• 제목/요약/키워드: microwave frequency

검색결과 1,126건 처리시간 0.028초

Dielectric Properties of Agricultural Properties and Their Use in Moisture Sensing and Other Applications

  • Nelson, Stuart O.
    • 한국농업기계학회:학술대회논문집
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    • 한국농업기계학회 1996년도 International Conference on Agricultural Machinery Engineering Proceedings
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    • pp.293-304
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    • 1996
  • Historical interest in dielectric properties of agricultural products and definitions of dielectric terms and basic principles governing their influence on elelctromagnetic energy are presented briefly . The nature of dielectric properties variation with frequency, temperature , and product density is discussed, Graphical data on the dielectric properties of products are presented that illustrate the dependence of these properties on moisture content, frequency, temperature, and density. Applications microwave dielectric properties of agricultural products are cited that include radio-frequency (RF) and microwave heating for seed treatment, improvement of nutritional and keeping qualities of some products, and controlling insects in grain. Uses of dielectric properties for product quality measurement and the rapid determination of moisture content are described. Principle of moisture determination in bulk grain by RF and microwave measurements are briefly presented.

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고주파특성 측정을 통한 barium titanate의 주파수센서 및 온도센서 연구 (Microwave Characteristics of Barium Titanate for Frequency Sensor and Temperature Sensor)

  • 김진옥;한만흥
    • 센서학회지
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    • 제5권1호
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    • pp.9-14
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    • 1996
  • $WO_{3}$가 첨가된 $BaTiO_{3}$를 고상법으로 제작하여 상온에서 $160^{\circ}C$의 온도 범위와 300 kHz - 300 MHz의 주파수 범위에서 회로망분석기를 이용하여 2포트 S-파라메터 방법으로 고주파 저항, 리액턴스 및 임피던스를 측정하여 $130^{\circ}C$ 이하에서 주파수 및 온도센서로서의 가능성을 진단하였다.

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Inverter 구동 Microwave Oven용 HVC 내장형 고주파변압기의 해석 및 설계에 관한 연구 (A Study on Analysis and Design of HVC Embedded High Frequency Transformer for Microwave Oven)

  • 박강희;조준석;목형수;최규하
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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    • pp.293-296
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    • 2001
  • A conventional power supply to drive a microwave oven has ferro-resonant transformer and high voltage capacitor(HVC). Though it is simple, transformer is bulky, heavy and has low-efficiency. To improve this defect, a high frequency inverter type power supply has been investigated and developed in recent years. But, because of additional control circuit and switching device, inverter-type power supply is more expensive than conventional one. In this study, The design procedure of a novel HVC embedded high frequency transformer is proposed for down-sizing and cost reduction of Inverter-type power supply. Also, equivalent circuit mode] is derived by FEM analysis and impedance measurements. And the operation of proposed HVC embedded transformer is verified by simulations and experimental results.

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마이크로파 ZST 세라믹을 이용한 Helical Antenna 개발 (Development of Helical Antenna using Microwave ZST Ceramics)

  • 이종배;육영진;신호용;김형순;임종인
    • 한국세라믹학회지
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    • 제45권4호
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    • pp.208-213
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    • 2008
  • In this study, helical antenna with microwave ZST ceramics was designed using finite element method and developed. Studied parameters are relative dielectric constant of the dielectric core and the width of the conduction metal band of the antenna. As shown in the results, the center frequency of the antenna was decreased as the dielectric constant increased. Also beam width of the antenna increased as both the dielectric constant and the conduction band width increased. Based on the designed optimal shape, the manufactured antenna has the good beam width at center frequency 1.58 GHz.

BSST계 세라믹스의 BaO 조성비에 따른 마이크로파 유전특성 (Microwave dielectric properties of the BSST ceramics with BaO compositional ratio)

  • 박인길;정장호;이성갑;이영희
    • 대한전기학회논문지
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    • 제45권1호
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    • pp.81-85
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    • 1996
  • Microwave dielectric properties of 0.15(B $a_{x}$S $r_{0.05}$)O-0.15(S $m_{2}$(1-y)N $d_{2y}$) $O_{3}$-0.7Ti $o_{2}$(x=o.9~0.1[mol.], y=6[m/o]) ceramics were investigated with BaO compositional ratio. Sintered density and resistivity of specimens were independent on the BaO compositional ratio. In the specimen with x=0.975[mol.], dielectric constant, quality factor and temperature coefficient of resonant frequency had good values of 76.52, 3001(at 3[GHz]) and +0.71[ppm/.ceg. C], respectively. By comparing with the stoichiometric compositions of 78.14, 2938(at 3[GHz])+14.19[ppm/.ceg. C], dielectric constant and quality factor showed similar properties, but the temperature coefficient of resonant frequency was highly improved. (author). refs., figs., tabs.s.s.

