• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.246-251
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• 2013

Screen printing is commonly used to form the front/back electrodes in silicon solar cell. But it has caused high resistance and low aspect ratio, resulting in decreased conversion efficiency in solar cell. Recently the plating method has been combined with screen-printed c-Si solar cell to reduce the resistance and improve the aspect ratio. In this paper, we investigated the effect of light induced silver plating with screen-printed c-Si solar cells and compared their electrical properties. All wafers were textured, doped, and coated with anti-reflection layer. The metallization process was carried out with screen-printing, followed by co-fired. Then we performed light induced Ag plating by changing the plating time in the range of 20 sec~5min with/without external light. For comparison, we measured the light I-V characteristics and electrode width by optical microscope. During plating, silver ions fill the porous structure established in rapid silver particle sintering during co-firing step, which results in resistance decrease and efficiency improvement. The plating rate was increased in presence of light lamp, resulting in widening the electrode with and reducing the short-circuit current by shadowing loss. With the optimized plating condition, the conversion efficiency of solar cells was increased by 0.4% due to decreased series resistance. Finally we obtained the short-circuit current of 8.66 A, open-circuit voltage of 0.632 V, fill factor of 78.2%, and efficiency of 17.8% on a silicon solar cell.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.575-579
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• 2010

The technologies of Ni/Cu plating contact is attributed to the reduced series resistance caused by a better contact conductivity of Ni with Si and the subsequent electroplating of Cu on Ni. The ability to pattern narrower grid lines for reduced light shading was combined with the lower resistance of a metal silicide contact and an improved conductivity of the plated deposit. This improves the FF (fill factor) as the series resistance is reduced. This is very much requried in the case of low concentrator solar cells in which the series resistance is one of the important and dominant parameter that affect the cell performance. A Selective emitter structure with highly dopeds regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing In this paper the formation of a selective emitter, and the nickel silicide seed layer at the front side metallization of silicon cells is considered. After generating the nickel seed layer the contacts were thickened by Cu LIP (light induced plating) and by the formation of a plated Ni/Cu two step metallization on front contacts. In fabricating a Ni/Cu plating metallization cell with a selective emitter structure it has been shown that the cell efficiency can be increased by at least 0.2%.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.3 no.3
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• pp.79-85
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• 2004

The lightness of components required in automobile and machinery industry is requiring high strength of components. In particular, fatigue failure phenomena, which happen in metal, bring on danger in human life and property. Therefore, antifatigue failure technology takes an important part of current industries. Currently, the shot peening is used for removing the defects from the surface of steel and improving the fatigue strength on surface. Therefore, in this paper the effect of compressive residual stress of spring steel(JISG SUP-9)by shot peening on fatigue crack growth characteristics in stress ratio(R=0 1, R=0 3, R=0 6)was investigated considering fracture mechanics. By using the methods mentioned above, I arrived at the following conclusions: (1) The fatigue crack growth rate(da/dN) of the shot peening material was lower than the unpeening material And in stage I, ${\Delta}K_{th}$, the threshold stress intensity factor, of the shot peening material is high in critical parts unlike the unpeening material. (2) Fatigue life shows more Improvement in the shot peening material than in the unpeening material. And compressive residual stress of surface on the shot peening processed operate the resistance of fatigue crack propagation.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.268-268
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• 2010

The performance dependence of the P3HT:PCBM based bulk hetero-junction (BHJ) organic solar cells (OSCs) on the electrical and the optical properties of amorphous InZnSnO (a-IZTO) electrodes as a difference in film thicknesses are examined. With an increasing of the a-IZTO thickness, the series resistance ($R_{series}$) of the OSCs is reduced because of the reduction of sheet resistance ($R_{sheet}$) of a-IZTO electrodes. Additionally, It was found that the photocurrent density ($J_{sc}$) and the fill factor (FF) in OSCs are mainly affected by the electrical conductivity of the a-IZTO anode films rather than the optical transparency at thinner a-IZTO films. On the other hand, despite the much lower $R_{series}$ comes from thicker anode films, the dominant factor affecting the $J_{sc}$ became average optical transmittance of a-IZTO electrodes as well as power conversion efficiency (PCE) in same device configuration due to the thick anode films had as sufficiently low $R_{sheet}$ to extract the hole carrier from the active material.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.3
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• pp.77-81
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• 2017

