• Proceedings of the Korean Society for Agricultural Machinery Conference
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• 1996.06c
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• pp.293-304
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• 1996

Historical interest in dielectric properties of agricultural products and definitions of dielectric terms and basic principles governing their influence on elelctromagnetic energy are presented briefly . The nature of dielectric properties variation with frequency, temperature , and product density is discussed, Graphical data on the dielectric properties of products are presented that illustrate the dependence of these properties on moisture content, frequency, temperature, and density. Applications microwave dielectric properties of agricultural products are cited that include radio-frequency (RF) and microwave heating for seed treatment, improvement of nutritional and keeping qualities of some products, and controlling insects in grain. Uses of dielectric properties for product quality measurement and the rapid determination of moisture content are described. Principle of moisture determination in bulk grain by RF and microwave measurements are briefly presented.

• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.9-14
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• 1996

The effect on the microwave properties was investigated for the barium titanate doped with impurity of $WO_{3}$ 0.230 mole% produced by conventional solid state reaction method. Microwave resistance, reactance and impedance of the barium titanate were measured with 2-port s-parameter method by using network analyzer, in the range of room temperature to $160^{\circ}C$ and of frequency 300 kHz to 300 MHz. And possibility of frequency sensor and temperature sensor was estimated with barium titanate doped with $WO_{3}$.

• Proceedings of the KIEE Conference
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• 2001.04a
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• pp.293-296
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• 2001

A conventional power supply to drive a microwave oven has ferro-resonant transformer and high voltage capacitor(HVC). Though it is simple, transformer is bulky, heavy and has low-efficiency. To improve this defect, a high frequency inverter type power supply has been investigated and developed in recent years. But, because of additional control circuit and switching device, inverter-type power supply is more expensive than conventional one. In this study, The design procedure of a novel HVC embedded high frequency transformer is proposed for down-sizing and cost reduction of Inverter-type power supply. Also, equivalent circuit mode] is derived by FEM analysis and impedance measurements. And the operation of proposed HVC embedded transformer is verified by simulations and experimental results.

• Journal of the Korean Ceramic Society
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• v.45 no.4
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• pp.208-213
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• 2008

In this study, helical antenna with microwave ZST ceramics was designed using finite element method and developed. Studied parameters are relative dielectric constant of the dielectric core and the width of the conduction metal band of the antenna. As shown in the results, the center frequency of the antenna was decreased as the dielectric constant increased. Also beam width of the antenna increased as both the dielectric constant and the conduction band width increased. Based on the designed optimal shape, the manufactured antenna has the good beam width at center frequency 1.58 GHz.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.1
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• pp.81-85
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• 1996

Microwave dielectric properties of 0.15(B $a_{x}$S $r_{0.05}$)O-0.15(S $m_{2}$(1-y)N $d_{2y}$) $O_{3}$-0.7Ti $o_{2}$(x=o.9~0.1[mol.], y=6[m/o]) ceramics were investigated with BaO compositional ratio. Sintered density and resistivity of specimens were independent on the BaO compositional ratio. In the specimen with x=0.975[mol.], dielectric constant, quality factor and temperature coefficient of resonant frequency had good values of 76.52, 3001(at 3[GHz]) and +0.71[ppm/.ceg. C], respectively. By comparing with the stoichiometric compositions of 78.14, 2938(at 3[GHz])+14.19[ppm/.ceg. C], dielectric constant and quality factor showed similar properties, but the temperature coefficient of resonant frequency was highly improved. (author). refs., figs., tabs.s.s.

• Journal of the Optical Society of Korea
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• v.18 no.5
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• pp.449-452
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• 2014

We present a multi-tap microwave photonic filter with high selectivity through applying time-to-frequency mapping and optical frequency comb shaping techniques. When arranged in the time-to-frequency mapping stage, by a Fourier transform, the deviation of the optical taps to the target profile is significantly reduced while maintaining the apodization profile, resulting in high sidelobe suppression in the filters. By applying a simple time-to-frequency mapping stage to the conventional optical frequency combs, we demonstrate a substantially enhanced (>10dB) sidelobe suppression, resulting in filter lineshapes exhibiting a significantly high (>40dB) main lobe to sidelobe suppression ratio. These results highlight the potential of the technique for implementation in various passband filters with high sidelobe suppression.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.623-624
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• 2006

