• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.302-302
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• 2011

The binary chalcogenide semiconductor Bi2Se3 is at the center of intensive research on a new state of matter known as topological insulators. It has Dirac point in their band structures with robust surface states that are protected against external perturbations by strong spin-orbit coupling with broken inversion symmetry. Such unique band configurations were confirmed by recent angle-resolved photoelectron emission spectroscopy experiments with an unwanted n-type doping effect, showing a Fermi level shift of about 0.3 eV caused by atomic defects such as Se vacancies. Since the number of defects can be reduced using the molecular beam epitaxy (MBE) method. We have prepared the Bi2Se3 film on noble metal Au(111) and semiconductor Si(111) substrates by MBE method. To characterize the film, we have introduced several surface sensitive techniques including x-ray photoemission electron spectroscopy (XPS) and micro Raman spectroscopy. Also, crystallinity of the film has been confirmed by x-ray diffraction (XRD). Using home-built scanning tunneling microscope, we observed the atomic structure of quintuple layered Bi2Se3 film on Au(111).

• 한국세라믹학회지
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• 제43권12호
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• pp.764-767
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• 2006

Ni/YSZ $(Y_2O_3-stabilized\;ZrO_2)$ composite as an electrode component for High Temperature Electrolysis (HTE) was fabricated by mechanical alloying method using Ni and YSZ powders. Characterization of the synthesized composite was investigated with various analysis tools, including XRD, SEM and PSA, and a self-supporting planar unit cell prepared with the Ni/YSZ composite was prepared to study the electrochemical reactions for the production of hydrogen. The Ni/YSZ cermet is composed of crystalline Ni and YSZ, in a sub-micro scale, and has an even distribution without aggregated particles. In addition, under an electrochemical reaction, the unit cell showed an $H_2$ evolution rate from steam of 14 Nml/min and $600mA/cm^2$ of current density at the electrode.

• 한국세라믹학회지
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• 제55권5호
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• pp.480-491
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• 2018

Calcium phosphates (CaP) were prepared by a wet chemical method. Micro-crystalline dicalcium phosphate (DCPD) was precipitated at $37^{\circ}C$ and pH 5.0 using $Ca(OH)_2$ and $H_3PO_4$. The precipitated DCPD solution was kept at $37^{\circ}C$ for 96 h. Artificial bone cement was composed of DCPD, $Ca(H_2PO_4)_2{\cdot}H_2O$ (MCPM), and $CaSO_4{\cdot}1/2H_2O$, $H_2O$ and aqueous poly-phosphoric acid solution. The wet prepared CaP powder was used as a matrix for the bone cement recipe. With the addition of aqueous poly-phosphoric acid, the cement hardening reaction was started and the CaP bone cement blocks were fabricated for the mechanical strength measurement. For the tested blocks, the mechanical strength was measured using a universal testing machine, and the microstructure phase analysis was done by field emission scanning electron microscopy and X-ray diffraction. The cement hardening reaction occurred through the decomposition and recrystallization of MCPM and $CaSO_4{\cdot}1/2H_2O$ added on the surface of the wet prepared CaP, and this resulted in grain growth in the bone cement block.

• 한국수소및신에너지학회논문집
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• 제16권4호
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• pp.372-378
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• 2005

Ni/YSZ ($Y_2O_3$-stabilized $ZrO_2$) composite powder for a cathode material in high temperature electrolysis(HTE) was synthesized by a mechanical alloying method with Ni and YSZ powder. Microstructure of the composite and cell thickness for HTE reaction has been analyzed with various techniques of XRD, SEM to investigate effects of fabrication conditions. Employing the composite material, furthermore, the unit cell for HTE has been studied to evolve hydrogen from water. XRD patterns showed that the composites after wet mechanical alloying were composed of respective nano-sized crystalline Ni and YSZ. While ethanol as additive for mechanical alloying increased to $20\;{\mu}m$ of average particle size of the composites, alpha-terpineol effectively decreased to sub-micro size of that. This study has been found out the evolution of hydrogen by HTE reaction employing the fabricated cathode material, showing 1.4 ml/min of $H_2$ generation rate as increasing $20\;{\mu}m$ of cathode thickness.

• Journal of Electrical Engineering and information Science
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• 제2권5호
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• pp.108-113
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• 1997

In this paper, the optimum condition of (110) Si etching with the potassium hydroxide(KOH) etchant is presented. Although several researches on (110) Si anisotropic etching have been studied, there has been lack of effects of mask quality and etching conditions on the selectivity and the roughness o the etched surface. Three kinds of masks (film, emulsion and E-beam mask) were used in order to verify the effect of etching properties. Anisotropic bulk etching depends on the crystalline orientation and the concentration and temperature of the etchant. In order to investigate the effect of etching conditions on selectivity and the roughness of the etched surface, the concentration of the etchant was varied from 35 to 45 per cent in weight with increments by 5 per cent and the temperature was changed from 70 to 90$^{\circ}C$ with increments by 10$^{\circ}C$. The combination of the temperature of 70$^{\circ}C$ and the concentration of 40wt.% was found to be the optimum etching condition for high selectivity. Etched surfaces show minimum surfaces show minimum surface roughness at a temperature of 80$^{\circ}C$ and a concentation of 40wt.%. Comb structures with various comb widths were fabricated and the lengths of the combs wree measured with several etching time durations. A micro comb structure 525$\mu\textrm{m}$ high was fabricated for MEMS application.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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• pp.33-35
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• 2011

