• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.523-525
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• 2008

Inkjet printing is being considered as an alternative to the conventional lithography in the electronic industry. Surface energy control of substrate is a critical issue in controlling the dimension of microstructures by the inkjet printing. This study introduces the surface energy control of ITO substrate for in/q'et printing of PEDOT/PSS.

• Proceedings of the KIEE Conference
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• 2000.07a
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• pp.165-168
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• 2000

This paper describes the guideline of design and tuning of practical Micro 5KVA machine's digital AVR/PSS control parameters by using the computer models and testing on-line AVR step test of laboratory simulator under the no-load or load conditions. The suggested procedures can be also applied to the large scaled machine's AVR/PSS control parameter tuning in KEPCO system.

• Korean Journal of Materials Research
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• v.29 no.1
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• pp.59-64
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• 2019

This study investigates the optical characteristics of InGaN multiple quantum wells(MQWs) light emitting diodes(LEDs) on planar sapphire substrates(PSSs), nano-sized PSS(NPSS) and micro-sized PSS(MPSS). We obtain the results as the patterning size of the sapphire substrates approach the nanometer scale: The light from the back side of the device increases and the total light extraction becomes larger than the MPSS- and planar-LEDs. The experiment is conducted by Monte Carlo ray-tracing, which is regarded as one of the most suitable ways to simulate light propagation in LEDs. The results show fine consistency between simulation and measurement of the samples with different sized patterned substrates. Notably, light from the back side becomes larger in the NPSS LEDs. We strongly propose that the increase in the light intensity of NPSS LEDs is due to an abnormal optical distribution, which indicates an increase of extraction probability through NPSS.

• Journal of Electrochemical Science and Technology
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• v.11 no.1
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• pp.50-59
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• 2020

Birnessite-type manganese dioxide (δ-MnO₂) with hierarchical micro-/mesoporosity was synthesized via sacrificial graphene template approach under mild hydrothermal conditions for the first time. Graphene template was obtained by a surfactant (cetyltrimethylammonium bromide, CTAB) assisted liquid phase exfoliation (LPE) in water. A thin PEDOT:PSS (poly (3,4-ethylene dioxythiophene): poly (styrene sulfonate)) layer was applied to improve electrical conductivity and rate capability of MnO₂. The MnO₂ (535 F g^-1 at 1 A g^-1 and 45 F g^-1 at 10 A g^-1) and MnO₂/PEDOT:PSS nanocomposite (550 F g^-1 at 1 A g^-1 and 141 F g^-1 at 10 A g^-1) delivered electrochemical performances superior to their previously reported counterparts. An asymmetric supercapacitor, composed of MnO₂/PEDOT:PSS (positive) and Fe₃O₄/Carbon (negative) electrodes, provided a maximum specific energy of 18 Wh kg^-1 and a maximum specific power of 4.5 kW kg^-1 (ΔV= 2 V, 1M Na₂SO₄) with 85% capacitance retention after 1000 cycles. The graphene-templated MnO₂/PEDOT:PSS nanocomposite obtained by a simple and green approach promises for future energy storage applications with its remarkable capacitance, rate performance and cycling stability

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.473-474
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• 2012

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.11a
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• pp.485-486
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• 2007

• Journal of the Korean Society for Precision Engineering
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• v.30 no.6
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• pp.567-572
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• 2013

In many electro-devices, the vacuum process is used as the manufacturing process. However, the vacuum process has a problem, it is difficult to apply to a continuous process such as a R2R(roll to roll) printing process. In this paper, we propose an ESD (electro static deposition) printing process has been used to apply an organic solar cell of thin film forming. ESD is a method of liquid atomization by electrical forces, an electrostatic atomizer sprays micro-drops from the solution injected into the capillary with electrostatic force generated by electric potential of about several tens kV. The organic solar cell based on a P3HT/PCBM active layer and a PEDOT:PSS electron blocking layer prepared from ESD method shows solar-to-electrical conversion efficiency of 1.42% at AM 1.5G 1sun light illumination, while 1.86% efficiency is observed when the ESD deposition of P3HT/PCBM is performed on a spin-coated PEDOT:PSS layer.

• Journal of the Korean Ceramic Society
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• v.33 no.8
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• pp.863-870
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• 1996

Fabricated modified PZT system for pyroelectric IR sensor were analyzed and characterized for dielectric piezoelectric and pyroelectric properties. Particle size and distribution of source powders were controlled by attrition milling process. 0.05PSS+yPT+(0.95-y)PZ+0.4 wt%MnO2 system was fabricated and investigated sintering density crystal structure and micro-structure through sintering conditions sintering temperature and sintering atmosphere. The poled sintered system of y=0.11 showed the lowest dielectric constant. The dielectric constants were increased with increasing y-mole ratio. The pyroelectric properties of modified PZT systems which were assembled to TO-5 package were measured by IR measurement system average out-voltage of 0.05PSS+0.1PT+0.84PZ+ wt%MnO2 was 3V.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.113.1-113.1
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• 2011

PEMS (printed electro-mechanical system) is fabricated by means of various printing technologies. Passive and active compo-nents in 2D or 3D such as conducting lines, resistors, capacitors, inductors and TFT(Thin Film Transistor), which are printed withfunctional materials, can be classified in this category. And the issue of PEMS is applied to a R2R process in the manu-facturing process. In many electro-devices, the vacuum process is used as the manufacturing process. However, the vacuum process has a problem, it is difficult to apply to a continuous process such as a R2R(roll to roll) printing process. In this paper, we propose an ESD (electro static deposition) printing process has been used to apply an organic solar cell of thin film forming. ESD is a method of liquid atomization by electrical forces, an electrostatic atomizer sprays micro-drops from the solution injected into the capillary with electrostatic force generated by electric potential of about several tens kV. ESD method is usable in the thin film coating process of organic materials and continuous process as a R2R manufacturing process. Therefore, we experiment the thin films forming of PEDOT:PSS layer and active layer which consist of the P3HT:PCBM. The organic solar cell based on a P3HT/PCBM active layer and a PEDOT:PSS electron blocking layer prepared from ESD method shows solar-to-electrical conversion efficiency of 1.42% at AM 1.5G 1sun light illumination, while 1.86% efficiency is observed when the ESD deposition of P3HT/PCBM is performed on a spin-coated PEDOT:PSS layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.51-51
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• 2010

Group III-nitride semiconductors have been widely studied as the materials for growth of light emitting devices. Currently, GaN devices are predominantly grown in the (0001) c-plane orientation. However, in case of using polar substrate, an important physical problem of nitride semiconductors with the wurtzite crystal structure is their spontaneous electrical polarization. An alternative method of reducing polarization effects is to grow on non-polar planes or semi-polar planes. However, non-polar and semipolar GaN grown onto r-plane and m-plane sapphire, respectively, basically have numerous defects density compared with c-plane GaN. The purpose of our work is to reduce these defects in non-polar and semi-polar GaN and to fabricate high efficiency LED on non/semi-polar substrate. Non-polar and semi-polar GaN layers were grown onto patterned sapphire substrates (PSS) and nano-porous GaN/sapphire substrates, respectively. Using PSS with the hemispherical patterns, we could achieve high luminous intensity. In case of semi-polar GaN, photo-enhanced electrochemical etching (PEC) was applied to make porous GaN substrates, and semi-polar GaN was grown onto nano-porous substrates. Our results showed the improvement of device characteristics as well as micro-structural and optical properties of non-polar and semi-polar GaN. Patterning and nano-porous etching technologies will be promising for the fabrication of high efficiency non-polar and semi-polar InGaN LED on sapphire substrate.