• Journal of the Korean GEO-environmental Society
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• v.9 no.4
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• pp.47-52
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• 2008

In this study, it was analyzed the soil components and elution characteristics of heavy metal ions in sediment samples to examine the effect of sediments embedded in Andong and Imha reservoirs on water quality. Major elements of sediments were shown to be Al, Si, K, and Fe by EDS analysis and major soil components of the collected 6 different sediments were illite (I), kaolinite (Ka), quartz (Q) and feldspar (F). And especially quartz took up a considerable part of sediments by XRD analysis. The total concentrations of Zn, As, Cr, Cu and Pb in sediments of Andong reservoir were relatively higher than those of Imha reservoir. The elution property of heavy metal from sediments had various aspects according to pH. Among the heavy metals in Andong reservoir sediments, As and Zn were significantly eluted at pH 6 compared with the other heavy metals. In the case of the adsorption tests using the sediments, the adsorptive capacities of Zn, Cd and Cu were very weak, on the while those of Pb and Cr were high.

• Journal of Microbiology
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• v.41 no.3
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• pp.239-247
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• 2003

The LRV1-4 capsid protein possesses an endoribonuclease activity that is responsible for the single site-specific cleavage in the 5' untranslated region (UTR) of its own viral RNA genome and the formation of a conserved stem-loop structure (stem-loop IV) in the UTR is essential for the accurate RNA cleavage by the capsid protein. To delineate the nucleotide sequences, which are essential for the correct formation of the stem-loop structure for the accurate RNA cleavage by the viral capsid protein, a wildtype minimal RNA transcript (RNA 5' 249-342) and several synthetic RNA transcripts encoding point-mutations in the stem-loop region were generated in an in vitro transcription system, and used as substrates for the RNA cleavage assay and RNase mapping studies. When the RNA 5' 249-342 transcript was subjected to RNase T1 and A mapping studies, the results showed that the predicted RNA secondary structure in the stem-loop region using FOLD analysis only existed in the presence of Mg$\^$2＋/ ions, suggesting that the metal ion stabilizes the stem-loop structure of the substrate RNA in solution. When point-mutated RNA substrates were used in the RNA cleavage assay and RNase T1 mapping study, the specific nucleotide sequences in the stem-loop region were not required for the accurate RNA cleavage by the viral capsid protein, but the formation of a stem-loop like structure in a region (nucleotides from 267 to 287) stabilized by Mg$\^$2＋/ ions was critical for the accurate RNA cleavage. The RNase T1 mapping and EMSA studies revealed that the Ca$\^$2＋/ and Mn$\^$2＋/ ions, among the reagents tested, could change the mobility of the substrate RNA 5' 249-342 on a gel similarly to that of Mg$\^$2＋/ ions, but only Ca$\^$2＋/ ions identically showed the stabilizing effect of Mg$\^$2＋/ ions on the stem-loop structure, suggesting that binding of the metal ions (Mg$\^$2＋/ or Ca$\^$2＋/) onto the RNA substrate in solution causes change and stabilization of the RNA stem-loop structure, and only the substrate RNA with a rigid stem-loop structure in the essential region can be accurately cleaved by the LRV1-4 viral capsid protein.

• The Korean Journal of Mycology
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• v.22 no.2
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• pp.122-129
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• 1994

The role of metal ions for the activity of the mitochondrial $F_1-ATPase$ was studied. Removal of non-heme iron ion from the mitochondria by dialysis against chelating agents, 10 mM ethylenediaminetetraacetic acid(EDTA) and 10 mM o-phenanthroline(o-Phe), led to 56% and 49% inactivation of the enzyme, respectively. The enzyme dialyzed against EDTA was reactivated 81% by the addition of 0.5 mM $Fe^{3+}$ and 70% by 0.5 mM $Mg^{2+}$. But, $Fe^{2+}$ did not reactivate the enzyme. Coexistence of 0.5 mM $Fe^{2+}$ and 0.5 mM $Mg^{2+}$ resulted in 95% reactivation of the enzyme, while $Fe^{3+}$ with 0.5 mM $Mg^{2+}$ did not reactivate the enzyme like the effect of $Fe^{2+}$ alone. The enzyme dialyzed against o-Phe showed the similar results. These data showed that $Fe^{3+}$ is predominantly required for the activity of the mitochondrial $F_1-ATPase$ in Lentinus edodes and stimulated the activity of it by $Mg^{2+}$. $Fe^{3+}$ and $Mg^{2+}$ increased enzyme's affinity for substrate, decreasing the Km value 1.67 mM to 0.65 mM.

