• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.225-228
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• 2002

The adhesion effect between the oxide layer and the metal layer has been studied by RTP anneal. Two types of oxides, BPSG and P-TEOS, were used as a bottom layer under multi-layered metal film. We observe the interface between oxide and metal layer using SEM (scanning electron microscopy), TEM (transmission electron microscopy), AES (auger electron spectroscopy). Adhesion failure was occurred by interfacial reaction between the BPSG oxide and the multi-layered metal film at 650"C RTP anneal. The phosphorus rich layer was observed at interface between BPSG oxide and metal layer by AES and TEM measurements. On the other hand adhesion was a)ways good in the sample used P-TEOS oxide as a bottom layer. We have known that adhesion between BPSG and multi-layered metal film was improved when the sample was annealed below $650^{\circ}C$.TEX>.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.05a
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• pp.7-10
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• 2007

The electron charging and degradation of anode phosphor layers are showed major problems in high electric field with anode electrode of field emission devices. An Al metal layer on the phosphor layer may get rid of these problems. This Al metal layer are formed with the roughness of phosphor surface layer without interlayer and cannot be given rise to enhance the luminance efficiency. In order to enhance the brightness, an anode layer need to be flated between phosphor layer and Al metal layer in anode electrode. After optimizing the anode phosphor layer, an anode layer with Al metal and inter layer increased the brightness and luminescence efficiency 1.5 times more than only phosphor layer in anode.

• ETRI Journal
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• v.45 no.6
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• pp.1056-1064
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• 2023

The optical properties of the materials composing organic light-emitting diodes (OLEDs) are considered when designing the optical structure of OLEDs. Optical design is related to the optical properties, such as the efficiency, emission spectra, and color coordinates of OLED devices because of the microcavity effect in top-emitting OLEDs. In this study, the properties of top-emitting blue OLEDs were optimized by adjusting the thicknesses of the thin metal layer and capping layer (CPL). Deep blue emission was achieved in an OLED structure with a second cavity length, even when the transmittance of the thin metal layer was high. The thin metal film thickness ranges applicable to OLEDs with a second microcavity structure are wide. Instead, the thickness of the thin metal layer determines the optimized thickness of the CPL for high efficiency. A thinner metal layer means that higher efficiency can be obtained in OLED devices with a second microcavity structure. In addition, OLEDs with a thinner metal layer showed less color change as a function of the viewing angle.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.05a
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• pp.29-32
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• 2008

The electron charging and degradation of anode phosphor layers are showed major problems in high electric field with anode electrode of field emission devices. An AI metal layer on the phosphor layer may get rid of these problems. This Hetero-metal-oxide phosphor layer are formed with the roughness of phosphor surface layer without interlayer and cannot be given rise to enhance the luminance efficiency. In order to enhance the brightness, an anode layer need to be flated between phosphor layer and AI metal layer in anode electrode. After optimizing the anode phosphor layer, an anode layer with AI metal and inter layer increased the brightness and luminescence efficiency 1.2 times more than only phosphor laver in anode.

• Journal of the Korean Ceramic Society
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• v.33 no.12
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• pp.1421-1425
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• 1996

Sintered Si3N4 and Inconel composed of Ni(58-63%) Cr(21-25%) Al(1-17%) Mn(<1%) fe(balance) were pressurelessly joined by using Ag-Cu-Ti brazing filler metal at 950℃ and 1200℃ under N2 gas atmosphere of 1atm and their interfacial structures were investigated. In case that the reaction temperature was low as 950℃ its interfacial structure was "Inconel metal/Ti-rich phase layer/brazing filler metal layer/Si3N4 " Ti used as reactive metal existed in between inconel steel and brazing metal and moved to the interface of between brazing filler metal nd Si3N4 according as reaction temperature increased up to 1200℃. The interfacial structure of inconel steel-Si3N4 reacted at 1200℃ was ' inconel metal/Ni-rich phase layer containing of Fe. Cr and Si/Cu-rich phase layer containing of Mn and Si/Si3N4 " Cr Mn, Ni and Fe diffused to the interface of between brazing filler metal and Si3N4 and reacted with Si3N4 The most reactive components of ingredients of inconel metal were Cr and Mn. On the other hand Ti added as reactive components to Ag-Cu eutectic segregated into Ni-rich phase layer,.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.365-368
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• 2002

