• 제목/요약/키워드: microwave dielectric

검색결과 734건 처리시간 0.022초

저유전율을 갖는 $Mg_2$$SiO_4$-$ZnAl_2$$O_4$계 세라믹스의 $CaTiO_3$첨가에 따른 고주파 유전특성 (Effect of $CaTiO_3$Additions on the Microwave Dielectric Properties of $Mg_2$$SiO_4$-$ZnAl_2$$O_4$Ceramics with Low Dielectric Constant)

  • 박일환;김현학;김경용;김병호
    • 한국전기전자재료학회논문지
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    • 제13권12호
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    • pp.1017-1024
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    • 2000
  • Effect of the microwave dielectric properties and the microstructure on a mole fraction(x=0.1~0.9) of (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ ceramics was investigated. When (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$(x=0.1~0.9) ceramics were sintered at 130$0^{\circ}C$, 135$0^{\circ}C$ and 140$0^{\circ}C$ for 2hr, the microwave dielectric properties were obtained $\varepsilon$r=6.8~8.3, Q.f$_{0}$=36000~77600. On the other hand, the temperature coefficients of resonant frequency($\tau$$_{f}$) were obtained in the properties of -62ppm/$^{\circ}C$ to -49ppm/$^{\circ}C$. In order to adjust the temperature coefficient of resonant frequency($\tau$$_{f}$), CaTiO$_3$was added in (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ceramics. 0.7Mg$_2$SiO$_4$-0.2ZnAl$_2$O$_4$-0.1CaTiO$_3$ceramics sintered at 135$0^{\circ}C$ for 2hr showed the excellent microwave dielectric properties of $\varepsilon$r=7.7, Q.f$_{0}$=32000, and $\tau$$_{f}$=-7.9 ppm/$^{\circ}C$.EX>.>.EX>.

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Ca[Ti1-x(Ni1/3Nb2/3)x]O3 세라믹스의 저온소결 및 마이크로파 유전특성 (Low Temperature Sintering and Microwave Dielectric Properties of Ca[Ti1-x(Ni1/3Nb2/3)x]O3 Ceramics)

  • 이영규;김효태;남중희;김종희;백운규
    • 한국세라믹학회지
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    • 제43권1호
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    • pp.55-61
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    • 2006
  • The microwave dielectric properties and low temperature sintering of $Ca[Ti_{1-x}(Ni_{1/3}Nb_{2/3})_x]O_3$ system were investigated at the sintering temperature $1,200\~1,350^{\circ}C$. The density and quality factors $(Q{\times}f)$ increased while dielectric constants slightly decreased with the decrease of Ti. The dielectric constant, quality factor, and temperature coefficient of resonance frequency $(\tau_f)$ were 64, 17,000 GHz, and $-9.1\;ppm/^{\circ}C$ respectively, when $CaTi_{1/2}(Ni_{1/3}Nb_{2/3})_{1/2}O_3$ ceramics were sintered at $1,300^{\circ}C$ for 4 h. $2Li_2O-B_2O_3$ was added to $CaTi_{1/2}(Ni_{1/3}Nb_{2/3})_{1/2}O_3$ to decrease the sintering temperature for LTCC application. The microwave dielectric properties of the samples sintered at $925^{\circ}C$ for 2 h with the addition of $6\;wt\%\;2Li_2O-B_2O_3$ were $\varepsilon_r=48.7,\;Q{\times}f=8,460\;GHz$, and $\tau_f=+5.6ppm/^{\circ}C$. Compatibility test of the composition with silver electrode shows no reaction with silver electrode, implying the feasibility as a high-K LTCC material.

$Bi_2O_3$ 첨가에 의한 Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$$O_{3-{\delta}}$ 세라믹스의 마이크로파 유전 특성 (Microwave Dielectric Properties of Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$ with $Bi_2O_3$ Additives)

  • 하종윤;최지원;이동윤;윤석진;최두진;김현재
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.131-134
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    • 2002
  • The effect of the addition on the densification, low temperature sintering, and microwave dielectric properties of the Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$/(CLNT) was investigated. $Bi_2O_3$ additives improved the dencification and reduced the sintering temperature from $1150^{\circ}C$ to $900^{\circ}C$ of CLNT microwave dielectric ceramics. As increasing $Bi_2O_3$ contents, the dielectric constants and bulk density were increased. The quality factor, however, was decreased slighty. The temperature coefficients of the resonant frequency shifted positive value as increasing $Bi_2O_3$ contents. The dielectric properties of Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$ and Ca[($Li_{1/3}Nb_{2/3}$)$_{0.8}Ti_{0.2}$]$O_{3-{\delta}}$ with 5wt% $Bi_2O_3$ sintered at $900^{\circ}C$ for 3h were $\varepsilon_{r}$=20, 35 Q.$f_{0}$=6500, 11,000 GHz, $\tau_{f}$=4, 13 ppm/$^{\circ}C$, respectively.

