• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.42-47
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• 2000

The amorphous vanadium oxide thin films for thin-film rechargeable lithium batteries were fabricated by r.f. reactive sputtering at room temperature. As the experimental parameter, oxygen partial pressure was varied during sputtering. At high oxygen partial pressures(>30%), the as-deposited films, constant current charge/discharge characteristics were carried out in 1M $LiPF_6$, EC:DMC+1:1 liquid electrolyte using lithium metal as anode. The specific capacity of amorphous $V_2O_5$ after 200cycles of operation at room temperature was higher compared to crystalline $V_2O_5$. The amorphous vanadium oxide thin film and crystalline film showed about 60$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$ and about 38$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$, respectively. These results suggest that the battery capacity of the thin film vanadium oxide cathode strongly depends on the crystallinity.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.05a
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• pp.18-22
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• 2003

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by grinding, lapping and polishing. The surfaces of sapphire wafers were mechanically affected by residual stress and surface default. This mechanical stress and strain can be cured by thermal anneal ing process. The sapphire crystalline wafers were annealed at $1100~1400^{\circ}C$ and then characterized by double crystal X-ray diffraction. The sample showed good quality of crystalline wafer surface wi th full width at hal f maximum of 16 arcsec for the 4-hour heat-treatment at $1300^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.53 no.2
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• pp.227-233
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• 2016

In order to make a highly ordered three-dimensional porous structure of titania ceramics, porogen beads of PS [Polystyrene] and PMMA [poly(methylmetacrylate)] were prepared by emulsion polymerization using styrene monomer and methyl methacrylate monomer, respectively. The uniform beads of PS or PMMA latex were closely packed by centrifugation as a porogen template for the infiltration of titanium butoxide solution. The mixed compound of PS or PMMA with titanium butoxide was dried and the dry compacts were calcined at $450^{\circ}C-750^{\circ}C$ according to the firing schedule to prepare micro- and meso- structures of polycrystalline titania with monodispersed porosity. Inorganic frameworks composed of $TiO_2$ were formed and showed a three Dimensionally Ordered Microstructure [3DOM] of $TiO_2$ ceramics. The pulverized particles of the $TiO_2$ ceramic skeleton were characterized using XRD analysis. A monodispersed crystalline micro-structure with micro/meso porosity was observed by FE-SEM with EDX analysis. The 3DOM $TiO_2$ skeleton showed opalescent color tuning according to the direction of light.

• Journal of the Korean Wood Science and Technology
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• v.11 no.1
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• pp.5-11
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• 1983

This paper aims at gaining the informations atout the fibril angle at secondary walls of tracheids. The test specimens were taken from disks on stem wood of "Pinus koraiensis Sieb. et zucc". The method of measuring the fibirl angle was selected so-called "iodine method" that crystalline aggregates of iodine may be induced to form within the elongated interstices of the cellulose matrix of the secondary wall and that these elongated crystals are oriented parallel to the long axies of the fibrills of cellulose. The following conclusions may be drawn from the results of this investigation. 1) Gross average fibril angle was about $17.6^{\circ}$ on stem wood. 2) Its values seem to be greater for earlywood (avg.$19.8^{\circ}$) than for latewood tracheids (avg.$15.3^{\circ}$) in normal wood. 3) According to the increase of annual ring from pith to barks the orientation of fibril angle seems to be decrease gradually in normal wood. 4) In the case of height variation in trees the sample trees have a tendency to increase the orientation fibril angle to the increase of tree height in stem.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• Economic and Environmental Geology
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• v.4 no.3
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• pp.113-119
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• 1971

The Daeheung Dolomite Mine, which is about 6km south of Danyang, Chungcheongbugdo, is coincided with almost central portion of the Danyang quardrangle scaled in 1 : 50,000. The purpose of this report is to prepare a information for the economic evaluation on the mine. Geology of the region is composed of worm-eaten limestone, crystalline limestone, crystalline dolomite rock, sandstone and shale from bottom, those are applicable to socalled Dumugol and Maggol formation of Ordovician, and batholithic biotite granite is intruded the west-side of the ditto sedimentary rocks. The dolomite bed, emplaced in bottom of the upper limestone formation, so-called Maggol formation, is about 270m in thickness, and dips $30^{\circ}{\sim}50^{\circ}$ northwest. The facies of the dolomite rock contained many brucite crystals is not only coarse-grained crystalline, but also micro crystalline in contact metasomatic parts. 25 samples were taken from the two series, A and B, in the nearly crossed direction to the strike of the dolomite bed as shown in the geological map. They were chemically analysed on the components of MgO, CaO, and $SiO_2$ as shown in Table 2. The estimate ore reserves total some 107,200,000 metric tons above the 320m level with the following average contents: MgO 21.80%, CaO 29.27% and $SiO_2$ 0.64%. It is caused by brucite minerals that MaO content in the dolomite rock is higher than pure dolomite (21.7%). The dolomite ore is possible in use for magnesian fertilizer, magnesian cement and refractory material, especially the microcrystalline dolomite ore is useful for a refractory material in furnaces of iron industries.

• 한국생물공학회:학술대회논문집
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• 2005.04a
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• pp.337-337
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• 2005

• Journal of Powder Materials
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• v.18 no.2
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• pp.168-171
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• 2011

We investigate grain growth behavior of poly-crystalline Mg sheet having strong basal fiber texture using phase field model for grain growth and micro-elasticity. Strong initial basal texture was maintained when external load was not imposed, but was weaken when external biaxial strain was imposed. Elastic interaction between elastic anisotropy of Mg grain and external load is the reason why texture evolution occurs.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.3
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• pp.149-154
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• 2000

Bi-layer Mo films were deposited on soda-lime glass substrates using DC magnetron supttering. Increasing gas pressure, the resistivity varied from $1\times10^{-5}\; to\; 8.3\times10^{-3}\; \Omega.cm$. Furthermore, stress direction yielded compressive-to-tensile transition stress curves. The micro-structure of the compressively-stressed film which had poor adhesion consists of tightly packed columns, but of the tensile-stressed films had less dense structure. Under all gas pressure conditions, Mo films exhibited distinctly increasing optical reflection with decreasing gas pressure. The expansion of (110) peak width with the gas pressure meant the worse crystalline growth. The impurity levels in the Mo film exhibited highly concentrated Na, Se and O elements due to less dense micro-structure. The degree of Na diffusion depends on the type of the glass substrate used and the nature of the Mo film.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.05a
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• pp.120-126
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• 2003

Finite element analysis model is suggested for analysis of milli-forming process, which forms milli-size products. Since the size of workpiece in a milli-forming process ranges from a few hundred micrometers to a few millimeters, microstructural changes such as the growth of micro-voids and the development of preferred orientation in a grain become crucial factors for the success of milli-forming. This analysis model incorporates anisotropy from deformation torture and deterioration of mechanical properties due to the growth of micro-voids. Applications of the proposed modeling to milli-forming are given and the results are carefully examined to understand the deformation characteristics such as texture development and damage evolution during extrusion/drawing of a milli-bar.