• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.10a
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• pp.85-85
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• 1999

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.145-145
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• 2005

• Journal of Magnetics
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• v.10 no.4
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• pp.163-170
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• 2005

The RF integrated noise filters are fabricated by photolithography. The stack for the electromagnetic noise filters consists of the nano-granular ($Co_{41}Fe_{38}AI_{13}O_8$) soft magnetic film / $SiO_2$ / Cu transmission line / seed layer (Cu/Ti) / $SiO_2$-substrate. A good signal-attenuation feature along with a low signal-reflection feature is observed in the present filters. Especially in the noise filter incorporated with a $Co_{41}Fe_{38}AI_{13}O_8$ magnetic film with lateral dimensions of $2000{\mu}m$ wide, 15 mm long and $1{\mu}m$ thick, the maximum magnitude of signal attenuation reaches -55 dB, and the magnitude of signal reflection is below -10 dB in the overall frequency range. And this level of signal attenuation is much larger than that of a noise filter incorporated with a Fe magnetic film.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.230-238
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• 2000

We present the magnetisation reversal dynamics of epitaxial Fe thin films grown on GaAs(001) and InAs(001) studied as a function of field sweep rate in the range 0.01-160 kOe/s using magneto-optic Kerr effect (MOKE). For 55 and 250 ${\AA}$ Fe/GaAs(001), we find that the hysteresis loop area A follows the scaling relation A ∝ H$\^$${\alpha}$/ with ${\alpha}$=0.03∼0.05 at low sweep rates and 0.33-0.40 at high sweep rates. For the 150 ${\AA}$ Fe/InAs(001) film, ${\alpha}$ is found to be ∼0.02 at low sweep rates and ∼0.17 at high sweep rates. The differing values of ${\alpha}$ are attributed to a change of the magnetisation reversal process with increasing sweep rate. Domain wall motion dominates the magnetisation reversal at low sweep rates, but becomes less significant with increasing sweep rate. At high sweep rates, the variation of the dynamic coercivity H$\sub$c/ is attributed to domain nucleation dominating the reversal process. The results of magnetic relaxation studies for easy-axis reversal are consistent with the sweeping of one or more walls through the entire probed region (∼100 $\mu\textrm{m}$). Domain images obtained by scanning Kerr microscopy during the easy cubic axis reversal process reveal large area domains separated by zigzag walls.

• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.243-248
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• 1997

The effect of $O_2$ partial pressure on microstructure and soft magnetic properties of as-deposited Fe-Hf-O thin film alloys, which are produced by rf magnetron sputtering method in $Ar+O_2$ mixed gas atmosphere, are investigated. Saturation magnetization ($4{\pi}M_s$) of Fe-Hf-O film were decreased with increasing $O_2$ partial pressure, the best soft magnetic properties exhibit at $O_2$ partial pressure of 10%. With further increase of $O_2$ partial pressure, soft magnetic properties decreased continuously. The $Fe_{82}Hf_{3.4}O_{14.6}$ film with $P_{O2}=10%$ exhibits good soft magnetic properties with $4{\pi}M_s=17.7kG$, $H_c=0.7Oe$ and ${\mu}_ {eff}$ (1~100 MHz)=2,500, respectively. The addition of O is effective in grain refinement. In case of $P_{O2}=15%$, it is observed that $Fe_3O_4$ compound is formed and high frequency soft magnetic properties are decrease. The electrical resistvity($\rho$) of Fe-Hf-O film is increased with increasing $O_2$ partial pressure. Electrical resistivity of $Fe_{82}Hf_{3.4}O_{14.6}$ film was 5 times higher than that of the film without oxygen. Thus, it is considered that the good magnetic properties of $Fe_{82}Hf_{3.4}O_{14.6}$ film results from decreasing the $\alpha$-Fe grain size by precipitates (Hf and O), high electrical resistivity.