In this paper, we introduce the design and fabrication of V-band power amplifier MMIC with excellent gain-flatness for IEEE 802.15.3c WPAN system. The V-band power amplifier was designed using ETRI' $0.12{\mu}m$ PHEMT process. The PHEMT shows a peak transconductance ($G_{m,peak}$) of 500 mS/mm, a threshold voltage of -1.2 V, and a drain saturation current of 49 mA for 2 fingers and $100{\mu}m$ total gate width (2f100) at $V_{ds}$=2 V. The RF characteristics of the PHEMT show a cutoff frequency, $f_T$, of 97 GHz, and a maximum oscillation frequency, $f_{max}$, of 166 GHz. The gains of the each stages of the amplifier were modified to have broadband characteristics of input/output matching for first and fourth stages and get more gains of edge regions of operating frequency range for second and third stages in order to make the gain-flatness of the amplifier excellently for wide band. The performances of the fabricated 60 GHz power amplifier MMIC are operating frequency of $56.25{\sim}62.25\;GHz$, bandwidth of 6 GHz, small signal gain ($S_{21}$) of $16.5{\sim}17.2\;dB$, gain flatness of 0.7 dB, an input reflection coefficient ($S_{11}$) of $-16{\sim}-9\;dB$, output reflection coefficient ($S_{22}$) of $-16{\sim}-4\;dB$ and output power ($P_{out}$) of 13 dBm. The chip size of the amplifier MMIC was $3.7{\times}1.4mm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.642-645
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• 2002

Microwave dielectric properties of $ZnWO_4$ ceramic were investigated with calcination and sintering temperatures. The dielectric properties required for such application are high dielectric constant$(\varepsilon_r)$, high $Q{\times}f_o$ value and low temperature coefficient of resonant frequency$(\tau_f)$. These requirement correspond to necessities for size reduction, excellent frequency selectivity, good temperature stability of devices. $ZnWO_4$ ceramics could be sintered at low $1075^{\circ}C$, which was comparatively low temperature for microwave dielectrics. As a result, $ZnWO_4$ showed the dielectric constant of 13, quality factor($Q{\times}f_o$ value) of 22000 and 'temperature coefficient of resonant frequency$(\tau_f)$ of $-65{\pm}5ppm/^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.44 no.11
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• pp.597-606
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• 2007

With the advent of ubiquitous age, the high quality dielectric materials have been required for the wireless communications available to the millimeterwave as well as microwave frequencies. The utilizable region for the frequency has been expanding to the millimeter-wave region because of the shortage of radio frequency (RF) resources. These high frequencies would be expected for ultra high speed LAN, ETS and car anti-collision system on the intelligent transport system (ITS) and so on. Silicates are good candidates for microwave/millimeterwave dielectrics, because of their low dielectric constant ${\epsilon}_r$ and high quality factor (High Q). Forsterite ($Mg_2SiO_4$) is one of the silicates with low ${\epsilon}_r$ of 6.8 and Q f of 240000 GHz. In this paper, we reviewed following three categories for synthesis of forsterite: (1) Synthesis of high Q forsterite (2) Adjust the temperature coefficient of resonant frequency $TC_f$ (3) Diffusion of $SiO_{4^-}$ and Mg-ions on the formation of forsterite.

• Proceedings of the KIPE Conference
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• 2001.07a
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• pp.584-588
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• 2001

A conventional power supply to drive a microwave oven has ferro-resonant transformer and high voltage Capacitor(HVC). Though it is simple, transformer is bulky, heavy and has low-efficiency. To improve this defect a high frequency inverter type power supply has been investigated and developed in recent years. But, because of additional control circuit and switching device, inverter-type power supply is more expensive than conventional one. In this study, A new pulse power supply for Microwave Oven using novel HVC embedded high frequency transformer is proposed for down-sizing, cost reduction, and efficiency emprovement of Inverter type power supply. Also, equivalent circuit model is derived by impedance measurements. And the operation of proposed pulse power supply is verified by simulations and experimental results.