• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.99-104
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• 2020

In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.

• 한국대기환경학회지
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• 제13권5호
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• pp.371-381
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• 1997

Precipitation sampls were collected in Chonju-city during October 1994 to September 1995 and were analysed for major ions (N $a^{+}$, $K^{+}$, $Ca^{2+}$, $Mg^{2+}$, C $l^{[-10]}$ , NO/$_3$, S $O_4$$^{2-}$) and trace metals (Al, Cd, Ni, Pb, Sr, Zn) in addition to pH, in order to understand the chemical characteristics of acid rain and to estimate the origin of the determined ions. Most rain showed a neutral or alkaline character, and only 35% had a pH lower than 5.6. S $O_4$$^{2-}$ and N $O_3$$^{[-10]}$ are identified as the primary contributors to precipitation acidity in this region. Neutralization of precipitation acidity occurs as a result of the dissolution of alkaline compounds containing $Ca^{2+}$, $Mg^{2+}$ and $K^{+}$. S $O_4$$^{2-}$ and N $O_3$$^{[-10]}$ precipitation concentrations exhibit a seasonal pattern in which higher concentrations are observed during spring months and lower concentrations during summer months. However, the seasonal behavior of $H^{+}$ concentrations differs from this pattern, in that the highest concentrations occur during autumn months, owing to the different influence of neutralization processes. In all rain, S $O_4$$^{2-}$ concentration exceeded NO/$_3$$^{[-10]}$ concentration. The contribution of maritime sources to the total S $O_4$$^{2-}$ concentration was very low or negligible. For rain strongly affacted by yellow sand, $Ca^{2+}$, $Mg^{2+}$ and $K^{+}$ ions show a sharp increase in concentration, reflecting the increased amount of dust and soil suspended in atmosphere. At the same time, S $O_4$$^{2-}$ and N $O_3$$^{[-10]}$ concentrations are at their highest levels while $H^{+}$ values are not comparably elevated, presumably beacause much of the acidity has been neutralized by alkaline substances. The seasonal variance of trace metal concentrations in rainwater is similar to that of major cations. The annual wet flux of acidic pollutants and trace metals wat calculated to be as follows: N $O_3$$^{[-10]}$ ; 2.32 g/$m^2$, S $O_4$$^{2-}$, 5.34 g/$m^2$, Al; 6.30 mg/$m^2$, Cd; 0.62 mg/$m^2$, Ni; 4.08 mg/$m^2$, Pb: 9.76 mg/$m^2$, Sr; 5.94 mg/$m^2$, Zn; 111 mg/$m^2$./$m^2$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.293-293
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• 2014

Over last decade InGaN alloy structures have become the one of the most promising materials among the numerous compound semiconductors for high efficiency light sources because of their direct band-gap and a wide spectral region (ultraviolet to infrared). The primary cause for the high quantum efficiency of the InGaN alloy in spite of high threading dislocation density caused by lattice misfit between GaN and sapphire substrate and severe built-in electric field of a few MV/cm due to the spontaneous and piezoelectric polarizations is generally known as the strong exciton localization trapped by lattice-parameter-scale In-N clusters in the random InGaN alloy. Nonetheless, violet-emitting (390 nm) conventional low-In-content InGaN/GaN multi-quantum wells (MQWs) show the degradation in internal quantum efficiency compared to blue-emitting (450 nm) MQWs owing higher In-content due to the less localization of carrier and the smaller band offset. We expected that an improvement of internal quantum efficiency in the violet region can be achieved by replacing the conventional low-In-content InGaN/GaN MQWs with ultra-thin, high-In-content (UTHI) InGaN/GaN MQWs because of better localization of carriers and smaller quantum-confined Stark effect (QCSE). We successfully obtain the UTHI InGaN/GaN MQWs grown via employing the GI technique by using the metal-organic chemical vapor deposition. In this work, 1 the optical and structural properties of the violet-light-emitting UTHI InGaN/GaN MQWs grown by employing the GI technique in comparison with conventional low-In-content InGaN/GaN MQWs were investigated. Stronger localization of carriers and smaller QCSE were observed in UTHI MQWs as a result of enlarged potential fluctuation and thinner QW thickness compared to those in conventional low-In-content MQWs. We hope that these strong carrier localization and reduced QCSE can turn the UTHI InGaN/GaN MQWs into an attractive candidate for high efficient violet emitter. Detailed structural and optical characteristics of UTHI InGaN/GaN MQWs compared to the conventional InGaN/GaN MQWs will be given.

