• Title/Summary/Keyword: metal film

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Metallization of Polymers Modified by Ton-Assisted Reaction (IAR)

  • J.S. Cho;Bang, Wan-Keun;Kim, K.H.;Sang Han;Y.B. Sun;S.K. Koh
    • Journal of the Microelectronics and Packaging Society
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    • v.8 no.1
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    • pp.53-59
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    • 2001
  • Surfaces of PTFE and PVDF were modified by ion-assisted reaction (IAR) in which 1 keV $Ar^{+}$ ions were irradiated on the surface of the polymer with varying ion dose in an oxygen gas environment, and Cu, Pt, Al and Ag thin films were deposited on the modified polymers. Wettability of the modified polymers was largely improved by the formation of hydrophilic groups due to chemical reaction between polymer surface and the oxygen gas during IAR. The change in wettability in the modified polymers was also related to the change in surface morphology and roughness. Adhesion between metal films and polymers modified by IAR was significantly improved, so that no detachment was possible in the $Scotch^{TM}$ tape test. The increase of adhesion strength between the metal film and the modified PVDF was mainly attributed to the formation of hydrophilic groups, which interacted with the metal film. In the case of the modified PTFE, the enhanced adhesion to metal film could be explained by the change in surface morphology together with the formation of hydrophilic groups. The electrical properties of the metal films on the modified polymers were also investigated.

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A study on the electrical switching properties of oxide metal (산화금속의 전기적 스위칭 특성 연구)

  • Choi, Sung-Jai;Lee, Won-Sik
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.9 no.3
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    • pp.173-178
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    • 2009
  • We have investigated the electrical properties of oxide metal thin film device. The device has been fabricated top-top electrode structure and its transport properties are measured in order to study the resistance change. Electrical properties with linear voltage sweep on a electrodes are used to show the variation of resistance of oxide metal thin film device. Fabricated oxide metal thin film device with MIM structure is changed from a low conductive Off-state to a high conductive On-state by the external linear voltage sweep. The $Si/SiO_2/MgO$ device is switched from a high resistance state to a low resistance state by forming. Consequently, we believe oxide metal is a promising material for a next-generation nonvolatile memory and other electrical applications.

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Enhanced Light Transmittance of Densely Packed Metal Nanoparticle Layers (밀집된 금속 나노 입자 레이어의 광학 특성)

  • Jeon, Hyunji;Choi, Jinnil
    • Korean Journal of Materials Research
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    • v.30 no.12
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    • pp.701-708
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    • 2020
  • Irradiation of the metal nanoparticles causes local plasmon resonance in a specific wavelength band, which can improve the absorption and scattering properties of a structure. Since noble metal nanoparticles have better resonance effects than those of other metals, it is easy to identify plasmonic reactions and this is advantageous to find the optical tendency. Compared to having a particle gap or randomly arranged particle structures, densely and evenly packed structures can exhibit more uniform optical properties. Using the uniform properties, the structure can be applied to optical filtering applications. Therefore, in this paper, validation tests about metal nanoparticles and thin film structures are conducted for more accurate analysis. The optical properties of monolayer and bilayer noble metal nanoparticle structures with different diameters, packed in a uniform array, are investigated and their optical trends are analyzed. In addition, a thin film structure under identical conditions as metal nanoparticle structure is evaluated to confirm the improved optical characteristics.

Design of a C-shaped nano-aperture in the Ag film (은 필름에서의 C형 나노 개구 설계)

  • Park, Sin-Jeung;Hahn, Jae-Won
    • 정보저장시스템학회:학술대회논문집
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    • 2005.10a
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    • pp.38-39
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    • 2005
  • A new C-aperture is needed in the Ag film because general metal films don't alternate with the PEC film. In this paper, using FDTD method and the Drude-Lorentz metal model, a new C-aperture is designed in the Ag film and the 40nm-beam size and the $7\%$ near-field transmission efficiency are obtained at 28nm distance from the aperture. Its near-field transmission is about 1000 times larger than that of a 54 nm${\times}$54 nm square aperture.

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New Method of Gas Barrier Coating on Plastic Substrate for Flexible Display

  • Hwang, Hee-Nam;Choi, Jae-Moon;Kim, In-Sun;Park, Jong-Rak
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.985-987
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    • 2004
  • A plastic substrate for flexible display is developed. The gas barrier property in the substrate is improved through depositing metal and metal oxide multi layer on plastic film by PVD process. The metal/metal-oxide multiplayer on plastic film shows excellent gas barrier property and optical property.

