• 제목/요약/키워드: metal hole array

검색결과 25건 처리시간 0.023초

Light transmission in nanostructures

  • Kim, D. S.;Park, Q-H.;S. H. Han;Ch. Lienau
    • 한국진공학회지
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    • 제12권S1호
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    • pp.113-115
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    • 2003
  • We investigate transmission of light in nanoscale structures. We present spatial and temporal domain measurements of the dephasing of surface plasmon excitations in metal films with periodic nano-hole arrays. By probing coherent spatial SP propagation lengths of a few f1. $\mu$m and an ultrafast decay of the SP polarization on a 10 fs timescale, we demonstrate that the SP transmission peaks are homogeneously broadened by the SP radiative lifetime. The pronounced wavelength and hole size dependence of the dephasing rate shows that the microscopic origin of the conversion of SP into light is a Rayleigh-like scattering by the periodic hole array. We have experimentally studied the dephasing of surface plasmon excitations in metallic nano-hole arrays. By relating nanoscopic SP propagation, ultrafast light transmission and optical spectra, we demonstrate that the transmission spectra of these plasmonic bandgap structures are homogeneously broadened. The spectral line shape and dephasing time are dominated by Rayleigh scattering of SP into light and can varied over a wide range by controlling the resonance energy and/or hole radius. This opens the way towards designing SP nano-optic devices and spatially and spectrally tailoring light -matter interactions on nanometer length scales.

금 나노홀 어레이 제작을 위한 집속 이온빔의 공정 최적화 (Optimal Determination of the Fabrication Parameters in Focused Ion Beam for Milling Gold Nano Hole Array)

  • 조은별;권희민;이희선;여종석
    • 한국진공학회지
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    • 제22권5호
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    • pp.262-269
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    • 2013
  • 집속 이온빔 장비는 나노크기의 패턴을 제작하는 한 방법이지만, 정밀한 제작은 쉽지 않다. 그러므로 집속 이온빔 장비로 샘플을 제작할 때 고려해야 하는 공정 조건을 정리하여 초보자도 샘플제작이 가능하도록 도움을 주고자 한다. 본 장비로 원하는 나노크기의 패턴을 제작하기 위해서 집속 이온빔 장비의 공정변수들을 최적화 하는 과정이 중요하다. 가공할 때 고려해야 하는 변수에는 빔 전류량(빔 크기)과 도즈(빔 지속시간)가 있다. 도즈를 결정한 후에 패턴을 제작하는데 걸리는 시간과 패턴의 크기를 고려하여 빔 전류량을 선택하면 된다. 여기서 도즈는 제작하려는 나노크기의 패턴의 금속 두께에 따라 결정이 된다. 이 논문에서 최적화한 1 pA의 빔 전류와 $0.1nC/{\mu}m^2$의 도즈의 공정조건에서 100 nm 두께의 금 박막 위에 타원형의 구멍을 정밀하게 제작할 수 있다.

유한요소해석을 이용한 열간프레스성형 적용 로어 컨트롤 암의 성형품질 조건 최적화 (Optimization of Conditions of Forming Quality for Hot-press-formed Lower Control Arm Using Finite Element Analysis)

  • 손현성;최병근
    • 한국자동차공학회논문집
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    • 제19권1호
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    • pp.45-50
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    • 2011
  • Hot-Press-Forming (HPF), an advanced sheet metal forming method using stamping at a high temperature of about $900^{\circ}C$ and quenching in an internally cooled die set, is one of the most successful forming process in producing crash-resistant parts such as pillars and bumpers with complex shape, ultrahigh strength, and minimum springback. To optimize conditions of a forming quality in HPF process and secure a safe product without any failures, such as fractures and wrinkling, the simulations based on the coupled thermo-mechanical analysis for a hot-press-formed lower control arm are applied with Taguchi's orthogonal array experiment. Three factor variables - the friction coefficient, blank shape, and hole location for burring - are selected to be optimized. The most effective condition of a forming quality for a hot-press-formed lower control arm is suggested. The simulation results are confirmed with experimental ones.

