• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.76-77
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• 2009

In this paper, We have studied Electron Transport Layer(ETL) in the New Organics applied to Red phosphorescent organic light-emitting devices. The structure of ITO/2-TNATA(15nm)/CBP;$Ir(piq)_3$/DPVBi(30nm)/New ETL(60nm)/LiF(0.5nm)/Al(100nm) has been used, measured changing doping concentration of EML. The results of OLED turn-on voltage at 2.2V, and Maximum Luminance at 2.8V was $1000cd/m^2$. This high luminance at low voltage results from a high electron. conduction of the new electron transport layer.

• 한국해양공학회지
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• 제10권3호
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• pp.105-116
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• 1996

In this paper, we report the experimental results for the flow pattern and the material transport around a cavity subject to a sinusoidal external flow at the far region to ward the open side of the cavity. A tilting mechanism is used to generate a oscillatory flow inside a shallow rectangular container having a cavity at one side. The surface flow visualization is performed to obtain the unsteady behavior of vortices generated at two edges situated at the entrance of the cavity. It was found that at the period 4.5 sec., the behavior of the vortices is asymmetric, and there exists a steady residual flow in the cavity. The bottom flow patterns are also visualized. There are two regions outside of the cavity where the bottom fluid particles concentrate. The material transport in this flow model is very peculiar; fluid particles in the cavity flows outward through the passage along the walls starting from the edges, and particles in the outer region approach the cavity from the central region.

• 한국막학회:학술대회논문집
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• 한국막학회 1997년도 추계 총회 및 학술발표회
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• pp.67-68
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• 1997

1. Introduction : Gas transport through dense polymeric membranes is predominantly determined by the chain packing density as well as the chain flexibility. Thus, improved permeation properties can be obtained by controlling these two factors. In this work, the introduction of bulky substituents was attempted to improve permeation properties. Polysulfone, widely used material for gas separation membrane, was the starting material of this modification. Gas transport properties of resulting modified polysulfones were examined, and the improved properties were explained by probing the change of physical properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1002-1006
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• 2004

The studies on OLED(Organic Light-Emitting Diode) materials and structures have been researched in other to improve luminescence efficiency of OLED. Electrons and holes are injected into the devices, transported across the layer and recombine to form excitons, their profiles are sensitive to mobility velocity of electrons and holes. A suggested means of improving the efficiency of LEDs would be to balance the injection of electrons and holes into light emission layer of the device. In this paper, we demonstrate the difference of velocity between hole and electron by experiments, and compare with a data of simulation and experiment changing hole carrier transport layer thickness, so we get the optimal we improve luminescence efficiency. We improve understanding of the various luminescence efficiency through experiments and numerical analysis of luminescence efficiency in the hole carrier transport layer's thicknes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.43-43
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• 2010

HTS(High Temperature Superconductor) cable has a high possibility of practical use due to the possibility of low voltage and high capacity transmission caused by its lower power loss than copper cable. On the other hand, when fault current occurred, resistance increase caused by superconductivity loss, the amount of power supplies has diminished, furthermore, it's necessary to take the possible danger of damage to HITS cable into account. Therefore, an effective plan for dealing with the above problem is to link HITS cable to SFCL. In this study, we researched the possibilities of normal transport current as well as the safety of HITS cable by analyzing the properties of transport current in HITS cable connected with SFCL.

• 한국전기전자재료학회논문지
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• 제20권5호
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• pp.389-393
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• 2007

We fabricated field-effect transistor based carbon nanotubes(CNTs) directly grown by thermal chemical vapor deposition(CVD) and analyzed their performance. The Ethylene ($C_2H_4$), hydrogen($H_2$) and Argon(Ar) gases were used for the growth of CNTs at $700\;^{\circ}C$. The growth properties of CNTs on the device were analyzed by SEM and AFM. The electrical transport characteristics of CNT FET were investigated by I-V measurement. Transport through the nanotubes is dominated by holes at room temperature. By varying the gate voltage, we successfully modulated the conductance of FET device by more than 7 orders of magnitude.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.174-177
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• 2001

The electron transport coefficients, the electron drift velocity W, the longitudinal diffusion coefficient $ND_L$ and $D_L/{\mu}$, in pure Xe were calculated over the wide E/N range from 0.01 to 500 Td at 1 Torr by two-term approximation of the Boltzmann equation for determination of electron collision cross sections set and for quantitative characteristic analysis of Xe molecular gas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.182-185
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• 2001

The electron transport coefficients, the electron drift velocity W, the longitudinal diffusion coefficient $ND_L$ and $D_L/{\mu}$, in pure Ne were calculated over the wide E/N range from 0.01 to 300 Td at 1 Torr by two-term approximation of the Boltzmann equation for determination of electron collision cross sections set and for quantitative characteristic analysis of Ne molecular gas.

• 한국전기전자재료학회논문지
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• 제13권7호
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• pp.630-635
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• 2000

Superconducting power cable is one of the most promising energy application of high-T$\sub$2/ superconductor(HTS). Thus we investigated previously the electrical and mechanical characteristics on Bi-2223 Ag sheathed tape. And a prototype HTS cable have been designed constructed and tested. In case of 19-filament type transport losses agree with the results of norris theory(strip). The critical current of HTS cable(1, 19-filament) in LN$_2$was 116[A], 240[A] and degradation coefficient(k) was 0.71, 0.73 respectively. In case of 19-filament cable critical current was decreased because of mechanical strain at pitch. And AC loss of HTS cable(19-filament) was 0.7 [W/m] in 240[A] loading

• E2M - 전기 전자와 첨단 소재
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• 제10권9호
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• pp.922-929
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• 1997

As the size of semiconductor devices shrinks in the horizontal as well as vertical dimension it is difficult to estimate the transport-velocity of electron because they drift in non-equilibrium with a few scattering. In this paper HYbrid Monte Carlo simulator which employs the drift-diffusion model for hole-transport and Monte Carlo model for electron-transport in order to reduce the simulation time and increase the accuracy as well has been developed and applied to analyze the electron-transport in InAlAs/InGaAs HBT which is attractive for an ultra high speed active device in high speed optical fiber transmission systems in terms of the velocity and energy distribution as well as cutoff frequency.