Films of CrAlN and CrZrN were deposited on a steel substrate by closed field unbalanced magnetron sputtering, and their oxidation behaviors were investigated. CrAlN films consisted of dense, polycrystalline CrN and AlN fine columns. The formed oxides consisted primarily of crystalline $Cr_2O_3$ incorporated with $Al_2O_3$. The oxide layers were thin and compact so as to make CrAlN films more protective than CrN films. In case of CrZrN films, Zr atoms were dissolved in the CrN phase. Zr atoms advantageously refined the columnar structure, reduced the surface roughness, and increased the micro-hardness. However, the addition of Zr did not increased oxidation resistance, mainly because Zr was not a protective element. All the deposited films displayed relatively good oxidation resistance, owing to the formation of the highly protective $Cr_2O_3$ on their surface. The $Cr_{40}Zr_9N$ and $Cr_{31}Zr_{16}N$ films oxidized to $Cr_2O_3$ as the major phase and ${\alpha}-ZrO_2$ as the minor one, whereas the CrN film oxidized to $Cr_2O_3$.

• 한국전기전자재료학회논문지
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• 제13권11호
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• pp.963-968
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• 2000

Magnetic properties and microstructures of Fe$\_$93-x/Zr$_3$B$_4$Ag$\_$x/ thin films were investigated as a function of addition of element Ag, (X$\_$Ag/=0 to 6 at.%) and annealing temperature, T$\_$a/=300$\^{C}$ to 600$\^{C}$. In the case of adding Ag, magnetic properties of Fe$\_$93-x/Zr$_3$B$_4$Ag$\_$x/ thin films were improved than those of Ag-free Fe$\_$93/Zr$_3$B$_4$thin films. The prominent soft magnetic properties with coercivity of 1.1 Oe, saturation magnetization of 2.2 T and permeability of 5400 at 50㎒ were obtained from Fe$\_$88/Zr$_3$B$_4$Ag$\_$5/ thin film annealed was lower than that of Fe-base or Co-base thin films reported previously. Such enhanced magnetic properties are presumably attributed to the format in ultra fine grains. Also, the reduced eddy current loss in the annealed sample is due to refined micro magnetic domains with increasing the amount of Ag in Fe$\_$93-x/Zr$_3$B$_4$Ag$\_$x/ thin films.

• E2M - 전기 전자와 첨단 소재
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• 제10권1호
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• pp.54-60
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• 1997

The electrical and electromagnetic shielding properties have been investigated in polyaniline free standing films with different degrees of elongation cast from N-methyl 2-pyrrolidone(NMP) solution and camphorsulfonic acid(HCSA) doped polyaniline film. The degree of crystallinity of the crosslinked films increased with increasing the draw ratio. For the case of the oriented films doped with hydrochloric acid, we have the values of conductivities up to 173 S/cm. It is considered that the physical micro-crystalline crosslinking domains act as nucleation sites for the increase of relative crystallinity during stretching. We have obtained the value of conductivity 210 S/cm in the HCSA doped polyaniline film cast from the solvent of m-cresol, which is higher than that of the crosslinking oriented films. The electromagnetic shielding efficiency of HCSA doped polyaniline film obtained 37-41 dB in the frequency range of 10MHz-1GHlz, which is higher than that of the crosslinking oriented films. The higher value of electromagnetic shielding efficiency of HCSA doped polyaniline film suggests strong possibility of electromagnetic shielding material.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1271-1272
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• 2007

Experimental results regarding to the structural properties of carbon nanotubes (CNTs) and the field-emission characteristics of CNT-coated tungsten (W) tips are presented. CNTs are successfully grown on conical-type W-tips by inductively coupled plasma-chemical vapor deposition (ICP-CVD) with or without inserting a TiN-buffer layer prior to the formation of Ni catalysts. For all the CNTs grown, their nanostructures, morphologies, and crystalline structures are analyzed by FESEM, HRTEM, and Raman spectroscopy. Furthermore, the emission properties of CNT-based field-emitters are characterized to estimate the maximum current density and the threshold voltage. The results obtained in this study indicate that the emission current level of the CNT-emitter without using a TiN buffer is desirable for the application of micro-focused x-ray systems.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.326-326
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• 2007

Influence of $Nd_2O_3$ addition to $ZnO-B_2O_3$-based glass on the water leaching resistance of the glass was first investigated. The optimized $Nd_2O_3-ZnO-B_2O_3$ (NZB) glass was ball milled for varying time, mixing with followed by $Al_2O_3$ crystalline phase to form $Al_2O_3$-NZB glass composites at $875^{\circ}C$ for 1h. Microwave dielectric properties of the composites were investigated as a function of the ball milling time of the NZB glass. Dielectric constant and quality factor were 5.70 and 9497 GHz, respectively, when the NZB glass was ball milled for 6h prior to mixing with $Al_2O_3$.