• Title/Summary/Keyword: microwave dielectric properties

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Dielectric Properties of Fresh Ginseng Determined by an Open-Ended Coaxial Probe Technique (수삼의 마이크로파 유전특성)

  • Hong, Seok-In;Lee, Boo-Yong;Park, Dong-June;Oh, Seung-Yong
    • Korean Journal of Food Science and Technology
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    • v.28 no.3
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    • pp.470-474
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    • 1996
  • The dielectric properties, dielectric constant (${\varepsilon}‘$) and loss factor (${\varepsilon}’$), of skin and pulp of fresh ginseng were measured from $25^{\circ}C$ to $67^{\circ}C$ using an open-ended coaxial probe technique for 915 MHz and 2450 MHz. Pulp and skin had dielectric constant of $30{\sim}64$ and loss factor between 10 and 20, each variable having a respective frequency dependence typical of materials with high water content. Although the loss factor was nearly constant, the dielectric constant increased as moisture content increased. The dielectric constant of ginseng pulp increased as temperature increased (temperature ${\leq}56^{\circ}C$), but any significant differences were not found in skin dielectric properties. Penetration depth for fresh ginseng were about 2 cm at 91.5 MHz and 1cm at 2450 MHz.

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Low Temperature Sintering of $Mg_{3-x}Co_x(VO_4)_2$ Microwave Dielectric Ceramics for LTCC Applications (저온소결 $Mgx_{-3}Cox(VO_4)_2$ 세라믹스의 마이크로파 유전특성)

  • Lee, Ji-Hun;Bang, Jae-Cheol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.220-223
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    • 2005
  • We studied the effect of composition, processing, and sintering temperature on the microwave properties of $Mg_{3-x}Co_x(VO_4)_2$ system which is applicable to LTCC. When $Mg_{3-x}Co_x(VO_4)_2$ was fabricated by solid-state reaction process and sintered at the temperature range of $800\sim910^{\circ}C$, it was found that the optimum composition of x was 2 at which microwave properties of 910$^{\circ}C$-sintered one were as follows: $Q\times f_0\sim55,200GHz$ and $\varepsilon_r\sim10$. When $(MgCo_2)(VO_4)_2$ was fabricated by sol-gel process and sintered at 800$^{\circ}C$, $Q\timesf_0$was 34,400GHz which is much high compared to those fabricated by solid-state reaction process at the same sintering temperature.

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Physical and Microwave Dielectric Properties of the MgO-SiO2 System

  • Yeon, Deuk-Ho;Han, Chan-Su;Key, Sung-Hoon;Kim, Hyo-Eun;Kang, Jong-Yun;Cho, Yong-Soo
    • Korean Journal of Materials Research
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    • v.19 no.10
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    • pp.550-554
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    • 2009
  • Unreported dielectrics based on the binary system of MgO-SiO$_2$ were investigated as potential candidates for microwave dielectric applications, particularly those demanding a high fired density and high quality factors. Extensive dielectric compositions having different molar ratios of MgO to SiO$_2$, such as 2:1, 3:1, 4:1, and 5:1, were prepared by conventional solid state reactions between MgO and SiO$_2$. 1 mol% of V$_2$O$_5$ was added to aid sintering for improved densification. The dielectric compositions were found to consist of two distinguishable phases of Mg$_2$SiO$_4$ and MgO beyond the 2:1 compositional ratio, which determined the final physical and dielectric properties of the corresponding composite samples. The increase of the ratio of MgO to SiO$_2$ tended to improve fired density and quality factor (Q) without increasing grain size. As a promising composition, the 5MgO.SiO$_2$ sample sintered at 1400 $^{\circ}C$ exhibited a low dielectric constant of 7.9 and a high Q $\times$ f (frequency) value of $\sim$99,600 at 13.7 GHz.

