• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1999.10a
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• pp.525-529
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• 1999

A cone shape drum polisher was developed to make up for the demerits of conventional CMP apparatus. The developed equipment has several superiorities. First of all, it can achieve uniform velocity profile on all the contact line because of its shape and easy to control the amount of slurry at the position of use. The whole area of wafer surface is exposed to the visual area except the contact line between wafer and drum, hence we can detect polishing end point more easily than any other polishing equipments. Also it has additional merits such as small foot print and polishing load. Polishing characteristics were investigated by developed equipment.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.7
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• pp.311-315
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• 2002

Chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD), inter-level dielectric (ILD) layers of multi-layer interconnections. In this paper, we studied the characteristics of polishing pad, which can apply shallow trench isolation (STI)-CMP process for global planarization of multi-level interconnection structure. Also, we investigated the effects of different sets of polishing pad, such as soft and hard pad. As an experimental result, hard pad showed center-fast type, and soft pad showed edge-fast type. Totally, the defect level has shown little difference, however, the counts of scratch was detected less than 2 on JR111 pad. Through the above results, we can select optimum polishing pad, so we can expect the improvements of throughput and device yield.

• International Journal of Precision Engineering and Manufacturing
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• v.2 no.1
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• pp.18-25
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• 2001

Electrolytic polishing is the anodic dissolution process in the transpassive state. It removes non-metallic inclusion and improves mechanical and corrosion resistance of stainless steel. If there is a Bailby layer, it will be removed and the true structure of the surface will be restored. Electrolytic polishing is normally used to remove a very thin layer of material from the surface of metal object. A new electrolyte composed of phosphoric, sulfuric and distilled water has been developed in this study. Two current density, high & low current density regions, have been applied in this study. In this study, In the region of high current density, there is no plateau region but excellent electrolytic polishing effect can be accomplished in short machining time because material removel process and leveling process occur simultaneously. In the low current density region, there can be found plateau region. The material removal process and leveling process occur successively. The aim of this work is to determine electrolytic polishing for stainless steel in terms of high & low current density and workpiece surface roughness.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.15 no.2
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• pp.72-77
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• 2016

Airplane reservoirs made of Al7075 are coated with an anodizing layer to maintain precision, air tightness and corrosion resistance. It is commonly required that the inner surface roughness of the reservoir be less than an average $0.2{\mu}m$ to maintain stable oil pressure. Even though precision polishing is necessary to achieve this quality it is not easy. Inner surface roughness is not uniform and the quality of the product is irregular because most of the work is done by hand. The purpose of this study is to design an exclusive polishing machine and to determine the standard cutting condition and polishing condition necessary for good inner surface roughness and to improve workefficiency.

• Design & Manufacturing
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• v.13 no.3
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• pp.48-52
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• 2019

As the consumer market in the mold, automation and aerospace industries grows, the demand for chemical machining using on electrochemical polishing increases. To enhance the surface roughness and gloss of the micro-needle, we have studied for an electrochemical polishing. Electrochemical polishing requires the chemical reaction of solution and material according to the electrolyte and electrode. In this study, sulfuric acid(30%), phosphoric acid(50%), and DI-water(20%)were used as the electrolytic solution, and the electrolytic solution temperature used $58^{\circ}C$. Electrochemical polishing was carried out in experimental conditions, and the micro-needle experiment was carried out from the basic experiment to obtain the experimental conditions. Experimental results show that as the voltage and current increase, the surface roughness improved and the gloss is improved. So, the best result for this experiment was obtained in condition 6, which improved micro-needle.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.1
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• pp.179-184
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• 2000

Chemical Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active and abrasive containing slurry. CMP process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves hydrodynamic behavior. The liquid slurry is trapped between the work piece and pad forming a hydrodynamic film. For the first step to understand material removal mechanism of the CMP process, the hydrodynamic analysis is done with semiconductor wafer. Three-dimensional Reynolds equation is applied to get pressure distribution of the slurry film. Shear stress distributions on the wafer surface are also analyzed

