Cho Byung Chul;Park Suk Won;Oh Do Hoon;Bae Hoonsik
Radiation Oncology Journal
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v.19
no.3
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pp.275-286
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2001
Purpose : To setup procedures of quality assurance (OA) for implementing intensity modulated radiation therapy (IMRT) clinically, report OA procedures peformed for one patient with prostate cancer. Materials and methods : $P^3IMRT$ (ADAC) and linear accelerator (Siemens) with multileaf collimator are used to implement IMRT. At first, the positional accuracy, reproducibility of MLC, and leaf transmission factor were evaluated. RTP commissioning was peformed again to consider small field effect. After RTP recommissioning, a test plan of a C-shaped PTV was made using 9 intensity modulated beams, and the calculated isocenter dose was compared with the measured one in solid water phantom. As a patient-specific IMRT QA, one patient with prostate cancer was planned using 6 beams of total 74 segmented fields. The same beams were used to recalculate dose in a solid water phantom. Dose of these beams were measured with a 0.015 cc micro-ionization chamber, a diode detector, films, and an array detector and compared with calculated one. Results : The positioning accuracy of MLC was about 1 mm, and the reproducibility was around 0.5 mm. For leaf transmission factor for 10 MV photon beams, interleaf leakage was measured $1.9\%$ and midleaf leakage $0.9\%$ relative to $10\times\;cm^2$ open filed. Penumbra measured with film, diode detector, microionization chamber, and conventional 0.125 cc chamber showed that $80\~20\%$ penumbra width measured with a 0.125 cc chamber was 2 mm larger than that of film, which means a 0.125 cc ionization chamber was unacceptable for measuring small field such like 0.5 cm beamlet. After RTP recommissioning, the discrepancy between the measured and calculated dose profile for a small field of $1\times1\;cm^2$ size was less than $2\%$. The isocenter dose of the test plan of C-shaped PTV was measured two times with micro-ionization chamber in solid phantom showed that the errors upto $12\%$ for individual beam, but total dose delivered were agreed with the calculated within $2\%$. The transverse dose distribution measured with EC-L film was agreed with the calculated one in general. The isocenter dose for the patient measured in solid phantom was agreed within $1.5\%$. On-axis dose profiles of each individual beam at the position of the central leaf measured with film and array detector were found that at out-of-the-field region, the calculated dose underestimates about $2\%$, at inside-the-field the measured one was agreed within $3\%$, except some position. Conclusion : It is necessary more tight quality control of MLC for IMRT relative to conventional large field treatment and to develop QA procedures to check intensity pattern more efficiently. At the conclusion, we did setup an appropriate QA procedures for IMRT by a series of verifications including the measurement of absolute dose at the isocenter with a micro-ionization chamber, film dosimetry for verifying intensity pattern, and another measurement with an array detector for comparing off-axis dose profile.
Proceedings of the Korean Vacuum Society Conference
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2012.08a
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pp.154-155
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2012
The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (< $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.
Flow-induced voids during resin impregnation and poor fiber wetting have known to be highly detrimental to the performance of composite parts manufactured by resin transfer molding(RTM) process. In this study, in order to overcome these serious problems encountered in RTM, the effects of surface modification by using silane coupling agent as a surface modifier on the flow characteristics, the wetting between resin and fiber, and void content were investigated. For the experiments of microscopic flow visualization and curing in a beam mold, glass fiber mats having plain weaving structure and epoxy resin were used. Modifying the fiber surface was found to result in a significant decrease of dynamic contact angle between resin and fiber and increase of wicking rate. Therefore, it was confirmed that the surface modification employed in this study could improve the wettability of reinforcing fibers as well as micro flow behavior. In addition, It was revealed that high temperature and low penetration rate of the resin are more favorable processing conditions to reduce the dynamic contact angle. However, surface modified fiber mat was found to have lower permeability than the unmodified one, which may be explained in terms of the decrease of contact time between resin and fiber owing to improvement of wetting. It was also exhibited that surface modification had a significant influence on void formation in RTM process, resulting in a decrease of overall void content due to the improvement of wetting in cured composite parts.
