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이현수;한상옥;이덕출
- E2M - 전기 전자와 첨단 소재
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- 제4권3호
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- pp.267-272
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- 1991
본 연구는 MOCDV(Metal Organic Chemical Vapour Deposition)법을 이용한 Y-Ba-C-O계 산화물 초전도체 박막을 제작하여 박막의 조성비와 결정성, 임계온도에 대하여 측정 분석하였다. 이 박막의 조성비는 Y:Ba:Cu=1:0.97:3.39로 나타났으며 임계온도 $T_{c on}$=86K, $T_{c zero}$=61K이다. 연구 결과 우수한 초전도체 박막을 제작하기 위해 계속적인 연구가 필요하며 불순물 잔류도 고려하여야 한다.
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정헌상;송진원;이경섭;전연수;이우기
- 한국전기전자재료학회:학술대회논문집
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- 한국전기전자재료학회 2001년도 춘계학술대회 논문집 센서 박막재료
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- pp.57-60
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- 2001
The characterization of organic Metal/Insulator/Metal(MIM) devices were investigated from LB films. The physicochemical properties of the LB films were by UV absorption spectrum and AFM. We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 2, 10, 30[mN/ml The stable images are probably due to a strong interaction between the monolayer film and glass substrate. We are unable to obtain molecule resolution in images of the films but did see a marked contrast between images of the bare substrate and those with the network structure film deposited onto it.
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양충모;김성권;차재상;박구만
- 조명전기설비학회논문지
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- 제20권4호
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- pp.7-11
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- 2006
본 논문에서는 $Mo/SiO_2/Si(100)$ 기판 위에 MOCVD(Metal-Organic-Chemical-Vapor Deposition)법을 이용하여 C축 방향으로 성장시킨 AIN(Aluminum Nitride) 박막을 이용하여 GHz대역 무선 통신에서 사용할 수 있는 FBAR(Film-Bulk-Acoustic Resonator)을 제작하였다. 제작된 공진부의 공진주파수와 반공진주파수는 각각 3.189[GHz]와 3.224[GHz]으로 측정되었으며, Q값(Quality Factor)과 유효한 전기기계 결합계수(${k_{eff}}^2$)는 각각 24.7과 2.65[%]로 평가되었다. AIN의 증착(Deposition) 조건은 $950[^{\circ}C]$의 기판표면(Substrate) 온도, 20Torr의 압력, 25000의 N/Al의 V/III비로 증착하였다. $4{\times}10^{-5}[\Omega{cm}]$의 Mo 하부전극 고유저항과 $Mo/SiO_2/Si(100)$ 기판 위에 AIN(0002) FWHM(Full-Width at Half-Maximum) 4를 갖는 C축 방향성의 AIN 박막을 성공적으로 성장시켰다. 따라서 증착된 AIN박막의 FWHM값은 GHz대역 무선 통신용 RF(Radio Frequency) 밴드 패스 필터 설계에 유용하게 사용될 것이다.
https://doi.org/10.5207/JIEIE.2006.20.4.007 인용 PDF KSCI

Yang, Wonkyun;Joo, Junghoon
- Applied Science and Convergence Technology
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- 제23권3호
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- pp.139-144
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- 2014
GaN deposition equipment and processes for the fabrication of white LEDs (Light Emitting Diode) using MOCVD (Metal Organic Chemical Vapor Deposition) were numerically modeled to analyze the effects of a reactive gas introduction strategy. The source gases, TMGa and $NH_3$, were injected from a shower head at the top of the chamber; the carrier gases, $H_2$ or $N_2$, were introduced using two types of injection structures: vertical and horizontal. Wafers sat on the holder at a radial distance between 100 mm and 150 mm. The non-uniformity of the deposition rates for vertical and horizontal injection were 4.3% and 3.1%, respectively. In the case of using $H_2$ as a carrier gas instead of $N_2$, the uniform deposition zone was increased by 20%.
https://doi.org/10.5757/ASCT.2014.23.3.139 인용 PDF

김세준;김홍범;성명모
- 한국진공학회:학술대회논문집
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- 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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- pp.211.1-211.1
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- 2013
We fabricate the conductive zinc oxide(ZnO) thin film using UV-enhanced atomic layer deposition. ZnO is semiconductor with a wide band gap(3.37eV) and transparent in the visible region. ZnO can be deposited with various method, such as metal organic chemical vapour deposition, magnetron sputtering and pulsed laser ablation deposition. In this experiment, ZnO thin films was deposited by atomic layer deposition using diethylzinc (DEZ) and D.I water as precursors with UV irradiation during water dosing. As a function of UV exposure time, the resistivity of ZnO thin films decreased dramatically. We were able to confirm that UV irradiation is one of the effective way to improve conductivity of ZnO thin film. The resistivity was investigated by 4 point probe. Additionally, we confirm the thin film composition is ZnO by X-ray photoelectron spectroscopy. We anticipate that this UV-enhanced ZnO thin film can be applied to electronics or photonic devices as transparent electrode.
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