO thin films preparation on different substrate materials. Preparation of epitaxial film is a very difficult problem. There are many requirements to substrate materials that must be fullfilled. Main problems are lattice mismatch (misfit) and similarity of structure. From paper [1] or follows that difference in interatomic distances and angles of substrate and film is mire important problem than similarity of structure. In this work we present interatomic distances and angle relations between substrate materials belonging to ABCO4 group (where A-Sr or Ca, B-rare earth element, C-Al or Ga) of different orientations and YBCO thin films. There are many materials used as substrates for HTsC thin films. ABCO4 group of compounds is characterized by small dielectric constants (it is necessary for microwave applications of HTsC films), absence of twins and small misfit [2]. There most interesting compounds CaNdAlO4, SrLaAlO4 and SrLaGaO4 were investigated. All these compounds are of pseudo-perovskite structure with space group 14/mmm. This structure is very similar to structure of YBCO. SLG substrate has the lowest misfit (0.3%) and dielectric constant. For preparation of then films of substrates of this group of compound plane of <100> orientation are mainly used. Good quality films of <001> orientations are obtained [3]. In this case not only a-a misfit play role, but c-3b misfit is very important too. Sometimes, for preparation of thin films substrates of <001> and <110> orientations were manufactured [3]. Different misfits for different YBCO faces have been analyzed. It has been found that the mismatching factor for (100) face is very similar to that for (001) face so there is possibility of preparation of thin films on both orientations. SrLaAlO4(SLA) and SrLaGaO4(SLG) crystals of general formula ABCO4 have been grown by the Czochralski method. The quality of SLA and SLG crystals strongly depends on axial gradient of temperature and growth and rotation rates. High quality crystals were obtained at axial gradient of temperature near crystal-melt interface lower than 50℃/cm, growth rate 1-3 mm/h and the rotation rate changing from 10-20pm[4]. Strong anisotropy in morphology of SLA and SLG single crystals grown by the Czochralski method is clearly visible. On the basics of our considerations for ABCO4 type of the tetragonal crystals there can appear {001}, {101}, and {110} faces for ionic type model [5]. Morphology of these crystals depend on ionic-covalent character of bonding and crystal growth parameters. Point defects are observed in crystals and they are reflected in color changes (colorless, yellow, green). Point defects are detected in directions perpendicular to oxide planes and are connected with instability of oxygen position in lattice. To investigate facets formations crystals were doped with Cr3+, Er3+, Pr3+, Ba2+. Chromium greater size ion which is substituted for Al3+ clearly induces faceting. There appear easy {110} faces and SLA crystals crack even then the amount of Cr is below 0.3at.% SLG single crystals are not so sensitive to the content of chromium ions. It was also found that if {110} face appears at the beginning of growth process the crystal changes its color on the plane {110} but it happens only on the shoulder part. The projection of {110} face has a great amount of oxygen positions which can be easy defected. Pure and doped SLA and SLG crystals measured by EPR in the<110> direction show more intensive lines than in other directions which allows to suggest that the amount of oxygen defects on the {110} plane is higher. In order to find the origin of colors and their relation with the crystal stability, a set of SLA and SLG crystals were investigated using optical spectroscopy. The colored samples exhibit an absorption band stretching from the UV absorption edge of the crystal, from about 240 nm to about 550 m. In the case of colorless sample, the absorption spectrum consists of a relatively weak band in the UV region. The spectral position and intensities of absorption bands of SLA are typical for imperfection similar to color centers which may be created in most of oxide crystals by UV and X-radiation. It is pointed out that crystal growth process of polycomponent oxide crystals by Czochralski method depends on the preparation of melt and its stoichiometry, orientation of seed, gradient of temperature at crystal-melt interface, parameters of growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth. Growth parameters have an influence on the morphology of crystal-melt interface, type and concentration of defects.