• 제목/요약/키워드: metal-organic chemical vapor deposition (MOCVD)

검색결과 216건 처리시간 0.022초

MOCVD를 이용한 비평면구조 기판에서의 GaN 선택적 성장특성연구 (A Study on the Selection Area Growth of GaN on Non-Planar Substrate by MOCVD)

  • 이재인;금동화;유지범
    • 한국재료학회지
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    • 제9권3호
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    • pp.257-262
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    • 1999
  • MOCVD를 이용하여 $SiO_2$로 패턴된 GaN/sapphire 기판상에서 $NH_3$유량과 성장온도가 GaN 성장의 선택성과 성장 특성에 미치는 영향을 조사하였다. $NH_3$유량을 500~1300sccm, 성장온도를 $950~1060^{\circ}C$로 변화시켜 성장변수에 따른 영향을 주사전자현미경으로 관찰하였다.$NH_3$유량이 증가할수록 성장선택성이 향상되었으나 기판윈도우에서 성장되는 GaN 형상변화에는 큰 영향을 미치지 못하였다. 성장온도가 높을수록 GaN의 성장선택성이 향상됨이 관찰되었다. 패턴 모양을 원형, 선형, 방사선모양(선형 패턴을 30, $45^{\circ}$로 회전)으로 제작하여 GaN 성장을 수행한 후 관찰한 결과 {1101}으로 이루어진 Hexagonal 피라밋 형상과 마스크층 위로의 측면성장을 얻을 수 있었으며, 성장조건에 따른 <1100>와 <1210>의 방향으로의 측면성장속도의 차이를 관찰할 수 있었다.

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열처리에 따른 구리박막의 리플로우 특성 (The Effects of the Annealing on the Reflow Property of Cu Thin Film)

  • 김동원;김상호
    • 한국표면공학회지
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    • 제38권1호
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    • pp.28-36
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    • 2005
  • In this study, the reflow characteristics of copper thin films which is expected to be used as interconnection materials in the next generation semiconductor devices were investigated. Cu thin films were deposited on the TaN diffusion barrier by metal organic chemical vapor deposition (MOCVD) and annealed at the temperature between 250℃ and 550℃ in various ambient gases. When the Cu thin films were annealed in the hydrogen ambience compared with oxygen ambience, sheet resistance of Cu thin films decreased and the breakdown of TaN diffusion barrier was not occurred and a stable Cu/TaN/Si structure was formed at the annealing temperature of 450℃. In addition, reflow properties of Cu thin films could be enhanced in H₂ ambient. With Cu reflow process, we could fill the trench patterns of 0.16~0.24 11m with aspect ratio of 4.17~6.25 at the annealing temperature of 450℃ in hydrogen ambience. It is expected that Cu reflow process will be applied to fill the deep pattern with ultra fine structure in metallization.

Si(111) 위에 Ion beam 처리 후 AlN layer를 완충층으로 이용하여 성장시킨 GaN의 특성 (The characteristics of AlN buffered GaN on ion beam modified Si(111) substrates)

  • 강민구;진정근;이재석;오승석;현진;변동진
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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    • pp.99-99
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    • 2003
  • The growth of GaN on Si is of great interest due to the several advantages : low cost, large size and high-quality wafer availability as well as its matured technology. The crystal quality of GaN is known to be much influenced by the surface pretreatment of Si substrate[1]. In this work, the properties of GaN overlayer grown on ion beam modified Si(111) have been investigated. Si(111) surface was treated RIB with 1KeV-N$_2$$\^$+/(at 1.9 ${\times}$ 10$\^$-5/) to dose ranging from 5${\times}$10$\^$15/ to 1${\times}$10$\^$17/ prior to film growth. GaN epilayers were grown at 1100$^{\circ}C$ for 1 hour after growing AlN buffer layers for 5∼30 minutes at 1100$^{\circ}C$ in Metal Organic Chemical Vapor Deposition (MOCVD). The properties of GaN epilayers were evaluated by X-Ray Diffraction(XRD), Raman spectroscopy, Photoluminescence(PL) and Hall measurement. The results showed that the ion modified treatment markedly affected to the structural, optical and electrical characteristic of GaN layers.

