• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.360-361
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• 2005

Rapid progress in IC fabrication technology has strong demand in polishing of silicon wafer to meet the tight specification of nanotopography and surface roughness. One of the important issues in Si CMP is the stabilization of polishing pad. If a polishing pad is not stabilized before main Si wafer polishing process, good polishing result can not be expected. Therefore, new pad must be subjected into break-in process using dummy wafers for a certain period of time to enhance its performance. After the break-in process, the main Si wafer polishing process must be performed. In this study, the characteristics of break-in process were investigated in Si wafer polishing. Viscoelastic behavior, temperature variation of pad and friction were measured to evaluate the break-in phenomenon. Also, it is found that the characteristic of the break-in seems to be related to viscoelastic behavior of pad.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.11 no.1
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• pp.7-12
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• 2012

Chemical mechanical polishing(CMP) technology is faced with the challenge of processing new electronic materials. This paper focuses on the balance between chemical and mechanical reactions in the CMP process that is required to cope with a variety of electronic materials. The material properties were classified into the following categories: easy to abrade(ETA), difficult to abrade(DTA), easy to react(ETR) and difficult to react(DTR). The chemical and mechanical balance for the representative ETA-ETR, DTA-ETR, ETA-DTR and DTA-DTR materials was considered for defect-free surfaces. This paper suggests the suitable polishing methods and examples for each electronic material.

• Tribology and Lubricants
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• v.15 no.1
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• pp.90-97
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• 1999

Chemical-Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active, abrasive containing slurry. CU process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves tribology. The liquid slurry is trapped between the wafer (work piece) and pad (tooling) forming a lubricating film. For the first step to understand material removal rate of the CMP process, the lubricational analyses were done with commercial 100mm diameter silicon wafers to get nominal clearance of the slurry film, roll and pitch angle at the steady state. For this purpose, we calculate slurry pressure, resultant forces and moments at the steady state in the range of typical industrial polishing conditions.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.14 no.3
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• pp.36-42
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• 2015

The aspherical lens was designed to be able to array a focal point. For this reason, it has very curved surface. The aspherical lens is fabricated by injection molding or diamond turning machine. With the aspherical lens, tool marks and surface roughness affect the optical characteristics, such as transmissivity. However, it is difficult to polish free form surface shapes uniformly with conventional methods. Therefore, in this paper, the ultra-precision polishing method with MR fluid was used to polish an aspherical lens with 4-axis position control systems. A Tool path and polishing mechanism were developed to polish the aspherical lens shape. An MR polishing experiment was performed using a generated tool path with a PMMA aspherical lens after the turning process. As a result, surface roughness was improved from $R_a=40.99nm$, $R_{max}=357.1nm$ to $R_a=4.54nm$, $R_{max}=35.72nm$. Finally, the MR polishing system can be applied to the finishing process of fabrication of the aspherical lens.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.12
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• pp.1253-1258
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• 2013

Ceramic particles as polishing abrasives are often used in a magnetic abrasive polishing process because they have strong wear resistance. Non-ferromagnetic ceramic abrasives should be mixed with ferromagnetic iron particles for controlling the mixture within a magnetic brush during the polishing process. This study describes the application of the ceramic particles for the magnetic abrasive polishing. The distribution of the magnetic abrasives attached on a tool varies with magnetic flux density and tool rotational speed. From the correlation between abrasive adhesion ratio in the tool and surface roughness produced on a workpiece, practical polishing conditions can be determined. A step-over for polishing a large sized workpiece is able to be selected by a S curve, and an ultrasonic vibration assisted MAP produces a better surface roughness and increases a polishing efficiency.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1999.11a
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• pp.263-268
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• 1999

Langasite, a new piezoelectric material was polished by CMP(chemical mechanical polishing). To enhance the polishing rate, alumina abrasives were added to commercial ILD1300 slurry which contains silica abrasive. The effect of added alumina 0 the silica slurry on the polishing rate and damage of langasite was investigated, Experimental results show that the polishing rate and roughness increases with increasing added alumina particle size, Crystallinity of the langasite is also lowered by alumina addition.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.433-434
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• 2002

Chemical mechanical polishing refers to a process by which silicon and partially-processed integrated circuits (IC's) built on silicon substrates are polished to produce planar surfaces for the continued manufacturing of IC's. Chemical mechanical polishing is done by pressing the silicon wafer, face down, onto a rotating platen that is covered by a rough polyurethane pad. During rotation, the pad is flooded with a slurry that contains nanoscale particles. The pad deforms and the roughness of the surface entrains the slurry into the interface. The asperities contact the wafer and the surface is polished in a three-body abrasion process. The contact of the wafer with the 'soft' pad produces a unique elastohydrodynamic situation in which a suction force is imposed at the interface. This added force is non-uniform and can be on the order of the applied pressure on the wafer. We have measured the magnitude and spatial distribution of this suction force. This force will be described within the context of a model of the sliding of hard surfaces on soft substrates.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.8
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• pp.887-892
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• 2014

In a conventional magnetic abrasive polishing process, the polishing abrasives are mixed with ferrous particles and slight cutting oil to form a cluster of abrasives. However, when a tool rotates at a high revolution speed, most of the polishing abrasives are scattered away from it due to the increase in centrifugal force. This phenomenon directly reduces the polishing efficiency. The use of a highly viscous matter such as silicone gel instead of cutting oil for mixing is one method to solve this problem and increase abrasive adhesion. Another method to avoid high abrasive scattering is the application of wet magnetic abrasive polishing (WMAP). In WMAP, abundant mineral oil is preliminarily applied to the workpiece surface. This study experimentally evaluated the effect of WMAP on abrasive adhesion. The relationship between the amount of working abrasives and polishing conditions was characterized. Despite the lower adhesion ratio of polishing abrasives, the surface roughness was found to be significantly improved as the result of WMAP.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.464-467
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• 2005

Among several polishing techniques for micro structures, polishing process using magnetorheological(MR) fluid has advantages in the finishing process of 3-D micro structures because abrasives in the fluid can reach surfaces with complex feature and play their role. Although many researchers have been trying to reveal its polishing mechanism of the MR polishing, it has not been successful because in-situ measurement of state variables is difficult and process parameters are complex. In fact, one of the key factors for applying process control methodologies, such as Run-to-Run control, is the measuring and monitoring of slurry quality because the process strongly depends on the fluid property. Therefore, it is necessary to maintain consistent slurry quality to guarantee the process repeatability. The proposed equipment achieves the longer life cycle of MR fluid and reduces the variability of products. A new method to measure the material removal rate in MRF polishing process is also proposed and discussed.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.25 no.2
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• pp.112-117
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• 2016

In the construction industry, concrete polishing is used to grind and rub the surface of concrete grounds with polishing machines to increase the strength of the concrete after deposition. Polishing is performed manually in spite of the generation of dust and the requirement of frequent replacements of the polishing pad. The concrete polishing robot developed in this research is a novel polishing automation system for preventing the workers from being exposed to poor working environments. This robot is able to change multiple polishing tools automatically; however, the workers can conveniently replace the worn-out polishing pads with new ones. The mobile platform of the polishing robot employs omnidirectional wheels to enable a flexible motion even in small and complicated workspaces. To evaluate the performance of the developed concrete polishing robot, extensive experiments including square trajectory tracking, automatic tool changing, actual polishing, and path generation simulation were performed.