• Advances in environmental research
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• v.6 no.4
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• pp.241-254
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• 2017

This study was conducted to investigate the levels of heavy metals in twelve species of vegetables and assessment of health risk. Samples were analyzed using inductively coupled plasma mass spectrometer (ICP-MS). The ranges of Cr, Ni, Cu, As, Cd and Pb in vegetables species were 0.37-5.4, 0.03-17, 0.35-45, 0.01-2.6, 0.001-2.2, and 0.04-8.8 [mg/kg, fresh weight (fw)], respectively. The concentrations of As, Cd and Pb in most vegetable species exceeded the maximum permissible levels, indicating unsafe for human consumption. Health risks associated with the intake of these metals were evaluated in terms of estimated daily intake (EDI), and carcinogenic and non-carcinogenic risks by target hazard quotient (THQ). Total THQ of the studied metals from most of the vegetables species were higher than 1, indicated that these types of vegetables might pose health risk due to metal exposure. The target carcinogenic risk (TR) for As ranged from 0.03 to 0.48 and 0.0004 to 0.025 for Pb which were higher than the USEPA acceptable risk limit (0.000001) indicating that the inhabitants consuming these vegetables are exposed to As and Pb with a lifetime cancer risk. The findings of this study reveal the health risks associated with the consumption of heavy metals through the intake of selected vegetables in adult population of Bangladesh.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.431-435
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• 2002

The dark current and photocurrent(PC) spectrum of Mg-doped GaN thin film were investigated with various bias voltages and temperatures. At high temperature and small bias, the dark current is dominated by holes thermally activated from an acceptor level Al located at about 0.16 eV above the valence band maximum $(E_v)$, The PC peak originates from the electron transition from deep level A2 located at about 0.34 eV above the $E_v$ to the conduction band minimum $(E_ C)$. However, at a large bias voltage, holes thermally activated from A2 to Al experience the field-in-duces tunneling to form one-dimensional defect band at Al, which determines the dark current. The PC peak associated with the transition from Al to $E_ C$ is also observed at large bias voltages owing to the extended recombination lifetime of holes by the tunneling. In the near infrared region, a strong PC peak at 1.20 eV appears due to the hole transition from deep donor/acceptor level to the valence band.

• Convergence Security Journal
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• v.6 no.3
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• pp.145-153
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• 2006

Infinite failure NHPP models for a record value satisfies mode proposed in the literature exhibit either monotonic increasing or monotonic decreasing failure occurrence rates per fault. In this paper, propose comparative study of software reliability model using Erlang distribution, Rayleigh and Gumbel distribution. Equations to estimate the parameters using maximum likelihood estimation of infinite failure NHPP model based on failure data collected in the form of interfailure times are developed. For the sake of proposing distribution, we used to the special pattern. Analysis of failure data set using arithmetic and Laplace trend tests, goodness-of-fit test, bias tests is presented.

• Proceedings of the KIEE Conference
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• 1999.07f
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• pp.2597-2600
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• 1999

Semiconductor devices can be series stacked for the application of high voltage switching. It can provide high reliability and long lifetime by the safe design with a reasonable margin. The equal voltage distribution at solid-state switches in series should be guaranteed. Static and dynamic voltage division, over current protection must be considered carefully in the design stage. A fast switching thyristor is a good candidate for the high power pulse applications. A high voltage switching module is designed and tested. Its specifications are working voltage of 70 kV, switching pulse width of 120${\mu}s$, peak switching current of 220A, maximum repetition rate of 200pps. The module can be series connected to get higher working voltage. This paper presents the design details and the test results are compared with expected circuit simulations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.365-365
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• 2010

In this paper, silicon nitride thin films with different silane and ammonia gas ratios were deposited and characterized for the antireflection and passivation layer of high efficiency single crystalline silicon solar cells. As the flow rate of the ammonia gas increased, the refractive index decreased and the band gap increased. Consequently, the transmittance increased due to the higher band gap and the decrease of the defect states which existed for the 1.68 and 1.80 eV in the SiNx films. The reduction in the carrier lifetime of the SiNx films deposited by using a higher $NH_3/SiH_4$ flow ratio was caused by the increase of the interface traps and the defect states in/on the interface between the SiNx and the silicon wafer. The silicon and nitrogen rich films are not suitable for generating both higher carrier lifetimes and transmittance. These results indicate that the band gap and the defect states of the SiNx films should be carefully controlled in order to obtain the maximum efficiency for c-Si solar cells.