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이온주입된 Si(111)에 AlN 완충층을 이용하여 성장시킨 GaN 박막의 특성 (The characteristics of AlN buffered GaN on ion implanted Si(111))

  • 강민구;진정근;이재석;노대호;양재웅;변동진
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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    • pp.165-165
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    • 2003
  • The growth of GaN on Si is of great interest due to the several advantages low cost, large size and high-quality wafer availability as well as its matured technology. The crystal quality of GaN is known to be much influenced by the surface pretreatment of Si substrate [1]. In this work, the properties of GaN overlayer grown on ion implanted Si(111)and bare Si(111) have been investigated. Si(111) surface was treated ion implantation with 60KeV and dose 1${\times}$10$\^$16//$\textrm{cm}^2$ prior to film growth. GaN epilayers were grown at 1100$^{\circ}C$ for 1 hour after growing AlN buffer layers for 15-30 minutes at 1100$^{\circ}C$ with metal organic chemical vapor deposition (MOCVD). The properties of GaN epilayers were evaluated by X-Ray Diffraction (XRD), Scanning electron microscope (SEM) Photoluminescence (PL) at room temperature and Hall measurement The results showed that the GaN on ion implanted Si(111) markedly affected to the structural, optical and electrical characteristic of GaN layers.

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광촉매가 코팅된 플라스틱 광섬유을 이용한 VOC 광분해반응 (Photodegradation of VOCs by Using TiO$_2$-Coated POF)

  • Ha, Jin-Wook;Joo, Hyun-Ku
    • 한국산학기술학회논문지
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    • 제4권3호
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    • pp.199-203
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    • 2003
  • In this study plastic optical fibers (POFs) were considered as light-transmitting media and substrates for the potential use in photocatalytic environmental purification system. After the characteristics of POFs in terms of light transmittance and absorption were determined at the beginning, the further investigation was performed through the photocatalytic degradation of trichloroethylene (TCE), iso-propanol and etc. with TiO$_2$-coated optical fiber reactor systems (POFR). It is concluded that the use of POFs is preferred to quartz optical fibers (QOFs) since the advantages such as ease of handling, lower cost, relatively reasonable light attenuation at the wavelength of near 400nm can be obtained. Various geometrical reactor shapes have been constructed and applied for the last one and half years. For the use of POF in water phase treatment, however, more detailed scientific and engineering aspects should be envisaged. This case requires a suitable mixture to obtain more stable and innocuous immobilization of photocatalyst on POF. To overcome this disadvantage, metal-organic chemical vapor deposition (MOCVD) was conducted in a fluidized bed to deposit thin films of titania on glass and alumina beads. Those can be used as photocatalysis for the removal of pollutants especially in liquid phases.

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The critical Mg doping on the blue light emission in p-type GaN thin films grown by metal-organic chemical vapor deposition

  • Kim, Keun-Joo
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 기술교육위원회 창립총회 및 학술대회 의료기기전시회
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    • pp.52-59
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    • 2001
  • The photoluminescence and the photo-current from p-type GaN films were investigated on both room- and low-temperatures for various Mg doping concentrations. At a low Mg doping level, there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the VGa and for an acceptor of MgGa. The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photo-current signal of 3.02-3.31 eV. At a high Mg doping level, there is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band. This center is attributed to the defect structures of MgGa-VN for the deep donor and MgGa for the acceptor. For low. doped samples, thermal annealing provides an additional photo-current signal for an unoccupied deep acceptor levels of 0.87-1.35 eV above valence band, indicating the p-type activation.

