• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2004년도 ISMP Pb-free solders and the PCB technologies related to Pb-free solders
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• pp.211-219
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• 2004

A new alloy definition will be presented concerning increasing demands for the board level reliability of miniaturized interconnections. The damage mechanism for LFBGA components on different board finishes is not quite understood. Further demands from mobile phones are the drop test, characterizing interface performance of different package constructions in relation to decreased pad constructions and therefore interfaces. The paper discusses the characterization of interfaces based on SnPb, SnPbXYZ, SnAgCu and SnAgCuInNd ball materials and SnAgCuInNd as solder paste, the stability after accelerated tests and the description of modified interfaces stric시y related to the assembly conditions, dissolution behavior of finishes on board side and the influence of intermetallic formation. The type of intermetallic as well as the quantity of intermetallics are observed, primaliry the hardness, E modules describing the ability of strain/stress compensation. First results of board level reliability are presented after TCT-40/+150. Improvement steps from the ball formulation will be discussed in conjunction to the implementation of lead free materials. In order to optimize ball materials for area array devices accelareted aging conditions like TCTs were used to analyze the board level reliability of different ball materials for BGA, LFBGA, CSP, Flip Chip. The paper outlines lead-free ball analysis in comparison to conventional solder balls for BGA and chip size packages. The important points of interest are the description of processability related to existing ball attach procedures, requirements of interconnection properties and the knowledge gained the board level reliability. Both are the primary acceptance criteria for implementation. Knowledge about melting characteristic, surface tension depend on temperature and organic vehicles, wetting behavior, electrical conductivity, thermal conductivity, specific heat, mechanical strength, creep and relaxation properties, interactions to preferred finishes (minor impurities), intermetallic growth, content of IMC, brittleness depend on solved elements/IMC, fatigue resistance, damage mechanism, affinity against oxygen, reduction potential, decontamination efforts, endo-/exothermic reactions, diffusion properties related to finishes or bare materials, isothermal fatigue, thermo-cyclic fatigue, corrosion properties, lifetime prediction based on board level results, compatibility with rework/repair solders, rework temperatures of modified solders (Impurities, change in the melting point or range), compatibility to components and laminates.

• 반도체디스플레이기술학회지
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• 제15권4호
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• pp.10-15
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• 2016

In this paper, novel ball grid array (BGA) interconnection process using solderable anisotropic conductive adhesives (SACAs) with low-melting-point alloy (LMPA) fillers have been developed to enhance the processability in the conventional capillary underfill technique and to overcome the limitations in the no-flow underfill technique. To confirm the feasibility of the proposed technique, BGA interconnection test was performed using two types of SACA with different LMPA concentration (0 and 4 vol%). After the interconnection process, the interconnection characteristics such as morphology of conduction path and electrical properties of BGA assemblies were inspected and compared. The results indicated that BGA assemblies using SACA without LMPA fillers showed weak conduction path formation such as solder bump loss or short circuit formation because of the expansion of air bubbles within the interconnection area due to the relatively high reflow peak temperature. Meanwhile, assemblies using SACA with 4 vol% LMPAs showed stable metallurgical interconnection formation and electrical resistance due to the favorable selective wetting behavior of molten LMPAs for the solder bump and Cu metallization.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.450-455
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• 2002

