• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.91-105
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• 2016

Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of ${\Phi}_{M1}/{\Phi}_{M2}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.49 no.4
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• pp.1-9
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• 2012

LCD(Liquid Crystal Display) commonly used as an output device has a drawback of slow response time compared with CRT display. This drawback causes motion blur especially when an abrupt intensity change occurs in an image sequence as time goes on. To overcome the problem of slow response time overdriving technique has been used in TCON of LCD. In this technique, the previous frame data has to be compressed and stored in an external memory. Considering both chip size of TCON and computational complexity, AM-BTC has been applied to the 8bit HD display driver. However, the conventional method is not suitable for 10 bit Full HD because 10 bit Full HD data is much larger than that of 8 bit HD data. Being applied to 10 bit Full HD display driver, the conventional method increase cost by enlarging the external memory size of TCON or deteriorates image quality. In this paper, we propose dual BTC image coding technique for Full HD display driver that is an adaptive coding scheme according to morphological information of each sample block. Through experiments, it is verified that the proposed Dual BTC method performs better than the conventional method not only quantitatively but also qualitatively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.12
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• pp.76-82
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• 2019

The development of Internet technology and the deployment of smart devices provide a convenient environment for people, and this is becoming common with the technology called the Internet of Things (IoT). But the development of, and demand for, IoT technology is causing various problems, such as personal information leaks due to the attacks of hackers who exploit it. A number of devices are connected to a network, and network attacks that have been exploited in the existing PC environment are occurring in the IoT environment. When it comes to IP cameras, security incidents (such as distributed denial of service [DDoS] attacks, hacking someone's personal information, and monitoring without consent) are occurring. However, it is difficult to install and implement existing security solutions because memory space and power are limited owing to the characteristics of small devices in the IoT environment. Therefore, this paper proposes a security protocol that can look at and prevent IoT security threats. A security assessment verified that the proposed protocol is able to respond to various security threats that could arise in a network. Therefore, it is expected that efficient operation of this protocol will be possible if it is applied to the IoT environment.

• Korean Journal of Materials Research
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• v.1 no.1
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• pp.46-53
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• 1991

The stress of PSG (Phosphosilicate glass), USG (Undoped-silicate grass) and SiN films, which are mainly used as passivation layers in semiconductor memory devices, deposited by CVD methods has been studied as a function of film thickness and holding time in air. The stress of the PSG film or the USG film is increased in tensile state with increasing film thickness. On the other hand the stress level of the SiN film in compressive stress does not change as film thickness changes. The stress of PSG film shows the drastic change from the tensile stress to the compressive stress after the film is left 2 days in air. FTIR spectra indicated that the stress variation was due to the penetration of water molecule. It looks possible to recover the stress of about $2.5{\times}{10^9}dyne/cm^2$ by annealing treatment at $300^{\circ}C$ for 20min. The total stress of multi-layered films having the PSG film is determined mainly by the stress variation of PSG layer with holding time. The total stress of multi-layered film appears to have a functional relationship with the stress in the thickness of each film. The resistance against stress-migration of sputtered Al line increases with increasing the tensile stress for the PSG film or the USG film.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.2
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• pp.306-316
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• 2016

In this paper, an NMOS-diode eFuse OTP (One-Time Programmable) memory cell is proposed using a parasitic junction diode formed between a PW (P-Well), a body of an isolated NMOS (N-channel MOSFET) transistor with the small channel width, and an n+ diffusion, a source node, in a DNW (Deep N-Well) instead of an NMOS transistor with the big channel width as a program select device. Blowing of the proposed cell is done through the parasitic junction formed in the NMOS transistor in the program mode. Sensing failures of '0' data are removed because of removed contact voltage drop of a diode since a NMOS transistor is used instead of the junction diode in the read mode. In addition, a problem of being blown for a non-blown eFuse from a read current through the corresponding eFuse OTP cell is solved by limiting the read current to less than $100{\mu}A$ since a voltage is transferred to BL by using an NMOS transistor with the small channel width in the read mode.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.8
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• pp.1456-1464
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• 2007

