• 제목/요약/키워드: metal thin membrane

검색결과 53건 처리시간 0.029초

다공성 스테인리스 강 지지체의 표면개질에 따른 팔라듐-은 합금 수소 분리막의 수소 투과 선택도의 변화 (Effect of Surface Modification of the Porous Stainless Steel Support on Hydrogen Perm-selectivity of the Pd-Ag Alloy Hydrogen Separation Membranes)

  • 김낙천;김세홍;이진범;김현희;양지혜;김동원
    • 한국표면공학회지
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    • 제49권3호
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    • pp.286-300
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    • 2016
  • Pd-Ag alloy membranes have attracted a great deal of attention for their use in hydrogen purification and separation due to their high theoretical permeability, infinite selectivity and chemical compatibility with hydro-carbon containing gas streams. For commercial application, Pd-based membranes for hydrogen purification and separation need not only a high perm-selectivity but also a stable long-term durability. However, it has been difficult to fabricate thin, dense Pd-Ag alloy membranes on a porous stainless steel metal support with surface pores free and a stable diffusion barrier for preventing metallic diffusion from the porous stainless steel support. In this study, thin Pd-Ag alloy membranes were prepared by advanced Pd/Ag/Pd/Ag/Pd multi-layer sputter deposition on the modified porous stainless steel support using rough polishing/$ZrO_2$ powder filling and micro-polishing surface treatment, and following Ag up-filling heat treatment. Because the modified Pd-Ag alloy membranes using rough polishing/$ZrO_2$ powder filling method demonstrate high hydrogen permeability as well as diffusion barrier efficiency, it leads to the performance improvement in hydrogen perm-selectivity. Our membranes, therefore, are expected to be applicable to industrial fields for hydrogen purification and separation owing to enhanced functionality, durability and metal support/Pd alloy film integration.

Ti/Au 이중층을 이용한 초전도 상전이 센서 제작 (Fabrication of Superconducting Transition Edge Sensors based on Ti/Au Bilayer Formation)

  • 이영화;김용함
    • 한국전기전자재료학회논문지
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    • 제21권10호
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    • pp.943-949
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    • 2008
  • We report on the development of transition edge sensors for x-ray detection. The sensor technology was based on the fabrication of a superconducting film on a thin membrane. A bilayer of a superconductor, Ti, and a noble metal, Au, was e-beam evaporated on a micromachined SiNx. Another Au layer was evaporated on the two side edges of the bilayer in order not to be affected by structural imperfections at the boundaries. With the method described in the present report, the superconducting transition temperature of the device was consistently achieved to near 80 mK with a sharp transition. The energy spectrum ueasured with the device provided 37 eV FWHM for 5.9 x-rays. We also discuss the design and fabrication considerations as well as the performance of the device in detail.

지하수 model에 관한 모형시험방법 (An Introduction to the Ground Water Model Test)

  • 김주욱
    • 한국농공학회지
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    • 제9권2호
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    • pp.1301-1305
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    • 1967
  • Ground water flow can be studied with model test. Model test of ground water works are necessary for economic and safe design of the works. Also influence of the ground water flow to the durability and safety of hydraulic structures can be studied with this model. a. Sand model ; Water flow through porous media is the principle of sand model. Darcy's formula is the basic equation, $q=k{\frac{dh}{ds}}^{\circ}. The effect of the ground water flow on the grain system itself is represented with this model only. b. Hele-Shaw model ; In this model use is made of the viscous flow analogy. Viscous fluid such as glycerine flowing through two parallel plates depends on Poiseuille law, $q=-c{\frac{dh}{ds}}$. The analogue can be used vertically and horizontally. c. Heat model ; This is based on the analogy of the Fourier's law for heat conduction and Darcy's law for ground water flow. Especially unsteady problem can be studied with this model. A difficulty of the construction of this model is the isolation, which has to prevent losses of the heat. d. Electirc model ; Ohm's law for electric current is analogous to Darcy's law. Resistance material such as metal foil, graphite block, water with salt added, gelatine with salt added, ete. is connected to electric sources and resistor, and equi-voltage line is detected with galvanometer, $N_aCl$, $CuSo_4$, etc. are used as salt in the model. e. Membrane model ; This model is based on the facts that the deflection of a thin membrane obeys Laplace's equation if there is no load in the direction perpendicular to the membrane, and if the dellection is small.