• 한국표면공학회지
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• 제29권6호
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• 전기화학회지
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• 제12권2호
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• pp.189-195
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• 2009

고순도의 $\beta-Ga_{2}O_{3}$ 나노로드(nanorods)가 니켈산화물 나노입자를 촉매로 사용하고 갈륨금속분말을 원료물질로 이용하여 화학기상증착법으로 합성되었다. 전계방출형 주사전자현미경을 이용하여 $\beta-Ga_{2}O_{3}$ 나노로드를 관찰한 결과, 평균직경은 약 160 nm 그리고 평균길이는 $4{\mu}m$였으며 vaporsolid(VS) 성장기구를 통하여 성장되었음을 알 수 있었다. X-선 회절시험과 고분해능 투과전자 현미경을 이용한 결정구조 분석 결과, 합성된 나노로드의 내부는 단사정계 결정구조를 가지는 단결정의 $\beta-Ga_{2}O_{3}$로 이루어져 있고 외벽은 비정질 갈륨옥사이드로 이루어진 코어-셀 구조로 구성되어 있는 것을 확인하였다. 합성된 $\beta-Ga_{2}O_{3}$ 나노로드를 음극 활물질로 사용하여 전극을 제조하고 전기화학적 특성을 분석한 결과, 리튬/$\beta-Ga_{2}O_{3}$ 나노로드 전지는 첫 방전 시 867 mAh/g-$\beta-Ga_{2}O_{3}$의 높은 용량을 나타내었으나 초기 비가역 용량으로 인해 62%의 낮은 충 방전 효율을 나타내었다. 그러나 5 사이클 이후 높은 충 방전 효율을 보이며 30 사이클까지 안정된 사이클 특성을 나타내었다.

• Progress in Superconductivity
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• 제8권1호
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• pp.65-70
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• 2006

We fabricated $YBa_2Cu_33O_{7-x}$(YBCO) films on(00l) $LaAlO_3$ substrates prepared by metal organic deposition(MOD) method using trifluoroacetate(TFA) solution and evaluated the effects of the humidity on the microstructure, phase purity, and critical properties. The films calcined at $430^{\circ}C$ were fired at $775^{\circ}C$ at 0%, 4.2%, 12.1%, and 20.0% humidified As gas mixed with 0.1% $O_2$. We observed that the amount of $BaF_2$ phase was effectively reduced and that a sharp and strong biaxial texture formed under a humidified atmosphere, leading to increased critical properties. For the films fired at 0% humidity, the $T_c\;and\;I_c$ were undetectably small. When the humidity was increased to 4.2%, the corresponding $T_c$(onset) and $I_c$ were increased to 90.5 K and 8 A/cm-width, respectively. For the films at the humidity range of 12.1-20.0%, the $I_c$ was found to be 35 A/cm-width. According to the results of the XRD, pole-figure, and SEM, these improved critical properties are probably attributed to the formation of a purer YBCO phase, larger grain size, and stronger c-axis orientation.