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Study on electrical characteristics of metal-insulator-metal diodes (금속-절연체-금속다이오드의 전기적 특성에 관한 연구)

  • 장재명;백수현;민남기
    • 전기의세계
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    • v.31 no.3
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    • pp.218-225
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    • 1982
  • Metal-Oxide-Metal thin film diodes have been fabricated on the glass substrates by conventional vacuum evaporation method, and the electrical properties, primarily current-voltage characteristics of diodes, have been discussed in the light of various conduction theories presented so far. The experimental results were ploted in the different figures according to the assumed theory, and the characteristic coefficients peculior to these theories were estimated from the function dependence of current (I) upon voltage (V), temperature (T) and oxide film thickness (d).

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LUBRICATION AND SURFACE DISTRESS OF LOADED TOOTH FLANK OF GEARS

  • Kubo, Arzoh
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 1991.06a
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    • pp.1-30
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    • 1991
  • The lubrication state between contacting bodies with rolling and sliding under loaded condition is generally understood by the conception shown in Figure 1. When the lubricating oil film formation between facing bodies is good enough to separate these bodies by the hydrodynamic pressure, this state is called by the expression of "hydrodynamic lubrication". The thickness of oil film is so large that the lubricating oil between facing bodies behaves as fluid and metal-to-metal contact between surface roughness asperities on facing bodies does not occur. When the oil film thickness becomes thinner or when the surface roughness height becomes larger, top of surface roughness asperities on facing bodies reaches very near to each other and there the oil or absorbed oil molecules on the surface of facing bodies behave no more as fluid. Partly metal-to-metal contact of surface roughness asperities occurs. Such lubrication state is called by the expression "mixed-lubrication". When the oil film thickness becomes more thinner or surface roughness height becomes larger, metal-tometal contact or contact via absorbed oil molecules dominate at most of the part in contact zone. Such state is called by the expression "boundary lubrication". Schematic representation of these three regimes of lubrication is shown in Figure 1.rication is shown in Figure 1.

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DC Magnetron Sputtering of Cr/Cu/Cr Metal Electrodes for AC Plasma Display panel (DC Magnetron Sputtering 법에 의한 AC Plasma Display panel의 Cr/Cu/Cr 금속전극 제조)

  • 남대현;이경우;박종완
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.8
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    • pp.704-710
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    • 2000
  • Metal electrode materials for plasma display panel should have low electrical resistivity in order to maintain stable gas discharge and have fast response time. They should also hae good film uniformity adhesion and thermal stability. In this study Cr/Cu/Cr metal electrode structure is formed by DC magnetron sputtering. Cr and Cu films were deposited on ITO coated glasses with various DC power density and main pressures as the major parameters. After metal electrodes were formed a heat treatment was followed at 55$0^{\circ}C$ for 20 min in a vacuum furnace. The intrinsic stress of the sputtered Cr film passed a tensile stress maximum decreased and then became compressive with further increasing DC power density. Also with increasing the main pressure stress turned from compression to tension. After heat the treatment the electrical resistivity of the sputtered Cu film of 2${\mu}{\textrm}{m}$ in thickness prepared at 1 motor with the applied power density of 3.70 W/cm$^2$was 2.68 $\mu$$\Omega$.cm With increasing the main pressure the DC magnetron sputtered Cu film became more open structure. The heat treatment decreased the surface roughness of the sputtered Cr/Cu/Cr metal electrodes.

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An investigation on the metal depression of aluminum (알루미늄 Metal Depression에 관한 연구)

  • Kim, Tae-Gun;Kim, Nam-Hoon;Kim, Sang-Yong;Lee, Woo-Sun;Chang, Eui-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.86-87
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    • 2005
  • Aluminum(Al) sputtering is best known method to form Al film for the Si wafer in the process of 180nm and above. In the Al metal line process, one of the frequently founded and well-known defect was metal depression. In this paper, several experiments were performed such as temperature, Ar gas flow rate, thickness change in other to reduce the metal depression and find the origination of metal depression. Through experiments, it is found that metal depression was significantly related to the temperature. And the Ar gas flow rate did not influence to the creation of depression. The off status ESC also showed stable metal film without depression by same mechanism of temperature decrease. Also, thickness is strongly influence to the metal depression.

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