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UV-cured Polymer Solid Electrolyte Reinforced using a Ceramic-Polymer Composite Layer for Stable Solid-State Li Metal Batteries

  • Hye Min Choi;Su Jin Jun;Jinhong Lee;Myung-Hyun Ryu;Hyeyoung Shin;Kyu-Nam Jung
    • Journal of Electrochemical Science and Technology
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    • 제14권1호
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    • pp.85-95
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    • 2023
  • In recent years, solid-state Li metal batteries (SSLBs) have attracted significant attention as the next-generation batteries with high energy and power densities. However, uncontrolled dendrite growth and the resulting pulverization of Li during repeated plating/stripping processes must be addressed for practical applications. Herein, we report a plastic-crystal-based polymer/ceramic composite solid electrolyte (PCCE) to resolve these issues. To fabricate the one-side ceramic-incorporated PCCE (CI-PCCE) film, a mixed precursor solution comprising plastic-crystal-based polymer (succinonitrile, SN) with garnet-structured ceramic (Li7La3Zr2O12, LLZO) particles was infused into a thin cellulose membrane, which was used as a mechanical framework, and subsequently solidified by using UV-irradiation. The CI-PCCE exhibited good flexibility and a high room-temperature ionic conductivity of over 10-3 S cm-1. The Li symmetric cell assembled with CI-PCCE provided enhanced durability against Li dendrite penetration through the solid electrolyte (SE) layer than those with LLZO-free PCCEs and exhibited long-term cycling stability (over 200 h) for Li plating/stripping. The enhanced Li+ transference number and lower interfacial resistance of CI-PCCE indicate that the ceramic-polymer composite layer in contact with the Li anode enabled the uniform distribution of Li+ flux at the interface between the Li metal and CI-PCCE, thereby promoting uniform Li plating/stripping. Consequently, the Li//LiFePO4 (LFP) full cell constructed with CI-PCCE demonstrated superior rate capability (~120 mAh g-1 at 2 C) and stable cycle performance (80% after 100 cycles) than those with ceramic-free PCCE.

Fabrication of Field Emitter Arrays by Transferring Filtered Carbon Nanotubes onto Conducting Substrates

  • Jang, Eun-Soo;Goak, Jung-Choon;Lee, Han-Sung;Lee, Seung-Ho;Lee, Nae-Sung
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.311-311
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    • 2009
  • Carbon nanotubes (CNTs) belong to an ideal material for field emitters because of their superior electrical, mechanical, and chemical properties together with unique geometric features. Several applications of CNTs to field emitters have been demonstrated in electron emission devices such as field emission display (FED), backlight unit (BLU), X-ray source, etc. In this study, we fabricated a CNT cathode by using filtration processes. First, an aqueous CNT solution was prepared by ultrasonically dispersing purified single-walled CNTs (SWCNTs) in deionized water with sodium dodecyl sulfate (SDS). The aqueous CNT solution in a milliliter or even several tens of micro-litters was filtered by an alumina membrane through the vacuum filtration, and an ultra-thin CNT film was formed onto the alumina membrane. Thereafter, the alumina membrane was solvated by acetone, and the floating CNT film was easily transferred to indium-tin-oxide (ITO) glass substrate in an area defined as 1 cm with a film mask. The CNT film was subjected to an activation process with an adhesive roller, erecting the CNTs up to serve as electron emitters. In order to measure their luminance characteristics, an ITO-coated glass substrate having phosphor was employed as an anode plate. Our field emitter array (FEA) was fairly transparent unlike conventional FEAs, which enabled light to emit not only through the anode frontside but also through the cathode backside, where luminace on the cathode backside was higher than that on the anode frontside. Futhermore, we added a reflecting metal layer to cathode or anode side to enhance the luminance of light passing through the other side. In one case, the metal layer was formed onto the bottom face of the cathode substrate and reflected the light back so that light passed only through the anode substrate. In the other case, the reflecting layer coated on the anode substrate made all light go only through the cathode substrate. Among the two cases, the latter showed higher luminance than the former. This study will discuss the morphologies and field emission characteristics of CNT emitters according to the experimental parameters in fabricating the lamps emitting light on the both sides or only on the either side.

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PEM 연료전지용 가스확산층-탄소 복합재료 분리판 조합체 개발 (Development of GDL-carbon Composite Bipolar Plate Assemblies for PEMFC)

  • 임준우
    • Composites Research
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    • 제34권6호
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    • pp.406-411
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    • 2021
  • PEM(양성자 교환막) 연료 전지는 부산물로 물 만을 생성하여 친환경 에너지원으로 각광받고 있다. 이러한 연료전지의 스택을 이루는 여러 부품들 중 연료전지의 효율을 결정짓는 분리판에 관한 연구가 활발히 진행되고 있다. 복합재료 분리판은 높은 강도와 강성 및 내식성을 갖지만 상대적으로 낮은 전기 전도도를 갖는 단점이 있다. 본 연구에서는 이러한 단점을 극복하고자 가스확산층(GDL)-복합재료 분리판 조합체를 개발하고 그 성능을 실험적으로 확인하였다. 선행 연구에서 개발된 흑연 포일 코팅법을 분리판과 GDL 간의 접촉 저항을 줄이기 위해 적용하였다. 또한, 스택 내의 전자 이동경로를 향상시키고 GDL과 분리판 사이의 접촉저항을 최소화하기 위하여 금속 박막을 이용하여 GDL-분리판 조합체를 제작하였다. 실험 결과 개발된 GDL-분리판 조합체는 기존의 복합재료 분리판과 비교하여 98% 낮은 전기저항을 갖는 것을 확인하였다.