• 방사성폐기물학회지
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• 제13권4호
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• pp.263-269
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• 2015

산화물 사용후핵연료에 대한 전해환원의 금속전환체를 양극으로 한 전해정련공정에는 LiCl-KCl 공융염에 우라늄 원소뿐 아니라 초우란 원소 및 희토류 원소들이 용해되므로 우라늄을 선택적으로 회수하기 위해서는 우라늄과 다른 원소들이 음극에 전착되는 거동에 대한 연구가 필요하다. LiCl-KCl 공융염 내 희토류 원소의 농도에 따른 음극에서의 전착거동을 고찰하기 위해 U 및 Ce를 기준으로 한 U, Ce, Y 그리고 Nd 원소들의 분리계수에 대한 연구를 수행하였다. Ce 금속을 희생 양극으로 이용하여 정전류 정련반응을 통해 용융염 상과 전착물 상의 U, Ce, Y 그리고 Nd 원소의 농도를 분석하여 이로부터 분리계수를 얻었으며 $UCl_3$ 농도와 $CeCl_3/UCl_3$ 농도비에 따른 분리계수로부터 우라늄을 선택적으로 회수할 수 있는 조건들을 고찰하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.150-151
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• 2011

양자점 Laser Diode(LD)는 낮은 문턱전류, 높은 미분 이득을 갖으며 또한 온도변화에도 안정적이기 때문에 광통신분야에서 광원으로 양자점 LD를 사용하기 위한 연구가 계속되고 있다. 양자점은 fill factor가 낮기 때문에 양자점의 밀도를 높이거나 양자점을 적층 성장하여 fill factor를 높인다. 그러나 양자점을 적층 성장하면 각 층간의 응력, 수직적 결합, 전기적인 결합이 생기며 이는 양자점의 전기적, 광학적 특성에 영향을 미친다. 본 연구에서는 metal organic chemical vapor deposition (MOCVD)을 이용하여 InP기판 위에 자발성장 법으로 InAs 양자점을 다주기 성장하였으며 photoluminescence (PL)을 이용하여 광학적 특성을 분석하였다. precursor는 trimethylindium (TMI), trimethylgalium (TMGa), $PH_3$, $AsH_3$를 사용하였으며 carrier gas는 $H_2$를 사용하였다. InAs 양자점은 1100 nm의 파장을 갖는 InGaAsP barrier 위에 성장하였고, InAs와 InGaAsP의 성장온도는 $520^{\circ}C$이며 InAs 양자점 성장시 V/III 비는 3.66으로 일정하게 유지하였다. 그림 1은 양자점 성장시간을 0.11분으로 고정하여 3주기(A), 5주기(B), 8주기(C) 성장한 구조이며 그림 2는 양자점 성장시간을 3주기마다 0.01분씩 줄여가며 3주기는 0.11분${\times}$3(D), 6주기는 0.11분${\times}$3+0.10분${\times}$3(E), 9주기는 0.11분${\times}$3+0.10분${\times}$3+0.09분${\times}$3(F) 으로 성장한 성장구조이다. 각 성장한 시료는 PL을 이용하여 파장과 반치폭을 측정하였다. 그림 3은 양자점 성장시간을 고정한 시료 A, B, C의 PL파장과 PL반치폭 데이터이다. PL파장은 A, B, C 시료 각각 1504 nm, 1571 nm, 1702 nm이며 반치폭은 각각 140 meV, 140 meV, 150 meV이다. PL파장과 반치폭은 각각 3주기에서 6주기로 증가할 때 67 nm, 0 meV 6주기에서 9주기로 증가할 때는 131 nm, 10 meV 증가하였다. 다음 그림4는 양자점 성장시간을 조절하여 성장한 양자점 시료 D, E, F의 PL파장과 PL반치폭 데이터이다. PL파장은 D, E, F 시료 각각 1509 nm, 1556 nm, 1535 nm이며 반치폭은 각각 137 meV, 138 meV, 144 meV이다. PL파장과 반치폭은 각각 3주기에서 6주기로 증가할 때 47 nm, 1 meV 증가하였고, 6주기에서 9주기로 증가할 때는 21 nm 감소, 6 meV 증가하였다. 양자점 성장시간을 고정하여 다주기를 성장하였고 또 3주기마다 양자점 성장시간을 달리하여 다주기를 성장하였으며 PL을 이용해 광학적 특성을 연구하였다. 성장된 양자점의 PL 파장과 PL 반치폭 변화를 통해 적층구조에서 성장 주기가 늘어날수록 양자점의 크기가 증가하는 것을 확인하였고 또한 적층성장을 할 때 양자점 성장시간을 줄임으로써 양자점의 크기 변화를 제어 할 수 있었다.

