• 제목/요약/키워드: micron size

검색결과 262건 처리시간 0.021초

양극 활물질의 입도에 따른 열전지 출력 특성 연구 (Effect of Particle Size of Cathode Materials on Discharge Properties of Thermal Batteries)

  • 이정민
    • 한국전기전자재료학회논문지
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    • 제27권6호
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    • pp.399-406
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    • 2014
  • Thermal batteries are used for military power sources that require robustness and long storage life such as missiles and torpedoes. $FeS_2$ powder is currently used for cathode materials because of its high specific energy density, environmental non-toxicity and low cost. However, large particle size of conventional $FeS_2$ has been deterred its possible application for higher power thermal batteries. In order to improve the power density, high energy ball milling of $FeS_2$ has been introduced to crush the micron-sized $FeS_2$. Discharge characteristics of the single cells fabricated with nano-materials and conventional $FeS_2$ powder were evaluated.

Fabrication of Three-Dimensional Reflective White Pattern using Dry-Film Resist

  • Jun, Hwa Joon;Na, Dae Gil;Kwon, Young Hoon;Kwon, Jin Hyuk
    • Journal of the Optical Society of Korea
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    • 제19권1호
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    • pp.80-83
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    • 2015
  • White reflective patterns are very difficult to fabricate, due to the scattering and reflection of light, especially when the pattern size goes down to micron size. A reflective white barrier structure of height $50{\mu}m$ and width $80{\mu}m$ was fabricated using dry-film resist as an intermediate reverse pattern. The reverse dry-film resist pattern was coated with an $SiO_2$ layer by sputtering, to protect the resist from chemical attack by the radical molecules in UV white resin. The UV white resin was applied on the dry-film resist pattern and then cured with ultraviolet light. The fine three-dimensional reflective patterns were finished by removing the dry-film resist.

폐슬러지 Si 분말을 이용한 SiC 제조 (SiC Synthesis by Using Sludged Si Power)

  • 최미령;김영철;장영철
    • 마이크로전자및패키징학회지
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    • 제10권3호
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    • pp.67-71
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    • 2003
  • 실리콘 주괴(ingot)에서 실리콘 웨이퍼를 제조할 때 사용되는 슬러리는 SiC 연마재와 절삭유를 포함한다. 실리콘 웨이퍼 제조 시 생긴 폐슬러지에서 SiC 연마재와 절삭유는 분리되어 재활용된다. 본 연구는 폐슬러지 Si 분말에 C분말을 혼합하여 SiC를 합성하는 것에 관한 것이다. 다양한 크기의 SiC 분말과 휘스커가 제조되었으며 기존의 휘스커의 크기보다 작은 나노미터 크기의 휘스커도 발생하였다. 일반적으로 휘스커는 금속 불순물을 첨가하여 제조되는데, 본 연구에서 나노미터 크기의 휘스커 발생은 폐슬러지에 첨가되어있는 미세한 크기의 금속불순물의 영향으로 판단된다.

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PLA법에 의한 Si 미립자 제작 (Fabrication of various Si particle by Pulsed Laser Ablation)

  • 김민성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.121-125
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    • 2001
  • We study the feasibility of synthesizing Si particles using PLA method. In the previous studies, it was possible to control the size of Si nanoparticles by the He gas pressure. In this study, we fabricated sub-micron size Si particles with various shapes such as conical, hexagonal, and ring by controlling not only the ambient gas pressure but also the laser energy density. Furthermore, we found that the conical Si particles were uniform-sized and had step shape when observed from FE-SEM and AFM. The conical Si particle has the same crystal structure as the bulk single crystalline Si by the analysis of the Raman scattering. It is shown that the relationship between the laser energy density and the He gas pressure inside the chamber affects the shape of the Si particle.

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Nanohole Fabrication using FIB, EB and AFM for Biomedical Applications

  • Zhou, Jack;Yang, Guoliang
    • International Journal of Precision Engineering and Manufacturing
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    • 제7권4호
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    • pp.18-22
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    • 2006
  • Although many efforts have been made in making nanometer-sized holes, there is still a major challenge in fabricating individual single-digit nanometer holes in a more controllable way for different materials, size distribution and hole shapes. In this paper we describe our efforts to use a top down approach in nanofabrication method to make single-digit nanoholes. There are three major steps towards the fabrication of a single-digit nanohole. 1) Preparing the freestanding thin film by epitaxial deposition and electrochemical etching. 2) Making sub-micro holes ($0.2{\mu}\;to\;0.02{\mu}$) by focused ion beam (FIB), electron beam (EB), atomic force microscope (AFM), and others methods. 3) Reducing the hole size to less than 10 nm by epitaxial deposition, FIB or EB induced deposition and micro coating. Preliminary work has been done on thin films (30 nm in thickness) preparation, sub-micron hole fabrication, and E-beam induced deposition. The results are very promising.