Color Tunable Nanostructures by Polarization Control for Display Applications

  • Cho, Eun-Byurl;Ko, Yeong-Il;Yeo, Jong-Souk
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.567-567
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    • 2013
  • Surface plasmon resonance is the enhancement of electromagnetic wave caused by oscillation on the metal and dielectric interfaces. Surface plasmons with nanohole arrays provides an enhancedresonance for the specific wavelengths of interests. Asymmetric array of nanoscale structures can enable orientation dependent shift of resonance wavelengths when combined with the control of polarization for incident visible light, thus providing color tunability. Appropriate lattice constants along the direction of polarization in rectangular nanohole arrays can determine the resonance condition generating red (R), green (G), and blue (B) colors and potentially be applied to display applications. In ourprevious report, we have optimized the ion beam nanomachining conditions to fabricate the nanostructures on the metal film. We apply the fabrication conditions to make nanoscale hole arrays using 100 nm thick gold layer on the glass substrate with the optimal design of periodicities along x, y, and diagonal directions of a=440 nm, b=520 nm, c=682 nm, and the hole diameter of d=200 nm. Using the reflective light in dark field mode of optical microscope, we can observe different colors. When the polarizer is paralleled along a, b, or c direction, the represented color is changed to R, G, and B, respectively. We further map the color using i1 to correlate the conditions of the nanohole arrays with their characteristic color.

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Glass/Al/$SiO_2$/a-Si 구조에서 마이크론 크기의 구멍을 통한 금속유도 실리콘 결정화 특성 (Characteristics of metal-induced crystallization (MIC) through a micron-sized hole in a glass/Al/$SiO_2$/a-Si structure)

  • 오광환;정혜정;지은옥;김지찬;부성재
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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    • pp.59.1-59.1
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    • 2010
  • Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) is studied with the structure of a glass/Al/$SiO_2$/a-Si, in which the $SiO_2$ layer has micron-sized laser holes in the stack. An oxide layer between aluminum and a-Si thin films plays a significant role in the metal-induced crystallization (MIC) process determining the properties such as grain size and preferential orientation. In our case, the crystallization of a-Si is carried out only through the key hole because the $SiO_2$ layer is substantially thick enough to prevent a-Si from contacting aluminum. The crystal growth is successfully realized toward the only vertical direction, resulting a crystalline silicon grain with a size of $3{\sim}4{\mu}m$ under the hole. Lateral growth seems to be not occurred. For the AIC experiment, the glass/Al/$SiO_2$/a-Si stacks were prepared where an Al layer was deposited on glass substrate by DC sputter, $SiO_2$ and a-Si films by PECVD method, respectively. Prior to the a-Si deposition, a $30{\times}30$ micron-sized hole array with a diameter of $1{\sim}2{\mu}m$ was fabricated utilizing the femtosecond laser pulses to induce the AIC process through the key holes and the prepared workpieces were annealed in a thermal chamber for 2 hours. After heat treatment, the surface morphology, grain size, and crystal orientation of the polycrystalline silicon (pc-Si) film were evaluated by scanning electron microscope, transmission electron microscope, and energy dispersive spectrometer. In conclusion, we observed that the vertical crystal growth was occurred in the case of the crystallization of a-Si with aluminum by the MIC process in a small area. The pc-Si grain grew under the key hole up to a size of $3{\sim}4{\mu}m$ with the workpiece.

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세라믹 정형 가공을 위한 성형기 개발 (Development of Thermal Imprint System for Net-Shape Manufacturing of Multi-layer Ceramic Structure)

  • 박철규;임성한;홍주표;이종길;윤성만;고장혁
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2008년도 추계학술대회 논문집
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    • pp.401-404
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    • 2008
  • In the present investigation, a high precision thermal imprint system for micro ceramic products was developed and the net-shape manufacturing of multi-layer ceramic reflector for LED (Light Emitting Diode) was conducted with a precision metal die. Workpiece used in the present investigation were the multi-layer laminated ceramic sheets with pre-punched holes. The cavity with arbitrary angle was formed on the circular and rectangular holes of the ceramic sheets. During the imprinting process, the ambient temperature of the imprint system was kept over the transition temperature of the ceramic sheet and then rapidly cooled. The results in this paper show that the present method can be successfully applied to the fabrication of very small size hole array for ceramic reflector in a one step operation.