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결정 구조에 따른 Ba(Mg1/3Nb2/3)O3-La(Mg2/3Nb1/3)O3세라믹스의 마이크로파 유전 특성 (Microwave Dielectric Characteristics of Ba(Mg1/3Nb2/3)O3-La(Mg2/3Nb1/3)O3 Ceramics with Crystal Structure)

  • 백종후;임은경;이미재;지미정;최병현;김세기
    • 한국전기전자재료학회논문지
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    • 제18권1호
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    • pp.30-37
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    • 2005
  • The microwave dielectric properties and their related structural characteristics in solid solutions of (1-$\chi$) Ba($Mg_{1/3}$Nb$_{2/3}$) $O_3$-$\chi$La(Mg$_{2/3}$Nb$_{1}$3) $O_3$(BLMN) have been investigated by measuring the dielectric constant($\varepsilon$r), Q value and temperature coefficient of resonant frequency($\tau$f) and by observing the crystal structure using high resolution transmission electron microscopy (HRTEM). Microwave dielectric properties showed characteristic features for specific composition. Dielectric constant($\varepsilon$$_{r}$) showed maximum value at the composition which corresponds to the phase boundary between 1 : 2 ordered and 1 : 1 ordered structure. The increase in $\varepsilon$$_{r}$ may be caused by the rattling of ions by incorporating smaller ions and the disordered structure. The variation of temperature coefficient of resonant frequency($\tau$$_{f}$) was investigated in terms of oxygen octahedra tilting.dra tilting.

$Al_2O_3$ 첨가가 (Ba,Ca,Mg)-$Nd_2O_3-TiO_2+10wt%Bi_2O_3$ 세라믹의 마이크로파 유전특성에 미치는 영향 (Effect of $Al_2O_3$ Additives on Microwave Dielectric Properties of (Ba,Ca,Mg)-$Nd_2O_3-TiO_2+10wt%Bi_2O_3$ Ceramics)

  • 최지원;강종윤;하종윤;윤석진;김현재;정현진;윤기현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.653-656
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    • 1999
  • Effect of $Al_2O_3$ Additives on Microwave Dielectric Properties of $0.15(Ba_{0.85}Ca_{(0.15-y)}Mg_y)$-0.125 $Nd_2O_3-0.60TiO_2+10wt%Bi_zO_3$ (y=0.05, 0.08) Ceramics was investigated. To control of $\tau\;{f}$ on microwave dielectric properties of $0.15(Ba_{0.85}Ca_{(0.15-y)}Mg_y)$-0.125 $Nd_2O_3-0.60TiO_2+10wt%Bi_zO_3$ ceramics $Al_2O_3$ was doped in the composition range of 0 to 0.15 wt%. As a result, dielectric constant was decreased from 94 to 80 but $Q\cdot{f}_0$ value was increased from 4980 to 5210 GHz and temperature coefficient of resonant frequency can be controlled from +9 to -10$ppm^\circ{C}$ as an increase of$Al_2O_3$ doping concentration. Especially, a new microwave dielectric material having $\varepsilon\;_r=84,\;Q\cdot{f}_0=5120\;GHz\;and\;\tau_f=0\;ppm/^\circ{C}$ was obtained at $Al_2O_3$ doping concentration of 0.08 wt%.

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(1-X)Ba$Mg_{1/3}Ta_{2/3}O_{3}-xBa_Co_{1/3}Nb_{2/3})O_{3}(x=0.25~0.5)$세라믹스의 마이크로파 유전특성 (The Microwave Dielectric Properties of (1-x)Ba$Mg_{1/3}Ta_{2/3}O_{3}-xBa_Co_{1/3}Nb_{2/3})O_{3}(x=0.25~0.5)$ Ceramics)

  • 황태광;김강;임성수;이성갑;이영희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.221-224
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    • 2000
  • The microwave dielectric properties of Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$-xBa(Co$_{1}$3/Nb$_{2}$3/)O$_3$[BMT-BCN] ceramics were investigated. The specimens were prepared by the conventional mixed oxide method. It was found that Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$ and Ba(Co$_{1}$3/Nb$_{2}$3/)O$_3$ formed a solid solution with complex perovskite structure. Increasing the BCN content, dielectric constant was increased, but temperature coefficient of resonant frequency was decreased. In the range of x$\geq$0.4, dielectric constant was about 30. 0.55BMT-0.45BCN ceramics showed excellent microwave dielectric properties with $\varepsilon$$_{r}$=30.84, Q$\times$f$_{0}$=75,325[GHz] and $\tau$$_{f}$=-2.9015[ppm/$^{\circ}C$].X>].