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광대역의 우수한 이득평탄도를 갖는 V-밴드 전력증폭기 MMIC (V-Band Power Amplifier MMIC with Excellent Gain-Flatness)

  • 장우진;지홍구;임종원;안호균;김해천;오승엽
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2006년도 하계종합학술대회
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    • pp.623-624
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    • 2006
  • In this paper, we introduce the design and fabrication of V-band power amplifier MMIC with excellent gain-flatness for IEEE 802.15.3c WPAN system. The V-band power amplifier was designed using ETRI' $0.12{\mu}m$ PHEMT process. The PHEMT shows a peak transconductance ($G_{m,peak}$) of 500 mS/mm, a threshold voltage of -1.2 V, and a drain saturation current of 49 mA for 2 fingers and $100{\mu}m$ total gate width (2f100) at $V_{ds}$=2 V. The RF characteristics of the PHEMT show a cutoff frequency, $f_T$, of 97 GHz, and a maximum oscillation frequency, $f_{max}$, of 166 GHz. The gains of the each stages of the amplifier were modified to have broadband characteristics of input/output matching for first and fourth stages and get more gains of edge regions of operating frequency range for second and third stages in order to make the gain-flatness of the amplifier excellently for wide band. The performances of the fabricated 60 GHz power amplifier MMIC are operating frequency of $56.25{\sim}62.25\;GHz$, bandwidth of 6 GHz, small signal gain ($S_{21}$) of $16.5{\sim}17.2\;dB$, gain flatness of 0.7 dB, an input reflection coefficient ($S_{11}$) of $-16{\sim}-9\;dB$, output reflection coefficient ($S_{22}$) of $-16{\sim}-4\;dB$ and output power ($P_{out}$) of 13 dBm. The chip size of the amplifier MMIC was $3.7{\times}1.4mm^2$.

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Sidelobe Suppression Enhancement of Radiofrequency Photonic Filters via Time-to-frequency Mapping

  • Song, Min-Hyup
    • Journal of the Optical Society of Korea
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    • 제18권5호
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    • pp.449-452
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    • 2014
  • We present a multi-tap microwave photonic filter with high selectivity through applying time-to-frequency mapping and optical frequency comb shaping techniques. When arranged in the time-to-frequency mapping stage, by a Fourier transform, the deviation of the optical taps to the target profile is significantly reduced while maintaining the apodization profile, resulting in high sidelobe suppression in the filters. By applying a simple time-to-frequency mapping stage to the conventional optical frequency combs, we demonstrate a substantially enhanced (>10dB) sidelobe suppression, resulting in filter lineshapes exhibiting a significantly high (>40dB) main lobe to sidelobe suppression ratio. These results highlight the potential of the technique for implementation in various passband filters with high sidelobe suppression.

$ZnWO_4$ 세라믹의 마이크로파 유전특성 (Microwave Dielectric Properties of $ZnWO_4$ Ceramics)

  • 윤상옥;윤종훈;김대민;심상흥;강기성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.642-645
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    • 2002
  • Microwave dielectric properties of $ZnWO_4$ ceramic were investigated with calcination and sintering temperatures. The dielectric properties required for such application are high dielectric constant$(\varepsilon_r)$, high $Q{\times}f_o$ value and low temperature coefficient of resonant frequency$(\tau_f)$. These requirement correspond to necessities for size reduction, excellent frequency selectivity, good temperature stability of devices. $ZnWO_4$ ceramics could be sintered at low $1075^{\circ}C$, which was comparatively low temperature for microwave dielectrics. As a result, $ZnWO_4$ showed the dielectric constant of 13, quality factor($Q{\times}f_o$ value) of 22000 and 'temperature coefficient of resonant frequency$(\tau_f)$ of $-65{\pm}5ppm/^{\circ}C$.

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Synthesis of Forsterite with High Q and Near Zero TCf for Microwave/Millimeterwave Dielectrics

  • Ohsato, Hitoshi;Ando, Minato;Tsunooka, Tsutomu
    • 한국세라믹학회지
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    • 제44권11호
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    • pp.597-606
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    • 2007
  • With the advent of ubiquitous age, the high quality dielectric materials have been required for the wireless communications available to the millimeterwave as well as microwave frequencies. The utilizable region for the frequency has been expanding to the millimeter-wave region because of the shortage of radio frequency (RF) resources. These high frequencies would be expected for ultra high speed LAN, ETS and car anti-collision system on the intelligent transport system (ITS) and so on. Silicates are good candidates for microwave/millimeterwave dielectrics, because of their low dielectric constant ${\epsilon}_r$ and high quality factor (High Q). Forsterite ($Mg_2SiO_4$) is one of the silicates with low ${\epsilon}_r$ of 6.8 and Q f of 240000 GHz. In this paper, we reviewed following three categories for synthesis of forsterite: (1) Synthesis of high Q forsterite (2) Adjust the temperature coefficient of resonant frequency $TC_f$ (3) Diffusion of $SiO_{4^-}$ and Mg-ions on the formation of forsterite.

HVC 내장형 고주파변압기를 이용한 Microwave Oven용 펄스전원장치에 관한 연구 (A Study on Pulse Power Suppuy for Microwave Oven Using HVC Embedded High Frequency Transformer)

  • 박강희;조준석;정병환;목형수;박현빈
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2001년도 전력전자학술대회 논문집
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    • pp.584-588
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    • 2001
  • A conventional power supply to drive a microwave oven has ferro-resonant transformer and high voltage Capacitor(HVC). Though it is simple, transformer is bulky, heavy and has low-efficiency. To improve this defect a high frequency inverter type power supply has been investigated and developed in recent years. But, because of additional control circuit and switching device, inverter-type power supply is more expensive than conventional one. In this study, A new pulse power supply for Microwave Oven using novel HVC embedded high frequency transformer is proposed for down-sizing, cost reduction, and efficiency emprovement of Inverter type power supply. Also, equivalent circuit model is derived by impedance measurements. And the operation of proposed pulse power supply is verified by simulations and experimental results.

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