Proceedings of the Korean Vacuum Society Conference
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2012.08a
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pp.184-184
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2012
Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.
Journal of the Computational Structural Engineering Institute of Korea
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v.20
no.3
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pp.287-292
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2007
In general, the response of bulk material is independent of its size when it comes to considering classical elasticity theory. Because the surface to bulk ratio of the large solids is very small, the influence of surface can be negligible. But the surface effect plays important role as the surface to bulk ratio becomes larger, that is, the contribution of the surface effect must be considered in nano-size elements such as thin film or beam structure. Molecular dynamics computation has been a conventional way to analyze these ultra-thin structures but this method is limited to simulate on the order of $10^6{\sim}10^9$ atoms for a few nanoseconds, and besides, very time consuming. Analysis of structures in submicro to micro range(thin-film, wire etc.) is difficult with classical molecular dynamics due to the restriction of computing resources and time. Therefore, in this paper, the continuum-based method is considered to simulate the overall physical and mechanical properties of the structures in nano-scale, especially, for the thin-film.
Journal of the Institute of Electronics Engineers of Korea SD
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v.49
no.2
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pp.1-8
/
2012
This paper presents the accelerometer which is a key component of TPMS(Tire Pressure Monitoring System). Generally a piezoresistive accelerometer has characteristics of lower cost, better linearity and better immunity about the environmnet noise than a capacitive one. Three types of piezoresistive accelerometers are degined and simulated using ANSYS program. The best one is a piezoresistive sensor which is supported by four beams located at the center of the edge of the mass after comparing the characteristics of resonant frequency of the three types. Considering the sensor size and a simulated maximum stress and maximum displacement, the length of beams is set as $200{\mu}m$. The size of a piezoresistive accelerometer is $3.0mm{\times}3.0mm{\times}0.4mm$. The sensor output is characterized by measuring the output characteristic depending on angle. As a result the offset voltage of the accelerometer is 43.2 mV and its sensitivity is $42.5{\mu}V/V/g$. The temperature bias drift is measured. The shock durability of the sensor is 1500g and the measuring range is 0 ~ 60 g.
In Gimcheon area of the central Yeongnam massif granite gneiss occurrs with intercalated biotite gneiss at xenolith or restite. In order to understand the evolution of the central Yeongnam massif, it is essential to have absolute age information, but not many age data are available yet. Furthermore the previous age determinations from the study area are not compatible with the outcrop relationship. In this study we determined chemical ages from the zircon grains. We obtained ages of $1970\pm$ 78(l$\sigma$)Ma from the granite gneiss, $1814\pm$77(l$\sigma$)Ma from the outer rim of a rounded zircon and 1973$\pm$97(l$\sigma$)Ma from a longish zircon, both from the biotite gneiss. These ages seem to indicate the timing of granitic magma intrusion and subsequent metamorphism. Ages of $2954\pm$ 158($l\sigma$)Ma, 2440$\pm$58(l$\sigma$)Ma, and 2219$\pm$36($l\sigma$)Ma obtained from zoned core of the rounded zircon grain from the biotite gneiss suggest various geological events before such metamorphism of the biotite gneiss. Ages in the range of 1450~1670 Ma observed in zircons of both gniesses suggest later metamorphism that the granite gneiss and the biotite gneiss experienced together. The chemical age determination by electron probe micro-analyzer of this study utilized 1$\mu\textrm{m}$ beam diameter and it seems to be a very useful age determination from the zircons with complex growth history because of superior spatial resolution.