• Journal of the Korean Magnetics Society
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• v.18 no.5
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• pp.190-194
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• 2008

Epitaxial $L1_0$ FePd (001) thin films were successfully manufactured by sputtering deposition method. The structure and magnetic properties of FePd thin films were characterized as a function of Fe compositions. It was found that the long-range ordering parameter had a maximum for the stoichiometric composition, whereas the magnetic anisotropy had a maximum as the Fe content is decreased to slightly above the stoichiometric composition. This indicates that the stoichiometry is directly contributed to the chemical ordering and the magnetic anisotropy. These results imply that nonstoichiometric FePd compositions, with a slight excess of Pd, may in fact be preferred for applications that require high magnetic anisotropy.

• Journal of the Korean Society for Nondestructive Testing
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• v.28 no.5
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• pp.395-400
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• 2008

Alternating magnetic field was used for detection of surface flaws on nonmagnetic and magnetic metallic specimens. The nondestructive sensor probe was composed of the planar coil with inductive magnetic thin film yoke as a sensing component and a single straight typed exciting coil. The planar inductive coil sensor with magnetic yoke was fabricated by sputtering, electroplating, dry etching and photolithography process. The alternative currents with the range of 0.1A to 1.0A (0.7 MHz to 1.8 MHz) were applied to the exciting coil. The specimens were prepared with the slit shaped artificial surface flaws (minimum depth and width; 0.5 mm) on metallic plate (Al; nonmagnetic metal and FeC; magnetic metal). The detected signal for the positions and shapes of surface flaws on specimens were obtained with high sensitivity and high signal to ratio. The measured output signals by the non-contacted scanning on surface of FeC specimen with micron-sized crack were converted to the images of the flaws. And these results were compared with the optical images, respectively.

• Korean Journal of Materials Research
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• v.25 no.12
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• pp.703-707
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• 2015

In this study, we investigated the effect of annealing conditions on the ferromagnetic resonance(FMR) of yttrium iron garnet ($Y_3Fe_5O_{12}$, YIG) thin film prepared on gadolinium gallium garnet ($Gd_3Ga_5O_{12}$, GGG) substrate. The YIG thin films were grown by rf magnetron sputtering at room temperature and were annealed at various temperatures from 700 to $1000^{\circ}C$. FMR characteristics of the YIG thin films were investigated with a coplanar waveguide FMR measurement system in a frequency range from 5 to 20 GHz. X-ray diffraction(XRD) and X-ray photoelectron spectroscopy(XPS) were used to characterize the phase formation, crystal structure and composition of the YIG thin films. Field dependent magnetization curves at room temperature were obtained by using a vibrating sample magnetometer(VSM). The FMR measurements revealed that the resonance magnetic field was highly dependent on the annealing condition: the lowest FMR linewidth can be observed for the $800^{\circ}C$ annealed sample, which agrees with the VSM results. We also found that the Fe and O composition changes during the annealing process play important roles in the observed magnetic properties.

• Journal of the Korean Magnetics Society
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• v.11 no.3
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• pp.129-133
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• 2001

In this paper, we studied structural and magnetic properties of Ba-ferrite thin film deposited on Si(100) substrate with TiO$_2$ underlayer. Ba-ferrite thin films with TiO$_2$ underlayer were deposited by reactive RF/DC magnetron sputtering system at room temperature. TiO$_2$ underlayer was reactive sputtered with $O_2$. After deposition, the thin films were annealed at vatious temperatures to get the crystallized sample. Underlayer was used to prevent interdiffusion from Ba-ferrite thin film to substrate. The growth of Ba-ferrite thin films was influenced by TiO$_2$ underlayer. Easy magnetization direction is in-plane. From these results the Ba-ferrite film with TiO$_2$ underlayer can be used as longitudinal recording media.

• Journal of the Korean Magnetics Society
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• v.11 no.3
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• pp.122-128
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• 2001

In this paper, we studied structural and magnetic properties of Ba-ferrite thin film deposited on Si(100) substrate with various underlayers. Ba-ferrite thin films with various underlayers were deposited by reactive RF/DC magnetron sputtering system at room temperature. various underlayers was reactive sputtered with O$_2$. After deposition, the thin films were annealed at 850 $^{\circ}C$ to get the crystallized sample. Underlayers were used to prevent interdiffusion from Ba-ferrite thin film to substrate. The growth of Ba-ferrite thin films was influenced by underlayers. Easy magnetization direction is in-plane. From these results the Ba-ferrite film with various underlayers can be used as longitudinal recording media.