• Title/Summary/Keyword: magnetoresistance effect

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Magnetoresistance characteristics of EeN/Co/Cu/Co system spin-valve type multilayer (FeN/Co/Cu/Co계 spin-valve형 다층악의 자기저항 특성)

  • 이한춘;송민석;윤성호;김택기
    • Journal of the Korean Magnetics Society
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    • v.10 no.5
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    • pp.210-219
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    • 2000

  • The magnetoresistance characteristics of FeN/Co/Cu/Co and FeN/Co/Cu/Co/Cu/Co/FeN multilayers using ferromagnetic iron-nitrides (FeN) has been studied. The microstructure of FeN film is the mixed ${\alpha}$-Fe and $\varepsilon$-Fe$_3$N phase on the condition that the flow rate of N$_2$ gas is over 0.4 sccm. The magnetoresistance effect is observed because of shape magnetic anisotropy induced by needle-shaped $\varepsilon$-Fe$_3$N phase. This magnetoresistance effect changes, because the degree that the shape magnetic anisotropy adheres to the adjacent Co pinned layer is varied according to the flow rate of N$_2$ gas and the thickness of FeN film. The best magnetoresistance effect is obtained on the condition that the thickness of Co free layer is 70 ${\AA}$ and the maximum MR ratio(%) value of 3.2% shows in the FeN(250 ${\AA}$)/Co(70 ${\AA}$)/Cu(25 ${\AA}$)/Co(70 ${\AA}$)/Cu(25 ${\AA}$)/Co(70 ${\AA}$)/FeN(250 ${\AA}$) mutilayer film which is fabricated at the N, gas flow rate of 0.5 sccm and the FeN film thickness of 250 ${\AA}$. Four steps are observed in the magnetoresistance curve owing to this difference of coercive force, because respective magnetic layers in the multilayer possess different coercive forces. These effects observed in these mutilayer films can be expected to application to the memory device the same MRAM as can carry out simultaneously four signals.

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Effects of Rapid Thermal Anneal on the Magnetoresistive Properties of Magnetic Tunnel Junction

  • Lee, K.I.;Lee, J.H.;K. Rhie;J.G. Ha;K.H. Shin
    • Journal of Magnetics
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    • v.6 no.4
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    • pp.126-128
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    • 2001

  • The effect of rapid thermal anneal (RTA) has been investigated on the properties of an FeMn exchange-biased magnetic tunnel junction (MTJ) using magnetoresistance and I-V measurements and transmission electron microscopy (TEM). The tunneling magnetoresistance (TMR) in an as-grown MTJ is found to be ∼27%, while the TMR in MTJs annealed by RTA increases with annealing temperature up to 300$\^{C}$, reaching ∼46%. A TEM image reveals a structural change in the interface of A1$_2$O$_3$layer for the MTJ annealed by RTA at 300$\^{C}$. The oxide barrier parameters are found to vary abruptly with annealing time within a few ten seconds. Our results demonstrate that the present RTA enhances the magnetoresistive properties of MTJs.

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Angular Modulation of the Giant Magnetoresistance at the Second Antiferromagnetic Maximum in Co/Cu Multilayered System

  • Kang, S.J.;Kim, K.Y.;Ye, W.T.;Lee, J.
    • Journal of Magnetics
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    • v.5 no.4
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    • pp.135-138
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    • 2000

  • In order to study the effect of the magnetic anisotropy on the giant magnetoresistance in a Co/Cu multilayered system, the angle dependent magnetoresistance (MR) was measured. The experimental results showed that the maximum MR ratio depends on the angle between the direction of the applied field and the easy axis. The angular modulation of the MR ratio can be explained by the alignments of the two 'effective' magnetization vectors that are bound to their own easy axes. Two maxima observed in MR loops at the second antiferromagnetic maximum are discussed in relation to the magnetic anisotropy, The simulated results under the assumption of the existence of two in-plane easy axes in the sample are compared with the experiments.

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Electron mobility and low temperature magnetoresistance effect in $Si/Si_{1-x}Ge_x$ quantum well devices ($Si/Si_{1-x}Ge_x$Quantum Well 디바이스에서의 전자이동도 및 저온 자기저항효과)

  • 김진영
    • Journal of the Korean Vacuum Society
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    • v.8 no.2
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    • pp.148-152
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    • 1999

  • the low temperature magnetoresistance effect, electron mobilities, and 2 Dimensional electron Gases (2DEG) properties were investigated in $Si/Si_{1-x}Ge_x$ quantum well devices. N-type $Si/Si_{1-x}Ge_x$ structures were fabricated by utilizing a gas source Molecular Beam Epitaxy (GSMBE). Thermal oxidation was carried out in a dry O atmosphere at $700^{\circ}C$ for 7 hours. Electron mobilities were measured by using a Hall effect and a magnetoresistant effect at low temperatures down to 0.4K. Pronounced Shubnikov-de Haas (SdH) oscillations were observed at a low temperature showing two dimensional electron gases (2DEG) in s tensile strained Si quantum well. The electron sheet density (ns) of $1.5\times10^{12}[\textrm{cm}^{-2}]$ and corresponding electron mobility of 14200 $[\textrm{cm}^2V^{-1}s^{-1}]$ were obtained at a low temperature of 0.4K from $Si/Si_{1-x}Ge_x$ structures with thermally grown oxides.

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