• 한국초전도학회:학술대회논문집
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• v.14
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• pp.19-19
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• 2004

• 한국초전도학회:학술대회논문집
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• v.14
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• pp.44-44
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• 2004

• ETRI Journal
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• v.16 no.2
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• pp.1-13
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• 1994

We have identified two new features related to the coherent transport in the mesoscopic loop structure of aluminum wire, including the autocorrelation of the conductance fluctuations beyond $B_c$ and fine structure in the low-field magnetoresistance curve in the superconducting transition regime, which, to the best of our knowledge, have not been reported in the literature. Since the electrons in Al have a phase coherence length larger than $1\;{\mu}m$ at or below T = 3K, which is comparable to the dimensions of the structure, the wave nature of the electronic transport has been clearly observed: the universal conductance fluctuations, the Aharonov-Bohm oscillations, and the Altshuler-Aronov-Spivak oscillations. Due to the transition of Al to a superconducting state at T = 1.3 K, the coherent phenomena of Cooper pairs, i.e., the Little-Parks oscillations, have also been observed.

• ETRI Journal
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• v.18 no.4
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• pp.301-313
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• 1997

We have found that in the ballistic electron transport in a ring structure, the junction-backscattering contribution is critical for all the major features of the Aharonov-Bohm-type interference patterns. In particular, by considering the backscattering effect, we present new and clear interpretation about the physical origin of the secondary minima in the electrostatic Aharonov-Bohm effect and that of the h/2e oscillations when both the electric and magnetic potentials are present. We have devised a convenient scheme of expanding the conductance by the junction backscattering amplitude, which enables us to determine most important electron paths among infinitely many paths and to gain insight about their contributions to the interference patterns. Based on the scheme, we have identified various interesting interference phenomena in the ballistic ring structure and found that the backscattering effect plays a critical role in all of them.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.1005-1009
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• 2006

High quality three-dimensional (3D) heterostructures were constructed by selective area (SA) molecular beam epitaxy (MBE) using a specially patterned GaAs (001) substrate to improve the efficiency of tarrier transport. MBE growth parameters such as substrate temperature, V/III ratio, growth ratio, group V sources (As2, As4) were varied to calibrate the selective area growth conditions and the 3D GaAs-AlGaAs heterostructures were fabricated into the ridge type and the V-groove type. Scanning micro-photoluminescence $({\mu}-PL)$ measurements and the following analysis revealed that the gradually (adiabatically) coupled 1D-2DEG (electron gas) field effect transistor (FET) system was successfully realized. These 3D-heterostructures are expected to be useful for the realization of high-performance mesoscopic electronic devices and circuits since it makes it possible to form direct ohmic contact onto the (quasi) 1D electron channel.