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열처리에 따른 SnO2 박막의 표면형상 (Influence of Thermal Treatment on Surface Morphology of Tin Dioxide Thin Films)

  • 박경희;류현욱;서용진;이우선;홍광준;박진성
    • 한국재료학회지
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    • 제13권7호
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    • pp.442-446
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    • 2003
  • Tin dioxide ($SnO _2$) thin films were deposited at $375^{\circ}C$ on alumina substrate by metal-organic chemical vapor deposition. A few hillocks like a cauliflower were observed and the number of hillock on thin film surface increased with annealing temperature in air atmosphere. The oxygen content and the binding energy during air annealing at$ 500^{\circ}C$ came to close the stoichiometric $SnO_2$. The cauliflower hillocks seem to be the result of the continuous migration of the tiny grains to release the stress of an expanded grain. Sensitivity of CO gas depended on annealing temperature and increased with increasing annealing temperature.

고출력 AlGaAs SCH-SQW 레이저 다이오드 개발 (Development of High-Power AlGaAs SCH-SQW Laser Diode)

  • 손진승;계용찬;권오대
    • 전자공학회논문지A
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    • 제30A권10호
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    • pp.27-32
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    • 1993
  • Separate-confinement hetero-structure (SCH) broad area Laser Diodes (LD's) were fabricated from $Al_{0.07}$Ga$_{0.93}$/. As single-quantum-well (SQW) grown by metal organic chemical vapor deposition (MOCVD). Under pulsed operation, we obtained maximum output powers of about 0.8watt/facet and 1.83watt/facet from LD's with 60$\mu$m and 160$\mu$m channel width, respectively, without facet coatings. The differential quantum efficiency of the 60$\mu$m wide LD was about 21.7%/facet and its threshold current density was about 1k [A/cm$^{2}$]. The differential quantum efficiency of the 160$\mu$m wide LD was about 25.6%/facet and its threshold current density was about 1k[A/cm$^{2}$]. The minimum threshold current density of 60$\mu$m wide LD's was 620[A/cm$^{2}$] when the cavity length was 603$\mu$m and the minimum threshold current density of 160$\mu$m wide Ld's was 675[A/cm$^{2}$] when the cavity length was 752$\mu$m. The internal quantum efficienty and the internal loss of both LD's were 92.3% and 18.1cm$^{1}$, respectively.

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Mg-Doped GaN/Sapphire 구조로 제작된 압전 박막 SAW 필터의 특성분석 (Characteristics analysis of Piezoelectric Thin Film SAW filter using Mg-doped GaN/Sapphire Structure)

  • 장철영;정은자;정영철;최현철;이정희;이용현
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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    • pp.759-762
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    • 2003
  • The epitaxially grown Mg-doped GaN thin film was prepared by MOCVD (Metal Organic Chemical Vapor Deposition) for a SAW(Surface Acoustic Wave) filter. Mg-doped GaN thin film had enough properties for a SAW filter which include crystallinity and morphology. The surface morphology and crystalline of the Mg-doped GaN thin films were characterized using AFM and an X-ray rocking curve. The SAW filter, which was fabricated by lift-off process and frequency response, was measured by HP 8753C network analyzer. Center frequency was 96.687 MHz and SAW velocity was 5801 m/s when wavelength(λ) was 60${\mu}{\textrm}{m}$. Insertion loss was over -10 dB, Q was factor over 200, and side lobe attenuation was over 22 dB which was suitable for use as a SAW filter. Electro-mechanical coupling coefficient (k$^2$) was calculated from the measured data. k$^2$ was from 1 % to 1.44 %. The fabricated SAW filter using Mg-doped GaN/sapphire structure has good qualities as a filter and will be used as a SAW filter for operating RF frequency.

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Fabrication and Electrical Characteristics of a Lateral type GaN Field Emission Diode

  • Lee, Jae-Hoon;Lee, Hyung-Ju;Lee, Myoung-Bok;Hahm, Sung-Ho;Lee, Jung-Hee;Choi, Kue-Man
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.647-650
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    • 2002
  • A lateral type GaN field emission diodes were fabricated by utilizing metal organic chemical vapor deposition (MOCVD). In forming the pattern, two kinds of procedures were proposed: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for 7 ${\mu}m$ gap and an emission current of ${\sim}580$ nA/10tips at anode-to-cathode voltage of 100 V These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance.

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