Conversion of Carbon Fiber into Silicon Carbide Fiber by Pack-Cementation

  • Joo, Hyeok-Jong;Kim, Jung-Il;Lee, Jum-Kyun
    • Carbon letters
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    • 제1권1호
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    • pp.12-16
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    • 2000
  • Carbon fiber was reacted with gaseous silicon monoxide which is produced from pack-powder mixture at elevated temperature. As a result of the reaction, two kinds of SiC fiber were obtained. The first one was SiC fibers which were converted from carbon fiber. The fiber is constituted with polycrystal like fine grains or monolithic crystals that have a size from sub-micron to $10\;{\mu}m$. Their size depends on the temperature during the conversion reaction. The second one was ultra-fine SiC fibers that were found on the surface of the converted SiC fibers. The ultra-fine fibers have diameters from 0.08 to $0.2\;{\mu}m$ and their aspect ratio were larger than 100. The chemical composit ion of the ultra-fine fibers was analyzed using an Auger electron spectroscopy. In result, the fibers consist of 51% silicon, 38% carbon and 11% oxygen by weight.

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PLA법에 의한 Si 미립자 제작 (Fabrication of various Si particle by Pulsed Laser Ablation)

  • 김민성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.121-125
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    • 2001
  • We study the feasibility of synthesizing Si particles using PLA method. In the previous studies, it was possible to control the size of Si nanoparticles bythe He gas pressure. In this study, we fabricated sub-micron size Si particles with various shapes such as conical, hexagonal, and ring by controlling not only the ambient as pressure but also the laser energy density. Furthermore, we found that the conical Si particles were uniform-sized and had step shape when observed from FE-SEM and AFM. The conical Si particle has the same crystal structure as the bulk single crystalline Si by the analysis of the Raman scattering. It is shown that the relationship between the laser energy density and the He gas pressure inside the chamber affects the shape of the Si particle.

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입자 석션유동에 따른 레이저 표면가공의 마이크로 흄 오염입자 산포 특성 해석연구 (Numerical Simulation on Dispersion of Fume Micro-Particles by Particle Suction Flows in Laser Surface Machining)

  • 김경진
    • 반도체디스플레이기술학회지
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    • 제22권4호
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    • pp.1-6
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    • 2023
  • In CO2 laser surface machining of plastic films in modern display manufacturing, scattering of fume particles could be a major source of well-recognized film surface contamination. This computational fluid dynamics research investigates the suction air flow patterns over a film surface as well as the dispersion of micron-sized fume particles with low-Reynolds number particle drag model. The numerical results show the recirculatory flow patterns near laser machining point on film surface and also over the surface of vertical suction slot, which may hinder the efficient removal of fume particles from film surface. The dispersion characteristics of fume particles with various particle size have been tested systematically under different levels of suction flow intensity. It is found that suction removal efficiency of fume particles heavily depends on the particle size in highly nonlinear manners and a higher degree of suction does not always results in more efficient particle removal.

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응축 증발법을 통한 서브마이크론 입자의 단극하전 특성 (Characteristics of Unipolar Charging of the Submicron Particles by the Condensation-Evaporation Method)

  • 최영주;김상수
    • 대한기계학회논문집B
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    • 제30권2호
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    • pp.186-192
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    • 2006
  • We applied a new charging system using the condensation and evaporation method to charge the submicron particles with a uniform charging performance. The monodispersed NaCl submicron particles were condensed by n-butanol vapor and grew up to micron droplets with a same size, regardless of their initial size. Those condensed droplets were charged in an indirect corona charger. The indirect corona charger consisted of the ion generation zone and the particle charging zone. In the ion generation zone, Ions were generated by corona discharge and some of them moved into the particle charging zone by a carrier gas and mixed with the condensed droplet. And finally, the charged and condensed droplets dried through an evaporator to shrink to their original size. The average charge and penetration rate of the particles before and after evaporation were measured by CPC and aerosol electrometer and compared with those of a conventional corona charger. The results showed that the average charge was $5\~7$ charges and the penetration rate was over $90\%$, regardless of the initial particle size.

저압 분무열분해법에 의해 합성된 나노 크기의 코발트 산화물 입자의 특성 (The Characteristics of Nano-sized Cobalt Oxide Particles Prepared by Low Pressure Spray Pyrolysis)

  • 주서희;김도엽;강윤찬
    • 한국재료학회지
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    • 제16권9호
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    • pp.538-542
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    • 2006
  • Nano-sized cobalt oxide powders were prepared by low pressure spray pyrolysis process. The precursor powders obtained by low pressure spray pyrolysis process from the spray solution with ethylene glycol had several microns size and hollow structure. The precursor powders obtained from the spray solution with optimum concentration of ethylene glycol formed the nano-sized cobalt oxide powders with regular morphology after post-treatment without milling process. On the other hand, the cobalt oxide powders obtained from the spray solution without ethylene glycol had submicron size and spherical shape before and after posttreatment. The mean size of the cobalt oxide powders formed from the spray solution with concentration of ethylene glycol of 0.7M was 180 nm after post-treatment at temperature of $800^{\circ}C$. The mean size of the powders could be controlled from several tens nanometer to micron sizes by changing the post-treatment temperatures in the preparation of cobalt oxide powders by low pressure spray pyrolysis process.