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$ZnWO_4$ 소결특성 및 고주파 유전특성 (Sintering and Microwave Dielectric Properties of $ZnWO_4$)

  • 이경호;김용철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.386-389
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    • 2001
  • In this study, development of a new LTCC material using non-glassy system was attempted with repsect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, $ZnWO_4$ was turned out the suitable LTCC material. $ZnWO_4$ can be sintered up to 98% of full density at $1050^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and $-70ppm/^{\circ}C$, respectively. In order to modify the dielectric properties and densification temperature, $B_{2}O_{3}$ and $V_{2}O_{5}$ were added to $ZnWO_4$. 40 mol% $B_{2}O_{3}$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to $-7.6ppm/^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of $V_{2}O_{5}$ in $ZnWO_{4}-B_{2}O_{3}$ system enhanced liquid phase sintering. 0.1 wt% $V_{2}O_{5}$ addition to the $0.6ZnWO_{4}-0.4B_{2}O_{3}$ system, reduced the sintering temperature down to $950^{\circ}C$. Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and $-21.6ppm/^{\circ}C$, respectively.

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$ZnWO_4$ 소결특성 및 고주파 유전특성 (Sintering and Microwave Dielectric Properties of $ZnWO_4$)

  • 이경호;김용철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.386-389
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    • 2001
  • In this study, development of a new LTCC material using non-glassy system was attempted with respect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, ZnWO$_4$ was turned out the suitable LTCC material. ZnWO$_4$ can be sintered up to 98% of full density at 105$0^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and -70ppm/$^{\circ}C$, respectively In order to modify the dielectric properties and densification temperature, B$_2$O$_3$ and V$_2$O$_{5}$ were added to ZnWO$_4$. 40 mol% B$_2$O$_3$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to -7.6ppm/$^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of V$_2$O$_{5}$ in ZnWO$_4$-B$_2$O$_3$ system enhanced liquid phase sintering. 0.lwt% V$_2$O$_{5}$ addition to the 0.6ZnWO$_4$-0.4B$_2$O$_3$ system, reduced the sintering temperature down to 95$0^{\circ}C$ Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and -21.6ppm/$^{\circ}C$ respectively.ively.

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Ba(Mg,Co)(Ta,Nb)$O_3$ 세라믹의 마이크로파 유전특성에 관한 연구 (A study on the Microwave Dielectric Properties of Ba(Mg,Co)(Ta,Nb)$O_3$ Ceramics)

  • 이문기;정장호;배선기;이영희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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    • pp.752-754
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    • 1998
  • $Ba(Mg_{(1-x)}Co_x)_{1/3}(Ta_{(1-x)}Nb_x)_{2/3}O_3$ ($x=0.3{\sim}0.6$) ceramics were prepared by the conventional mixed oxide method. The sintering temperature and time were of $1400{\sim}1575[^{\circ}C]$,5[hr.] respectively. The structural and microwave dielectric Properties were investigated with composition ratio and sintering temperature. And then the application for the microwave dielectric resonator was investigated.

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고주파용 회로기판을 위한 PTEE(Polytetrafluoroethylene) 복합체의 제조 및 유전 특성 (Preparation and Dielectric Characteristics of PTEE(Polytetrafluoroethyl one) Composites for Microwave Circuit Board)

  • 윤기현;정도환;양병덕;장재혁;김종희
    • 한국세라믹학회지
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    • 제40권8호
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    • pp.735-738
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    • 2003
  • 고주파용 회로기판으로 사용하는 PTFE 복합체를 woven glass fiber를 사용하여 제조하였다. 유전상수는 PTFE 분산액에 woven glass fiber를 함침하는 횟수 증가에 따라 감소하는 특성을 나타내었으며, 3회 함침 횟수부터는 변화율이 감소하였는데, 이것은 PTFE 미세분말이 woven glass fiber의 기공과 굴곡 사이를 충분히 채우기 때문이다. 또한 함침 횟수 증가에 따라 PTFE의 비율이 증가하면서 유전 상수가 감소하여 회로 기판의 전파 전송속도는 증가하였다.