• Journal of the Microelectronics and Packaging Society
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• v.18 no.3
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• pp.25-32
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• 2011

We have studied on the slicing and polishing processes of R-plane sapphire wafers for the substrates of UHB nonpolar a-plane GaN LED. The fabrication conditions of the R-plane and c-plane wafers were influenced by the large anisotropic properties (mechanical properties) of the sapphire. The slicing process was more affected by the anisotropic properties of R-plane than the polishing process. When the slicing direction was $45^{\circ}$ to the a-flat, the slicing time was shorter and the quality of as-slicing wafers was better than the slicing direction of normal to the a-flat. The MRR(Material removal rate) of mechanical polishing processes such as lapping and DMP(Diamond mechanical polishing) did not show significant differences between the R-plane and c-plane. The MRR of the c-plane was about two times higher than that of R-planes at the CMP(Chemical mechanical polishing) process due to the formation of hydrolysis reaction layers on the surface of the c-plane.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.13 no.1
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• pp.92-99
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• 2014

An aspherical lens, which resolves several problems with a spherical lens,typically serves asa key part of an optical system. Generally, an aspherical lens is fabricated using a diamond turning machine or by mean of injection molding. However, residual stress and/or tool marks can arise when using a commercial fabricating method such as DTM or injection molding. A polishing process, thus, is commonly used to obtain a high-precision aspherical lens. In this study, a polishing method using MR fluid was applied to minimize several problems, in this case residual stress and the creation of tool marks, during the cutting process. The MR polishing system was developed to polish aspherical lenses. A series of experiments were performed to obtain a very fine surface roughness. PMMA (the lens material for molding) was used as a workpiece, and the gap size, magnetic field intensity, wheel speed and feed rate were selected as the parameters in this study. Finally, a very fine surface roughness of Ra=2.12nm was obtained after MR polishing.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.19 no.3
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• pp.22-28
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• 2020

This paper investigates the effects of retaining ring materials, particularly PPS and PEEK, used in the CMP process, on wafer polishing and ring wear. CMP can be performed using bonded type retaining rings made with PPS or injection molding type retaining rings made with PEEK. In this study, after polishing a wafer with a PPS retaining ring, the average profile height of the wafer was 0.098 ㎛ less than that of the wafer polished with a PEEK retaining ring, implying that PPS retaining rings achieve a higher polishing rate. In addition, the center area of the wafer profile had less deviation and improved flatness after polishing with the PPS ring. These results indicate that a higher polishing rate and smaller profile height deviation can be achieved using retaining rings made with PPS compared to retaining rings made with PEEK. Therefore, with semiconductor circuit patterns becoming finer and wafer sizes becoming larger, the use of PPS in CMP retaining rings can obtain more stable wafer polishing results compared to that of PEEK.

• Transactions on Electrical and Electronic Materials
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• v.2 no.3
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• pp.24-27
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• 2001

The end point of oxide chemical mechanical polishing (CMP) have determined by polishing time calculated from removal rate and target thickness of oxide. This study is about control of oxide removal amounts on the shallow trench isolation (STI) patterned wafers using removal rate and thickness of blanket (non-patterned) wafers. At first, it was investigated the removal properties of PETEOS blanket wafers, and then it was compared with the removal properties and the planarization (step height) as a function of polishing time of the specific STI patterned wafers. We found that there is a relationship between the oxide removal amounts of blanket and patterned wafers. We analyzed this relationship, and the post CMP thickness of patterned wafers could be controlled by removal rate and removal target thickness of blanket wafers. As the result of correlation analysis, we confirmed that there was the strong correlation between patterned and blanket wafer (correlation factor: 0.7109). So, we could confirm the repeatability as applying for STI CMP process from the obtained linear formula. As the result of repeatability test, the differences of calculated polishing time and actual polishing time was about 3.48 seconds. If this time is converted into the thickness, then it is from 104 $\AA$ to 167 $\AA$. It is possible to be ignored because process margin is about 1800 $\AA$.