Pulse electroplating of Ni-P alloy was studied to fulfill the material requirement to the advanced vertical probe tip in wafer probe card. The major concerns are for the electrical conductivity and yield strength. Plating parameters such as current density, duty cycle and solution components were examined to obtain the nanocrystal structure and proper percentage of phosphorus, leading to how to control the nanocrystal grain growth and precipitation of $Ni_3P$ after heat treatment. Among the parameters, the amount of phosphorus acid was the main factor affecting on the grain size and sheet resistance, and the amount of 0.1 gram was appropriate. Since hardness in Ni-P alloy is increased by as-plated nanocrystal structure plus precipitation of $Ni_3P$, the concentration of P less than 15 at% was better choice for the grain coarsening without minus in hardness value. The following heat treatment made grain growth and dispersion of precipitates adjustable to meet the target limit of resistance of $100m{\Omega}$ and hardness number of over 1000Hv. The Ni-P alloy will be a candidate for the substitute of the conventional probe tip material.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.470-474
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• 2001

This paper describes the fabrication and characteristics of CrN thin-film type pressure sensors, in which the sensing elements were deposited on SuS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%)N$_2$). The optimized condition of CrN thin-film sensing elements was thickness range of 3500$\AA$ and annealing condition(300$\^{C}$, 3 hr) in Ar-10%N$_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, ρ=1147.65 $\mu$Ωcm, a low temperature coefficient of resistance, TCR=186ppm/$\^{C}$ and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4∼20nA and the maximum non-linearity is 0.4%FS and hysteresis is less than 0.2%FS.

• Journal of the Korea Furniture Society
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• v.20 no.4
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• pp.339-357
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• 2009

Probability based design(PBD) method is independent of construction materials and uses real material properties unlike allowable stress design(ASD) that depends on small clear specimen property, also give quantitative safety and endurance lifetime of a certain material. Moreover, almost advanced country accepted PBD method instead of ASD method. So it is urgent to convert the current ASD method into the PBD method. However, there are wholly lacking of domestic researches related to current issue, and to solve several points in ASD method and to take advantage of PBD method, the conversion from the ASD method into the PBD method is a worldwide trend. Other domestic construction codes, such as steel or concrete constructions, accept the PBD method as well. Accordingly, to introduce PBD method into wood structural design, general theory, and preliminary data and methods were reviewed. With keeping this in mind, some important contents were reviewed, sorted some points for wood structural design that have distinctions against the other construction materials. Furthermore, the history of PBD method, and statistical data and theories for the PBD method, and preliminary data of resistance and load that are two random variables for the PBD method, and finally the difference between limit state design(LSD) and load and resistance factor design(LRFD) that were two superpowers in the PBD method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.731-734
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• 2002

This paper describes on the fabrication and characteristics of a ceramic thin-film pressure sensor based on Ta-N strain gauges for harsh environment applications. The Ta-N thin-film strain gauges are sputter deposited onto a micromachined Si diaphragms with buried cavity for overpressure protectors. The proposed device takes advantages of the good mechanical properties of single crystalline Si as diaphragms fabricated by SDB and electrochemical etch-stop technology, and in order to extend the operating temperature range, it incorporates relatively the high resistance, stability and gauge factor of Ta-N thin-films. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability. The sensitivity is $1.097{\sim}1.21mV/V{\cdot}kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.105-109
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• 1992

ITO film, 1500${\AA}$ of thickness, onto glass and p-InP wafer was prepared by e-beam evaporator. The bet ITO film had the resistivity 5.3${\times}$10$\^$-3/ $\Omega$-cm, the concentration 6.5${\times}$10$\^$20/cm$\^$-3/, the transmittance above 80%, and the optical energy gap about 3.5eV. The higher pressure of injected oxygen, the less reverse bias saturation current and the more open circuit voltage. Under the optimum evaporation conditions, the efficiency was 7.19% and the series resistance, and the shunt resistance were respectively 8.5%, 3${\alpha}$, and 26K$\Omega$. The interdependence between activation energy and pre-exponential factor was found. We found he surface of the p-InP became n-type and consquently supposed that the buried homojunction formation, that is, n+-ITO/n-InP/p-InP was caused by Sn diffusion or loss of phosphorus in the interface layer.

• Computers and Concrete
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• v.8 no.2
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• pp.229-241
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• 2011

In this work, cement paste samples with 1% (by cement mass) of a conductive carbon fiber admixture have been studied under uniaxial compression. Three different arrangements were used to measure the resistivity of the samples. According to the results obtained, the resistance should be measured using the four wire method in order to obtain good sensitivity and repeatability. The effect of the load value and the load rate on the fractional change of the volume resistivity has been determined. It has been observed that the gage factor (fractional change in resistance respect to strain) increases when the maximum load is increased, and the loading rate does not affect significantly this parameter. The effect of the sample ambient humidity on the material piezoresistivity has also been studied, showing that the response of the composite is highly affected by this parameter.