• Journal of Microbiology and Biotechnology
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• v.18 no.4
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• pp.663-669
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• 2008

The solvent-tolerant bacterium Enterobacter sp. VKGH12 is capable of utilizing n-butanol and contains an $NAD^+$-dependent n-butanol dehydrogenase (BDH). The BDH from n-butanol-grown Enterobacter sp. was purified from a cell-free extract (soluble fraction) to near homogeneity using a 3-step procedure. The BDH was purified 15.37-fold with a recovery of only 10.51, and the molecular mass estimated to be 38 kDa. The apparent Michaelis-Menten constant ($K_m$) for the BDH was found to be 4 mM with respect to n-butanol. The BDH also had a broad range of substrate specificity, including primary alcohols, secondary alcohols, and aromatic alcohols, and exhibited an optimal activity at pH 9.0 and $40^{\circ}C$. Among the metal ions studied, $Mg^{2+}$ and $Mn^{2+}$ had no effect, whereas $Cu^{2+},\;Zn^{2+}$, and $Fe^{2+}$ at 1 mM completely inhibited the BDH activity. The BDH activity was not inhibited by PMSF, suggesting that serine is not involved in the catalytic site. The known metal ion chelator EDTA had no effect on the BDH activity. Thus, in addition to its physiological significance, some features of the enzyme, such as its activity at an alkaline pH and broad range of substrate specificity, including primary and secondary alcohols, are attractive for application to the enzymatic conversion of alcohols.

• Korean journal of food and cookery science
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• v.12 no.4
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• pp.506-510
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• 1996

The stability of prickly pear color as affected by pH, metal ions, sugar and acids was studied. The color of prickly pear was most stable at pH 4 and 5. Metal ions (Fe, Cu) at a level of 100 ppm caused a decrease in stability compared to that of the control, whereas pigment of prickly pear was stable at 100 ppm of Sn ion And the color of prickly pear was stable at 0.15 M fructose. Both 100 and 500 ppm ascorbic acid had the greatest effect on stability, while citric acid, phosphoric acid and tartaric acid had no effect on stability compared to that of the control. Based on the data presented, it was concluded that under selected conditions prickly pear pigment should find application as natural food colorants.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.289.2-289.2
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• 2016

In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.5
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• pp.1-7
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• 2002

Deep sub-micron bulk CMOS circuits require gate electrode materials such as metal silicide and titanium silicide for gate oxides. Many authors have conducted research to improve the quality of the sub-micron gate oxide. However, few have reported on the electrical quality and reliability of an ultra-thin gate. In this paper, we will recommend a novel shallow trench isolation structure and a two-step TiS $i_2$ formation process to improve the corner metal oxide semiconductor field-effect transistor (MOSFET) for sub-0.1${\mu}{\textrm}{m}$ VLSI devices. Differently from using normal LOCOS technology, deep sub-micron CMOS devices using the novel shallow trench isolation (STI) technology have unique "inverse narrow-channel effects" when the channel width of the device is scaled down. The titanium silicide process has problems because fluorine contamination caused by the gate sidewall etching inhibits the silicide reaction and accelerates agglomeration. To resolve these Problems, we developed a novel two-step deposited silicide process. The key point of this process is the deposition and subsequent removal of titanium before the titanium silicide process. It was found by using focused ion beam transmission electron microscopy that the STI structure improved the narrow channel effect and reduced the junction leakage current and threshold voltage at the edge of the channel. In terms of transistor characteristics, we also obtained a low gate voltage variation and a low trap density, saturation current, some more to be large transconductance at the channel for sub-0.1${\mu}{\textrm}{m}$ VLSI devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.153-153
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• 2011