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A Study on the Optimized Copper Electrochemical Plating in Dual Damascene Process

  • Yoo, Hae-Young;Chang, Eui-Goo;Kim, Nam-Hoon
    • Transactions on Electrical and Electronic Materials
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    • 제6권5호
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    • pp.225-228
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    • 2005
  • In this work, we studied the optimized copper thickness in Cu ECP (Electrochemical Plating). In order to select an optimized Cu ECP thickness, we examined Cu ECP bulge (bump, hump or over-plating amount), Cu CMP dishing and electrical properties of via hole and line trench over dual damascene patterned wafers split into different ECP Cu thickness. In the aspect of bump and dishing, the bulge increased according as target plating thickness decreased. Dishing of edge was larger than center of wafer. Also in case of electrical property, metal line resistance distribution became broad gradually according as Cu ECP thickness decreased. In conclusion, at least $20\%$ reduced Cu ECP thickness from current baseline; $0.8\;{\mu}m$ and $1.0\;{\mu}m$ are suitable to be adopted as newly optimized Cu ECP thickness for local and intermediate layer.

광파장 이하 주기를 갖는 금속 격자형 컬러필터 (Color Filter Based on a Sub-wavelength Patterned Metal Grating)

  • 이홍식;윤여택;이상신;김상훈;이기동
    • 한국광학회지
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    • 제18권6호
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    • pp.383-388
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    • 2007
  • 본 논문에서는 광파장 이하의 주기를 갖는 금속 격자형 가시광선 대역 컬러필터를 제안하고 구현하였다. 이 소자는 쿼츠 기판 위의 알루미늄 금속 층에 원형 홀이 2차원으로 배열된 격자로 구성되어 있다. 격자의 구조 파라미터 즉, 금속 박막 두께, 격자 주기, 홀 크기, 홀 구성 물질의 굴절률 등이 필터의 전달특성에 미치는 영향을 분석하여 소자를 설계하였다. 특히, 격자 홀을 구성하는 물질의 굴절률을 조절함으로써 필터의 특성을 최적화하고자 시도하였다. 본 논문에서는 전자빔 직접 기록 방식을 도입하여 두 개의 소자를 구현하였는데, 이들의 설계 파라미터를 살펴보면 격자 높이는 50 nm로 동일하며, 주기는 각각 340 nm와 260 nm였다. 측정된 결과를 살펴보면, 주기가 $\Lambda=340nm$인 소자의 경우에 중심파장은 680 nm이고 최대 투과율은 57%였으며, 주기가 $\Lambda=260nm$인 소자의 경우에는 중심파장이 550 nm이고 최대 투과율을 50%였다. 특히, 계산 결과를 통하여 격자 홀을 기판과 동일한 굴절률과 동일한 물질로 채움으로써 투과효율이 15% 이상 증가함을 확인하였다.

이온빔 나노 패터닝을 위한 양극산화 알루미나의 이온빔 투과 (Ion Transmittance of Anodic Alumina for Ion Beam Nano-patterning)