Cu-cored Sn-Ag solder balls were fabricated by coating pure Sn and Ag on Cu balls. The melting behavior and the solderability of the BGA joint with the Ni/Au coated Cu pad were investigated and were compared with those of the commercial Sn-Ag and Sn-Ag-Cu balls. DSC analyses clarified the melting of Cu-cored solders to start at a rather low temperature, the eutectic temperature of Sn-Ag-Cu. It was ascribed to the diffusion of Cu and Ag into Sn plating during the heating process. After reflow soldering the microstructures of the solder and of the interfacial layer between the solder and the Cu pad were analyzed with SEM and EPMA. By EDX analysis, formation of a eutectic microstructure composing of $\beta$-Sn, Ag$_3$Sn, ad Cu$_{6}$Sn$_{5}$ phases was confirmed in the solder, and the η'-(Au, Co, Cu, Ni)$_{6}$Sn$_{5}$ reaction layer was found to form at the interface between the solder and the Cu pad. By conducting shear tests, it was found that the BGA joint using Cu-cored solder ball could prevent the degradation of joint strength during aging at 423K because of the slower growth me of η'-(Au, Co, Cu, Ni)$_{6}$Sn$_{5}$ reaction layer formed at the solder, pad interface. Furthermore, Cu-cored multi-component Sn-Ag-Bi balls were fabricated by sequentially coating the binary Sn-Ag and Sn-Bi solders on Cu balls. The reflow property of these solder balls was investigated. Melting of these solder balls was clarified to start at the almost same temperature as that of Sn-2Ag-0.75Cu-3Bi solder. A microstructure composing of (Sn), Ag$_3$Sn, Bi and Cu$_{6}$Sn$_{5}$ phases was found to form in the solder ball, and a reaction layer containing primarily η'-(Au, Co, Cu, Ni)$_{6}$Sn$_{5}$ was found at the interface with Ni/Au coated Cu pad after reflow soldering. By conducting shear test, it was found that the BGA joints using this Cu-core solder balls hardly degraded their joint shear strength during aging at 423K due to the slower growth rate of the η'-(Au, Cu, Ni)$_{6}$Sn$_{5}$ reaction layer at the solder/pad interface.he solder/pad interface.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2009년도 추계학술발표대회 논문집
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• pp.273-278
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• 2009

The experimental study is performed to investigate the optimum design of the system dissipating properly heat from the in-situ solar panel installed on site. For this purpose, six 12-Watts panels, which are set at the different conditions of the solar panels contained phase change material, changing the array of the aluminum fin and honeycomb at the back of the panel, are tested. PCM, which has $44^{\circ}C$ melting point, is chosen in this study. In order to enhance the thermal heat from the absorbed heat in PCM, finned aluminum plate is placed. Furthermore, Aluminum honeycomb is imbedded in the back container to find if it would improve the thermal conductivity of PCM. As a result, the solar panel, which is combined with honeycomb and outward fins with PCM instead of placing the fine inward, is showing the best performance in terms of controling panel temperature and efficiency.

• 한국태양에너지학회 논문집
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• 제30권2호
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• pp.10-15
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• 2010

The experimental study was conducted to optimize the system dissipating properly heat from the in-situ solar panel installed on the roof. For this purpose, six 12-Watt panels, which were consisted of the different design conditions such as containing phase change material(PCM), changing the array of the aluminum fin and honeycomb at the back of the panel, were tested. PCM, which had $44^{\circ}C$ melting point, was chosen in this study. In order to enhance absorbing and expelling heatin PCM, profiled aluminum fin was placed either inward oroutward from the panel. Furthermore, Aluminum honeycomb is imbedded in the back container to find if it would improve the thermal conductivity of PCM. During the experiment, there were ranged to $26^{\circ}C\sim32^{\circ}C$ for outdoor temperature and $700W/m^2\sim1000W/m^2$ for irradiance. As a result, the solar panel, combined with honeycomb and outward fins with PCM instead of placing the fins inward, is showing the best performance in terms of controling panel temperature and its efficiency.