We investigated the influence of RTP annealing of multi-layered metal films deposited on oxides layer. Two types of oxides, BPSG and P-7205, were used as a bottom layer under multi-layered metal film. The bonding was not good in metal/BPSG/Si samples because adhesion between metal layer and BPSG oxide layer was poor by interfacial reaction during RTP annealing above 650$^{\circ}C$. On the other hand bonding was always good in metal/ P-TEOS /Si samples regardless of annealing temperature. We observed the interface between oxide and metal layers using AES and TEM. The phosphorus and oxygen profile in interface between metal and oxide layers were different in metal/BPSG/Si and metal/P-TEOS/Si samples. We have known that the properties of interface was improved in metal/BPSG/Si samples when the sample was annealed below 650$^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.6
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• pp.1-7
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• 1993

After the 1%S-Al metal is deposited, a thin oxide is formed thereon. Then, a single charged Argon(Ar$^{+}$) is ion implanted into the oxide layer, thereby causing the metal grain in the upper surface of the metal layer to become amorphous. Consequently, the grain size will be reduced and the rough surface of the metal layer flattened. However, the remainder of the metal layer beneath the upper surface thereof will still exhibit large grain size and low resistance, because the Argon ion is only implanted to characterized by a dual-sized grain structure which served to reduce interlayer stress, thereby decreasing the rate of stress migration, and to lower the resistivity of the metal line, thereby enhancing the electromigration characteristic thereof. Experiments have shown that the metal line exhibits a metal migration rate which is approximately 700% less than the control group and a standard deviation which is approximately 200% less than these group.p.

• Laser Solutions
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• v.7 no.1
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• pp.37-47
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• 2004

Laser-assisted selective infiltration is a new method of building metal layers to make metal parts layer by layer, in which superheated microscopic metal droplets are infiltrated into a laser-preheated layer of microscopic metal powders. In this work, the selective infiltration of a low melting-point metal, Sn-37Pb wt%, was conducted to investigate the effects of such dominant parameters as superheating temperature, Nd:YAG laser power for preheating, substrate temperature, etc. The optimal conditions for successful selective infiltration of a single layer of microscopic metal powder were experimentally obtained

• Journal of the Korean institute of surface engineering
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• v.43 no.3
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• pp.148-153
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• 2010

Transparent conducting films having a hybrid structure of GZO/Metal/GZO were prepared on glass substrates by sequential deposition using DC magnetron sputtering. Silver, copper, aluminum and zinc thin films were used as the intermediate metal layers in the hybrid structure. The electrical and optical properties of hybrid transparent conducting films were investigated with varying the thickness of metal layer or GZO layers. With increasing the metal thickness, hybrid films showed a noticeable improvement of the electrical conductivity, which is mainly dependent on the electrical property of the metal layer. GZO(40 nm)/Ag(10 nm)/GZO(40 nm) film exhibits a resistivity of $5.2{\times}10^{-5}{\Omega}{\cdot}cm$ with an optical transmittance of 82.8%. For the films with Zn interlayer, only marginal reduction in the resistivity was observed. Furthermore, unlike other metals, hybrid films with Zn interlayer showed a decrease in the resistivity with increasing the GZO thickness. The optimal thickness of GZO layer for anti-reflection effect at a given thickness of metal (10 nm) was found to be critically dependent on the refractive index of the metal. In addition, x-ray diffraction analysis showed that the insertion of Ag layer resulted in the improvement of crystallinity of GZO films, which is beneficial for the electrical and optical properties of hybrid-type transparent conducting films.

• Nuclear Engineering and Technology
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• v.51 no.4
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• pp.996-1007
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• 2019

We investigated the influence of the aspect ratio (H/R) of the oxide layer on the reactor vessel heating in three-layer configuration. Based on the analogy between heat and mass transfers, we performed mass transfer experiments to achieve high Rayleigh numbers ranging from $6.70{\times}10^{10}$ to $7.84{\times}10^{12}$. Two-dimensional (2-D) semi-circular apparatuses having the internal heat source were used whose surfaces of top, bottom and side simulate the interfaces of the oxide layer with the light metal layer, the heavy metal layer, and the reactor vessel, respectively. Multi-cell flow pattern was identified when the H/R was reduced to 0.47 or less, which promoted the downward heat transfer from the oxide layer and possibly mitigated the focusing effect at the upper metallic layer. The top boundary condition greatly affected the natural convection of the oxide layer due to the presence of secondary flows underneath the cold light metal layer.