• Title/Summary/Keyword: magnetron

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The properties of copper films deposited by RF magnetron sputtering (RF 마그네트론 스퍼터링법에 의해 증착된 구리막의 특성)

  • 송재성;오영우
    • Electrical & Electronic Materials
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    • v.9 no.7
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    • pp.727-732
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    • 1996

  • In the present paper, the Cu films 4.mu.m thick were deposited by RF magnetron sputtering method on Si wafer. The Cu films deposited at a condition of 100W, 10mtorr exhibited a low electrical resistivity of 2.3.mu..ohm..cm and densed microstructure, poor adhesion. The Cu films grown by 200W, 20mtorr showed a good adhesion property and higher electrical resistivity of 7.mu..ohm..cm because of porous columnar microstructure. Therefore, The Cu films were deposited by double layer deposition method using RF magnetron sputtering on Si wafer. The dependence of the electrical resistivity, adhesion, and reflectance in the CU films [C $U_{4-d}$(low resistivity) / C $U_{d}$(high adhesion) / Si-wafer] on the thickness of d has been investigated. The films formed with this deposition methods had the low electrical resistivity of about 2.6.mu..ohm..cm and high adhesion of about 700g/cm.m.m.

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Cooling Performance Analysis of Water-Cooled Large Area Magnetron Sputtering System (대면적 마그네트론 스퍼터링 증착장비의 수냉시스템 방열성능 해석)

  • Kim, Kyoung-Jin
    • Journal of the Semiconductor & Display Technology
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    • v.9 no.2
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    • pp.111-116
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    • 2010

  • In a large area magnetron sputtering system, which is under the influence of high heat load from the plasma, it is necessary to use the effective water cooling in order to maintain the proper deposition performance and the economic use of target materials. A series of three-dimensional numerical simulations are carried out on the simplified model of the large area magnetron sputtering system with the cooling plate that includes the U-shaped water channel. The analysis is focused on the effects of water channel geometry, cooling water flowrate, thermal conductivity of target material, and the degree of target erosion on the cooling performance of cooling plate, which is represented by the temperature distribution of target material.

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