Microwave Dielectric properties of (1-x)$LaAlO_3-xCaTiO_3$ ((1-x)$LaAlO_3-xCaTiO_3$계의 마이크로파 유전 특성)

  • Yeo, Dong-Hun;Yoon, Seok-Jin;Kim, Hyun-Jae;Song, Joon-Tae
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1031-1033
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    • 1995
  • The microwave dielectric properties of (1-x)$LaAlO_3-xCaTiO_3$ system were investigated. As the amount of $LaAlO_3$ increased, the value of the unloaded Q increased, but the dielectric constant(${\varepsilon}_r$) decreased. The temperature coefficient of resonant frequency(${\tau}_f$) of $5ppm/^{\circ}C$ was obtained from the composition of $0.35LaAlO_3-0.65CaTiO_3$ in which the values of ${\varepsilon}_r$ and $Q{\cdot}f_o$ were 42 and 32,500, respectively.

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Microwave Dielectric Properties of CaO Added $(Ba, Pb)O-Nd_2O_3-TiO_2$ Ceramics (CaO첨가$(Ba, Pb)O-Nd_2O_3-TiO_2$ 세라믹스의 고주파 유전특성)

  • Yoon, Sang-Ok;Choi, Whan;Kim, Kyung-Yong
    • Journal of the Korean Ceramic Society
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    • v.30 no.2
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    • pp.101-106
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    • 1993
  • Effects of CaO on microwave dielectric properties of (Ba, Pb)O-Nd2O3-TiO2 ceramic ystem were investigated. As the content of CaO increases, the sintered bulk density decreases due to the decrease of sinterability. However, with increasing the sintering tmperature, the relative dielectric constants increases. This has been attributed on the formation of the 2nd phase inclusion, TiO2(rutile). The Q values increase due to the compensation effect of Ca ions up to 1 wt%, and then decrease due to the interfacial relaxation effects. The temperature coefficient of resonance frequency increases to a positive direction with increasing the amounts of CaO.

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Microwave Dielectric Properties of the BSST Ceramics doped with Nd. (Nd가 첨가된 BSST 세라믹스의 마이크로파 유전 특성)

  • Park, In-Gil;Lee, Young-Hie;Ryu, Ki-Won;Bae, Seon-Gi
    • Proceedings of the KIEE Conference
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    • 1994.07b
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    • pp.1254-1256
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    • 1994
  • 0.15$(Ba_{0.95}Sr_{0.05})$O-0.15$(Sm_{2(1-x)}Nd-{2x})O_3-0.7TiO_2 (x=0{\sim}10[m/o])$ ceramics were fabricated by mixed-oxide method. Microwave dielectric properties was investigated with the contents of $Nd_2O_3$. Increasing the contents of $Nd_2O_3$ from 0 to 6[m/o], sintered density was increased 5.53 to $5.68[g/ cm^3]$. In the specimen with contents of $Nd_2O_3$(6[m/o]), dielectric content was maximum value of 78.14 and decreased with increasing the contents of $Nd_2O_3$. Quality factor was increased with the contents of $Nd_2O_3$.

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Annealing Effect on the Microwave Dielectric Properties of the BaO-SmS12TOS13T-TiOS12T Ceramics (BaO-Sm2O3-TiO2 세라믹스의 마이크로파 유전특성에 미치는 어닐링 효과)

  • Lee, Geun-Ill;Chung, Jang-Ho;Lee, Young-Hie
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.43 no.5
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    • pp.789-794
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    • 1994
  • In this study, the structural and microwave dilelectric properties of 0.15BaO-0.15SmS12TOSI3T-0.7TiOS12T ceramics with sintering and annealing conditions were investigated. In the specimen sintered at 1350 [$^{\circ}C$], dielectric constant and quality factor were good values of 80.19,2006 (fS10T=4.6851[GHz]). To improve the $\tau$S1fT of specimen which was manufactured by the optimumsintering condition (1350[$^{\circ}C$],2[Hr.]), annealed from 2[hr.] to 16[hr.] at the annealing temperature of 1200 [$^{\circ}C$]. Increasing the annealing time, dielectric constant was almost constant and quality factor was increased. In the specimen of 4[hr.] annealed, the temperature coefficient of resonant frequency was minimum value, and increased with increasing the annealing time.