  • 신상원;이종한;이성구;이재용;황정남;최인훈;이관희;정원용;문현찬;김태곤;송종한
    • 한국진공학회지
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    • 제15권1호
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    • pp.97-102
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    • 2006
  • 양극 산화된 알루미나 (anodized aluminum oxide : AAO)는 균일하고 일정한 크기의 나노기공 패턴을 지니고 있다. AAO를 이온빔 나노 patterning을 위한 이온조사 시 마스크로서 이용하기 위해 AAO 나노 기공을 통과하는 이온빔의 투과율(AAO에 입사한 이온에 대한 투과이온의 양의 비)을 측정하였다. Al bulk foil을 양극 산화하여 두께가 $4{\mu}m$이고 종횡비(두께와 기공의 지름의 비)가 각각 200:1, 100:1 인 AAO를 Goniometer에 부착하여 500 keV의 $O^{2+}$ 이온빔에 대해 나노기공을 정렬시킨 후, 기울임 각에 따른 투과율을 측정한 결과, 종횡비가 200:1, 100:1 일 때 투과율은 각각 약 $10^{-8},\;10^{-4}$로 거의 이온빔이 투과하지 못하였다. 반면에 $SiO_2$ 위에 증착된 Al 박막으로 양극산화하여 종횡비가 5:1인 AAO의 이온빔 투과율은 0.67로 투과율이 현저히 향상되었다. 높은 종횡비를 갖는 AAO의 경우에는 범과 AAO 기공의 정렬이 쉽지 않은데다 알루미나의 비전도성으로 인한 charge-up 현상으로 인해 이온빔이 극히 투과하기 어렵기 때문이다. 실제로 80 keV의 Co 음이온을 종횡비 5:1인 AAO에 조사시킨 후에는 AAO 나노기공과 동일한 크기의 나노 구조체가 형성됨을 주사전자현미경(scanning electron microscopy: SEM) 관찰을 통하여 확인하였다.

Analysis of Surface Plasmon Resonance on Periodic Metal Hole Array by Diffraction Orders

  • 황정우;윤수진;강상우;노삼규;이상준
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.176-177
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    • 2013
  • Surface plasmon polaritons (SPPs) have attracted the attention of scientists and engineers involved in a wide area of research, microscopy, diagnostics and sensing. SPPs are waves that propagate along the surface of a conductor, usually metals. These are essentially light waves that are trapped on the surface because of their interaction with the free electrons of conductor. In this interaction, the free electrons respond collectively by oscillating in resonance with the light wave. The resonant interaction between the surface charge oscillation and the electromagnetic field of the light constitutes the SPPs and gives rise to its unique properties. In this papers, we studied theoretical and experimental extraordinary transmittance (T) and reflectance (R) of 2 dimensional metal hole array (2D-MHA) on GaAs in consideration of the diffraction orders. The 2d-MHAs was fabricated using ultra-violet photolithography, electron-beam evaporation and standard lift-off process with pitches ranging from 1.8 to $3.2{\mu}m$ and diameter of half of pitch, and was deposited 5-nm thick layer of titanium (Ti) as an adhesion layer and 50-nm thick layer of gold (Au) on the semiinsulating GaAs substrate. We employed both the commercial software (CST Microwave Studio: Computer Simulation Technology GmbH, Darmstadt, Germany) based on a finite integration technique (FIT) and a rigorous coupled wave analysis (RCWA) to calculate transmittance and reflectance. The transmittance was measured at a normal incident, and the reflectance was measured at variable incident angle of range between $30^{\circ}{\sim}80^{\circ}$ with a Nicolet Fourier transmission infrared (FTIR) spectrometer with a KBr beam splitter and a MCT detector. For MHAs of pitch (P), the peaks ${\lambda}$ max in the normal incidence transmittance spectra can be indentified approximately from SP dispersion relation, that is frequency-dependent SP wave vector (ksp). Shown in Fig. 1 is the transmission of P=2.2 um sample at normal incidence. We attribute the observation to be a result of FTIR system may be able to collect the transmitted light with higher diffraction order than 0th order. This is confirmed by calculations: for the MHAs, diffraction efficiency in (0, 0) diffracted orders is lower than in the (${\pm}x$, ${\pm}y$) diffracted orders. To further investigate the result, we calculated the angular dependent transmission of P=2.2 um sample (Fig. 2). The incident angle varies from 30o to 70o with a 10o increment. We also found the splitting character on reflectance measurement. The splitting effect is considered a results of SPPs assisted diffraction process by oblique incidence.

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