• 공업화학
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• 제23권3호
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• pp.293-296
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• 2012

항균 활성도를 조사하기 위해 이산화티탄미립자 표면에 나노메탈(Au, Ag)을 균일하게 도핑한 나노복합체($Ag-TiO_2,\;Au-TiO_2,\;Ag-TiO_2$@$TiO_x$)를 초음파환원법과 졸-겔 법으로 제조하였다. 이렇게 제조된 나노메탈-이산화티탄 복합체의 항균 활성도는 고체배지 표면에 나노복합체와 함께 E. coli를 도말하여 $37^{\circ}C$에서 배양한 후 생존된 콜로니 개수의 측정을 통해서 이루어졌다. 나노복합체의 초기 항균 효율은 나노메탈이 도핑된 이산화티탄미립자($Ag-TiO_2,\;Au-TiO_2,\;Ag-TiO_2$@$TiO_x$)) 복합체가 도핑하지 않은 이산화티탄미립자($TiO_2$)에 비해 높은 항균 효율을 나타내주었다. 이후, 나노복합체를 $4^{\circ}C$에서 보관 후 장기보관에 따른 항균특성을 비교해본 결과, 나노메탈만 도핑된 복합체($Ag-TiO_2,\;Au-TiO_2$)보다는 $Ag-TiO_2,$의 표면을 다시 산화티탄막으로 코팅한 복합체($Ag-TiO_2$@$TiO_x$)의 항균특성이 오랫동안 유지되는 것을 알수 있었다. 이는 산화티탄막으로 다시 코팅한 $Ag-TiO_2$@$TiO_x$의 경우에 Ag 나노메탈의 산화방지 및 나노복합체의 콜로이드 안정성 향상이 이루어졌기 때문으로 사료된다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.142.2-142.2
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• 2018

One-dimensional metal oxide nanostructures have attracted considerable research activities owing to their strong application potential as components for nanosize electronic or optoelectronic devices utilizing superior optical and electrical properties. In which, semiconducting $SnO_2$ material with wide-bandgap Eg = 3.6 eV at room temperature, is one of the attractive candidates for optoelectronic devices operating at room temperature [1, 2], gas sensor [3, 4], and transparent conducting electrodes [5]. The synthesis and gas sensing properties of semiconducting $SnO_2$ nanomaterials have become one of important research issues since the first synthesis of SnO2 nanowires. In this study, $SnO_2$ nanowire networks were synthesized on a basis of a two-step process. In step 1, Sn spheres (30-800 nm in diameter) embedded in $SiO_2$ on a Si substrate was synthesized by a chemical vapor deposition method at $700^{\circ}C$. In step 2, using the source of these Sn spheres, $SnO_2$ nanowire (20-40 nm in diameter; $1-10{\mu}m$ in length) networks on a spherical Sn surface were synthesized by a thermal oxidation method at $800^{\circ}C$. The Au layers were pre-deposited on the surface of Sn spherical and subsequently oxidized Sn surface of Sn spherical formed SnO2 nanowires networks. Field emission scanning electron microscopy and high-resolution transmission electron microscopy images indicated that $SnO_2$ nanowires are single crystalline. In addition, the $SnO_2$ nanowire is also a tetragonal rutile, with the preferred growth directions along [100] and a lattice spacing of 0.237 nm. Subsequently, the $NO_2$ sensing properties of the $SnO_2$ network nanowires sensor at an operating temperature of $50-250^{\circ}C$ were examined, and showed a reversible response to $NO_2$ at various $NO_2$ concentrations. Finally, details of the growth mechanism and formation of Sn spheres and $SnO_2$ nanowire networks are also discussed.