유리나 폴리머를 기판으로 하는 TFT(Thin film transistor), solar cell에서는 낮은 공정 온도에서($200{\sim}500^{\circ}C$) amorphous semiconductor thin film을 poly-crystal semiconductor thin film으로 결정화 시키는 기술이 매우 중요하게 대두 되고 있다. Ge은 Si에 비해 높은 carrier mobility와 낮은 녹는점을 가지므로, 비 저항이 낮을 뿐만 아니라 더 낮은 온도에서 결정화 할 수 있다. 하지만 일반적으로 쓰이는 Ge의 결정화 방법은 비교적 높은 열처리 온도를 필요로 하거나, 결정화된 원소에 남아있는 metal이 불순물 역할을 한다는 문제점, 그리고 불균일한 결정크기를 만든다는 단점이 있었다. 그 중에서도 현재 가장 많이 쓰이고 있는 MIC, MILC는 metal과 a-Ge이 접촉되는 interface나, grain boundary diffusion에 의해 핵 생성이 일어나고, 결정이 성장하는 메커니즘을 가지고 있으므로 단순 증착과 열처리 만으로는 앞서 말한 단점을 극복하는데 한계를 가지고 있다. 이에 PIII&D 장비를 이용하면, 이온 주입된 원소들이 모재와 반응 할 수 있는 표면적이 커짐으로 핵 생성을 조절 할 수 있을 뿐만 아니라, 이온 주입 시 발생하는 self annealing effect로 결정 크기까지도 조절할 수 있다. 또한 이러한 모든 process가 한 진공 장비 내에서 이루어지므로 장비의 단순화와, 공정간 단계별로 발생하는 불순물과 표면산화를 막을 수 있으므로 절연체 위에 저항이 낮고, hall mobility가 높은 poly-crystalline Ge thin film을 만들 수 있다. 본 연구에서는, 주로 핵 생성과정에서 seed를 만드는 이온주입 조건과, 결정 성장이 일어나는 증착 조건에 따라서 Ge의 결정방향과 크기가 많은 차이를 보이는데, 이는 HR-XRD(High resolution X-ray Diffractometer)와 Raman spectroscopy를 이용하여 측정 하였으며, SEM과 AFM으로 결정의 크기와 표면 거칠기를 측정하였다. 또한 Hall effect measurement를 통해 poly-crystalline thin film 의 저항과 hall mobility를 측정하였다.

• Applied Biological Chemistry
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• v.47 no.2
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• pp.244-250
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• 2004

Biological activities and application of Sanguisorbae officinalis L. were investigated. In the enzymological physiological activities, the electron donating ability (EDA) was 54.9% in 10 ppm and it was over 90% over 50 ppm and SOD-like activity was high as 65.4% in 1000 ppm, it was gradual increased. As inhibitory effect of xanthine oxidase, it was 17.9% in 200 ppm and little low as 36.9% in 500 ppm and inhibitory effect of tyrosinase. As the result of measuring the lipid oxidation, all the concentrations of medical ion treatments had the ability to keep it from acidification and metal ion blocking effects about the lipid oxidation promoting factors ($Fe^{2+}$ and $Cu^{2+}$), $Fe^{2+}$ was better than $Cu^{2+}$ and all concentrations of medical ion treatments was 40% in 50 ppm. When it was applied into normal skin-softener it showed safe effect so that we can expect that as the natural material of cosmetics.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.429-429
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• 2012

To investigate the gettering effect of B-doped n-type monocrystalline silicon wafer, we made the p-n junction by diffusing boron into n-type monocrystalline Si substrate and then oxidized the boron doped n-type monocrystalline silicon wafer by in-situ wet and dry oxidation. After oxidation, the minority carrier lifetime was measured by using microwave photoconductance and the sheet resistance by 4-point probe, respectively. The junction depth was analyzed by Secondary Ion Mass Spectrometry (SIMS). Boron diffusion reduced the metal impurities in the bulk of silicon wafer and increased the minority carrier lifetime. In the case of wet oxidation, the sheet resistance value of ${\sim}46{\Omega}/{\Box}$ was obtained at $900^{\circ}C$, depostion time 50 min, and drive-in time 10 min. Uniformity was ~7% at $925^{\circ}C$, deposition time 30 min, and drive-in time 10 min. Finally, the minority carrier lifetime was shown to be increased from $3.3{\mu}s$ for bare wafer to $21.6{\mu}s$ for $900^{\circ}C$, deposition 40 min, and drive-in 10 min condition. In the case of dry oxidation, for the condition of 50 min deposition, 10 min drive-in, and O2 flow of 2000 SCCM, the minority carrier lifetime of 16.3us, the sheet resistance of ${\sim}48{\Omega}/{\Box}$, and uniformity of 2% were measured.