• 한국의학물리학회지:의학물리
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• 제29권3호
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• pp.92-100
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• 2018

The manufacturer of a linear accelerator (LINAC) has reported that the target melting phenomenon could be caused by a non-recommended output setting and the excessive use of monitor unit (MU) with intensity-modulated radiation therapy (IMRT). Due to these reasons, we observed an unexpected beam interruption during the treatment of a patient in our institution. The target status was inspected and a replacement of the target was determined. After the target replacement, the beam profile was adjusted to the machine commissioning beam data, and the absolute doses-to-water for 6 MV and 10 MV photon beams were calibrated according to American Association of Physicists in Medicine (AAPM) Task Group (TG)-51 protocol. To verify the beam data after target replacement, the beam flatness, symmetry, output factor, and percent depth dose (PDD) were measured and compared with the commissioning data. The difference between the referenced and measured data for flatness and symmetry exhibited a coincidence within 0.3% for both 6 MV and 10 MV, and the difference of the PDD at 10 cm depth ($PDD_{10}$) was also within 0.3% for both photon energies. Also, patient-specific quality assurances (QAs) were performed with gamma analysis using a 2-D diode and ion chamber array detector for eight patients. The average gamma passing rates for all patients for the relative dose distribution was $99.1%{\pm}1.0%$, and those for absolute dose distribution was $97.2%{\pm}2.7%$, which means the gamma analysis results were all clinically acceptable. In this study, we recommend that the beam characteristics, such as beam profile, depth dose, and output factors, should be examined. Further, patient-specific QAs should be performed to verify the changes in the overall beam delivery system when a target replacement is inevitable; although it is more important to check the beam output in a daily routine.

• 센서학회지
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• 제8권3호
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• pp.239-246
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• 1999

MOCVD로 성장된 p-i-n 구조의 InSb 웨이퍼를 이용하여 $3{\sim}5\;{\mu}m$ 영역의 적외선을 감지할 수 는 고감도 광기전력 형태의 적외선 광다이오드를 제조하였다. InSb는 녹는점과 표면원자들의 증발온도가 낮기 때문에 광다이오드의 접합계면과 표면의 절연보호막으로 $SiO_2$ 박막을 원격 PECVD를 이용하여 성장시켰다. 광다이오드의 저항성 접촉을 위해 In을 증착하였고 77K의 암상태에서 전류-전압 특성을 조사하였다. 영전위 저항과 수광면적의 적($R_0A$)이 $1.56{\times}10^6\;{\Omega}{\cdot}cm^2$의 높은 값을 가졌는데 이는 BLIP 조건을 만족하는 높은 값이었다. InSb 광다이오드에 적외선을 입사 했을때 $10^{11}\;cm{\cdot}Hz^{1/2}{\cdot}W^{-1}$의 매우 높은 정규화된 검지도를 나타내었다. 높은 양자효율과 검지도로 인해 제조된 InSb 적외선 단위 셀을 적외선 array에 그 적용이 가능할 것으로 보인다.

• 마이크로전자및패키징학회지
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• 제19권3호
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• pp.31-36
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• 2012

본 연구에서는 고 융점을 지니는 Sn-3.5Ag, Sn-0.7Cu 솔더의 복합 진동 신뢰성을 고찰하였다. 테스트 샘플은 ENIG (Electroless Nikel Immersion Gold) 표면처리 된 BGA (Ball Grid Array)칩에 Sn-3.5Ag, Sn-0.7Cu 솔더볼을 접합 후, 솔더볼이 장착된 BGA부품을 OSP (Organic Solderability Preservative) 표면처리 된 PCB에 리플로우 공정을 통하여 실장 하였다. 복합 진동 신뢰성 시험 중에 부품의 저항 변화를 측정하기 위하여 BGA칩과 PCB는 데이지 체인을 구성하여 제작하였다. 이를 통한 저항의 변화와 시험 전후의 부품에 대한 전단 강도 시험을 통하여 두 종류의 솔더에 대한 복합환경에서의 신뢰성을 비교, 평가하였다. 120시간 복합 진동 동안 전기저항 증가와 접합강도 저하를 고려할 때 Sn-0.7Cu 솔더가 복합 환경에서 높은 안정성을 나타내었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2001년도 추계학술발표회 초록집
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• pp.67-67
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• 2001