• Journal of Radiation Protection and Research
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• v.26 no.3
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• pp.225-229
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• 2001

In Korea, an advanced reactor system of 330MWt power called SMART (System integrated Modular Advanced ReacTor) is being developed by KAERI to supply energy for seawater desalination as well as electricity generation. A shielding design of the SMART core with 49 CEDM is established by a two-dimensional discrete ordinates radiation transport analyses. The DORT two-dimensional discrete ordinates transport code is used to evaluate the SMART shielding designs. Three axial regions represent the SMART reactor assembly, each of which is modeled in the R-Z geometry. The BUGLE-96 library is used in the analyses, which consists of 47 neutron and 20 gamma energy groups. The results indicate that the maximum neutron fluence at the bottom of reactor vessel is $5.89 {\times} 10^{17}\;n/cm^2$ and that on the radial surface of reactor vessel is $4.49 {\times} 10^[16}\;n/cm^2$. These results meet the requirement, $1.0 {\times} 10^{20}\;n/cm^2$, in 10 CFR 50.61 and the integrity of SMART reactor vessel during the lifetime of the reactor is confirmed.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.20 no.5
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• pp.1700-1716
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• 1996

The two-dimensional, unsteady, laminar conservation equations for mass, momentum, energy and species transport in the gas phase and mass, momentum and energy in the liquid phase are solved simultaneously in spherical coordinates in order to study heating and vaporization of a droplet entrained in the oscillating flow. The numerical solution gives the velocity and temperature distribution in both gas and liquid phase as a function of time. When the gas flow oscillates around an vaporizing droplet, the liquid flow circulates in the clockwise or counterclockwise direction and the temperature distribution in the liquid phase changes its shapes, depending on the gas fow direction. When the gas flow changes its direction of circulating liquid flow is opposite to the gas flow, forming two vortex circulating in the opposite direction. During the heating period, the difference in the maximum and minimum temperature is large, followed by the almost uniform temperature slightly below the boiling temperature. The mass and heat transfer from the droplet depend on the droplet temperature, droplet diameter and the magnitude of relative velocity, giving the droplet lifetime different from the d$^{2}$-law.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.3
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• pp.72-78
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• 1990

In this paper, the physical meanings of LDD optimization are treated by numerical simulation and related experiments are attempted to analyzed the optimized LDD structure. Firstly, according to the numerical analysis, the electric field under the n-region near drain is low and uniformly distributed and the current flow is widely distributed in this region under the optimized conditions. It is also found that this optimized point should be achieved by globally optimizing all the process and electrical conditions. Secondly, the maximum electric field, which is obtained from the substrate current to the drain current ratio, is minimized under the optimized condition according to the experiment. Further, the device lifetime is maximized and the n-resistance is changed smoothly from the channel resistance to the $n^+$junction resistance.

• Animal cells and systems
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• v.3 no.4
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• pp.369-374
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• 1999

The life history and development of Tetrastichus sp. parasitizing fallwebworm pupa in Korea were studied. The mean lifetime fecundity was 94.7 with a maximum of 125, and the portion of female progeny averaged 90.3%. A male and a female lived for an average of 19.8${\pm}$4.5 and 21.7${\pm}$4.2 days, respectively. The duration of development for each stage was as follows: egg, 2 d; the 1st instar larva, 2${\pm}$1 d; the 2nd instar larva, 2${\pm}$1 d: the 3rd instar larva, 3${\pm}$1 d; the 4th instar larva, 6${\pm}$2 d; and pupa, 8${\pm}$2 d. Total developmental duration from hatching of the larva to adult emergence required 21.1${\pm}$3.7 d, and females took 1-2 days more than males in the incubator (28$^{\circ}C$, 70% RH, and 16:8 LD).

• Journal of Korean Society for Quality Management
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• v.25 no.1
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• pp.80-99
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• 1997

This paper considers designing the simple (2-level) constant-and step-stress ALTs minimizing the asymptotic variance of the maximum likelihood estimator of the accelaeration factor, which is defined as the ratio of the 100qth percentile at use stress to that a specified stress, for items having lognormally-distributed lives. It is assumed that (i) the log-linear relationship exists between the stress and the mean log life, (ii) the standard deviation of the log life is constant, and (iii) the cumulative exposure model holds for the effect of changing stress. For the constant-stress ALT the low stress and the sample proportion allocated to low stress are determined and for two modes of stress loading of step-stress ALTs, the low-to-high and high-to-low, the low stress and the stress change time are determined. For selected values of the design parameters the optimum plans are figured, two modes of step-stress ALTs and the constant-stress ALT are compared to each other, and the effects of the incorrect pre-estimates of the design parameters are investigated.