A Study on the Microwave Dielectric Properties of A1$_2$O$_3$ Ceramics Resonator added with Impurities (불순물 첨가에 따른 A1$_2$O$_3$ 세라믹 공진기의 마이크로파 유전특성에 관한 연구)

  • 이문기;박인길;류기윈;이성갑;이영희
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.64-67
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    • 1997
  • Microwave dielectric properties of A1$_2$O$_3$ ceramics resonator were investigated with impurity addition. Increasing the contents of Bi$_2$O$_3$Q-value and Q $\times$ f were increased. In the specimen with the content of Bi$_2$O$_3$(0.3wt%), dielectric constant, quality factor and temperature coefficient of resonant frequency(TCRF, $\tau$$_{f}$) had a good values of 10.76,23,253(at 9.68[GHz]) and -39.09(ppm/$^{\circ}C$), respectively. The TCRF value was decreased with MnO$_2$ and increased with Sm$_2$O$_3$. La$_2$O$_3$.>.

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Low Temperature Sintering and Microwave Dielectric Properties of 0.85CaWO4-0.15LnNbO4 (Ln = La, Sm) Ceramics

  • Kim, Su-Jung;Kim, Eung-Soo
    • Korean Journal of Materials Research
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    • v.17 no.8
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    • pp.442-446
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    • 2007
  • Microwave dielectric properties of $0.85CaWO_4-0.15LnNbO_4$ (Ln = La, Sm) ceramics were investigated as a function of the sintering temperature and $Li_2WO_4$ content from 0.8 wt.% to 1.5 wt.%. A single phase with tetragonal scheelite structure was obtained at a given composition ranges. For the specimens with $Li_2WO_4$, the sintering temperature could be effectively reduced from $1150^{\circ}C$ to $900^{\circ}C$ due to the enhancement of sinterability. Dielectric constant (K) of the specimens with $LaNbO_4$ and $SmNbO_4$ was increased with the increase of sintering temperature and/or $Li_2WO_4$ content. However, K of the specimens with $LaNbO_4$ was higher than that of $SmNbO_4$ due to the larger dielectric polarizability $(\alpha)$ of $LaNbO_4$ ($18.08{\AA}$) than that of $SmNbO_4$ ($16.75{\AA}$). With an increase of $Li_2WO_4$ content, Qf value of the specimens with $SmNbO_4$ was decreased, while that of the specimens with $LaNbO_4$ was increased. Temperature coefficient of resonant frequency (TCF) was increased with the increase of $Li_2WO_4$ content.

Phase Evolution, Microstructure and Microwave Dielectric Properties of Zn1.9-2xLixAlxSi1.05O4 Ceramics

  • Kim, Yun-Han;Kim, Shin;Jeong, Seong-Min;Kim, So-Jung;Yoon, Sang-Ok
    • Journal of the Korean Ceramic Society
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    • v.52 no.3
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    • pp.215-220
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    • 2015
  • Phase evolution, microstructure, and microwave dielectric properties of $Li_2O$ and $Al_2O_3$ doped $Zn_{1.9}Si_{1.05}O_4$, i.e., $Zn_{1.9-2x}Li_xAl_x-Si_{1.05}O_4$, ceramics (x = 0.02 ~ 0.10) were investigated. The ceramics were densified by $SiO_2$-rich liquid phase composed of the Li-Al-Si-O system, indicating that doped Li and Al contributed to the formation of the liquid. As the secondary phase, ${\beta}$-spodumene solid solution with the composition of $LiAlSi_3O_8$ was precipitated from the liquid during the cooling process. The dense ceramics were obtained for the specimens of $$x{\geq_-}0.06$$ showing the rapid densification above $1000^{\circ}C$, implying that a certain amount of liquid is necessary to densify. The specimen of x = 0.06 sintered at $1050^{\circ}C$ exhibited good microwave dielectric properties; the dielectric constant and the quality factor ($Q{\times}f_0$) were 6.4 and 11,213 GHz, respectively.