The structure zone model has been used to provide an overview of the relationship between the microstructure of the films deposited by PVD and the most prominent deposition condition.s. B.AMovchan and AV.Demchishin have proposed it firstls such model. They concluded that the general features of the resulting structures could be correlated into three zones depending on $T/T_m$. Here T m is the melting point of the coating material and T is the substrate temperature in kelvines. Zone 1 ($T/Tm_) is dominated by tapered macrograins with domed tops, zone 2 ($O.3) by columnar grains with denser boundaries and zone 3 ($T/T_m>O.5$) by equiaxed grains formed by recrystallization. J.AThomton has extended this model to include the effect of the sputtering gas pressure and found a fourth zone termed zone T(transition zone) consisting of a dense array of poorly defined fibrous grains. R.Messier found that the zone I-T boundary (fourth zone of Thorton) varies in a fashion similar to the film bias potential as a function of gas pressure. However, there has not nearly enough model for explaining the change in morphology with crystal orientation of the films. The structure zone model only provide an information about the morphology of the deposited film. In general, the nucleation and growth mechanism for granular and fine structure of the deposited films are very complex in an PVD technique because the morphology and orientation depend not only on the substrate temperature but also on the energy of deposition of the atoms or ions, the kinetic mechanism between metal atoms and argon or nitrogen gas, and even on the presence of impurities. In order to clarify these relationship, AI and Mg thin films were prepared on SPCC steel substrates by PVD techniques. The influence of gas pressures and bias voltages on their crystal orientation and morphology of the prepared films were investigated by SEM and XRD, respectively. And the effect of crystal orientation and morphology of the prepared films on corrosion resistance was estimated by measuring polarization curves in 3% NaCI solution.

• 암석학회지
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• 제21권2호
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• pp.235-247
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• 2012

우리나라 백령도, 제주도, 보은, 아산, 평택, 간성일대에는 맨틀 페리도타이트들이 알칼리 현무암류에 포획되어 온 형태로 분포하고 있다. K-Ar 전암연대측정 자료에 의하면 이들 화산암류는 약 0.1-18.9Ma에 분출하였다. 페리도타이트의 광물조합은 감람석-사방휘석-단사휘석-첨정석이며, 함수광물이나 석류석이 보고된 바는 없다. 암석의 종류는 레어조라이트에서 하즈버가이트에 걸쳐있다. 감람석은 $Fo_{88.4-92.0}$이고, 단사휘석은 투휘석, 사방휘석은 엔스터타이트가 풍부하며, 첨정석은 Cr이 풍부하다(Cr# = 7.8-53.6). 주성분 원소함량에 의하면 이들 페리도타이트는 부화된 중앙해령현무암 근원 맨틀로부터 대략 26%까지의 부분용융을 겪은 후에 남은 잔류물로 추정된다. 그러나 맨틀에서의 이차적인 변성교대작용의 흔적이 미량원소의 함량에 기록되어 있는 경우도 있다. 양휘석 지온계에 의하면 우리나라 페리도타이트 포획암의 평형온도는 대략 $850-1050^{\circ}C$ 범위이다. Sr-Nd 동위원소비는 결핍된 중앙해령현무암의 근원맨틀 성분(DMM)에서부터 지구전암(BSE) 성분 값까지 넓은 범위에 걸쳐있어, 오랜 시간의 성장과 진화의 역사를 대변하고 있다. Sr-Nd-Pb 동위원소비에 의하면 우리나라 암석권 맨틀은 대개 맨틀 단성분 중 DMM과 EM2의 혼합으로 설명되며, 상부 대륙지각과 연계될 수 있는 남북 내지는 동서방향으로의 지역성을 기록하고 있지는 않다. 이는 동아시아의 신생대후기 판내부기원 현무암류들이 기록하고 있는 남북간의 이분성과는 매우 대조적인 것으로, 동아시아 연약권 맨틀의 지역성을 시사하고 있다. Os 모델연대에 기초하면 우리나라 암석권 맨틀이 연약권으로부터 분리된 시기는 약 1.8-1.9 Ga로 추정된다.