The research of skin-tone detection has been conducting continuously to enlarge the importance in security, surveillance and administration of the information and 'Password Control System' for using face and skin recognition in airports, harbors and general companies. As well as tile rapid diffusion of the application range in image communications and an electron transaction using wide range of communication network, the importance of the accurate detection of skin color has been augmenting recently. In this paper, it will set up the boundaries of skin colors using the information of Cb and Cr in YCbCr color model of human skin color which is from hundreds compiled portrait images for each race, and suggest a efficient yet simple structure about the skin detection which has been followed by whether the comprehension of the boundaries of skin or not with adaptive skin-range set. With the possibility of the 1D Processes which does not use any memory, it is able to be applied to relatively small-sized hardware and system such as mobile apparatuses. To add the selective mode, it is not only available the improvement of tie skin detection, but also showing the correspondent results about previous face recognition technologies using complicated algorithm.

• Journal of Advanced Navigation Technology
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• v.25 no.4
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• pp.305-312
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• 2021

Even though various types of sensors are being used for security applications, radar sensors are being suggested as an alternative due to the privacy issues. Among those radar sensors, PD radar has high-complexity receiver, but, FMCW radar requires fewer resources. However, FMCW has disadvantage from the use of 2D-FFT which increases the complexity, and it is difficult to distinguish people from objects those are stationary. In this paper, we present the design and the implementation results of the radar signal processor (RSP) that can distinguish between people and object by respiration measurement using phase estimation without 2D-FFT. The proposed RSP is designed with Verilog-HDL and is implemented on FPGA device. It was confirmed that the proposed RSP includes 6,425 LUT, 4,243 register, and 12,288 memory bits with 92.1% accuracy for target's breathing status.

• Journal of Intelligence and Information Systems
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• v.29 no.1
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• pp.107-119
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• 2023

The technology that recognizes a soldier's motion and movement status has recently attracted large attention as a combination of wearable technology and artificial intelligence, which is expected to upend the paradigm of troop management. The accuracy of state determination should be maintained at a high-end level to make sure of the expected vital functions both in a training situation; an evaluation and solution provision for each individual's motion, and in a combat situation; overall enhancement in managing troops. However, when input data is given as a timer series or sequence, existing feedforward networks would show overt limitations in maximizing classification performance. Since human behavior data (3-axis accelerations and 3-axis angular velocities) handled for military motion recognition requires the process of analyzing its time-dependent characteristics, this study proposes a high-performance data-driven classifier which utilizes the long-short term memory to identify the order dependence of acquired data, learning to classify eight representative military operations (Sitting, Standing, Walking, Running, Ascending, Descending, Low Crawl, and High Crawl). Since the accuracy is highly dependent on a network's learning conditions and variables, manual adjustment may neither be cost-effective nor guarantee optimal results during learning. Therefore, in this study, we optimized hyperparameters using Bayesian optimization for maximized generalization performance. As a result, the final architecture could reduce the error rate by 62.56% compared to the existing network with a similar number of learnable parameters, with the final accuracy of 98.39% for various military operations.

• KIPS Transactions on Computer and Communication Systems
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• v.12 no.9
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• pp.283-290
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• 2023

With the recent steady development of IoT technology, it is widely used in medical systems and smart TV watches. 66% of software development is developed through language C, which is vulnerable to memory attacks, and acts as a threat to IoT devices using language C. A stack-smashing overflow attack inserts a value larger than the user-defined buffer size, overwriting the area where the return address is stored, preventing the program from operating normally. IoT devices with low memory capacity are vulnerable to stack smashing overflow attacks. In addition, if the existing vaccine program is applied as it is, the IoT device will not operate normally. In order to defend against stack smashing overflow attacks on IoT devices, we used canaries among several detection methods to set conditions with random values, checksum, and DSLR (random storage locations), respectively. Two canaries were placed within the buffer, one in front of the return address, which is the end of the buffer, and the other was stored in a random location in-buffer. This makes it difficult for an attacker to guess the location of a canary stored in a fixed location by storing the canary in a random location because it is easy for an attacker to predict its location. After executing the detection program, after a stack smashing overflow attack occurs, if each condition is satisfied, the program is terminated. The set conditions were combined to create a number of eight cases and tested. Through this, it was found that it is more efficient to use a detection method using DSLR than a detection method using multiple conditions for IoT devices.