• Journal of Magnetics
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• v.10 no.3
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• pp.103-107
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• 2005

Magnetotransport is a prerequisite to realization of electronic operation of spintronic devices and it would be more useful if realized at room temperature. The effects of Be codoping on GaMnAs on magnetotransport were investigated. Mn flux was varied for growth of precipitated GaMnAs layers under a Be flux for degenerate doping via low-temperature molecular beam epitaxy. Magnetotransport as well as ferromagnetism at room temperature were realized in the precipitated GaAs:(Mn,Be) layers. Codoping of Be was shown to promote formation of MnGa clusters, and annealing process further stabilized the cluster phases. The room-temperature magnetic properties of the layers originate from the ferromagnetic clusters of MnGa and MnAs embedded in GaAs. The degenerately doped metallic GaAs matrix allowed the visualization of the magnetotransport through anomalous Hall effect.

• Journal of Magnetics
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• v.11 no.1
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• pp.5-7
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• 2006

The magnetotransport properties at room temperature of the 250-nm-thick MnAs(-1100) film grown on GaAs(001) substrate by molecular beam epitaxy was investigated. The results measured with various magnetic field directions were reported. They show the negative magnetoresistive effect for all field directions. The difference in the magnetoresistance curves for different field directions is in agreement with the magnetic anisotropy of the film.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.150-151
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• 2002

In recent years, semi-metallic Bismuth (Bi) has attracted significant attention due to very large magnetoresistance (MR) at room temperature originating from long carrier mean free path l and small effective carrier mass m＊[1, 2]. In particular, the MR behavior and long carrier mean free path l in Bi thin films can be exploited for spintronic devices, e.g. magnetic field sensors and spin-valve transistors. In present work, we present the magnetotransport properties of the electroplated and sputtered Bi thin films in the temperature range 4-300 K. (omitted)

• Proceedings of the Korean Magnestics Society Conference
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• 2000.05a
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• pp.130-131
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• 2000

• Journal of Magnetics
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• v.14 no.2
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• pp.90-92
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• 2009

This study examined the current-induced spin wave excitation in asymmetric nanopillar junctions with a stack sequence of 20 nm Pt/10 nm Cu/7 nm NiFe/300 nm Cu, and a circular lateral dimension of 240 nm. An analysis of the magnetic and magnetotransport characteristics of the junction showed a possible spin transfer effect at this sample dimension when the magnetization was switched from a vortex state to another state. This finding is expected to help improve the understanding of the spin transfer torque phenomenon in nanopillar junctions.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.190.2-190.2
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.64.1-64.1
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.205.1-205.1
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 2001.07a
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• pp.64-65
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• 2001

• Proceedings of the Korean Magnestics Society Conference
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• 2012.05a
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• pp.146-146
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• 2012