Huh, Hyun-Do;Kim, Seong-Hoon;Park, Jin-Ho;Cho, Byung-Chul;Shin, Dong-Oh;Soo il Kwon;Chun, Ha-Chung;John J K Loh;Kim, Woo-Chul
Progress in Medical Physics
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v.15
no.2
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pp.94-99
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2004
Radiochromic film has several advantages; high spatial resolution, relatively low spectral sensitivity, near tissue equivalence and requires no special development procedure. The object of this study was to measure the anisotropy of an Ir-192 source (microSelectron manufactured by Nucletron) in a few mm regions from the source, using the GafChromic film. The GafChromic film was calibrated in the range of 0∼105 Gy, using a 4 MV photon beam, and the anisotropy function measured in an acrylic phantom using the GafChroimic film. The data obtained gave agreement to within 4.4% of the Monte Calro calculation, by J. F. Williamson, at a radial distance of 2.5 mm with polar angles of 50 to 130$^{\circ}$, while a maximum deviation of 17.6% was observed at angles near 140$^{\circ}$and agreement within 3.7% at a radial distance of 5 mm at polar angles between 35 to 150$^{\circ}$ and a maximum deviation of 7.6% was observed at angles near 30$^{\circ}$. A GafChromic film can be used as a more efficient detector for measuring the anisotropy of an HDR $^{192}$ Ir source at close distances than any other detector.
Purpose. The intent of this study was to evaluate the effects of curing conditions on self-curing denture base resins to find out proper condition in self-curing resin polymerization. Materials and methods, In this study, 3 commercial self-curing denture base resins are used Vertex SC, Tokuso Rebase and Jet Denture Repair Acrylic. After mixing the self curing resin, it was placed in a stainless steel mold(3$\times$6$\times$60mm). The mold containing the resin was placed under the following conditions: in air at 23$^{\circ}C$; or in water at 23$^{\circ}C$; or in water at 23$^{\circ}C$ under pressure(20psi); or in water at 37$^{\circ}C$ under pressure(20psi) or in water at 50$^{\circ}C$ under pressure(20psi) , or in water at 65$^{\circ}C$ under pressure(20psi), respectively. Also heat-curing denture base resin is polymerized according to manufactures' instructions as control. Fracture toughness was measured by a single edge notched beam(SENB) method. Notch about 3mm deep was carved at the center of the long axis of the specimen using a dental diamond disk driven by a dental micro engine. The flexural test was carried out at a crosshead speed 0.5mm/min and fracture surface were observed under measuring microscope. Results and conclusion . The results obtained were summarized as follows : 1. The fracture toughness value of self-curing denture base resins were relatively lower than that of heat-curing denture base resin. 2. In Vertex SC and Jet Denture Repair Acrylic, higher fracture toughness value was observed in the curing environment with pressure but in Tokuso Rebase, low fracture toughness value was observed but there was no statistical difference. 3. Higher fracture toughness value was observed in the curing environment with water than air but there was no statistical difference. 4. Raising the temperature in water showed the increase of fracture toughness.
The Journal of Korean Institute of Electromagnetic Engineering and Science
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v.18
no.3
s.118
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pp.323-333
/
2007
In this paper, a new MDAS-DR antenna structure designed to efficiently shape a flat-topped radiation pattern is proposed. The antenna structure is composed of a stacked micro-strip patch exciter and a multi-layered disk array structure(MDAS) surrounded by a dielectric ring. The MDAS, which was supplied by a stacked microstrip patch exciter with radiating power, can form a flat-topped radiation pattern in a far field by a mutual interaction with the surrounding dielectric ring. Therefore, the design parameters of the dielectric ring and the MDAS structure are important design parameters for shaping a flat-topped radiation pattern. The proposed antenna used twelve multi-layered disk array elements and a Teflon material with a dielectric constant of 2.05. An antenna operated at 10 GHz$(9.6\sim10.4\;GHz)$ was designed in order to verify the effectiveness of the proposed antenna structure. The commercial simulator of CST Microwave $Studio^{TM}$, which was adapted to a 3-D antenna structure analysis, was used for the simulation. The antenna breadboard was also fabricated and its electrical performance was measured in an anechoic antenna chamber. The measured results of the antenna breadboard with a flat-topped radiation pattern were found to be in good agreement with the simulated one. The MDAS-DR antenna gain measured at 10 GHz was 11.18 dBi, and the MDAS-DR antenna was capable of shaping a good flat-topped radiation pattern with a beam-width of about $40^{\circ}$, at least within a fractional bandwidth of 8.0 %.
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