도금공정에서의 세척수 제어기법에 관한 연구 (A Study on the Rinsing Control Method in the Gilding Process)

  • 김기준
    • 한국산업정보학회논문지
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    • 제9권4호
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    • pp.8-15
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    • 2004
  • 금속의 표면이나 비금속표면에 다른 금속을 사용하여 피막을 만드는 도금 공정은 산과 알칼리를 사용함에 따라 세척 작업으로서 수소 이온 농도(H+)와 수산이온농도(OH+)를 제어하게 된다 따라서, 본 연구에서는 세척수 투입에 따른 수소 이온 농도(H+)와 수산이온농도 (OH+)를 제어하기 위한 여러 가지 제어 기법을 적용하여 최적의 제어기를 설계하고자 하였으며, 이 결과는 세척수를 효율적으로 투입하여 귀중한 수자원을 절약하고, 산과 알칼리의 일정제어로 인하여 제품의 균등한 생산이 가능할 뿐만 아니라 생산 단가를 낮추어 경쟁력에 기여할 것으로 사료된다. 특히, 개발하고자하는 기법은 수학적 모델을 구하기 어려운 공정에서도 적용이 가능하도록 설계하고자 하였으며, 제어 대상의 변화에도 다른 제어 방법 보다 쉽게 알고리즘을 변화시킬 수 있다는 장점이 있도록 하였다.

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Electrical Properties of Alcohol Vapor Sensors Based on Porous Silicon

  • Park, Kwang-Youl;Kang, Kyung-Suk;Kim, Seong-Jeen;Lee, Sang-Hoon;Park, Bok-Gil;Sung, Man-Young
    • 한국전기전자재료학회논문지
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    • 제16권12S호
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    • pp.1232-1236
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    • 2003
  • In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/oxidized PS/PS/P-Si/Al, where the p-Si is etched anisotropically to be prepared into a membrane-shape. We used alcohol gases vaporized from different alcohol (or ethanol) solutions mixed with pure water at 36$^{\circ}C$, similarly with an alcohol breath measurement to check drunk driving. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator-semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.

Dynamics of Nanopore on the Apex of the Pyramid

  • Choi, Seong-Soo;Yamaguchi, Tokuro;Park, Myoung-Jin;Kim, Sung-In;Kim, Kyung-Jin;Kim, Kun-Ho
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.187-187
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    • 2012
  • In this report, the plasmonic nanopores of less than 5 nm diameter were fabricated on the apex of the pyramidal cavity array. The metallic pyramidal pit cavity can also utilized as the plasmonic bioreactor, and the fabricated Au or Al metallic nanopore can provide the controllable translocation speed down using the plasmonic optical force. Initially, the SiO2 nanopore on the pyramidal pit cavity were fabricated using conventional microfabrication techniques. Then, the metallic thin film was sputter-deposited, followed by surface modification of the nanometer thick membrane using FESEM, TEM and EPMA. The huge electron intensity of FESEM with ~microsecond scan speed can provide the rapid solid phase surface transformation. However, the moderate electron beam intensity from the normal TEM without high speed scanning can only provide the liquid phase surface modification. After metal deposition, the 100 nm diameter aperture using FIB beam drilling was obtained in order to obtain the uniform nano-aperture. Then, the nanometer size aperture was reduced down to ~50 nm using electron beam surface modification using high speed scanning FESEM. The followed EPMA electron beam exposure without high speed scanning presents the reduction of the nanosize aperture down to 10 nm. During these processes, the widening or the shrinking of the nanometer pore was observed depending upon the electron beam intensity. Finally, using 200 keV TEM, the diameter of the nanopore was successively down from 10 nm down to 1.5 nm.

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Micromachined ZnO Piezoelectric Pressure Sensor and Pyroelectric Infrared Detector in GaAs

  • Park, Jun-Rim;Park, Pyung
    • Journal of Electrical Engineering and information Science
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    • 제3권2호
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    • pp.239-244
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    • 1998
  • Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.

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